• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.7
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• pp.799-804
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• 2011

A thermal cycling test was conducted on a chip resistor solder joint with real-time failure monitoring. In order to study the failure mechanism of the chip resistor solder joint during the test, the resistance between both ends of the resistor was monitored until the occurrence of failure. It was observed that the monitored resistance first fluctuated linearly according to the temperature change. The initial variation in the resistance occurred at the time during the cycle when there was a decrease in temperature. A more significant change in the resistance followed after a certain number of cycles, during the time when there was an increase in the temperature. In order to explain the failure patterns of the solder joint, a mechanism for the solder failure was suggested, and its validity was proved through FE simulations. Based on the explained failure mechanism, it was shown that prognostics for the solder failure can be implemented by monitoring the resistance change in a thermal cycle condition.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.40 no.3
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• pp.259-265
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• 2016

Recently, life prediction models for Pb-based and Pb-free solders used in chip resistor assemblies under thermal cycling have been introduced. The models suggest that the field lifetimes of Pb-free solders would be better than those of Pb-based solders when used for chip resistors under thermal cycling conditions, while the lifetime of the chip assemblies under accelerated test conditions show a reverse relationship. In this study, the prediction models were verified by applying the model to another research case. Finite element models were built, thermal cycling conditions were applied, and the energy densities were calculated. Finally, life prediction analysis was conducted for the cases where Pb-based and Pb-free solders were used. The prediction results were then compared with the test data of the case. It was verified that the predictions of the developed life cycle models are on the practical scale.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.185-192
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• 2012

p-n junction temperature and thermal resistance of Light Emitting Diode (LED) package are affected by the chip size due to the change of the thermal density and the external quantum efficiency considering the heat dissipation through conduction. In this study, forward voltage was measured for two different size LED chips, 24 mil and 40 mil, which consist constitute 16-chip package. p-n junction temperature and thermal resistance were determined by thermal transient analysis, which were discussed in connection with the electrical characteristics of the LED chip and the structure of the LED package.

• Proceedings of the KAIS Fall Conference
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• 2009.12a
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• pp.1014-1017
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• 2009

본 논문에서는 저항성 초광대역 마이크로웨이브 센서의 설계이론과 구현 방법에 대해 설명하고, 시뮬레이션을 통하여 설계된 센서의 특성을 분석한다. 구현을 위하여 연속적인 저항 프로파일은 이산화되었으며 칩 저항을 이용하여 이산 저항을 실장한다. 시뮬레이션을 통해 칩 저항 8개로 약 8 GHz까지 연속적인 저항 프로파일과 유사한 성능을 보인다는 것을 보인다.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.17-23
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• 2013

As a basic research to develop stretchable electronic packaging technology, CNT-Ag composite pads were formed on top of Cu/Sn chip bumps and flip-chip bonded using anisotropic conductive adhesive. Average contact resistances of the flip-chip joints were measured with respect to bonding pressure and presence of the CNT-Ag composite pads. When Cu/Sn chip bumps with CNT-Ag composite pads were flip-chip bonded to substrate Cu pads at 25MPa or 50 MPa, contact resistance was too high to measure. The specimen processed by flip-chip bonding the Cu/Sn chip bumps with CNT-Ag composite pads to the substrate Cu pads exhibited an average contact resistance of $213m{\Omega}$. On the other hand, the flip-chip specimens processed by bonding Cu/Sn chip bumps without CNT-Ag composite pads to substrate Cu pads at 25MPa, 50MPa, and 100MPa exhibited average contact resistances of $370m{\Omega}$, $372m{\Omega}$, and $112m{\Omega}$, respectively.

• Journal of IKEEE
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• v.23 no.1
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• pp.295-301
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• 2019

A heater in a portable real-time polymerase chain reaction(PCR) system is one of the important factors for controlling the PCR thermocycle precisely. Since heaters are integrated on a small-sized PCR chip for rapid heating and fabricated by semiconductor processes, the cost of producing PCR chips is high. Here, we propose to use chip resistors as an inexpensive and accurate temperature control method. The temperature distribution was simulated using one or two chip resistors on a real-time PCR chip and the PCR chip with uniform temperature distribution was fabricated. The temperature rise and fall rates were $18^{\circ}C/s$ and $3^{\circ}C/s$, respectively.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.92-93
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• 2007

X7R 고압용 적층 칩 캐패시터 제작을 위한 내환원성 유전체 조성물에서 희토류인 $Er_2O_3$을 0.6 mol% 첨가한 후 유리프릿 첨가시소결특성 및 절연저항이 향상됨을 확인 할 수 있었다. 회토류인 $Er_2O_3$을 첨가시 유전율 및 절연저항이 감소하는 경향을 보이나 $85^{\circ}C$ 영역에서 온도특성을 향상시키는 것을 확인하였으며 고압 적층 칩 캐패시터 제작시 온도 특성이 우수한 재료를 개발 할 수 있었다.

• The Magazine of the IEIE
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• v.21 no.8
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• pp.1-9
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• 1994

고정저항기의 개발에 있어서 고려해야 할 주요 특성인 저항온도계수, 잡음, 주파수특성, 전압계수 등을 고찰하였으며, 나아가서 박막저항기, 칩저항기, 다련칩저항기의 개발동향 등을 알아보았다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.63-63
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• 2001

디바이스의 크기가 0.25㎛이하로 축소됨에 따라 DRAM(Dynamic Random Access Memory) 제조업체들은 칩 크기를 줄이고 지역적인 배선으로 사용하기 위해서 기존의 텅스텐-폴리사이드 비트-선에서 텅스텐 비트-선으로 대체하고 있다. 본 논문에서는 다양한 RTP 온도와 추가 이온주입을 사용하여 낮은 저항을 갖는 텅스텐 비트-선 제조 공정에 대해 다루었다. 그 결과 텅스텐 비트선 저항에 중요한 메계변수는 RTP Anneal 온도와 BF₂ 이온 주입 도펀트임을 알 수 있었다. 이러한 텅스텐 비트-선 공정은 고밀도 칩 구현에 중요한 기술이 된다.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.155-161
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• 2018

A Si chip with the Cu/Au bumps of $100-{\mu}m$ diameter was flip-chip bonded using different anisotropic conductive adhesives (ACAs) onto the local stiffness-variant stretchable substrate consisting of polydimethylsiloxane (PDMS) and flexible printed circuit board (FPCB). The average contact resistances of the flip-chip joints processed with ACAs containing different conductive particles were evaluated and compared. The specimen, which was flip-chip bonded using the ACA with Au-coated polymer balls as conductive particles, exhibited a contact resistance of $43.2m{\Omega}$. The contact resistance of the Si chip, which was flip-chip processed with the ACA containing SnBi solder particles, was measured as $36.2m{\Omega}$, On the contrary, an electric open occurred for the sample bonded using the ACA with Ni particles, which was attributed to the formation of flip-chip joints without any entrapped Ni particles because of the least amount of Ni particles in the ACA.