Fabrication and characterization of the 0.25 ${\mu}m$ T-shaped gate P-HEMT and its application for MMIC low noise amplifier
(0.25 ${\mu}m$ T형 게이트 P-HEMT 제작 및 특성 평가와 MMIC 저잡음 증폭기에 응용)
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- Journal of the Korean Institute of Telematics and Electronics D
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- 제36D권1호
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- pp.38-46
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- 1999