• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.35-38
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• 2003

Polymer light emitting diode (PLED) with an ITO/MEH-PPV/Al structure were prepared by spin coating method on the ITO (indium tin oxide)/glass substrates, using poly(2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene (MEH-PPV) as the light emitting material. The dependence of heat treatment on the electrical and optical properties for the prepared PLED samples were investigated. The luminance decreased greatly from 630 cd/$\m^2$ to 280 cd/$\m^2$ at 10V input voltage as the heating temperature increased from $65^{\circ}C$ to $170^{\circ}C$. In addition, the luminance efficiency was found to be about 2 lm/W for the sample heat treated at $65^{\circ}C$. These results may be related to the interface roughness and/or the formation of an insulation layer, which is caused by the reaction between electrode and MEH-PPV organic luminescent film layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.256-256
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• 2015

이산화 바나듐 ($VO_2$)은 340 K 임계온도를 기점으로 금속-절연체 상전이를 통해 전기적, 광학적 특성이 가역적으로 변하는 물질로 잘 알려져 있다. 그러나 낮은 가시광 투과율과 비선호적인 색상(황갈색)으로 인해 열변색 스마트 창호응용과 관련하여 해결해야 할 문제로 남아있다. 본 연구에서는 상기 문제를 해결하고자 고분자 나노 구 템플릿을 응용하여 2차원의 벌집구조를 갖는 $VO_2$ 박막을 졸 겔 방법을 통해 제작하였으며 가시광 투과율 향상을 유도하였다. 나노 구의 지름과 코팅조건에 따라 구조변화를 유도하였으며 FE-SEM과 AFM을 통해 박막의 구조적 변화를 측정하였다. 결과로부터 나노 구의 역상모양을 갖는 박막이 형성 되었으며 직경에 따라 패턴 간격이 확연하게 변화되었음을 확인 하였다. 나노 구가 위치하고 있던 자리로부터 빈 공간형성을 유도할 수 있었으며 이는 가시광 투과율향상에 직접적 영향을 주었다. 또한 상기 패턴화된 $VO_2$ 박막은 광학 스위칭 효율을 유지하면서 주기적 패턴으로부터 시각적으로 광결정유도를 통한 미적 시너지를 보였며 본 연구로부터 $VO_2$기반 스마트 창호 응용에 많은 기여가 기대된다.

• Journal of Biomedical Engineering Research
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• v.24 no.2
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• pp.83-89
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• 2003

The gas electron multiplier placed in the drift volume of conventional gas detectors, is a conceptually simple device for producing a large gas gain by concentrating the drift electric field over a very short distance to the point that electron avalanching occurs(〉 10$^4$ V/cm), greatly increasing the number of drifting electrons. This device consists of a thin insulating foil of several tens of urn in thickness. covered on each side with a thin metal layer(Cu), with tiny holes, usually 100 ${\mu}{\textrm}{m}$ or less in diameter. and with a spacing of 100-200 ${\mu}{\textrm}{m}$ through the entire foil. perforated by using chemical etching or high-powered laser beam technique In this study, we have investigated its operating properties with various experimental conditions, and demonstrated the possibility of using this device as a digital X-ray imaging sensor, by acquiring X-ray images based on the scintillation properties of the gas electron multiplier with standard CCD camera.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.314-322
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• 1997

The thin film processing and the applicability as a IMD material of SiO2 aerogels providing ultralow dielec-tric properties were studied. The SiO2 aerogel films with 0.5g/㎤ density (78% porosity) and 4000~21000$\AA$ thickness could be prepared at 25$0^{\circ}C$ and 1160 psig by supercritical drying of wet-gel films, which were spin-coated at the spin rate of 1000~7000 rpm on p-Si(111) wafer under the isopropanol atmosphere. The optimum viscosity of polymeric SiO2 sols for spin coating was in the range of 10~14 cP. The main fac-tors being able to control the film thickness and microstructures were found to be sol concentration, spin rpm, and aging time of wet-gel films. The dielectric constant of the SiO2 aerogel thin film was around 2.0 low enough to be applied to the next generation semiconductor device beyond the giga level.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.42.1-42.1
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• 2011

박막형 디스플레이구서에 있어서 투명전극은 필수적이다. 투명전극은 정보를 표시하기 위해 빛을 외부로 방출시키거나 태양광 등을 소자 내부로 입사시켜야 한다. 또한 전극을 형성하는 박막은 높은 광투과율과 ${\sim}10-4{\Omega}cm$ 정도의 낮은 전기비저항을 가져야 한다. 가장 널리 사용되는 투명전극으로 ITO (Indium Tin Oxide)는 인듐의 독성, 저온증착의 어려움, 스퍼터링시 음이온 충격에 의한 막 손상으로 저항의 증가 및 액정디스플레이의 투명전극으로 사용될 경우 $400^{\circ}C$정도의 높은 온도와 수소플라즈마 분위기에서 장시간 노출시 열화로 인한 광학적 특성변화가 문제로 지적된다. 이러한 문제 해결의 대안으로 ZnO 산화물 반도체가 있는데 ITO 박막에 비해 비저항이 높기 때문에 도핑을 이용한 비저항을 ${\sim}10-4{\Omega}cm$ 정도로 낮추어야 한다. 투명전도막으로는 ITO, FTO 등과 더블어 체적 저항율은 다소 높으나 환원성 분위기에 대한 내성, 가시광 영역에서의 높은 광투과율과 저렴한 가격 등의 장점 등으로 AZO 박막이 주목 받고 있다. ZnO는 ITO 나 FTO에 비해서 700 kJ/mol의 큰 분해에너지를 가지므로 코팅 때 발생하는 전도도 및 투과율이 나빠지는 현상이 발생하지 않는 특징이 있으며, 위의 두 재료에 비해 밴드갭도 가장 낮아서 자외선 투과율이 낮다. 그러나 내습성이 약하기 때문에 이를 보완하기 위하여 내습성향상과 전도성 향상을 위해서 3족 원소인 B, In, Al, Ga 등을 도핑한 ZnO 투명전도막의 연구가 진행되고 있다. 이러한 원소들 중에서 Al로 도핑했을 때 가장 낮은 비저항을 얻을 수 있다고 알려져 있다. 본 연구에서는 SiOC 박막위에 AZO 박막을 제조하기 위하여 RF 마그네트론 스퍼터링법을 이용하여 박막을 성장시켰으며, 박막의 전기적 및 광학적 특성을 조사하였다. AZO 박막은 rf power가 5~200 W인 RF 마그네트론 스퍼터 방법에 의해서 제작되었다. SiOC 박막은 산소와 DMDMOS 전구체의 유량비를 다르게 하여 플라즈마 발생 화학적 기상 증착방법으로 증착되었다. 증착된 SiOC박막은 UV visible spectroscopy에 의해서 분석하였다. 투명전극의 비저항은 rf 전력이 작을 수록 낮았으며, SiOC 절연막 위에 AZO를 증착시킨 후 반사률은 반대로 바뀌는 것을 확인하였다.

• Polymer(Korea)
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• v.31 no.4
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• pp.308-314
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• 2007

A composite film of polyurethane(PU)-graft-poly(acrylic acid) (PAAc)/polyaniline (PU-g-AAc/PANI) was successfully fabricated for the purpose of adding conductivity on the surface of a general purpose polymer and improving adhesive property between the general purpose polymer and conducting polymer layer. The results from ATR-FTIR and XPS analyses also supported the successful synthesis of the composite film by showing characteristic peaks for every step. A low surface resistivity of $2{\times}10^3\;ohm/sq$ proved the surface conductivity of synthesized PU-g-AAc/PANI film and the surface resistance decreased with increasing the amount of grafted AAc, which acted as a dopant for PANI film.

• Journal of the Korean Institute of Gas
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• v.5 no.4 s.16
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• pp.21-26
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• 2001

Because of the continuous growth of energy consumption, and also tile tendency to site power lines and pipelines along the same routes, the close proximity of high voltage structures and metallic pipelines has become more and more frequent. Recently, the results of assessment about a system integrity are needed in korea also when a gas pipeline is running parallel with high voltage power line in same submarine tunnel, Therefore, we analyze the system integrity(AC corrosion of pipe, melting of pipeline coating, safety of insulation flange, especially cathodic protection system which are rectifier and CI(cathodic Isolator)) resulting from the influence of high voltage power system.

• Polymer(Korea)
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• v.31 no.6
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• pp.526-531
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• 2007

This paper reports the first results of a series of planarization film study for the stainless steel (SS) substrates for flexible displays. Diglycidyl ether of bisphenol A (DGEBA) and octa(dimethylsiloxypropylglycidylether) silsesquioxane (OG) were chosen for the organic and the hybrid epoxies respectively and diaminodiphenylmethane (DDM) was used as a curing agent at 1:2 stoichiometric ratio. These materials were spin-coated on SS substrates and thermal-cured. TGA study indicated that both the pristine and the cured OG were more thermally stable than DGEBA. AFM study showed that the smooth surfaces of $1{\sim}2\;nm$ roughness can be prepared for both DGEBA and OG when the films were thick ($>\;1\;{\mu}$). The electrical properties such as dielectric constant, capacitance and the leakage current with respect to the applied voltage were all stable even after the stress of $100\;V/100^{\circ}C$ was applied for $0{\sim}10000$ seconds indicating that the insulating properties of DGEBA and OG films were very reliable.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.1-5
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• 2004

A multi-layer flexible substrate is composed of copper(Cu)/polyimide that are known as good electrical conductivity, and low dielectric constant, respectively. In this study. conductor line of $5{\mu}m$-pitch was successfully fabricated without non-uniform pattern shape by electroplating copper and coating polyimide on patterned stainless steel. For multi-layer flexible substrate, via holes were drilled by UV laser and filled with electroplating copper and tin. And then, the PI layer with vias and conductor lines was stripped from stainless steel substrate. The PI layers were laminated at once with careful alignment between layers. Solid state reaction between tin and copper during lamination formed the intermetallic compounds of $Cu_6Sn_5$($\eta$-phase) and $Cu_3Sn$($\epsilon$-Phase) and achieved a complete inter-connection by vertically positioning the plugged via holes on via pad. The via formation process has several advantages; such as better electrical property and lower cost than V type via and paste via.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.177-183
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• 2014

Alumina-silica composite coating layers were prepared by electrophoretic deposition (EPD) of plate-shaped alumina particles dispersed in a sol-gel binder, which was prepared by hydrolysis and the condensation reaction of methyltrimethoxysilane in the presence of colloidal silica. The microstructure and the electrical and thermal properties of the coatings were compared according to the EPD process parameter: voltage, time and the content of the plate-shaped alumina particles. The electrical insulation property of the coatings was measured by a voltage test. The coatings were prepared by EPD of the sol-gel binder with 5-30 wt% plate alumina particles on parallel electrodes at a distance of 2 cm for 1-10 min under an applied voltage of 10-30 V. The coatings experienced increased breakdown voltage with increasing thickness. However, the higher the thickness was, the smaller the breakdown voltage strength was. A breakdown voltage as high as 4.6 kV was observed with a $400{\mu}m$ thickness, and a breakdown voltage strength as high as 27 kV/mm was achieved for the sample under a $100{\mu}m$ thickness.