• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.327-332
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• 2011

Plasma polymerized styrene (ppS) thin films were prepared on ITO coated glass substrates for a MIM (metal-insulator-metal) structure with thermally evaporated Au thin film as metal contact. Also the ppS thin films were applied as organic insulator to a MIS (metal-insulatorsemiconductor) device with thermally evaporated pentacene thin film as organic semiconductor layer. After the I-V and C-V measurements with MIM and MIS structures, the ppS revealed relatively higher dielectric constant of k=3.7 than those of the conventional poly styrene and very low leakage current density of $1{\times}10^{-8}Acm^{-2}$ at electric field strength of $1MVcm^{-1}$. The MIS structure with the ppS dielectric layer showed negligible hysteresis in C-V characteristics. It would be therefore expected that the proposed ppS could be applied as a promising dielectric/insulator to organic thin film transistors, organic memory devices, and flexible organic electronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.139-139
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• 2010

금속 실리사이드 나노입자는 열적 및 화학적 안정성이 뛰어나고, 절연막내에 일함수 차이에 따라 깊은 양자 우물구조가 형성되어 비휘발성 메모리 소자를 제작할 수 있다. 그러나 단일 $SiO_2$ 절연막을 사용하였을 경우 저장된 전하의 정보 저장능력 및 쓰기/지우기 시간을 향상시키는 데 물리적 두께에 따른 제한이 따른다. 본 연구에서는 터널장벽 엔지니어링을 통하여 물리적인 두께는 단일 $SiO_2$ 보다는 두꺼우나 쓰기/지우기 동작을 위하여 인가되는 전기장에 의하여 상대적으로 전자가 느끼는 상대적인 터널 절연막 두께를 감소시키는 방법으로 동작속도를 향상 시킨 $SiO_2/Si_3N_4/SiO_2$ 및 $Si_3N_4/SiO_2/Si_3N_4$ 터널 절연막을 사용한 금속 실리사이드 나노입자 비휘발성 메모리를 제조하였다. 제조방법은 우선 p-type 실리콘 웨이퍼 위에 100 nm 두께로 증착된 Poly-Si 층을 형성 한 이후 소스와 드레인 영역을 리소그래피 방법으로 형성시켜 트랜지스터의 채널을 형성한 이후 그 상부에 $SiO_2/Si_3N_4/SiO_2$ (2 nm/ 2 nm/ 3 nm) 및 $Si_3N_4/SiO_2/Si_3N_4$ (2 nm/ 3 nm/ 3 nm)를 화학적 증기 증착(chemical vapor deposition)방법으로 형성 시킨 이후, direct current magnetron sputtering 방법을 이용하여 2~5 nm 두께의 $WSi_2$ 및 $TiSi_2$ 박막을 증착하였으며, 나노입자 형성을 위하여 rapid thermal annealing(RTA) system을 이용하여 $800{\sim}1000^{\circ}C$에서 질소($N_2$) 분위기로 1~5분 동안 열처리를 하였다. 이후 radio frequency magnetron sputtering을 이용하여 $SiO_2$ control oxide layer를 30 nm로 증착한 후, RTA system을 이용하여 $900^{\circ}C$에서 30초 동안 $N_2$ 분위기에서 후 열처리를 하였다. 마지막으로 thermal evaporator system을 이용하여 Al 전극을 200 nm 증착한 이후 리소그래피와 식각 공정을 통하여 채널 폭/길이 $2{\sim}5{\mu}m$인 비휘발성 메모리 소자를 제작하였다. 제작된 비휘발성 메모리 소자는 HP 4156A semiconductor parameter analyzer와 Agilent 81101A pulse generator를 이용하여 전기적 특성을 확인 하였으며, 측정 온도를 $25^{\circ}C$, $85^{\circ}C$, $125^{\circ}C$로 변화시켜가며 제작된 비휘발성 메모리 소자의 열적 안정성에 관하여 연구하였다.

• Korean Chemical Engineering Research
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• v.61 no.3
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• pp.426-438
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• 2023

Lithium-sulfur batteries, recently attracting attention as next-generation batteries, have high energy density but are limited in application due to sulfur's insulating properties, shuttle phenomenon, and volume expansion. This study used an economical and simple vacuum filtration method to prepare a freestanding electrode without a binder and collector. Carbon nanotubes (CNTs) are used to improve the electrical conductivity of sulfur, where CNT also acts as both collector and conductor. In addition, metal oxides (MO_x, M=Ni, Mg), which are easy to adsorb lithium polysulfide, are added to the CNT/S electrode to suppress the shuttle reaction in lithium-sulfur batteries, which is a result of suppressing the loss of active sulfur material due to the excellent adsorption of lithium polysulfide by metal oxides. The MO_x@CNT/S electrode exhibited higher capacity characteristics and cycle stability than the CNT/S electrode without metal oxides. Among the MO_x@CNT/S electrodes, the NiO@CNT/S electrode displayed a high discharge capacity of 780 mAh g^-1 at 1 C and an extreme capacity decrease to 134 mAh g^-1 after 200 cycles. Although the MgO@CNT/S electrode exhibited a low discharge rate of 544 mAh g^-1 in the initial cycle, it showed good cycle stability with 90% of capacity retention up to 200 cycles. Further, to achieve high capacity and cycle stability, the Ni_0.7Mg_0.3O@CNT/S electrode, mixed with Ni:Mg in the ratio of 0.7:0.3, manifested an initial discharge rate of 755 mAh g^-1 (1 C) and a capacity retention rate of more than 90% after 200 cycles. Therefore, applying binary metal oxides to CNT/S provides a freestanding electrode for developing economical and high-performance Li-S batteries, effectively improving lithium polysulfide's high capacity characteristics and dissolution.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.149-154
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• 2018

This paper describes the fabrication and heat transfer property of 50 watts rated LED array module where multiple chips are mounted on chip-on-board type ceramic-metal hybrid substrate with high heat dissipation property for high power street and anti-explosive lighting system. The high heat transfer ceramic-metal hybrid substrate was fabricated by conformal coating of thick film glass-ceramic and silver pastes to form insulation and conductor layers, using thick film screen printing method on top of the high thermal conductivity aluminum alloy heat-spreading panel, then co-fired at $515^{\circ}C$. A comparative LED array module with the same configuration using epoxy resin based FR-4 PCB with thermalvia type was also fabricated, then the thermal properties were measured with multichannel temperature sensors and thermal resistance measuring system. As a result, the thermal resistance of the ceramic-metal hybrid substrate in the $4{\times}9$ type LEDs array module exhibited about one third to the value as that of FR-4 substrate, implying that at least triple performance of heat transfer property as that of FR-4 substrate was realized.

• Journal of Radiation Protection and Research
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• v.30 no.2
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• pp.69-75
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• 2005

Gas avalanche microdetectors, such as micro-strip gas chamber (MSGC), micro-gap chamber (MGC), micro-dot chamber (MDOT), etc., are operated under high voltage to induce large electron avalanche signal around micro-size anodes. Therefore, the anodes are highly exposed to electrical damage, for example, sparking because of the interaction between high electric field strength and charge multiplication around the anodes. Gas electron multiplier (GEM) is a charge preamplifying device in which charge multiplication can be confined, so that it makes that the charge multiplication region can be separate from the readout micro-anodes in 9as avalanche microdetectors possible. Primary electron collection efficiency is an important measure for the GEM performance. We have defined that the primary electron collection efficiency is the fractional number of electron trajectories reaching to the collection plane from the drift plane through the GEM holes. The electron trajectories were estimated based on 3-dimensional (3D) finite element method (FEM). In this paper, we present the primary electron collection efficiency with respect to various GEM operation parameters. This simulation work will be very useful for the better design of the GEM.

• Fire Science and Engineering
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• v.33 no.6
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• pp.114-119
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• 2019

We found metallic migration phenomena at the fire scene in Printed circuit board (PCB) of LED light equipment which are commonly used. Accordingly we did this study. In order to generate rapidly metallic migration, we experiment the water drop test under low voltage (3.0 V) and a small amount of water condition. As a results of our experiment, we saw the growth of metallic migration of Copper and checked directly short of the PCB between isolated two poles by Cu migration. Finally we saw the shape of dendrite pattern by Cu migration using Scanning electron microscope (SEM) and analyzed that components via Energy dispersive Spectrometer (EDS).

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.5
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• pp.791-796
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• 2017

In this study, we investigated the influence of the fabrication process of stacked capacitors on the cell capacitance by using Load Lock (L/L) LPCVD system for dielectric thin film of DRAM capacitor. As a result, it was confirmed that the capacitance difference of about 3-4 fF is obtained by reducing the effective thickness of the oxide film by about $6{\AA}$ compared to the conventional non-L/L device. In addition, Cs was found to be about 3-6 fF lower than the calculated value, even though the measurement range of the thickness of the nitride film as an insulating film was in a normal management range. This is because the node poly FI CD is managed at the upper limit of the spec, resulting in a decrease in cell surface area, which indicates a Cs reduction of about 2fF. Therefore, it is necessary to control the thickness of insulating film and CD management within 10% of the spec center value in order to secure stable Cs.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.1
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• pp.92-99
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• 2009

Deeply-driven ground rod in the rainy season may contact with rainwater and ground water. When surge voltages are applied to the submerged ground rods, the ionization around the ground rods are occurred. Ionization in soil and/or water is affected in dynamic performance of ground rod systems. This work aims at studying the transient performance of ground rod system under impulse voltage using scale model in an electrolytic tank. The potential reduction and energy dispersion caused by ionization were treasured and quantitatively analyzed using the Matlab Program. As a result, the peak voltage at the terminal of ground rod was varied with water resistivity and charging voltage of Marx generator. The potential at the terminal of the ground rod was approximately reduced to a half of the applied voltage just below breakdown voltage. Also the energy more than half of the applied energy was dispersed through the ground rod due to ionization just below breakdown voltage.

• Journal of the Korean Magnetics Society
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• v.13 no.3
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• pp.91-96
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• 2003

Cross-geometrical Cr/Co/Al-Ox/Co/Ni-Fe tunnel junctions were fabricated by magnetron sputtering. To form an insulating layer, The Al layer was oxidized in an atmosphere of oxygen-argon mixture at low power after deposition. To enhance the coercivity of the bottom Co layer, The Cr seed layer was deposited on the glass and it led to increase in coercivity. The coercivity increase is due to the increase of roughness through the Cr thickness. In over oxidation time, the oxidation of Co bottom layer and flat interface of insulator can increase the bottom Co coercivity. But TMR ratio gradually decrease. TMR ratio is relevant with Cr thickness, insulator thickness, and oxidation time. The maximum TMR ratio was 14% at room temperature and the TMR ratio was decreased to half at 0.51 V.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.2206-2207
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• 2008

본 논문에서는 분전반에서의 화재 위험 요소와 화재위험 요소에 대한 현장 실태조사 결과를 분석하였다. 분전반에서의 화재 위험 요소는 크게 전기적 요인, 환경적 요인, 물리적 요인으로 나눌 수 있으며 전기적 요인으로는 단락, 과부하(과전류), 접촉불량, 전류 불평형 등이 있으며 환경적 요인으로는 수분(염분 등), 먼지(분진, 목분, 철분 등), 온도(고온) 등에 의한 절연파괴, 기기 손상, 오동작 등이 있다. 물리적 요인으로는 기계적인 진동이나 충격 등에 의한 전기적 접속부의 이완에 의한 발열 등을 들 수 있다. 이러한 화재 위험 요인에 대하여 현장실태조사를 실시한 결과, 일부 분전반에서 내부에 먼지 등 이물질이 차단기, 전선, 단자대 등의 표면에 부착되어 있음을 확인할 수 있었으며 수분이나 염분 등의 영향으로 전극간 절연물 표면의 열화로 화재가 발생할 가능성이 있다. 또한, 적외선 열화상 분석결과, 일부 차단기 단자에서 국부 발열이 관측되었으며, 부하 분담의 불평형에 의한 발열도 확인되었다. 이러한 위험요인에 의한 화재 예방을 위하여 규정된 전선 굵기의 사용과 적정 체결압력의 확보, 상간 전류 불평형을 줄이기 위한 부하 분담의 조정이 필요하다. 향후, 분전반에서의 전기화재, 감전사고 등 전기재해의 예방을 위하여 지속적이고 체계적인 유지관리는 물론 사고 발생 전에 이상 징후를 사전에 감지하여 조치를 취할 수 있도록 하는 기술의 개발과 현장 적용이 요구된다.