• Title/Summary/Keyword: 집속이온빔 밀링

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Application and Development of Focused Ion Beams (집속 이온빔의 응용 및 개발)

  • 강승언
    • Journal of the Korean Vacuum Society
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    • v.2 no.3
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    • pp.304-313
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    • 1993
  • 집속 이온빔 기술은 고해상도의 이온빔 리토그라피, 마스크가 필요없는 이온주입, 그리고 Ion beam induced deposition 등 반도체 소자의 미세가공에 널리 이용되어 왔다. 좋은 안정도와 높은 전류밀도, 적은 에너지 퍼짐 그리고 낮은 에미턴스와 높은 선명도를 갖는 집속 이온빔 장비를 위한 액체 갈륨 이온원이 한국에서 개발 시업되었다. 이온빔의 전압이 15kV, 렌즈전압이 7kV 그리고 렌즈상단에 위치한 aperture의 직경이 0.2mm일 때, 0.1$mu extrm{m}$의 빔 직경으로 집속되는 정전 einzel렌즈가 설계 조립되었고, FIB 진공 chamber는 렌즈부와의 차 등 진공시스템으로 구성되어 설계제작되었다. FIB 장비가 조만간 한국에서 이온빔 밀링, ion beam induced deposition 그리고 잘못된 부분의 수정 등 반도체 제작공정에서의 응용에 큰 기여를 할 것이라 기대된다.

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The ocused Ion Beam Etching Characteristic of Au (집속 이온빔 가공변수에 따른 Au 에칭 특성 연구)

  • Park, J.J.;Kim, S.D.
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.16 no.5
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    • pp.129-133
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    • 2007
  • Focused Ion Beam(FIB) systems is a useful tool for the fabrication of micro-nano scale structures. In this study, the effects of FIB etching on the Au microstructure are systematically investigated. As the fabrication parameters, ion dose, dwell time and beam overlap ratio are studied. First, the increases of Ga ion dose makes the milling yield higher and the sidewall of milling profile steeper. Dwell time is found to have little effects on the milling profile due to the relatively large milling area of $1\times1{\mu}m^2$ used in this study. However, beam overlap significantly affects not only milling rate but also milling profile. As the beam overlap ratio changes from positive to negative, the development of regular cross-stripe patterns at the bottom with low milling rate is observed.

Focused Ion Beam Milling for Nanostencil Lithography (나노스텐실 제작을 위한 집속이온빔 밀링 특성)

  • Kim, Gyu-Man
    • Journal of the Korean Society for Precision Engineering
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    • v.28 no.2
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    • pp.245-250
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    • 2011
  • A high-resolution shadow mask, a nanostencil, is widely used for high resolution lithography. This high-resolution shadowmask is often fabricated by a combination of MEMS processes and focused ion beam (FIB) milling. In this study, FIB milling on 500-nm-thin SiN membrane was tested and characterized. 500 nm thick and $2{\times}2$ mm large membranes were made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. A subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to the high resolution of the FIB milling process, nanoscale apertures down to 60 nm could be made into the membrane. The nanostencil could be used for nanoscale patterning by local deposition through the apertures.

A Review of Ion Beam Technology (이온빔 기술 리뷰)

  • Lee, Tae-Ho
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2011.11a
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    • pp.493-496
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    • 2011
  • In this paper, ion beam technology was investigated mainly through the published papers. There are two different types of method application. One method is to remove the material from the substrate, the other one is deposited to the surface of the substrate or specimen. Based on the literature review there are 3-4 times more published research papers related to the deposition than those of the removal.

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A Review of Ion Beam Technology (이온빔 기술 리뷰)

  • Lee, Tae-Ho
    • Journal of the Korea Institute of Military Science and Technology
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    • v.14 no.6
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    • pp.1107-1113
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    • 2011
  • In this paper, ion beam technology was investigated through the published papers. Ion beam technology is mainly used by the focused ion beams. There are two different types of application methods. One method is to remove the material from the substrate, the other one is to deposit the materials on the surface of the substrate or specimen. Based on the literature review there are 1.5 times more published research papers related to the deposition than those of the removal.

Silicon Nano Patterning Using Focused ion Beam: Simulation and Fabrication (집속이온빔을 이용한 실리콘 나노 패터닝: 시뮬레이션과 가공)

  • Han J.;Min B.K.;Lee S.J.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2006.05a
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    • pp.489-490
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    • 2006
  • To establish fabrication techniques for nano structure understanding of focused ion beam (FIB) milling process is required. In this study the mathematical model containing the factors related to FIB milling is developed to acquire the optimal fabrication condition. Then, the model is verified by comparison with various nano pattern fabricated in actual FIB system. Consequently, it is demonstrated that the nano patterns with the smallest pitch can be fabricated using developed FIB milling model.

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'AMADEUS' Software for ion Beam Nano Patterning and Characteristics of Nano Fabrication ('아마데우스' 이온빔 나노 패터닝 소프트웨어와 나노 가공 특성)

  • Kim H.B.;Hobler G.;Lugstein A.;Bertagonolli E.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.10a
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    • pp.322-325
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    • 2005
  • The shrinking critical dimensions of modern technology place a heavy requirement on optimizing feature shapes at the micro- and nano scale. In addition, the use of ion beams in the nano-scale world is greatly increased by technology development. Especially, Focused ion Beam (FIB) has a great potential to fabricate the device in nano-scale. Nevertheless, FIB has several limitations, surface swelling in low ion dose regime, precipitation of incident ions, and the re-deposition effect due to the sputtered atoms. In recent years, many approaches and research results show that the re-deposition effect is the most outstanding effect to overcome or reduce in fabrication of micro and nano devices. A 2D string based simulation software AMADEUS-2D $(\underline{A}dvanced\;\underline{M}odeling\;and\;\underline{D}esign\;\underline{E}nvironment\;for\;\underline{S}putter\;Processes)$ for ion milling and FIB direct fabrication has been developed. It is capable of simulating ion beam sputtering and re-deposition. In this paper, the 2D FIB simulation is demonstrated and the characteristics of ion beam induced direct fabrication is analyzed according to various parameters. Several examples, single pixel, multi scan box region, and re-deposited sidewall formation, are given.

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