• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.07a
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• pp.157-160
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• 2001

APF optical link용 receiver를 하나의 바이폴라 칩으로 실현하기 위하여 수신파장 영역에서 고속.고감도 특성을 갖는 바이폴라 집적용 Si photodiode를 에피 두게 6$\mu\textrm{m}$(epi06)와 12$\mu\textrm{m}$(epi12)로 제작하고 이의 전기.광학적 특성을 조사하였다. 제작된 소자의 전기.광학적 특성을 -5 V의 동작전압에서 측정한 결과, 6 $\mu\textrm{m}$ 에피두께의 경우 접합커패시턴스와 암전류가 각각 4.8 pF와 2.6 pA로 나타났으며, 광신호 전류와 감도특성은 670 nm의 중심파장을 갖는 3.15 ㎼의 입사광 전력 아래에서 각각 0.568 $\mu\textrm{A}$와 0.18 A/W로 나타났다. 에피층의 두께가 12 $\mu\textrm{m}$의 경우 접합커패시턴스와 암전류는 각각 9.8 pF와 171.3 pA로 나타났으며, 광신호 전류와 감도특성은 3.679$\mu\textrm{A}$와 1.17 A/W로 나타났다. 제작된 두 소자는 적색 파장(λ$_{p}$=670nm)부근에서 최대 spectral response(λ$_{p}$=600nm at epi06, λ$_{p}$=700nm at epi12)를 보이고 있다.이고 있다.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.10 no.5
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• pp.153-160
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• 2010

We optimized the Si(substrate)/$SiO_2$(cladding)/$Si_3N_4$(antiresonant cladding)/$SiO_2$(core)/air multi-layers rib-optical waveguides of antiresonant reflecting optical waveguide (ARROW) for integrated optical biosensor structure utilizing beam propagation method (BPM). Thickness of anti-resonant cladding was derived to minimize the propagation loss and leaky field mode deeply related with evanescent mode was theoretically derived. Depth, width, refractive index and cladding thickness of anti-resonant cladding were numerically calculated into 2.3${\mu}m$, 5${\mu}m$, 1.488, and 0.11${\mu}m$ respectively to minimize propagation loss using the BPM simulation tool. Finally one- and two-dimensional propagation characteristics of ARROW was confirmed.

• Journal of IKEEE
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• v.24 no.2
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• pp.409-418
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• 2020

In this paper, an integrated optical, evanescent-wave biosensor utilizing a multimode interferometer based on a Si₃N₄ rib-optical waveguide consisting of the Si/SiO₂/Si₃N₄/SiO₂ stacked structure was described. The theoretical background of the multimode interferometer was reviewed, and the structure and design process were presented through numerical computational analysis. We analyzed how the dimension (length, width) of the multimode interferometer affected the sensor performance. It has been confirmed through computational analysis that the changes in the refractive index of an analyte greatly affect the mode pattern formation position and output optical power of a multimode interferometer, and proved that this principle could be applied to integrated-optic biosensor.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.4
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• pp.659-664
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• 2020

In this paper, we propose a silicon-based electro-optic (EO) modulator which can modulate a sign of a topological charge number l of |l|=1 orbital angular momentum (OAM) mode. The proposed EO modulator consists of position-dependent doped Si waveguide core and undoped SiO2, cladding, which enables control of the effective index and propagation loss of two OAM constitutive eigenmodes. The modulator functions as OAM mode maintaining waveguide at -0.33V and as topological charge sign inverter at 10V. The output OAM mode purity is calculated through electric field distribution, showing high purity of |l|>0.92 in both cases.

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.509-514
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• 2003

Mach-Zehnder interferometric wavelength converters with monolithically integrated semiconductor optical amplifiers (SOA's) have been fabricated and characteristics of wavelength conversion at 10 Gb/s have been investigated for wavelength span of 40 nm. The devices have been achieved by using a butt-joint combination of buried ridge structure type SOA's and passive waveguides. In the integration, a new method has been applied that removes p+InP cladding layer leading to high propagation loss and forms simultaneously the current blocking and the cladding layer using undoped InP. The module packaging has been achieved by using a titled fiber array for effective coupling into the tilted waveguide in the wavelength converter. Using the module, wavelength conversion with power penalty lower than 1 ㏈ at 10 Gb/s has been demonstrated for wavelength span of 40 nm. In addition, it is show that the module can provide 2R (re-amplification, re-shaping) operation by demonstrating the conversion with the negative penalty.

• Korean Journal of Optics and Photonics
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• v.18 no.1
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• pp.50-55
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• 2007

Using the Selective Area Growth (SAG) technology of Metal Organic Chemical Vapor Deposition (MOCVD), we successfully integrated an active device and passive devices on the same substrate. In other words, we integrated a Semiconductor Optical Amplifier (SOA) as an active device and an S-bend waveguide and a Multi Mode Interference (MMI) waveguide as passive devices. The SOA is successfully integrated with passive devices on the same substrate. The Cross-Gain Modulation (XGM) characteristic of the integrated SOA and the loss of an MMI and an S-bend waveguide were measured. Measured XGM characteristics of the SOA showed an extinction ratio of 8.82 dB. The total loss of the MMI and S-bend waveguide was 18 dB.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.2
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• pp.337-343
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• 2007

Since three-dimensional (3D) images reconstructed in interval imaging technique are related to the resolution of elemental images, there has been a problem that ray information of elemental images increases largely in order to obtain high-resolution 3D images. In this paper, to overcome this problem, a new unidirectional integral imaging based on pinhole model is proposed. Proposed method provides a new type of unidirectional elemental images, which are simply obtained by magnifying single horizontal pixel line of each elemental image to the vertical size of lenslet using ray analysis based on pinhole model and used to display 3D images. In proposed method, reduction effect of the ray information of elemental images can be obtained by scarifying vortical parallax. Feasibility of the proposed scheme is experimentally demonstrated and its results are presented.

• Korean Journal of Optics and Photonics
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• v.19 no.6
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• pp.394-399
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• 2008

An integral imaging system enabling enhanced depth of field by incorporating a pair of liquid-crystal (LC) lens arrays was proposed and demonstrated. The lens arrays exhibit two different refractive indexes depending on the light polarization. The proposed LC lens array I and II were implemented by depositing a ZLI-4119 LC and an E-7 LC, respectively, on top of a lens-array substrate in glass. When the two LC lens arrays were aligned appropriately, a birefringence was obtained for a specific light polarization in such a way that the incoming light sees different refractive indexes for them. As a result, the focal length associated with the imaging system utilizing the LC lens arrays was adaptively varied, thereby enhancing the depth of field for the image reconstruction. We have theoretically analyzed the proposed integral imaging system with the $LightTools^{(R)}$ to confirm that the focal length could be adjusted with the help of the birefringent lens array. Finally the proposed imaging system successfully reconstructed the objects. The birefringent lens array employing the ZLI-4119 LC produced a real image with the focal length of 680 mm, while the other using the E-7 LC yielded a virtual image with the focal length of -29 mm.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.22-23
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• 2000

GaAs/AlGaAs나 InGaAs/InGaAsP와 같은 반도체 기판을 이용한 전계광학 광변조기는 LD나 SOA와 같은 광소자와 단일기판 집적이 가능하고 낮은 chirping과 높은 변조대역폭을 갖는 외부광변조기로서의 장점으로 인하여 마이크로파 대역의 초고속광통신소자로 각광을 받아왔다. 특히 진행파의 속도가 정합된 traveling-wave 전극 구조를 갖는 경우 변조대역폭은 30-400Hz에 달하고 있다$^{(1)}$ . 그러나 한편으로는 반도체의 전계광학계수(electro-Optic Coefficient)가 LiNbO$_3$에 비해 10분의 1정도로 작아 상대적으로 동작전압이 커지는 단점이 대두되며 실제 구동전압이 수십 V에 이르고 있다. 이런 단점을 극복하기 위하여 p-i-n 구조를 이용하여 전계 집속도를 높이는 방법이 제안되어 동작전압이 2 V/mm 정도까지 감소하였다$^{(2)}$ . 본 논문에서는 이와 같은 반도체 전계광학 광변조기에서의 소신호 및 대신호 광변조특성을 분석함으로써 보다 높은 변조대역폭과 보다 낮은 동작전압을 갖는 구조를 연구하였다. (중략)

• Korean Journal of Optics and Photonics
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• v.26 no.5
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• pp.269-274
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• 2015

In this paper we design the optical system for an integrated two-channel TO-type optical transmitter to apply the HDMI interface using the code V simulator. The proposed integrated two-channel optical transmitter has two VCSELs attached in parallel on an 8-pin TO-CAN package, on top of which is a lens filter block ($1mm{\times}2mm{\times}4mm$) composed of hemispherical lenses and WDM filters. Considering two-channel transmitters manufactured with wavelength combinations of 1060nm/1270nm and 1330nm/1550nm, we obtain the optimum value of the diameter of the hemispherical lens as 0.6 mm for both combinations, and the distances L between the lens filter block and ball lens as 1.7 mm and 2.0 mm for the 1060nm/1270nm and 1330nm/1550nm wavelength combinations, respectively. At this time, the focal length f0 of the lens filter blocks for wavelengths of 1060, 1270, 1330, and 1550 nm are 0.351, 0.354, 0.355, and 0.359 mm, respectively, and the focal lengths F of light passing through the lens filter block and ball lens are 0.62 mm for 1060nm/1270nm and 0.60-0.66 mm for 1330nm/1550nm wavelength combinations.