• Title/Summary/Keyword: 충전상태

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A COMPARATIVE STUDY ON RADIOPACITY OF ROOT CANAL SEALERS (근관 전색재의 방사선 불투과성에 관한 비교연구)

  • Kim, Tae-Min;Kim, Seo-Kyoung;Hwang, In-Nam;Hwang, Yun-Chan;Kang, Byung-Cheol;Yoon, Suk-Ja;Lee, Jae-Seo;Oh, Won-Mann
    • Restorative Dentistry and Endodontics
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    • v.34 no.1
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    • pp.61-68
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    • 2009
  • This study was performed to assess the radiopacity of a variety of root canal sealers according to the specification concerning root canal sealers. Ten materials including Tubli-$Seal^{TM}$. Kerr Pulp Canal $Sealer^{TM}$, AH $26^{(R)}$, AH $plus^{(R)}$, AH plus $jet^{TM}$, Ad sea $1^{TM}$. $Sealer^{TM}$, $NOGENOL^{TM}$, ZOB $seal^{TM}$, $Epiphany^{TM}$ and dentin were evaluated in this study. In the first part, densitometric reading of an each step of aluminum step wedge on occlusal film was performed at different voltage and exposure time. In the second part, ten specimens were radiographed simultaneously with an aluminum step wedges on the occlusal films under decided condition. The mean radiographic density values of the materials were transformed into radiopacity expressed equivalent thickness of aluminum (mm Al). The following results were obtained. 1. Among the various conditions, the appropriate voltage and exposure time that meet the requirement density was 60 kVp at 0.2 s 2. All of the materials had greater radiopacity than 3 mm Al requirement of ANSI/ADA specification No. 57 (2000) and ISO No. 6876 (2001) standards. 3. The radiopacity of materials increased as thickness of materials increased. 4. The mm Al value of each specimen at 1mm in thickness has a significant difference in the statistics. It suggests that root canal sealers have a sufficient radiopacity that meet the requirement.

SURFACE HARDNESS OF THE DENTAL COMPOSITE CURED BY LIGHT THAT PENETRATE TOOTH STRUCTURE ACCORDING TO THICKNESS OF TOOTH STRUCTURE, LIGHT INTENSITY AND CURING TIME (치질을 투과한 조사광에 의한 복합레진 중합시 치질의 두께, 광세기 및 조사 시간이 복합레진의 표면 경도에 미치는 영향)

  • Cho, Soo-Kyung;Kim, Dong-Jun;Hwang, Yun-Chan;Oh, Won-Mann;Hwang, In-Nam
    • Restorative Dentistry and Endodontics
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    • v.30 no.2
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    • pp.128-137
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    • 2005
  • In this study we measured the amount of light energy that was projected through the tooth material and analyzed the degree of polymerization by measuring the surface hardness of composites. For polymerization, Optilux 501 (Demetron, USA) with two types of light guide was used: a 12 mm diameter light guide with 840 nW/$cm^2$ light intensity and a 7 mm diameter turbo light guide with 1100 nW/$cm^2$. Specimens were divided into three groups according to thickness of penetrating tooth (1 mm, 2 mm, 0 mm). Each group was further divided into four subgroups according to type of light guide and curing time (20 seconds, 40 seconds). Vickers' hardness was measured by using a microhardness tester. In 0 mm and 1 mm penetrating tooth group, which were polymerized by a turbo light guide for 40 seconds, showed the highest hardness values. The specimens from 2 mm penetrating tooth group, which were polymerized for 20 seconds, demonstrated the lowest hardness regardless of the types of light guides (p < 0.05). The results of this study suggest that, when projecting tooth material over a specified thickness, the increase of polymerization will be limited even if light intensity or curing time is increased.

A STUDY OF INSERTION DEPTH OF GUTTA PERCHA CONES AFTER SHAPING BY NI-TI ROTARY FILES IN SIMULATED CANALS (레진모형 근관에서 Ni-Ti 파일로 근관성형 후 거타퍼챠콘의 근관내 삽입깊이에 대한 연구)

  • Cho, Hyun-Gu;Hwang, Yun-Chan;Hwang, In-Nam;Oh, Won-Mann
    • Restorative Dentistry and Endodontics
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    • v.32 no.6
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    • pp.550-558
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    • 2007
  • The purpose of this study was to evaluate the insertion depth of several brands of master gutta percha cones after shaping by various Ni-Ti rotary files in simulated canals. Fifty resin simulated J-shape canals were instrumented with ProFile, ProTaper and HEROShaper. Simulated canals were prepared with ProFile .04 taper #25(n=10), .06 taper #25(n=10), ProTaper F2(n=10), HEROShaper .04 taper #25(n=10) and .06 taper #25(n=10). Size #25 gutta percha cones with a .04 & .06 taper from three different brands were used: DiaDent; META; Sure-endo. The gutta percha cones were selected and inserted into the prepared simulated canals. The distance from the apex of the prepared canal to the gutta percha cone tip was measured by image analysis program. Within limited data of this study, the results were as follows 1. When the simulated root canals were prepared with HEROShaper, gutta-percha cones were closely adapted to the root canal. 2. All brands of gutta percha cones fail to go to the prepared length in canal which was instrumented with ProFile, the cones extend beyond the prepared length in canal which was prepared with ProTaper. 3. In canal which was instrumented with HEROShaper .04 taper #25, Sure-endo .04 taper master gutta percha cone was well fitted(p < 0.05). 4. In canal which was instrumented with HEROShaper .06 taper #25, META .06 taper master gutta percha cone was well fitted(p < 0.05). As a result, we concluded that the insertion depth of all brands of master gutta percha cone do not match the rotary instrument, even though it was prepared by crown-down technique, as recommended by the manufacturer. Therefore, the master cone should be carefully selected to match the depth of the prepared canal for adequate obturation.

Electrochemical Characteristics of Cu3Si as Negative Electrode for Lithium Secondary Batteries at Elevated Temperatures (리튬 이차전지 음극용 Cu3Si의 고온에서의 전기화학적 특성)

  • Kwon, Ji-Y.;Ryu, Ji-Heon;Kim, Jun-Ho;Chae, Oh-B.;Oh, Seung-M.
    • Journal of the Korean Electrochemical Society
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    • v.13 no.2
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    • pp.116-122
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    • 2010
  • A $Cu_3Si$ film electrode is obtained by Si deposition on a Cu foil using DC magnetron sputtering, which is followed by annealing at $800^{\circ}C$ for 10 h. The Si component in $Cu_3Si$ is inactive for lithiation at ambient temperature. The linear sweep thermammetry (LSTA) and galvano-static charge/discharge cycling, however, consistently illustrate that $Cu_3Si$ becomes active for the conversion-type lithiation reaction at elevated temperatures (> $85^{\circ}C$). The $Cu_3Si$ electrode that is short-circuited with Li metal for one week is converted to a mixture of $Li_{21}Si_5$ and metallic Cu, implying that the Li-Si alloy phase generated at 0.0 V (vs. Li/$Li^+$) at the quasi-equilibrium condition is the most Li-rich $Li_{21}Si_5$. However, the lithiation is not extended to this phase in the constant-current charging (transient or dynamic condition). Upon de-lithiation, the metallic Cu and Si react to be restored back to $Cu_3Si$. The $Cu_3Si$ electrode shows a better cycle performance than an amorphous Si electrode at $120^{\circ}C$, which can be ascribed to the favorable roles provided by the Cu component in $Cu_3Si$. The inactive element (Cu) plays as a buffer against the volume change of Si component, which can minimize the electrode failure by suppressing the detachment of Si from the Cu substrate.

Influence of additional etching on shear bond strength of self-etching adhesive system to enamel (부가적인 산부식이 자가산부식 접착제의 법랑질에 대한 전단결합강도에 미치는 영향)

  • Yoo Sun-Jin;Kim Young-Kyung;Park Jeong-Won;Jin Myoung-Uk;Kim Sung-Kyo
    • Restorative Dentistry and Endodontics
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    • v.31 no.4
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    • pp.263-268
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    • 2006
  • Recently, self-etching adhesive system has been introduced to simplify the clinical bonding proce- dures. It is less acidic compared to the phosphoric acid, thus there is doubt whether this system has enough bond strength to enamel. The purpose of this study was to investigate the influence of additional etching on the adhesion of resin composite to enamel. Ninety extracted bovine permanent anterior teeth were used. The labial surfaces of the crown were ground with 600-grit abrasive paper under wet condition. The teeth were randomly divided into six groups of 15 teeth each. Clearfil SE $Bond^{\circledR},\;Adper^{TM}$ Prompt L-Pop and Tyrian $SPE^{TM}$ were used as self-etching primers. Each self-etching primers were applied in both enamel specimens with and without additional etching. For additional etching groups, enamel surface was pretreated with 32% phosphoric acid (UNI-ETCH, Bisco, Inc., Schaumburg, IL. USA). Hybrid resin composite Clearfil AP-X, (Kuraray Co., Ltd., Osaka, Japan) was packed into the mold and light-cured for 40 seconds. Twenty-four hours after storage, the specimens were tested in shear bond strength. The data for each group were subjected to independent t - test at p < 0.01 to make comparisons among the groups. In Clearfil SE $Bond^{\circledR}$, shear bond strength of additional etching group was higher than no additional etching group (p < 0.01). In $Adper^{TM}$ Prompt L-Pop and Tyrian SPE, there were no significant difference between additional etching and non-etching groups (p > 0.01). In conclusion, self-etching adhesive system with weak acid seems to have higher bond strength to enamel with additional etching, while self-etching adhesive system with strong acid seems not.

Evaluation of the Removal Characteristics of Pollutants in Storm Runoff Depending on the Media Properties (여재 특성에 따른 강우 유출수 내 오염물질 제거특성 평가)

  • Kim, Tae-Gyun;Cho, Kang-Woo;Song, Kyung-Guen;Yoon, Min-Hyuk;Ahn, Kyu-Hong;Hong, Sung-Kwan
    • Journal of Korean Society of Environmental Engineers
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    • v.31 no.7
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    • pp.483-490
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    • 2009
  • The aims of this study were to evaluate the removal efficiency for various pollutants in urban storm runoff by a filtration device, and to determine design parameters depending on filter media properties. Appropriate selection of filter media will affect the size and life time of the filtration device. Sets of column tests were performed in order to evaluate the removal efficiency by perlite and a synthetic resin. An investigation of surface properties including CEC (cation exchange capacity) and zeta-potential suggested that the perlite had a superior adsorption capability for cationic pollutants. TCODcr and turbidity were analyzed to investigate the removal characteristic of particulate pollutant. In both columns, the particles in the collected storm runoff was almost completely capture with a small EBCT (empty bed contact time) of 2.5 minutes. Complete clogging at the EBCT of 2.5 minutes occurred after 630 minutes in the perlite column and 810 minutes in the resin column. The removal efficiency of TCODcr and turbidity at the EBCT of 2.5 minutes decreased to below 70% due to an wall effect. The removal efficiency for dissolved pollutant (SCODcr) was negligible due to the insufficient contact time for adsorption. The removal of heavy metals (Cu, Zn, Pb) was mostly ascribed to the filtration of particles containing metals, since the relationship between CEC and the removal efficiency was not apparent. The result of this study would be valuable for the application of filtration device to control of urban storm runoff.

Characteristics of Si Floating Gate Nonvolatile Memory Based on Schottky Barrier Tunneling Transistor (쇼트키 장벽 관통 트랜지스터 구조를 적용한 실리콘 나노점 부유 게이트 비휘발성 메모리 특성)

  • Son, Dae-Ho;Kim, Eun-Kyeom;Kim, Jeong-Ho;Lee, Kyung-Su;Yim, Tae-Kyung;An, Seung-Man;Won, Sung-Hwan;Sok, Jung-Hyun;Hong, Wan-Shick;Kim, Tae-You;Jang, Moon-Gyu;Park, Kyoung-Wan
    • Journal of the Korean Vacuum Society
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    • v.18 no.4
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    • pp.302-309
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    • 2009
  • We fabricated a Si nano floating gate memory with Schottky barrier tunneling transistor structure. The device was consisted of Schottky barriers of Er-silicide at source/drain and Si nanoclusters in the gate stack formed by LPCVD-digital gas feeding method. Transistor operations due to the Schottky barrier tunneling were observed under small gate bias < 2V. The nonvolatile memory properties were investigated by measuring the threshold voltage shift along the gate bias voltage and time. We obtained the 10/50 mseconds for write/erase times and the memory window of $\sim5V$ under ${\pm}20\;V$ write/erase voltages. However, the memory window decreased to 0.4V after 104seconds, which was attributed to the Er-related defects in the tunneling oxide layer. Good write/erase endurance was maintained until $10^3$ write/erase times. However, the threshold voltages moved upward, and the memory window became small after more write/erase operations. Defects in the LPCVD control oxide were discussed for the endurance results. The experimental results point to the possibility of a Si nano floating gate memory with Schottky barrier tunneling transistor structure for Si nanoscale nonvolatile memory device.