• Composites Research
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• v.21 no.2
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• pp.25-30
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• 2008

A hemispherical microbond specimen adhered onto single carbon fiber has been proposed for evaluating the interfacial shear strength between epoxy and carbon fiber. Hemispherical microbond specimens showed low interfacial shear strength data and its small standard deviation as compared with the droplet one, which seemed to be caused by the reduction of the meniscus effects and of the stress concentration in the region contacting with the tip of pin hole. In comparison with the droplet specimen the hemispherical specimen showed the shear stress distribution similar to the cylindrical one in that low stress concentration arose around the contacting region. Average interfacial shear strength obtained by the hemispherical ones represented a good correlation with the hardness of the epoxy matrix.

• Korean Journal of Materials Research
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• v.9 no.7
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• pp.747-752
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• 1999

The interfacial reaction and joint properties of Sn-3.5Ag/Cu and Sn-3.5Ag-1Zn/Cu joint were studied. Modified double lap shear solder joints of Sn-3.5Ag and Sn-3.5Ag- lZn solder were aged for 60days at $100^{\circ}C$ and $150^{\circ}C$ and then loaded to failure in shear. The Sn-3.5Ag/Cu had a fast growth rate of the reaction layer in comparison with the Sn-3.5Ag-lZn at the aging temperature of $150^{\circ}C$ Through the SEM/EDS analysis of solder joint, it was proved that intermatallic layer was $Cu_{6}Sn_5$ phase and aged specimens showed that intermatallic layer grew in proportion to $t_{1/2}$, and the precipitate of $Ag_3Sn$ occur to both inner layer and interface of layer and solder. In case of Zn-containing composite solder, $Cu_{6}Sn_{5}$ phase formed at the side of substrate and $Cu_{5}Zn_{8}$ phase formed at the other side in double layer. The shear strength of the Sn-3.5Ag/Cu joint improved by addition of IZn. The strength of the joint increases with strain rate and decreases with aging temperature

• Proceedings of the Korean Institute of Industrial Safety Conference
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• 1997.11a
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• pp.25-30
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• 1997

각각의 구조용 재료가 가지는 특성을 상호 보완하기 위하여 이종재료를 접합하여 응용할 수 있는 새로운 개념의 재료가 하이브리드 복합재료이다. 이종재료가 접한된 하이브리드 복합재료의 기계적 특성은 하이브리드 복합재료가 가지고있는 접합구조에 크게 의존되어 이에 따른 실험의 결과는 매우 다양하게 보고되고 있으며, 접합구조를 가지는 재료에 대한 연구의 관심은 탄성계수가 상이한 재료의 접합 면에 대한 계면에서의 이론적 해석분야에 있다. (중략)

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.123-127
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• 2003

액상실리콘으로 이루어진 초고압전력케이블용 프리몰드 접속재의 반도전-절연체 계면접합체를 다양한 제조조건과 조합별로 제조하여 계면접착력에 대한 영향을 검토하였다. 후가교적용 시 계면접착력이 강화되며 grade조합에 따른 특성차이가 존재하였다. 하지만 고온 장시간의 후가교 조건에서는 계면간의 화학적 결합력의 저하로 인해 오히려 접착력이 낮아지기도 하였다. 절연 RTV와의 계면접착성은 S-1재료가, 절연 LSR의 경우에는 S-3 재료가 가장 우수하였으며 도전안정성 측면에서도 S-3 재료가 상대적으로 유리하였다. 매입형 전극체를 제조하여 절연파괴거동을 연구한 결과 계면접착성과의 직접적인 상관관계는 크지 않음을 알 수 있었다.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.853-863
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• 2000

In this study, a new UBM materials system for solder flip chip interconnection of Cu pads were investigated using electroless copper (E-Cu) and electroless nickel (E-Ni) plating method. The interfacial reaction between several UBM structures and Sn-36Pb-2Ag solder and its effect on solder bump joint mechanical reliability were investigated to optimife the UBM materials design for solder bump on Cu pads. Fer the E-Cu UBM, continuous coarse scallop-like $Cu_{6}$ $Sn_{5}$ , intermetallic compound (IMC) was formed at the solder/E-Cu interface, and bump fracture occurred this interface under relative small load. In contrast, Fer the E-Ni/E-Cu UBM, it was observed that E-Ni effectively limited the growth of IMC at the interface, and the Polygonal $Ni_3$$Sn_4$ IMC was formed because of crystallographic mismatch between monoclinic $Ni_3$$Sn_4$ and amorphous E-Ni phase. Consequently, relatively higher bump adhesion strength was observed at E-Ni/E-Cu UBM than E-Cu UBM. As a result, it was fecund that E-Ni/E-Cu UBM material system was a better choice for solder flip chip interconnection on CU PadS.

• Korean Journal of Materials Research
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• v.3 no.1
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• pp.33-42
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• 1993

Abstract The increasing application of $Al_2$,$O_3$ and related ceramics as engineering materials is because of their attractive properties of fine ceramics. One solution to the wide variety of ceramic to metal combination lies in the effective joining. Active metal brazing of $Al_2$,$O_3$, to STS304 was investigated using Cu -Ti alloys. Titanium additive is chosen since it is good oxide former~. Brazing is performed under vacuum($10^{-3}$-$10^{-4}$ torr), a temperature between 1100 and 120$0^{\circ}C$ and time of 0.5-1.5hr. The microstructure of the brazed joints of $Al_2$,$O_3$ to STS304 with Cu-Ti insert metals were examined by using optical microscope and SEM and reaction products were analyzed by using EDX, WDX and XRD. Also interfacial reactions occuring during the brazing of $Al_2$,$O_3$/Cu-Ti/STS304 system are discussed. Experimental results showed formation of Titanium oxide T$i_2$$O_3$ which is attributable to the joining $Al_2$,$O_3$ to STS304 with Cu-Ti insert metal.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.709-714
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• 2018

This study researched the reasons for changing polarity in accordance with junction properties in an interface of semiconductors. The contact properties of semiconductors are related to the effect of the semiconductor's device. Therefore, it is an important factor for understanding the junction characteristics in the semiconductor to increase the efficiency of devices. For generation of various junction properties, carbon-doped silicon oxide (SiOC) was deposited with various argon (Ar) gas flow rates, and the characteristics of the SiOC was varied based on the polarity in accordance with the Ar gas flows. Tin-doped zinc oxide (ZTO) as the conductor was deposited on the SiOC as an insulator to research the conductivity. The properties of the SiOC were determined from the formation of a depletion layer by the ionization reaction with various Ar gas flow rates due to the plasma energy. Schottky contact was good in the condition of the depletion layer, with a high potential barrier between the silicon (Si) wafer and the SiOC. The rate of ionization reactions increased when increasing the Ar gas flow rate, and then the potential barrier of the depletion layer was also increased owing to deficient ions from electron-hole recombination at the junction. The dielectric properties of the depletion layer changed to the properties of an insulator, which is favorable for Schottky contact. When the ZTO was deposited on the SiOC with Schottky contact, the stability of the ZTO was improved by the ionic recombination at the interface between the SiOC and the ZTO. The conductivity of ZTO/SiOC was also increased on SiOC film with ideal Schottky contact, in spite of the decreasing charge carriers. It increases the demand on the Schottky contact to improve the thin semiconductor device, and this study confirmed a high-performance device owing to Schottky contact in a low current system. Finally, the amount of current increased in the device owing to ideal Schottky contact.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.101-105
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• 2019

The adhesion reliability of the epoxy molding compound (EMC) and the printed circuit board (PCB) interface is critical to the quality and lifetime of the chip package since the EMC protects PCB from the external environment during the manufacturing, storage, and shipping processes. It is necessary to measure adhesion energy accurately to ensure product reliability by optimizing the manufacturing process during the development phase. This research deals with the measurement of EMC/PCB interfacial adhesion energy of chip package that has warpage induced by the coefficient of thermal expansion (CTE) mismatch. The double cantilever beam (DCB) test was conducted to measure adhesion energy, and the spring back force of specimens with warpage was compensated to calculate adhesion energy since the DCB test requires flat substrates. The result was verified by comparing the adhesion energy of flat chip packages come from the same manufacturing process.

• Proceedings of the KWS Conference
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• 2003.11a
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• pp.80-82
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• 2003

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.215-217
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• 2006