• The Journal of the Petrological Society of Korea
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• v.20 no.2
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• pp.115-135
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• 2011

Fe-Ti ore bodies and mafic granulite occur in the Sancheong anorthosites, south Korea. In order to determine their petrogenetic relationship and to classify the Fe-Ti ore bodies, we have synthetically analyzed characteristics in the field, such as distribution and occurrence, and petrologic features through detailed outcrop sketches. The ore bodies are divided into the regular vein dike- and irregular veinlet swarm types, according to their characteristics of contact with the anorthosites and internal structures. The former shows the tabularly intrusive contact and the pervasively ductile-sheared interior, while the latter, the irregularly tortuous contact and the almost intact interior. Most of the ore bodies are cross-cutting the foliation of the anorthosites and possess abundant anorthositic xenoliths, indicating their intrusion after the formation of foliation in the anorthosites. The mafic granulite, also bearing abundant anorthositic xenoliths, shows interior foliations nearly parallel to intrusion contact, and has abundant ilmenites approximately the same as those of the Fe-Ti ore bodies in chemical composition. And its intrusion into adjacent anorthosites is observed and the intrusion is finally changed into an irregular veinlet swarm type ore body. It is, thus, interpreted that the granulite in the study area was the host material of Fe-Ti ore bodies.

• Journal of the Korean Chemical Society
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• v.53 no.3
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• pp.302-307
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• 2009

Investigation was conducted to examine whether photochemical reaction of N-(tributylstannyl)- methylphthalimide generates an azomethine ylide intermediate in its excited state as its silyl derivative N-(trimethylsilyl)methylphthalimide which has been observed to form an azomethine ylide. The irradiation of N-(tributylstannyl)methylphthalimide in $D_2O-CH_3$CN generates mono-deuterated N-methylphthalimide as an exclusive product which supports the efficient generation of azomethine ylide intermediate and its trapping by water molecule through a proto-destannylation pathway. However the generated tributylstannyl subsitiuted ylide was not observed to be trapped with a dipolarophile such as methyl acrylate and acrylonitrile present in the reactions which is in contrast with the ylide from N-(trimethylsilyl)methylphthalimide.

• Journal of Radiation Protection and Research
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• v.18 no.1
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• pp.53-61
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• 1993

The gamma-gamma coincidence measurements and angular correlation measurement associated with the electron capture of $^{75}Se$ have been carried to understand the structure for the odd nuclei $^{75}As$ with two HPGe detectors. As a result, we could determined the band structure of 5/2 state to be of 1/2 [310] band which is based on $f_{5/2}$ proton state. Also we obtained the multipole admixture in the state of 279.5keV by using the mixing ratios of $121.1{\sim}279.5keV$ cascade. Subsequently, it is determined that 25.56% electric quadrupole transition is involved in the state of 279.5keV.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.335-340
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• 2013

This paper is for the simulation design to enhance the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess and channel structures has been simulated and analyzed for the breakdown of the MHEMT devices. The fully removed recess structure at the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to almost 4 V as the saturation current at gate voltage of 0 V is reduced from 90 mA to 60 mA at drain voltage of 2 V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier and the $Si_3N_4$ passivation layers deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer and thus the impact ionization in the channel become smaller. In addition, the replaced InGaAs/InP composite channel with the same thickness in the same asymmetrically recessed structure increases the breakdown voltage to 5 V due to the smaller impact ionization and mobility of the InP layer at high drain voltage.

• The Korean Journal of Pesticide Science
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• v.4 no.2
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• pp.11-17
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• 2000

Optimum parameters were investigated for the simultanious analysis of 24 pesticide residuces using gas-liquid chromatography with electron capture detection. Electronic pressure control(EPC) on column enhanced resolution of 24 analyzes. Using DB-17, SPB-608, and Ultra-2 capillary column without EPC incomplete separation was observed in some pairs of pesticides. When EPC function was adopted, no severe overlapping was observed on SPB-608 column in every pesticides except vinclozolin/acetochlor pair. Total running time was 45 min, much shorter than $69{\sim}81$ min when used without EPC. Limit of determination of each analyze ranged $0.1{\sim}12.9$ ng/mL.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.41-41
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• 2008

제지산업은 다량의 용수를 사용하면서 또한 많은 양의 폐수를 배출하고 있다. 기존의 폐수처리 공정에서는 침전처리를 위한 큰 저수조와 오랜 침강 시간이 요구되어 제한된 공장 내에서의 처리에 어려움이 많다. 이러한 기존 기술의 문제점을 보완하면서도 새로운 고도처리가 가능한 초전도 마그네트를 이용한 자기분리 기술을 적용하고자 하였다. 자기문리의 기본 원리는 강력한 자기력에 의하여 액체에 포함된 자성입자를 분리해내는 것으로 자성입자들이 자계의 힘에 의하여 잡아당겨지고 포획됨으로서 제거되는 것이다. 자기분리용 솔레노이드 마그네트로 초전도마그네트를 적용하게 되면 아주 높은 고구배의 자장(HGMS; High Gradient Magnetic Separation) 을 발생시킬 수 있다. 초전도마그네트와 체(sieve) 형 자기필터를 이용하면 대공간에 전력손실 없이 고자장을 발생시킬 수 있기 때문에 미립자를 효과적으로 고속으로 분리하는 것이 가능해지며 또한 상자성 미세입자까지도 처리할 수 있다. 본 연구에서는 주로 유기물로 구성된 제지며|수의 부유물을 자성체와의 응집반응에 의해 플록을 형성하여 자성 플록의 자기분리 효과를 연구하였다. 자성응집반응의 특성을 평가하기 위하여 전자석 시스템을 제작하였으며 배치타입의 자기필터를 설계 제작하였다. 또한 응집제의 종류와 응집반응 공정에 따른 자성플록의 형성 정도를 조사하였으며 자기분리 후 폐수의 탁도, SS 등의 특성을 분석하였다. 그림 1은 자성응집반응의 특성을 평가하기 위하여 제작한 전자석 시스템을 나타내고 있으며 전자석의 자장해석 결과를 보이고 있다.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.1
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• pp.173-180
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• 2017

The albinism phenomenon of the East Sea is now in progress, and the area of the intensified bedrock has reached up to 61.7% of the whole bedrock area of the East Sea. The methods to eradicate the sea urchin that is known as the main cause of albinism and that influences huge damage on the selfish farm have been continuously studied but they have focused on the food using the sea urchin and recycling and the research on the recognition of the sea urchin has not been performed yet. Therefore, this study suggested the adaptive boundary detection to extract the characteristics of the sea urchin in order to catch the sea urchin in quantity that is the pirate of the sea, and it is believed to help the sea urchin recognition program a lot in the future.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.83-90
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• 1998

The effects of dopant activation anneal on GOI (Gate Oxide Integrity) of MOS capacitor with amorphous silicon gate electrode were investigated. It was found that the amorphous silicon gate electrode was crystallized and the dopant atoms were sufficiently activated by activation anneal. The mechanical stress of gate electrode that reveals large compressive stress in amorphous state, was released with increase of anneal temperature from $700^{\circ}C$ to 90$0^{\circ}C$. The resistivity of gate electrode polycrystalline silicon film is decreased by the increase of anneal temperature. The reliability of thin gate oxide and interface properties between oxide and silicon substrate greatly depends on the activation anneal temperature. The charge trapping characteristics as well as oxide reliability are improved by the anneal of 90$0^{\circ}C$ compare to that of $700^{\circ}C$ or 80$0^{\circ}C$. Especially, the lifetimes of the thin gate oxide estimated by TDDB method is 3$\times$10$^{10}$ for the case of $700^{\circ}C$ anneal, is significantly increased to 2$\times$10$^{12}$ for the case of 90$0^{\circ}C$ anneal. Finally, the interface trap density is reduced with relaxation of mechanical stress of gate electrode.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.13-18
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• 2007

This paper presents the experimental findings on the different degradation mechanism which depends on the gate oxide thickness in lateral DMOS transistors. For thin oxide devices, the generation of interface states in the channel region and the trapped holes in the drift region is found to be the causes of the device degradation. For thick devices, the generation of interface states in the channel region is found to be the causes of the device degradation. We confirmed the different degradation mechanism using device simulation. From the comparison of device degradation under DC and AC stress, it is found that the device degradation is more significant under DC stress than one under AC stress. The device degradation under AC stress is more significant in high frequency. Therefore the hot carrier induced degradation should be more carefully considered in the design of RF LDMOS transistors and circuit design.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.394-399
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• 2016

The silicon dioxide ($SiO_2$) was deposited using various gas as oxygen and nitrous oxide ($N_2O$) in nowadays. In order to improve electrical characteristics and the interface state density ($D_{it}$) in low temperature, It was deposited with carbon dioxide ($CO_2$) and silane ($SiH_4$) gas by inductively coupled plasma chemical vapor deposition (ICP-CVD). Each $D_{it}$ of $SiO_2$ using $CO_2$ and $N_2O$ gas was $1.30{\times}10^{10}cm^{-2}{\cdot}eV^{-1}$ and $3.31{\times}10^{10}cm^{-2}{\cdot}eV^{-1}$. It showed $SiO_2$ using $CO_2$ gas was about 2.55 times better than $N_2O$ gas. After 10 years when the thin film was applied to metal/insulator/semiconductor(MIS)-nonvolatile memory(NVM), MIS NVM using $SiO_2$($CO_2$) on tunneling layer had window memory of 2.16 V with 60% retention at bias voltage from +16 V to -19 V. However, MIS NVM applied $SiO_2$($N_2O$) to tunneling layer had 2.48 V with 61% retention at bias voltage from +20 V to -24 V. The results show $SiO_2$ using $CO_2$ decrease the $D_{it}$ and it improves the operating voltage.