• Title/Summary/Keyword: 측정전류원

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Measurement-based LEEFI Modeling and Experimental Verification for Predicting Firing Waveform of an ESAD (ESAD의 기폭 파형 예측을 위한 측정기반 LEEFI 모델링 및 검증)

  • Kang, Hyungmin;Kim, Joungho;Hwang, Sukhyun;Jung, Myung-suk;Jo, Seyoung;Son, Joongtak
    • Journal of the Korea Institute of Military Science and Technology
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    • v.22 no.1
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    • pp.20-26
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    • 2019
  • In this paper, we propose measurement based numerical resistivity model for low energy exploding foil initiator (LEEFI) of electronic safety and arming device(ESAD). A resistivity model describes a behavior of variable resistance in LEEFI by firing current. The previous resistivity model was based on high energy detonator applications as explosive bridge wire and exploding foil initiator. Therefore, to estimate the voltage, current, and burst time of LEEFI, a resistivity model suitable for LEEFI is needed. For the modeling of resistivity of LEEFI, we propose a specific action based equation which represents a behavior of LEEFI when firing current is applied. To verify the proposed model, we analyze a firing current transmission path to obtain parasitic impedance. We experimentally verify that the proposed resistivity model offers precise estimation for the behavior of variable resistance in LEEFI.

Electronic Properties of MIM Structure Organic Thin-films that Manufacture by LB method (LB법으로 제작한 MIM 구조 유기 박막의 전자특성)

  • Choi, Young-Il;Lee, Kyung-Sup;Lim, Jung-Yeol;Song, Jin-Won
    • 전자공학회논문지 IE
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    • v.43 no.4
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    • pp.99-104
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    • 2006
  • The Langmuir-Blodgett(LB) technique has attracted considerable interest in the fabrication of electrical and electronic devices. Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuir-films. MDC flowing across monolayers is analyzed using a rod-like molecular model. A linear relationship between the monolayer compression speed u and the molecular area Am. Compression speed a was about 30, 40, 50mm/min. Langmuir-Blodgett(LB)layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 9$\sim$21. Also, we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V. The I-V characteristics of the device are measured from -3 to +3[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

The Technical Solution for Various Array Methods in Resistivity Survey (전기비저항 탐사의 다양한 배열 방법에 대한 해석 기법)

  • Park, Chung-Hwa
    • The Journal of Engineering Geology
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    • v.17 no.1 s.50
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    • pp.49-55
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    • 2007
  • Various away methods are required in the electrical resistivity survey in order to find anomalous zone reliably. Array methods are classified as several groups. Among these group, a curved survey along the fixed elevation is designed to increase the mobility of men and survey equipments at the rough terrain. Another method is performed at the survey using inclined, curved, and horizontal boreholes. A survey can also be conducted in an arbitrary location by measurements of potentials for a multi sources. The complex data acquired using various away methods are represented by a correct images reconstructed from the 3D inversion. The element division is applied to the region in which the boreholes are curved and inclined because of a spatial discrepancies between the coordinate of each electrode and the nodal point in a model. The resistivity images are obtained from a good agreement for the anomalous zones in open slope and in survey using an inclined borehole.

Evaluating Proton Accelerator in Korea (양성자가속기시설의 편익분석)

  • Jeong, Kiho;Cho, Jinsam;Kim, Jeeyoung;Kim, Junyeon
    • Environmental and Resource Economics Review
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    • v.15 no.4
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    • pp.741-760
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    • 2006
  • As a part of the 21st Century Frontier Projects, Korea is building a proton linear accelerator complex. Using the discrete choice conjoint analysis method, this study evaluates the complex. Multinomial logit model is employed as an econometric model and Hicks' compensating variation is adopted as a welfare measure. The results show that an average willingness-to-pay (WTP) of a would-be user measured by the compensating variation is estimated by 1.93 million Korean won per hour for the specification of the complex being built.

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An Energy Harvesting and Profiling System for Smart Video Devices (스마트 비디오 디바이스를 위한 에너지 하비스팅 및 프로파일링 시스템)

  • Kang, Doo-sik;Kim, Jun-sik;Park, Keon-woo;Lee, Myeong-jin
    • Journal of Advanced Navigation Technology
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    • v.21 no.1
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    • pp.99-106
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    • 2017
  • In this paper, an energy harvesting and profiling system is designed for smart video devices in internet of things environments without dedicated power source. The energy harvesting module provides the harvested energy from solar panel to the smart video device. The energy profiling module measures the battery outflow current and the battery voltage of the smart video device and the consumed energy of processes, and calculate the harvested energy from the energy harvesting module to the smart video device and the total energy consumption of the smart video device. The accuracy of the harvested energy measured by the device energy profiling module is validated by comparing with the calculated energy using the regional solar radiation provided by Korea Meteorological Administration. Energy harvesting data from the designed energy harvesting and profiling system can be used to design the perpetual operation of smart video devices or Internet of Things sensors.

Growth of $Cd_{1-x}Zn_xS $ Thin films Using Hot Wall Epitaxy Method and Their Photoconductive Characteristics (HWE에 의한 $Cd_{1-x}Zn_xS $박막의 성장과 광전도 특성)

  • 홍광준;유상하
    • Korean Journal of Crystallography
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    • v.9 no.1
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    • pp.53-63
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    • 1998
  • The Cd1-xZnxS thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). the source and substrate temperature are 600℃ and 440℃, respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction (DCXD). Hall effect on the sample was measured by the van der Pauw method and the carrier density and mobility dependence of Hall characteristics on temperature was also studied. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (γ), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that the best photoconductive characteristic were observed in the Cd0.53Zn0.47S samples annealed in Cu vapor comparing with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.65 × 107, the MAPD of 338mW, and the rise and decay time of 9.7 ms and 9.3 ms, respectively.

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Development of Augmented Reality Based Electronic Circuit Education System (증강현실 기반 전자회로 교육 시스템 개발)

  • Oh, DoBong;Shim, SeungHwan;Choi, HanGo
    • KIPS Transactions on Computer and Communication Systems
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    • v.9 no.12
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    • pp.333-338
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    • 2020
  • This paper proposes an augmented reality-based electronic circuit education system as a way for electronic circuit education, which is the basis of ICT convergence technology field. It consists of a hardware module that can identify the actual circuit and a mobile educational content that can check the current flow, input, output, and measured value by applying augmented reality technology. An experiment was conducted on image recognition, which is the main performance, for the purpose of stable operation of the system, and as the experimental method the recognition rate was measured by changing the distance between the hardware module and the mobile device to a certain interval. As a result of the experiment, the recognition rate was 100 percent at a distance of 25[Cm] or higher, and it was confirmed that the recognition rate decreased by 12% at a distance below 25[Cm], which can be said to be the effect of an error that results in image loss taken due to close distance. In the future, we plan to apply the education system presented in this paper to classes, which increases the efficiency of classes and improve students' interest and understanding of the subject.

A Study on the Electrical and Physical Properties of Cement Mortar used Carbon Material Industrial by-product (탄소소재 산업부산물을 사용한 시멘트 모르타르의 전기·물리적 특성 연구)

  • Jo, Jeong-Hoon;Kim, Nam-Il;Lee, Young-Jun;Seo, Sung-Kwan;Chu, Yong-Sik
    • Resources Recycling
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    • v.30 no.6
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    • pp.19-27
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    • 2021
  • Electrically conductive mortar used in industrial carbon material byproducts was manufactured and analyzed in this study. The contents of the carbon material and mixed water were controlled, and the distance between electrodes was set to 0.42 m and 0.88 m. The carbon material was graphite with a layered structure. The carbon material was used as fine powder and aggregate substitutes according to particle size. The average particle sizes of each materials were 18.4㎛ and 546.1 ㎛ and the electrical conductivities were 62.3 S/m and 32.5 S/m, respectively. To maintain similar mortar flow in each sample, the water content was increased with increasing carbon material, and accordingly, the porosity showed an increasing trend. When electrode distance of the mortar (week 6) was 0.42 m, the voltage-current values were 342 V-1.48 A (S20) and 349 V-1.44 A (S30). For electrode distance of 0.88 m, these values were 513 V-0.98 A (S20) and 500 V-1.01 A (S30). The exothermic properties improved with increasing carbon material content and decreasing electrode distance.

Study on the Analysis of Damage Patterns of Cellular Phone Batteries According to Energy Sources (에너지원에 따른 이동전화기 배터리의 소손패턴 해석에 관한 연구)

  • Choi, Chung-Seog
    • Fire Science and Engineering
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    • v.25 no.6
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    • pp.21-26
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    • 2011
  • The purpose of this paper is to present the damage patterns of cellular phone (SCH_W830) batteries according to energy sources and have them utilized as data for the settlement of disputes between manufactures and consumers. The reliability was secured by maintaining the ambient temperature and humidity at $22{\pm}2^{\circ}C$ and 40~60 %, respectively. The voltage of the battery used for the tests was measured to be 4.18V between positive pole (+) and negative pole (-)(1), and 4.19 V between positive pole (+) and negative pole (-)(2). This study applied the Korean Industrial Standard (KS) to the flammability test of cellular phones due to a general flame applied to them and found that no damage occurred to the built-in battery even though the flame was applied to the cases of cellular phones for 30 seconds. From the results of immersing the cellular phones in the saline solution (NaCl, 0.9 %) for 180 seconds, it was found that there was a trace of carbonization and melting due to the heat caused by leaking current. It can be seen that when the cellular phones were heated for 70 seconds using a microwave oven (MWO), the areas containing the metal holder, recharging connector, antenna, etc., were melted and discolored and that other areas showed no particular problems. That is, while the external carbonization of cellular phones, built-in metals and dielectric materials, and damage and deformation of the battery terminal block, etc., occurred differently depending on the types of energy sources, the voltage showed comparatively constant characteristics. Therefore, it is thought to be possible to attribute the cause of damage to the battery by performing analysis taking into consideration comprehensively the characteristics of the flame spread pattern as well as the melting and deformation of metals.

Dielectric properties of ${Ta_2}{O_5}$ thin film capacitor with $SnO_2$ thin film underlayer ($SnO_2$ 박막을 이용한 ${Ta_2}{O_5}$박막 커패시터의유전특성)

  • Kim, Jin-Seok;Jeong, Gang-Min;Lee, Mun-Hui
    • Korean Journal of Materials Research
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    • v.4 no.7
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    • pp.759-766
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    • 1994
  • Our investigation aimed to reduce the leakage current of $Ta_2O_5$ thin film capacitor by layering SnOz thin film layer under Ta thin film, thereby supplying extra oxygen ions from the $SnO_{2}$ underlayer to enhance the stoichiometry of $Ta_2O_5$ during the oxidation of Ta thin film. Tantalum was evaporated by e-beam or sputtered on p-Si wafers with various deposition temperatures and was oxidized by dry--oxygen at the temperatures between $500^{\circ}C$ and $900^{\circ}C$. Aluminum top and bottom electrodes were formed to make Al/$Ta_2O_5$/p-Si/Al or $Al/Ta_2O_5/SnO_2$p-Si/AI MIS type capacitors. LCR meter and pico-ammeter were used to measure the dielectric constants and leakage currents of the prepared thm film capacitors. XRD, AES and ESCA were employed to confirm the crystallization of the thin f~lm and the compositions of the films. Dielectric constant of $Ta_2O_5$ thin film capacitor with $SnO_{2}$ underlayer was found to be about 200, which is about 10 times higher than that of $Ta_2O_5$ thin film capacitor without $SnO_{2}$ underlayer. In addition, higher oxidation temperatures increased the dielectric constants and reduced the leakage current. Higher deposition temperature generally gave lower leakage current. $Ta_2O_5/SnO_2$ capacitor deposited at $200^{\circ}C$ and oxidized at $800^{\circ}C$ showed significantly lower leakage current, $10^{-7}A/\textrm{cm}^2$ at $4 \times 10^{5}$V/cm, compared to the one without $SnO_{2}$ underlayer. XRD showed that $Ta_2O_5$ thin film was crystallized above $700^{\circ}C$. AES and ESCA showed that initially the $SnO_{2}$, underlayer supplied oxygen ions to oxidize the Ta layer, however, Sn also diffused into the Ta thin film layer to form a new $Ta_xSn_YO_Z$ , ternary oxide layer after all.

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