• Korean Journal of Materials Research
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• v.23 no.7
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• pp.399-403
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• 2013

The purpose of this study is to investigate the coloration characteristics by identifying the factor affecting red coloration of copper red glaze in traditional Korean ceramics. This study analyzed the characteristics of the reduction-fired copper red glaze by using XRD, Raman spectroscopy, EDX and UV-vis spectroscopy. As a result of XRD analysis, the glaze completely melted and amorphous glass appeared overall, and the characteristic peak of metal Cu was shown together. In addition, as a result of Raman analysis, the characteristic bands of CuO and $Cu_2O$ were shown together. The distribution of component elements was observed by EDX. As a result, copper(Cu) were distributed throughout the glaze. Thus, it was shown that copper red glaze appeared the best red coloration because metal Cu, CuO and $Cu_2O$ evenly existed throughout glaze in particle colloidal state. The chroma value of the copper red glaze was CIE $L^*$ 30.07, $a^*$ 13.65, $b^*$ 3.72. Wine-Red Solution was shown by Dark Graish Red coloration.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.518-522
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• 2013

This study investigatesthe coloration mechanism by identifying the factor that affects thered coloration of copper red glazesin traditional Korean ceramics. The characteristics of the reduction-fired copper red glaze's sections are analyzed using an optical microscope, Raman spectroscopy, scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). The sections observed using an optical microscope are divided into domains of surface, red-bubble, and red band. According to the Raman micro spectroscopy analysis results, the major characteristic peak is identified as silicate in all three domains, and the intensity of $Cu_2O$ increases toward the red band. In addition, it is confirmed that the most abundant CuO exists in the glaze bubbles. Moreover, CuO and $Cu_2O$ exist as fine particles in a dispersed state in the surface domain. Thus, Cu combined with oxygen is distributed evenly throughout the copper red glaze, and $Cu_2O$ is more concentrated toward the interface between body and glaze. It is also confirmed that CuO is concentrated around the bubbles. Therefore, it is concluded that the red coloration of the copper red glaze is revealed not only through metallic Cu but also through $Cu_2O$ and CuO.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.132-135
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• 2014

The Sr based ceramic thin films were deposited on Si substrate by RF magnetron sputtering method. And Sr based thin films were annealed at $500{\sim}700^{\circ}C$ using RTA. The surface roughness showed about 2.4 nm in annealed thin film at $600^{\circ}C$. The capacitance density of Sr based thin films were increased with the increase of annealing temperature. The maximum capacitance density of $0.6{\mu}F/cm^2$ was obtained by annealing temperature at $700^{\circ}C$. The voltage dependence of dielectric loss showed about 0.02 in voltage ranges of -10~+10 V. The leakage current density of annealing temperature of $600^{\circ}C$ was the $4.0{\times}10^{-6}\;A/cm^2$ at applied voltage of -5~+5 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04b
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• pp.8-9
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• 2008

In the procedure of the estimation, the short time breakdown characteristics for the epoxy composite specimens, which were made with the variation of hardener and/or filler, were tested firstly. Then the long time voltage-to-time test was implemented. Finally, the long time breakdown voltage of each specimen was estimated with the parameters obtained from the statistical treatment with Weibull distribution. Base on the results, it has been found that the optimal weight ratio of epoxy resin/hardener/filler that has the excellent long time breakdown characteristic was 100/100/65. It was due to the silane treatment which relieves the electric field at the interface between filler and epoxy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04b
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• pp.6-7
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• 2008

The purpose of this study was to investigate heat resistance for union type SMD inductor core. The samples was produced with process 5 step. In this study, it analysis heat resistance of SMD(Surface Mounted Device) inductor core and it get electric field only exist inside of SMD core. Therefore electric fields do not affect any device and equipments. These results are very important to design data acquisition system(several test equipments such as temperature, impedance, and current test), because data acquisition system can place under the SMD Inductor core. So, it can be decrease their test error due to electric field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.731-735
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• 2001

S $r_{0.89}$B $i_{2.4}$T $a_2$ $O_{9}$ (SBT) thin films are deposited on Pt-coated electrode(Pt/Ti $O_2$/ $SiO_2$/Si) using RF magnetron sputtering method. In the XRD pattern, the SBT thin films had (105) orientation. As annealing temperature was increased from $600^{\circ}C$ to 85$0^{\circ}C$, the intensities of peak were increased. In the SEM images, Bi-layered perovskite phase was crystallized above $650^{\circ}C$ and rod-like grains grew above 75$0^{\circ}C$. The maximum remanent polarization and the coercive electric field at annealing temperature of 75$0^{\circ}C$ are 11.60$\mu$C/$\textrm{cm}^2$ and 48kV/cm respectively. The dielectric constant and leakage current density at annealing temperature of 75$0^{\circ}C$ are 213 and 1.01x10$^{-8}$ A/$\textrm{cm}^2$, respectively. The fatigue characteristics of SBT thin filmsdid not change up to 10$^{10}$ switching cycles.s.s.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.207-213
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• 2003

The Sr$\_$0.7/Bi$\_$2.6/Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grain largely grew in oxygen annealing atmosphere. The maximum remnant polarization and the coercive electric field in oxygen annealing atmosphere are 12.40[${\mu}$C/cm$^2$] and 30[kV/cm] respectively. The dielectric constant and leakage current density of capacitors annealed oxygen atmosphere are 340 and 2.13${\times}$10$\^$-9/ [A/cm$^2$] respectively. The fatigue characteristics of SBT capacitors did not change up to 10$\^$10/ switching cycles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.41-47
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• 1998

The (Sr$_1$-\ulcorner.Ca\ulcorner)TiO$_3$(0.05 x 0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[$^{\circ}C$] in a reducing atmosphere($N_2$gas). After being fired in a reducing atmosphere, metal oxides(CuO) was painted on the both surface of the specimens to diffuse to the grain boundary. The capacitance changes slowly and almost linearly in the temperature region of -40~+85[$^{\circ}C$]. The capacitance characteristics appears a stable value within $\pm$10[%]. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 10\ulcorner[Hz]. The capacitance is almost unchanged below about 20[V] but it decrease slowly over 20[V]. The voltage-current characteristics of specimens observed in the temperature range of 25~125[$^{\circ}C$] as the current increased appears that it is due to space charge condensed to interface between grain and grain boundary.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.24-29
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• 2002

In this paper, the microstructure and the dielectric properties of Sr$\_$1-x/CaxTiO$_3$(0$\leq$x$\leq$0.2)-based grain boundary layer ceramics were investigated. The sintering temperature and time were 1420∼152 0$\^{C}$ and 4 hours in N$_2$ gas, respectively. The average grain size and the lattice constant were decreased with increasing content of Ca, but the average grain size was increased with increase of sintering temperature. The second phase foamed by the thermal diffusion of CuO from the surface leads to verb high apparent dielectric constant, $\xi$$\_$r/>50000 and low dielectric loss, tan$\delta$<0.05. X-ray diffraction patterns of Sr$\_$1-x/CaxTiO$_3$ exhibited cubic structure, and the peaks shifted upward and the peak intensity were decreased with x. This is due to the lattice contraction as Sr is replaced by Ca with a smaller ionic radius. The specimens treated thermal diffusion for 2hrs in 1150$\^{C}$ exhibited nonlinear current-voltage characteristic, and its nonlinear coefficient(a) was overt 7.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.217-220
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• 2000

The SrBi$_2$Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF sputtering method. The SBT thin films deposited on substrate at 400-500[$^{\circ}C$]. SBT thin film deposited on Pt-coated electrodes have the cubic perovskite structure and polycrystalline state. With increasing annealing temperature from 600[$^{\circ}C$] to 850[$^{\circ}C$], flourite phase was crystallized to 650[。 and Bi-layered perovskite phase was crystallize ed above 700[$^{\circ}C$]. The maximum remnant polarization and the coercive electric field is 11.73[${\mu}$C/$\textrm{cm}^2$], 85[kV/cm] respectively at annealing temperature of 750[$^{\circ}C$]. The fatigue characteristics of SBT thin films deposited on Pt/TiO$_2$/SiO$_2$/Si substrate did not change up to 10$\^$10/ switching cycles.