Electrical Properties of SBT Capacitors with various Annealing Atmosphere
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조춘남
(광운대학교 전기공학과)
김진사 (광운대학교 전기공학과) 신철기 (광운대학교 전기공학과) 최운식 (대불대학교 전기공학과) 김충혁 (광운대학교 전기공학과) 홍진웅 (광운대학교 전기공학과) 이준웅 (한국전기전자재료학회) |
1 |
Effect of<TEX>$H_2$</TEX>sintering and Pt upper electrode on metallic Bi content in <TEX>$SrBi_2Ta_2O_9$</TEX> thin films for ferroelectric memories prepared by sol - gel method
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DOI |
2 |
Phase formation and characterization of the <TEX>$SrBi_2Ta_2O_9$</TEX> layered perovskite ferroelectric
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DOI ScienceOn |
3 |
Aging behavior and recovery of polarization in <TEX>$Sr_{0.8}Bi_{2.4}Ta_2O_9$</TEX> thin films
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DOI ScienceOn |
4 |
Preparation and characterization of <TEX>$SrBi_2Ta_2O_9$</TEX> ferroelectric thin films for nonvolatile memory
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과학기술학회마을 |
5 |
Fabrication and characteristics of PZT ferroelectric thin films by sol-gel processing and rapid thermal annealing
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6 |
Electrical properties of SBT feroelectric thin films prepared by MOD
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과학기술학회마을 |
7 |
Effects of morphological changes of <TEX>$Pt/SrBi_2Ta_2O_9$</TEX> interface on the electrical properties of ferroelectric capacitor
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DOI |
8 |
Temperature dependence of the ferroeletric properties of <TEX>$SrBi_2Ta_2O_9$</TEX> thin films
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DOI ScienceOn |
9 |
Low-temperature synthesis of <TEX>$SrBi_2Ta_2O_9$</TEX> ferroelectric thin films through the complex alkoxide method: effects of functional group, hydrolysis and water vapor treatment
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DOI |
10 |
RF 스퍼터링법에 의한 SCT계 반도체 회로용 소자 제조 및 전기적 특성에 관한 연구
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