• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.36-37
• /
• 2009

We have studied the effect of the hole transporting layers on the device efficiencies blue phosphorescent organic light emitting diodes (PHOLED) with of iridiumIIIbis4,6-di-fluorophenyl-pyridinato-N,C2picolinate (FIrpic) doped 3,5--N,N-dicarbazole-benzene (mCP) host. The highest efficiency of blue PHOLED is strongy dependent on the hole transporting materials, exhibiting the maximum current efficiency.

• Electrical & Electronic Materials
• /
• v.9 no.2
• /
• pp.152-158
• /
• 1996

Optical absorption and photoconductivity spectra of undoped and Co-doped Cd$_{4}$GeSe$_{6}$ single crystals, grown by the chemical transport reaction using iodine as a transporting agent, were investigated. At 20K, the optical energy gaps of the single crystals are 1.934eV for Cd$_{4}$GeSe$_{6}$ and 1.815eV for Cd$_{4}$GeSe$_{6}$ :Co$^{2+}$. The photoconductivity spectra of these single crystals were closely investigated over the temperature range 20-290K. At 20K, the photoconductivity peaks were located at 1.797eV, 1.347eV for Cd$_{4}$GeSe$_{6}$ and 1.815eV, I,.57eV, 1.46eV and 1.38eV for Cd$_{4}$GeSe$_{6}$ :Co$^{2+}$, respectively.ely.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.9 no.3
• /
• pp.203-212
• /
• 2004

The heat pipe for cooling power semiconductor is required no performance changing during the life cycle up to 20 years. For the long reliable performance of the heat pipe, my reasons that has possibility to generate non condensable gases we not allowed. In this research, the maximum heat transport rate and operation characteristics that are related to various geometric and thermal conditions are carried out. Also the test items, specifications and methods to guarantee the long life cycle of the heat pipe for power semiconductor cooling device are provided and the tests are performed.

• Proceedings of the KIEE Conference
• /
• 2006.10b
• /
• pp.159-162
• /
• 2006

In this paper energy distribution function in $SiH_4$ has been analysed over the E/N range 0.5${\sim}$300Td and Pressure value 0.5, 1.0, 2.5 Torr by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, diffusion coefficient, electron ionization, mean energy and the electron energy distribution function. The electron energy distribution function has been analysed in $SiH_4$ at E/N=30, 50Td for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values.

• Journal of the Korean Vacuum Society
• /
• v.1 no.2
• /
• pp.254-258
• /
• 1992

Iodine 화학수송법으로 성장한 Ni-doped CdGa2Se4와 undoped CdGa2Se4 단결정 의 PL 및 PLE 스펙트럼을 조사하였다. Undoped CdGa2Se4 단결정의 PL 스펙트럼에서는 전도대아래 준 연속적으로 분포된 electron trap과 deep level, 그리고 가전자대 위 0.07eV, 0.12eV에 있는 acceptor level 사이의 전자전이에 의한 2개의 emission band를 2.13eV와 1.20eV 영역에서 관측하였으며, Ni-doped 단결정에서는 Ni2+ 이온의 여기상태 3T1(3P)와 바 닥상태 3T1(3F) 사이의 전자전이에 의한 emission band를 1.48eV 영역에서 관측하였다. 이 러한 결과로부터 제안된 CdGa2Se4의 energy band model은 본 연구의 PL mechanism을 설명하는데 가능함을 보여주었다.

• Proceedings of the KIEE Conference
• /
• 1998.11c
• /
• pp.925-928
• /
• 1998

In this paper, the electron transport characteristics in $SiH_4$ has been analysed over the E/N range $0.5{\sim}300[Td]$ and Pressure value 0.5, 1, 2.5 [Torr] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity. diffusion coefficient, electron ionization, mean energy and the electron energy distribution function. The electron energy distribution function has been analysed in $SiH_4$ at E/N=30, 50[Td] for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Boltzmann equation and Monte carlo simulation have been compared with experimental data by Pollock, Ohmori, cottrell and Walker.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.05b
• /
• pp.42-46
• /
• 2000

${\beta}{\cdot}In_2S_3$ 및 ${\beta}{\cdot}In_2S_3:Co^{2+}$ 은 $In_2S_3$+S+ZnS를 출발물질로 하여 ($ZnCl_2+I_2$)를 수송매체로 사용한 chemical transport reaction method로 성장시켰다. 성장된 단결정은 tetragonal structure를 갖고 298K에서 indirect optical energy gap은 2.240eV, 1.814eV로 각각 주어졌고, direct optical energy gap은 2.639eV, 2.175eV로 각각 주어졌다. ${\beta}{\cdot}In_2S_3:Co^{2+}$ single crystal에서 impurity optical absorption peak가 나타났으며, 이들 peaks의 origin은 $Co^{2+}(Td)$ ion의 energy level 간의 electron transition임을 crystal field theory를 적용하여 규명하였다.

• Proceedings of the KIEE Conference
• /
• 1998.07e
• /
• pp.1752-1754
• /
• 1998

Recently the research about electron transport characteristic and energy distribute function in mixture gases within Helium, has been used and developed widely as industrial quality improvement of extinguish characteristic, electrical dielectric strength ability of application of each species high voltage apparatus, gas plasma etching progress of work to use manufacture of semiconductor, thin film molding by CVD, insulation film to use ultra LSI, etc. This paper analyze electron transport characteristic in the range E/N $1{\sim}60$[Td], pressure $0.1{\sim}6.0$[Torr] by MCS. It is necessary to seek electron drift velocity, diffusion coefficient, lonization coefficients, characteristic energy, mean energy and electron energy distribution function as electron transport characteristic.

• Proceedings of the KIEE Conference
• /
• 2005.10a
• /
• pp.97-100
• /
• 2005

This paper describes the electron transport characteristics in SiH4 has been analysed over the E/N range 0.5${\sim}$300[Td] and Pressure value 0.5, 1, 2.5 [Torr] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, diffusion coefficient, electron ionization, mean energy and the electron energy distribution function. The electron energy distribution function has been analysed in $SiH_4$ at E/N=30, 50[Td] for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Boltzmann equation and Monte carlo simulation have been compared with experimental data by Pollock, Ohmori, cottrell and Walker.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.529-532
• /
• 2003

In this paper, the discharge characteristics of silent discharge chamber with 2mm and 3mm gap spacings were investigated. Dielectric of $Al_2O_3$ was embedded in the cylindrical type of discharge chamber. It was known that V-I and P-V characteristics depend strongly on the charge transportation characteristics, and in the low frequency silent discharge mode of operation, discharge voltage was always sustained to Vd, irrespective of applied voltage.