• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.3
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• pp.477-484
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• 2021

The 4kW class inverter for portable ESS designed through this study achieves lightweight and high power density by reducing the volume of passive devices (capacitors, inductors, etc.) suitable for portable use, and minimizes heat loss of the MOSFET through the low on resistance of the MOSFET. So that high efficiency can be achieved. In addition, in order to deliver high quality energy, it is designed to have a low THDV in accordance with the current KEPCO business handling guidelines, and is designed to output a sine wave with low distortion.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.10
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• pp.1973-1981
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• 1994

A PLDRO(Phase Locked Dielectric Resonator Oscillator) in Ku-band(10.95-11.70GHz) is designed with the concept of the feedback property of PLL(Phase Locked Loop). A series feedback type DRO is developed, and VCDRO(Voltage Controlled Dielectric Resonator Oscillator) using a varactor diode as a voltage-variable capacitor is implemented to tune oscillating frequency electrically. Then, PLDRO is designed by using a SPD(Sampling Phase Detector). This PLDRO is phase-locked voltage controlled DRO to reference source(VHF band) by SPD at 10.00 GHz for European FSS(Fixed Satellite Service). The PLDRO generates output power greater than 10dBm at 10.00 GHz and has phase noise of -80 dBc/Hz at 10 KHz offset from carrier. This PLDRO achieves much better frequency stability than conventional VCDRO.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.3
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• pp.343-354
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• 2012

In this paper, various spiral zeroth-order resonators are proposed for wireless power transmission. Since a zerothorder resonance(ZOR) mode of meta-material transmission lines has the characteristic of an infinite wavelength, its frequency is independent of physical length. Also, to obtain high transmission efficiencies high-Q resonators and strong coupling coefficient between coupled resonators are required. Therefore, the resonators consist of spiral inductor and lumped capacitor to use the ZOR mode and they are optimized via parametric study and circuit analysis for a high-Q resonator design. The optimized resonators are simulated and compared with a conventional spiral resonator and one of them was fabricated and measured. The fabricated one has a dimension of $20cm{\times}20cm{\times}8cm$($0.009{\lambda}_0{\times}0.009_{\lambda}_0{\times}0.004{\lambda}_0$) and the transmission efficiency of 80 % is measured at 13.56 MHz at transmitted distance of 40 cm.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.339-339
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• 2012

지난 몇 년 동안, 투명 비정질 산화물 반도체는 유기 발광 다이오드, 플렉서블 전자 소자, 솔라 셀, 바이오 센서 등 많은 응용분야에 연구되고 있다. 투명 비정질 산화물 반도체 그룹들 중, 특히 비정질 IGZO 박막 트랜지스터는 비정질 상태임에도 불구하고 높은 이동도와 낮은 동작 전압으로 훌륭한 소자 특성을 보인다. 이러한 고성능의 IGZO 박막 트랜지스터는 RF 마그네트론 스퍼터링이나 pulsed laser deposition과 같은 고진공 장비를 이용하여 이미 여러 그룹에서 제작되고 발표되었다. 하지만 진공 증착 시스템은 제조 비용의 절감이나 디스플레이 패널의 대면적화에 큰 걸림돌이 되고 있고, 이러한 문제점을 극복하기 위해서 용액 공정은 하나의 해결책이 될 수 있다. 용액 공정의 가장 큰 장점으로는 저온 공정이 가능하기 때문에 글라스나 플라스틱 기판에서 대면적으로 제작할 수 있고 진공 장비가 필요없기 때문에 제조 비용을 획기적으로 절감시킬 수 있다. 본 연구에서는 high-k 게이트 절연막과 IGZO 채널 층을 용액 공정을 이용하여 박막 트랜지스터를 제작하고 그에 따른 전기적 특성을 분석하였다. IGZO의 몰 비율은 In, Ga, Zn 순으로 각각 0.2 mol, 0.1 mol, 0.1 mol로 제작하였고, high-k 게이트 절연막으로는 Al2O3, HfO2, ZrO2을 제작하였다. 또한, 용액 공정 IGZO TFT를 제작하기 전, 용액 공정 high-k 게이트 절연막 캐패시터를 제작하여 그 특성을 분석하였다. 다양한 용액 공정 high-k 게이트 절연막 중, 용액공정 HfO2를 이용한 IGZO TFT는 228.3 [mV/dec]의 subthreshold swing, 18.5 [$cm^2/V{\cdot}s$]의 유효 전계 이동도, $4.73{\times}106$의 온/오프 비율을 보여 매우 뛰어난 전기적 특성을 확인하였다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.88-90
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• 2012

This paper describes a 10-bit 10-MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) with a rail-to-rail input range. The proposed SAR ADC consists of a capacitor digital-analog converter (DAC), a SAR logic and a comparator. To reduce the frequency of an external clock, the internal clock which is asynchronously generated by the SAR logic and the comparator is used. The time-domain comparator with a offset calibration technique is used to achieve a high resolution. To reduce the power consumption and area, a split capacitor-based differential DAC is used. The designed asynchronous SAR ADC is fabricated by using a 0.18 um CMOS process, and the active area is $420{\times}140{\mu}m^2$. It consumes the power of 0.818 mW with a 1.8 V supply and the FoM is 91.8 fJ/conversion-step.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.40 no.3
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• pp.135-144
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• 2003

This work proposes on-chip full CMOS current and voltage references for high-speed mixed-mode circuits. The proposed current reference circuit uses a digital-domain calibration method instead of a conventional analog calibration to obtain accurate current values. The proposed voltage reference employs internal reference voltage drivers to minimize the high-frequency noise from the output stages of high-speed mixed-mode circuits. The reference voltage drivers adopt low power op amps and small- sized on-chip capacitors for low power consumption and small chip area. The proposed references are designed, laid out, and fabricated in a 0.18 um n-well CMOS process and the active chip area is 250 um x 200 um. The measured results show the reference circuits have the power supply variation of 2.59 %/V and the temperature coefficient of 48 ppm/$^{\circ}C$ E.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.9
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• pp.35-43
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• 2002

In this paper, microstrip ring with a narrow gap is characterized and used as a tunable microwave bandgap (MBG) structure. The center frequency of MBG is mainly determined by the mean circumference of the ring and coincides with odd mode resonance frequency of the ring resonator. The stop band formation by the proposed microstip MBG ring is due to the reflection of electromagnetic waves at the narrow gap introduced in the ring, and the reactive component mounted on the gap makes the stop band vary according to its value. The mounting of capacitor (inductor) is observed to decrease (increase) the center frequency of the stop band. The varactor-mounted microstrip MBG ring is expected to be useful in microwave switches and microwave amplifier circuits.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.11
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• pp.66-70
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• 2016

This paper presents an 24 GHz I/Q LO generator for a heartbeat measurement radar system. In order to improve the mismatch performance between I and Q LO signals against process variation, a 24 GHz I/Q LO generator employing a low-pass phase shifter and a high-pass phase shifter composed of inductors and capacitors is proposed. The proposed 24 GHz I/Q LO generator consists of an LO buffer, a low-pass phase shifter and a high-pass phase shifter. It was designed using a 65 nm CMOS technology and draws 8 mA from a 1 V supply voltage. The proposed 24 GHz I/Q LO generator shows a gain of 7.5 dB, a noise figure of 2.3 dB, 0.1 dB gain mismatch and $4.3^{\circ}$ phase mismatch between I and Q-path against process and temperature variations for the operating frequencies from 24.05 GHz to 24.25 GHz.

• Applied Chemistry for Engineering
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• v.27 no.4
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• pp.449-454
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• 2016

In this study, highly monodispersed porous carbon microcapsules with a hollow core were synthesized using polystyrene (PS) beads as a hard template. The surface of PS was first modified with polyvinylpyrollidone (PVP) for the easy attachment of inorganic silica sol. After coating the surface of PVP modified PS microspheres with SBA-16 sol, the carbon microcapsules with a hollow macroporous core were fabricated through reverse replication method by filling carbon sources in the mesopores of silica mold. The hollow carbons having a mesoporous shell structure and narrow particle size distribution could be obtained after the carbonization of carbon source and the dissolution of silica mold by HF solution. The mesoporous characteristics and electrochemical properties of hollow carbon microcapsules were characterized by XRD, SEM, TEM, $N_2$ adsorption/desorption analysis and cyclic voltammetry. They showed the high electric conductivity and capability for use as efficient electro-materials such as a supercapacitor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.153-153
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• 2009

We investigated the dependence of the memory margin of the Cap-less memory cell on the strain of top silicon channel layer and also compared kink effect of strained Cap-less memory cell with the conventional Cap-less memory cell. For comparison of the characteristic of the memory margin of Cap-less memory cell on the strain channel layer, Cap-less transistors were fabricated on fully depleted strained silicon-on-insulator of 0.73-% tensile strain and conventional silicon-on-insulator substrate. The thickness of channel layer was fabricated as 40 nm to obtain optimal memory margin. We obtained the enhancement of 2.12 times in the memory margin of Cap-less memory cell on strained-silicon-on-insulator substrate, compared with a conventional SOI substrate. In particular, much higher D1 current of Cap-less memory cell was observed, resulted from a higher drain conductance of 2.65 times at the kink region, induced by the 1.7 times higher electron mobility in the strain channel than the conventional Cap-less memory cell at the effective field of 0.3MV/cm. Enhancement of memory margin supports the strained Cap-less memory cell can be promising substrate structures to improve the characteristics of Cap-less memory cell.