• Korean Journal of Materials Research
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• v.3 no.2
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• pp.121-130
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• 1993

The GaP crystals were grown by synthesis solute diffusion method and its properties were investigated. High quality single crystals were obtained by pull-down the crystal growing ampoule with velocity of 1.75mm/day. Etch pits density along vertical direction of ingot was increased from 3.8 ${\times}{10^4}$c$m^{-2}$ of the first freeze to 2.3 ${\times}{10^5}$c$m^2$ of the last freeze part. The carrier concentration and mobilities at room temperature were measured to 197.49cc$m^2$/V.sec and 6.75 ${\times}{10^{15}}$c$m^{-3]$, respectively. The temperature dependence of optical energy gap was empirically fitted to $E_g$(T)=[2.3383-(6.082${\times}{10^{-4}}$)$T^2$/(373. 096+TJeV. Photoluminescence spectra measured at low temperature were consist with sharp line-spectra near band-gap energy due to bound-exciton and phonon participation in band edge recombination process. Zn-diffusion depth in GaP was increased with square root of diffusion time and temperature dependence of diffusion coefficient was D(Tl = 3.2 ${\times}{10^3}$exp( - 3.486/$k_{\theta}$T)c$m^2$/sec. Electroluminescence spectra of p-n GaP homojunction diode are consisted with emission at 630nm due to recombination of donor in Zn-O complex center with shallow acceptors and near band edge emission at 550nm. Photon emission at current injection level of lower than 100m A was due to the band-filling mechanism.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.890-897
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• 1998

The direct wafer bonding between n-InP(001) wafer and the ${Si}_3N_4$(200 nm) film grown on the InP wafer by PECVD method was investigated. The surface states of InP wafer and ${Si}_3N_4$/InP which strongly depend upon the direct wafer bonding strength between them when they are brought into contact, were characterized by the contact angle measurement technique and atomic force microscopy. When InP wafer was etched by $50{\%}$ HF, contact angle was $5^{\circ}$ and RMS roughness was $1.54{\AA}$. When ${Si}_3N_4$ was etched by ammonia solution, RMS roughness was $3.11{\AA}$. The considerable amount of initial bonding strength between InP wafer and ${Si}_3N_4$/InP was observed when the two wafer was contacted after the etching process by $50{\%}$ HF and ammonia solution respectively. The bonded specimen was heat treated in $H^2$ or $N^2$, ambient at the temperature of $580^{\circ}C$-$680^{\circ}C$ for lhr. The bonding state was confirmed by SAT(Scannig Acoustic Tomography). The bonding strength was measured by shear force measurement of ${Si}_3N_4$/InP to InP wafer increased up to the same level of PECVD interface. The direct wafer bonding interface and ${Si}_3N_4$/InP PECVD interface were chracterized by TEM and AES.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.301-307
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• 2002

Direct bonded SOI wafer pairs with $Si ll SiO_2/Si_3N_4 ll Si$ the heterogeneous insulating layers of SiO$_2$-Si$_3$N$_4$are able to apply to the micropumps and MEMS applications. Direct bonding should be executed at low temperature to avoid the warpage of the wafer pairs and inter-diffusion of materials at the interface. 10 cm diameter 2000 ${\AA}-SiO_2/Si(100}$ and 560 $\AA$- ${\AA}-Si_3N_4/Si(100}$ wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were pre- mated with facing the mirror planes by a specially designed aligner in class-100 clean room immediately. We employed a heat treatment equipment so called fast linear annealing(FLA) with a halogen lamp to enhance the bonding of pre mated wafers We kept the scan velocity of 0.08 mm/sec, which implied bonding process time of 125 sec/wafer pairs, by varying the heat input at the range of 320~550 W. We measured the bonding area by using the infrared camera and the bonding strength by the razor blade clack opening method, respective1y. It was confirmed that the bonding area was between 80% and to 95% as FLA heat input increased. The bonding strength became the equal of $1000^{\circ}C$ heat treated $Si ll SiO_2/Si_3N_4 ll Si$ pair by an electric furnace. Bonding strength increased to 2500 mJ/$\textrm{m}^2$as heat input increased, which is identical value of annealing at $1000^{\circ}C$-2 hr with an electric furnace. Our results implies that we obtained the enough bonding strength using the FLA, in less process time of 125 seconds and at lowed annealing temperature of $400^{\circ}C$, comparing with the conventional electric furnace annealing.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.3
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• pp.63-67
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• 2016

In this paper, we present an indirect method of elastic modulus measurement for various lamination layers formed on polymer-based compliant substrates. Although the elastic modulus of every component is crucial for mechanically reliable microelectronic devices, it is difficult to accurately measure the film properties because the lamination layers are hardly detached from the substrate. In order to resolve the problem, 3-point bending test is conducted with a film-substrate specimen and area transformation rule is applied to the cross-sectional area of the film region. With known substrate modulus, a modulus ratio between the film and the substrate is calculated using bending stiffness of the multilayered specimen obtained from the 3-point bending test. This method is verified using electroplated copper specimens with two types of film-substrate structure; double-sided film and single sided film. Also, common dielectric layers, prepreg (PPG) and dry film solder resist (DF SR), are measured with the double-sided specimen type. The results of copper (110.3 GPa), PPG (22.3 GPa), DF SR (5.0 GPa) were measured with high precision.

• Journal of the Korea institute for structural maintenance and inspection
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• v.14 no.5
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• pp.128-135
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• 2010

Polymer-modified cement mortar(PCM) has been widely used for strengthening of the concrete structures due to its excellent physical properties such as high strength and durability. Adhesive strength or behavior, on the other hands, between PCM and concrete is very important in strengthening the concrete member using PCM. Therefore the adhesive failure mechanism between PCM and concrete should be fully verified and understood. This study was performed to evaluate adhesive strength of PCM to the concrete by the direct pull-out test. In the direct pull-out tests, the adhesive strength under the various pre-treatment conditions such as immersion, thunder shower, freezing and thawing are evaluated. Also, the field direct pull-out test are performed to investigate the adhesive strength of mock-up test specimens. In the results of the test, the adhesive strength value by field test are lower than those of the standard curing condition. From these comparison and investigation, field test result was similar with the thunder shower test result. The results of the test was used to evaluate the korean industrial standard of polymer modified cement mortars for maintenance in concrete.

• Journal of Korean Society of Steel Construction
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• v.15 no.6 s.67
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• pp.683-691
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• 2003

Recently, the steel has been increaseingly used as an integrated part of high-rise buildings, which often composed of steel structures, steel reinforced concrete structures and composite structures. The steel base is designed to transfer the stresses induced from steel column to the reinforced concrete footing through the base plate. However, in the design of steel structures and steel reinforced concrete structure, it is generally difficult to evaluate the bearing strength of the steel base subjected to large axial force. Furthermore, the material used in steel base is quite different from those used in other connections and a load transferring mechanism of steel base is very complicated in nature. Therefore, a special attention must be placed in design and construction of steel base. In generally, the bearing strength test and research of the steel base subjected to concentrated load are carried out. But, in the design of the structures, uniaxial eccentric load is loaded to the steel base of the steel structures. In this research, the bearing strength and the me of failure considering eccentric loads and eccentric length, were experimented when eccentric load is loaded to the steel base of steel structures. Based on the test results, a basic design reference is suggested for a reasonable design of steel structures, steel reinforced concrete structures and composite structures.

• Journal of Welding and Joining
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• v.17 no.2
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• pp.25-28
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• 1999

국내에 건설되어 거의 20∼30년 가동되고 있는 발전설비, 석유화학 플랜트 등 거대설비 기기의 건전성(integrity) 및 신뢰성 확보와 잔존수명 예측을 위해서는 구조물 내부 또는 표층부에 존재하는 결 함의 특성을 아는 것과 함께 그 재료의 특정 부위에 어느정도의 응력이나 변형이 있는가를 아는 것이 매우 중요하다. 일반적으로 강 용접부의 비파괴적 결함검출에는 주로 SV파(vertically shear wave)와 SH파(horizontally shear wave)라 불리는 횡파를 이용한 초음파사각탐상법이 실용화되어 이용되고 있다. 그러나 비파괴적인 방법에 의한 실험적인 잔류응력 측정, 변형해석법에는 전기 저항 및 자기 스트레인 게이지법, X선회절법, 광탄성법(photoelasticity), 모아레(Mohr's)법, 레이저스펙클(Laser speackle)법, 응 력도료법, Barkhausen Nosise법, Caustics법 등이 제시되어 있으나 그 유용성 면에서는 아직 해결되야할 문제가 많이 남아 있는 실정이다. 응력이나 변형을 해석하는 방법으로 이론적 방법, 계산적 방법 실험적 방법이 잇다. 이론적 방법에는 재료 역학적으로 취급하는 방법, 탄성론 등이 있고, 계산적인 방법에는 유한요소법이 있지만, 이론적 방법이나 계산적 방법만으로는 해석이 불가능한 경우가 많기 때문에 실험 적 방법이 필요하게 된다. 이 글에서는 파괴 시험 또는 다른 비파괴평가기술에 비해 간편한 측정, 높은 측정정도, 시험결과 도출의 신속성, 검사비용의 절감 등 많은 장점을 가지고 있고 실험적으로 유용성이 일부 검증되고 있는 음탄성법(Acoustoelasticity)에 의한 잔류응력 측정법에 관해 소개하고자 한다.TEX> mg/L(평균 49 mg/L)로 비교적 안정적인 처리효율을 보여주었다. 본 연구결과 HVC 공정은 화학약품 사용량의 절감 및 이에 따른 화학슬러지 발생량의 감소를 기대 할 수 있는 친환경기술로 유지관리비를 최소화할 수 있는 장점이 있었다. 않은 사람들 중 미래의 검진실행의지에 건강소식지가 영향을 미친 경우는 48.7%였다. 보건교육을 받은 후 유방암 자가검진 실천율은 사업군에서 53.9%로 받기 전의 27.3%보다 증가하였으나 대조군의 경우는 별 차이가 없었다. 연령별로는 60대가 가장 높았고 사업군에서 검진율의 증가분은 30대가 가장 컸다. 교육수준별로는 사업군은 고졸이, 대조군은 전문대졸이 가장 높았고 사업군에서 검진율의 증가분은 고졸에서 가장 컸다. 보건교육 후 유방암과 관련된 건강지식의 정도는 사업군이 3.7점으로 대조군보다 유의하게 높았으며, 유방암 자가검진법을 실천하는 사람들의 동기는 ‘일반 대중매체의 영향’이 가장 많았으며 건강소식지가 동기인 경우도 20.4%였다. 사업군에서 건강소식지가 유방암 자가검진법 실천에 영향을 미친 경우가 79.6%였으며 유방암 자가검진법에 관한 보건교육을 받고 실천하지 않은 사람들 중 미래의 실천의지에 건강소식지가 영향을 미친 경우는 43.6%였다. 이상의 소견에서 지역주민을 대상으로 인쇄매체를 통한 보건교육은 인쇄물만으로도 쉽게 실천 할 수 있는 유방암 자가검진법이 가장 효과적이었으며, 자궁암검진에 관해서도 검진을 받을 수 있도록 지역사회의 보건의료의 하부구조를 정비하여 제도적 장치를 마련하고 정보를 제공한다면 자궁암검진 실천율도 증가할 것이다.고 12.9% 의 발달율을 보여 유의적인 차이를 보이지 않았다. 이상의 결과로 보아 핵이식 수정란을 효율적으로 생산하기 위하여

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1155-1159
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• 1999

Thin film solar cells on a glass/$SnO_2$ substrate with p-SiC/i-Si/n-Si heterojunction structures were fabricated using a plasma-enhanced chemical-vapor deposition system. The photovoltaic properties of the solar cells were examined with varying the gas phase composition, x=$CH_4/\;(SiH_4+CH_4)$, during the deposition of the p-SiC layer. In the range of x=0~0.4, the efficiency of solar cell increased because of the increased band gap of the p-SiC window layer. Further increase in the gas phase composition, however, led to a decrease in the cell efficiency probably due to in the increased composition mismatch at the p-SiC/i-Si layers. As a result, the efficiency of a glass/$SnO_2$/p-SiC/i-SiC/i-Si/n-Si/Ag thin film solar cell with $1cm^2$ area was 8.6% ($V_{oc}$=0.85V, $J_{sc}$=16.42mA/$cm^2$, FF=0.615) under 100mW/$cm^2$ light intensity.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.28-32
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• 2009

Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, ${\Phi}_B$) was 107 V and 0.67 eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition and etching method was employed, and the electrical properties of the diodes were improved. The modified SBDs showed enhanced electrical properties, as witnessed by a breakdown voltage of 635 V, a Schottky barrier height of ${\Phi}_B$=1.48 eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of $V_F$=1.6 V, a specific on resistance of $R_{on}=2.1m{\Omega}-cm^2$ and a power loss of $P_L=79.6Wcm^{-2}$.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.547-551
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• 2008

Crack-free joining of $Si_3N_4\;and\;Al_2O_3$ using 15 layers has been achieved by a unique approach introducing Sialon polytypoids as a functionally graded materials (FGMs) bonding layer. In the past, hot press sintering of multilayered FGMs with 20 layers of thickness $500{\mu}m$ each has been fabricated successfully. In this study, the number of layers for FGM was reduced to 15 layers from 20 layers for optimization. For fabrication, model was hot pressed at 38 MPa while heating up to $1700^{\circ}$, and it was cooled at $2^{\circ}$/min to minimize residual stress during sintering. Initially, FGM with 15 layers had cracks near 90 wt.% 12H / 10 wt.% $Al_2O_3$ and 90 wt.% 12H/10 wt.% $Si_3N_4$ layers. To solve this problem, FEM (finite element method) program based on the maximum tensile stress theory was applied to design optimized FGM layers of crack free joint. The sample is 3-dimensional cylindrical shape where this has been transformed to 2-dimensional axisymmetric mode. Based on the simulation, crack-free FGM sample was obtained by designing axial, hoop and radial stresses less than tensile strength values across all the layers of FGM. Therefore, we were able to predict and prevent the damage by calculating its thermal stress using its elastic modulus and coefficient of thermal expansion. Such analyses are especially useful for FGM samples where the residual stresses are very difficult to measure experimentally.