• Applied Chemistry for Engineering
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• v.8 no.3
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• pp.482-488
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• 1997

Copper recovery from waste water of electronic industry has been conducted effectively in a fluidized bed reactor. Initial concentration of copper in the waste water, liquid flow rate in the reactor, reaction temperature and time and current density between the cathode and anode in the reactor have been selected as operating variables. The effects of operating variables on the recovery of copper have been studied. It has found that the copper resolved in the waste water can be recovered continuously by means of a fluidized bed reactor The recovery of copper decreased with an increase in the initial concentration of copper in the waste water, while it increased with increasing reaction time and current density, however, it exhibited its maximum value with the variations of liquid flow rate and reaction temperature. The optimum reaction condition to maintain the copper recovery around 85% is as follows ; $X_o=3wt%$, $U_L=0.5cm/s$, $T=25^{\circ}C$, $I=7A/dm^2$ and t=2hrs within this experimental condition.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.30-30
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• 2009

GTA 용접에서 용입, 용접부의 크기와 형상이 형성되는 아크 물리학적 현상을 이해함에 있어서 에너지 분포특성은 매우 중요한 인자이다. GTA 용접에서 아크 길이의 변화와 사용된 실드 가스 종류에 따라 음극인 텅스텐 전극 팁의 아크 루트 직경에 큰 변화를 주며, 양극인 모재 쪽의 에너지 분포에 영향을 미치며 된다. 기존의 연구자들은 저전류나 중전류 영역의 GTA 용접에서 텅스텐 전극의 선단각과 용입 형태와 의 관계를 plasma 기류 등에 의해 고찰하거나, 최대 아크압력에 미치는 전극형상의 영향에 대하여 연구하였다. 용접부에 작용하는 아크 압력의 분포는 결국 운동 에너지의 분포이다. 기존의 연구자들에 비하여 보다 간편한 실험을 통하여 양극 모재위의 아크 압력에 의한 에너지 분포특성을 규명하는 연구가 필요하다. 본 연구의 목적은 GTA 용접의 용접전류 100A~200A 영역에서 아크 길이 변화와 Ar 가스에 $H_2$ 혼합에 따른 측정된 아크 압력으로부터 기존연구자들의 아크 물리학적 결과들을 활용하여 양극 모재 위에 작용하는 전류밀도 분포를 유도하는 것이다. GTA 용접에서 아크 길이의 변화와 Ar 가스에 $H_2$ 혼합은 아크 압력분포에 큰 영향을 미치며, 이에 따라 에너지 분포특성에 많은 영향을 미친다. 아크 길이가 증가함에 따라 Ar가스와 $H_2$ 혼합가스의 에너지 분포는 감소하였고, Ar가스에 $H_2$ 혼합에 의해 아크 에너지가 증가하여 용입형상에 큰 영향을 미칠 것으로 판단된다. 이에 대한 연구는 향후 GTA 용접 응용분야 확대 적용될 것이며, 아크 물리학 연구에 기초적이고 아주 중요한 과학적인 자료가 될 것으로 판단된다.

• Journal of Korean Society of Environmental Engineers
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• v.39 no.10
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• pp.591-598
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• 2017

Power overshoot phenomenon was observed in microbial fuel cells (MFCs) used non-catalyzed graphite felt as cathode. Voltage loss in MFCs was mainly caused by cathode potential loss. Cheap stainless steel scrubber, which has high conductivity, and Pt/C coated graphite felt as cathode were used for overcoming power overshoot and reducing the cathode potential loss in MFCs. The MFCs used stainless steel scrubber showed no power overshoot even slow catholyte flow rate and produced 29% enhanced maximum current density ($23.9A/m^3$) than MFCs used non-catalyzed graphite felt while the power overshoot phenomenon was existed in Pt/C coated MFCs. Increasing catholyte flow rate resulted in disappearing power overshoot of MFCs used non-catalyzed graphite felt. In addition, maximum power density and current density of both MFCs used non-catalyzed graphite felt and stainless steel scrubber increased by 2-3.5 times. Cathode potential losses in all region of activation loss, ohmic loss, and mass transport loss were reduced according to increase of catholyte flow rate. Therefore, stainless steel scrubber has advantages that are economical materials as electrode and prevents power overshoot, leading to enhance electricity generation. In addition, increasing catholyte flux is one of great solution when power overshoot caused by cathodic overpotential is observed in MFCs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.9
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• pp.25-30
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• 2004

In this Paper, the 0.1 w InGaAs/InAlAs/GaAs Metamorphic HEMT, which is applicable to MIMIC, and a 100 GHz MIMIC amplifier were designed and fabricated. The DC characteristics of MHEMT are 640 mA/mm of drain current density, 653 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 173 GHz and the maximum oscillation frequency(fmax) is 271 GHz. A 100 GHz amplifier was designed using 0.1${\mu}{\textrm}{m}$ MHEMT and CPW technology. The measured results from the 100 GHz MIMIC amplifiers show good S21 gain of 10.1 dB and 12.74 dB at 100 GHz and 97.8 GHz, respectively.

• Journal of the Korean Electrochemical Society
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• v.3 no.1
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• pp.1-4
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• 2000

The Bis(8-oxyquinolino) zinc lII (Znq2) were synthesized successfully from zinc chloride $(ZnCl_2)$ as a initial material . The organic electroluminescece devices (ELDs) were fabricated with N-N'-diphenyl-N-N'-bis (3-meth-ylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) which act as a hole transporting layer and the Znq2 act as an EL emitting layer and electron transporting layer. In order to maximize luminance of ELD, TPD/Znq2/Al were deposited onto cleaned indium tin oxide (ITO) by changing thickness of EL emitting layer. The photoluminescence (PL) results show that Znq2 compound emits yellow green from 540nm. electrochemical behavior with V-J and V-L curve of carrier injection was investigated from 6 V. respectively. The maximum luminance were defected about $838 cd/m^2$. From these results, ai synthesized Znq2 material maybe one of the useful material of organic EL display material.

• Korean Journal of Materials Research
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• v.3 no.4
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• pp.327-335
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• 1993

Using a RF cylindrical magnetron operated with two electromagnets having a Helmholz configuration, RF magnetron plasma properties and characteristics of reactive ion ething of Si were investigated as a function of applied magnetic field strengths using 3mTorr $CF_4/H_2$ and $CHF_3$. Also, I-V characteristics of Schottky diodes, which were made of silicons etched under different applied magnetic field strengths and gas environments, were measured to investigate the degree of radiation damage during the reactive ion etching. As the magnetic field strent;th increased, ion densities and radical densities of the plasmas were increased linearly, however, the dc self-bias voltages induced on the powered electrode, where the specimen are located, were decreased exponentially. Maximum etch rates, which were 5 times faster than that etched without applied magnetic filed, were obtained using near lOOGauss, and, under these conditions, little or no radiation damages on the etched silicons were found.

• Journal of Advanced Marine Engineering and Technology
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• v.35 no.5
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• pp.590-599
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• 2011

The electrification of the waste heat of fuel cell is necessary to enhance the efficiency of fuel cell system. For this purpose, the SOFC/ST(Solid oxide fuel cell/Steam turbine) hybrid system is suitable. The purpose of this work is to predict the performance of methane fueled SOFC/ST hybrid power system and to analyze the influence of operating temperature of stack, current density of stack, combustor outlet gas temperature, and boiler outlet gas temperature. According to the analysis, it is proved that making the best use of the waste heat of stack and minimizing the fuel consumption of combustor are essential for the high-efficiency of SOFC/ST hybrid system.

• Journal of the Korean Electrochemical Society
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• v.11 no.4
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• pp.297-303
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• 2008

$LiNiO_2$ cathode powders with fine size have been synthesized by spray pyrolysis from the spray solution with citric acid and ethylene glycol. The as-prepared powders with spherical shape, porous structure and micron size turned into $LiNiO_2$ powders with micron size and regular morphology after post-treatment at $800^{\circ}C$. The initial discharge capacities of the $LiNiO_2$ powders changed from 199 to 171mAh/g when the concentrations of the citric acid and ethylene glycol added to the spray solutions were changed from 0 to 1 M. The maximum initial discharge capacity of the $LiNiO_2$ powders obtained from the spray solution with citric acid and ethylene glycol was 198 mAh/g when the lithium component added to the spray solution was 6 mol% excess of the stoichiometric amount. The discharge capacities of the fine-sized $LiNiO_2$ powders dropped from 198 to 163 mAh/g by the 30 th cycle at a current density of 0.1 C.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.2
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• pp.128-135
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• 2013

This letter presents the MISHFET with si-doped AlGaN/GaN heterostructure for power amplifier. The device grown on 6H-SiC(0001) substrate with a gate length of 180 nm has been fabricated. The fabricated device exhibited maximum drain current density of 837 mA/mm and peak transconductance of 177 mS/mm. A unity current gain cutoff frequency was 45.6 GHz and maximum frequency of oscillation was 46.5 GHz. The reported output power density was 1.54 W/mm and A PAE(Power Added Efficiency) was 40.24 % at 9.3 GHz.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.157-157
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• 2011

박막형태로 제작이 가능한 비정질 실리콘은 결정질 실리콘에 비하여 AM-1 (Air Mass 1:100mW/cm2)조건하에서 10-3 S/cm 정도의 높은 광전기전도도와 가시광선 영역($4000{\sim}7000{\AA}$)에서 약 10배의 높은 광흡수계수를 가지며, $300^{\circ}C$ 이하의 낮은 기판온도에서 다양한 기판위에 대면적으로 제작이 가능할 뿐만 아니라 제작공정이 단순하여 제작비용이 저렴하다는 이점이 있다. 본 실험에서 제작된 모든 박막은 PECVD로 증착하였으며 구조는 p-i-n superstrate형 구조를 사용하였고, 각 박막의 두께는 p-a-Si:H/i-a-SiGe:H/n-a-Si:H ($300{\AA}/2000{\AA}/600{\AA}$)으로 고정하였다. a-Si:H (hydrogenated amorphous silicon) 태양전지의 광 흡수층인 i-layer에서의 germane 가스 유량 변화(0, 20, 40. 60, 80, 100 sccm)에 대한 흡수율의 차이를 UV/Vis/Nir spectrophotometer (ultraviolet/visible/near infrared spectrophotometer)를 통해 확인하고, 그에 따른 a-Si:H 박막 태양전지를 제작하여 solar simulator를 사용하여 AM 1.5 G의 환경 조건에서 태양전지 특성을 평가하였다. 그 결과 germane 가스 유량이 증가함에 따라 파장에 대한 absorptance (a.u.)값이 증가함을 알 수 있었으며, 흡수되는 파장영역의 범위가 장파장으로 확대됨을 확인할 수 있었다. 또한 germane 가스 유량이 60 sccm 일때 a-SiGe:H 박막 태양전지 변환효율이 3.80%로 최대값을 가졌다. 실험에서 germane 가스 유량이 증가할수록 흡수율이 높아져 태양전지특성이 향상될 거라 예상 했지만, 100 sccm보다 60 sccm일 때가 단락전류밀도 값과 변환효율이 높다는 것을 확인할 수 있었다. 이는 각 layer사이에 계면상의 문제가 있을 거라 예상되며 직렬저항측정을 통해 확인할 수 있다.