• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.202-210
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• 2001

Spin dependent tunneling (SDT) junction devices of Ta/NiFe/Ta/NiFe/FeMn/NiFe/AlOx/CoFe/NiFe/Al with in-situ naturally oxidized Al barrier were fabricated using ion beam deposition and dc sputtering in UHV chamber of 10$^{-9}$ Torr. The maximum tunneling magnetoresistance (TMR) and the product resistance by junction (R$_{j}$ A) are 16-17% and 50-60 $\Omega$${\mu}{\textrm}{m}$$^2$, respectively. The values of TMR and (R$_{j}$ A) with field annealing were slightly increased. The TMR and (R$_{j}$ A) dependence versus the junction area size was observed. These results were explained by using sheet resistance effect of bottom electrode and spin channel effects.

• Journal of Welding and Joining
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• v.15 no.4
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• pp.178-186
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• 1997

The purpose of this study is to evaluate the J-R curve characteristics for the 5083 aluminum alloy weldment by the load ratio analysis. The results of the load ratio analysis are compared with those of the J-R curve which are obtained by the ASTM unloading compliance method. The crack length calculated by the load ratio analysis is agrees well with the measured final crack length. The slope of the exponential J-R curve estimated by the load ratio analysis is slightly smaller than that by the ASTM unloading compliance method. The exponential correlation of the J-R curve for the 5083 aluminum alloy base metal by the load ratio analysis is J = 93.88 ${\Delta}{\alpha}^{0.375}$. That for the weld metal and HAZ is J = 69.87 ${\Delta}{\alpha}^{0.389}$ and J = 70.59 ${\Delta}{\alpha}^{0.359}$ respectively. The J-R curve obtained by the ASTM unloading compliance method is overpredicted and should be offsetted due to the initial negative crack. On the other hand, the load ratio analysis method can evaluate the J-R curve by only load displacement curve without particular crack measurement equipment.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.5
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• pp.37-42
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• 2004

Shallow $p^{＋}$-n junctions were formed by preamorphization, low-energy ion implantation and dual-step annealing processes. Germanium ions were implanted into silicon substrates for preamorphization. The dopant implantation was performed into the preamorphized and non-preamorphized substrates using B $F_2$2 ions. Rapid thermal anneal (RTA) and furnace anneal (FA) were employed for dopant activation and damage removal. Samples were annealed by one of the following four methods; RTA(75$0^{\circ}C$/10s)＋Ft FA＋RTA(75$0^{\circ}C$/10s), RTA(100$0^{\circ}C$/10s)＋FA, FA＋The Ge Preamorphized sample exhibited a shallower junction depth than the non-preamorphized sample. When the employed RTA temperature was 100$0^{\circ}C$, FA＋RTA annealing sequence exhibited better junction characteristics than RTA＋FA thermal cycle from the viewpoint of junction depth, sheet resistance, $R_{s}$$.$ $x_{j}$, and leakage current.t.

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.200-201
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• 2005

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.10
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• pp.495-499
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• 2004

Characteristics of ohmic Ni/Si/Ni contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Ni/Si/Ni sputtered sequentially The annealings were performed at 950℃ using RTP in vacuum ambient and N₂ ambient, respectively. The specific contact resistivity(p/sub c/), sheet resistance(R/sub s/), contact resistance (R/sub c/) transfer length(L/sub T/) were calculated from resistance(R/sub T/) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were p/sub c/ = 3.8×10/sup -5/Ω㎠, R/sub c/ = 4.9 Ω and R/sub T/ = 9.8 Ω, those of sample annealed at N₂ ambient were p/sub c/ = 2.29×10/sup -4/Ω㎠, R/sub c/ = 12.9 Ω and R/sub T/ = 25.8 Ω. The physical properties of contacts were examined using XRD 3nd AES. The results showed that nickel silicide was formed on SiC and Ni was migrated into SiC. This result indicates that Ni/Si/Ni ohmic contact would be useful in high performance electronic devices.

• Proceedings of the Korean Magnestics Society Conference
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• 2005.06a
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• pp.94-95
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• 2005

• Journal of Welding and Joining
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• v.7 no.1
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• pp.42-50
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• 1989

The application of fracture mechanics is being increased gradually to assess the safety of welded structures containing crack. Fatigue crack propagation behavior and elastic-plastic fracture toughness J$_{IC}$ of home made flux cored wire(1.22mm) CO$_{2}$ weldments was discussed. Especially fatigue crack propagation test was carried out by .DELTA.K control instead of load control and elastic-plastic fracture toughness J$_{IC}$ was obtained by ASTM-R curve method on C.T.specimen in transverse direction of weldments. The results obtained are as follows; (1) Weld metal presented an almost complete similarity to base metal on fatigue crack propagation rate in transverse direction. (2) Weld metal was more than base metal on J$_{IC}$ value in transverse direction. (3) F.C.W. CO$_{2}$ weldments had an excellent characteristic of fatigue crack propagation rate and J$_{IC}$ in less than 50kg/mm$^{2}$ steel grade, this would result from that weld metal had good static strength.trength.

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.276-278
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• 2006

The switching characteristics of magnetic tunnel junctions (MTJs) comprising amorphous ferromagnetic CoFeSiB free layer have been investigated. CoFeSiB was used for the free layer to enhance the switching characteristics. The typical junction structure was $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(in\;nm)$. CoFeSiB has low saturation magnetization ($M_{s}$) of $560\;emu/cm^{3}$ and high anisotropy constant ($K_{u}$) of $2800\;erg/cm^{3}$. These properties caused low coercivity ($H_{c}$) and high sensitivity in MTJs, and it also confirmed in submicrometer-sized elements by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. By increasing CoFeSiB free layer thickness, the switching characteristics became worse due to increase of the demagnetization field.

• Journal of Welding and Joining
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• v.32 no.5
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• pp.1-6
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• 2014

This study aims at manufacturing SA welded API-X70 line-pipe with sour gas resistance. A pipe was manufactured by JCO bending process and SA welding using the API-X70 plate guaranteed HIC resistance. SA welded pipe was expanded in order to reduce the residual stress. The evaluation of a pipe for resistance to HIC and SSCC were performed by the RS D 0004 and RS D 0005 standards. For verification that a pipe has acceptable resistance to HIC, fullscale test was carried out. Results showed no cracking for the HIC and SSCC.

• Journal of the Korean Magnetics Society
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• v.15 no.6
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• pp.315-319
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• 2005

To obtain low switching field ($H_{SW}$) we introduced amorphous ferromagnetic $Co_{70.5}Fe_{4,5}Si_{15}B_{10}$ single and synthetic antiferromagnet (SAF) free layers in magnetic tunnel junctions (MTJs). The switching characteristics for MTJs with structures $Si/SiO_2/Ta$ 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nm) were investigated and compared to MTJs with $Co_{75}Fe_{25}$ and $Ni_{80}Fe_{20}$ free layers. CoFeSiB showed a lower saturation magnetization of $560 emu/cm^3$ and a higher anisotropy constant of $2800\;erg/cm^3$ than CoFe and NiFe, respectively. An exchange coupling energy ($J_{ex}$) of $-0.003erg/cm^2$ was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the CoFeSiB single and SAF free layer MTJs, it was frond that the size dependence of the $H_{SW}$ originated from the lower $J_{ex}$ experimentally and by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. The CoFeSiB SAF structures showed lower $H_{SW}$ than that of NiFe, CoFe and CoFeSiB single structures. The CoFeSiB SAF structures were proved to be beneficial far the switching characteristics such as reducing the coercivity and increasing the sensitivity in micrometer to submicrometer-sized elements.