• Journal of Korean Electronics
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• v.16 no.12
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• pp.42-49
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• 1996

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.6
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• pp.477-482
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• 2019

This study investigated the influence of the viscoelastic property of slag when producing glass fiber, MFS631 with 60% of manganese slag, 30% of steel slag, and 10% of silica stone. To fabricate the MFS631 glass bulk, slag materials were placed in an alumina crucible, melted at $1,550^{\circ}C$ for 2 h, and then annealed at $600^{\circ}C$ for 2 h. It was found that glass is non-crystalline through X-ray diffraction analysis. MFS631 fiber was produced at speed in the range of 100~300 rpm at $1,150^{\circ}C$. The loss modulus (G") and storage modulus (G') of the produced glass fiber were evaluated at high temperatures. G' and G" of MFS631 were greater than $893^{\circ}C$, and the modulus value was 136,860 pa. This is similar to the results of a general E-glass fiber graph. Therefore, it was concluded that its spinnability is similar to that of E-glass fiber; therefore, it can be commercialized.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.174-177
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• 2019

The traditional yttria-stabilized zirconia (YSZ) used in thermal barrier coatings has a limited operating temperature owing to densification and volume changes at high temperatures. A $(La_{1-x}Y_x)_2Zr_2O_7$ sintered compound was prepared by the co-precipitation and oxalate methods, by adding lanthanum zirconate to yttria. The thermal properties and crystallinity obtained by the two different methods were compared. Both methods yielded pyrochlore structures, and the oxalate method confirmed phases at low temperatures. The thermal conductivity of the sintered bulk prepared by co-precipitation was 0.93 W/mK, while that prepared by the oxalate method was 0.85 W/mK. These values are superior to that of 4YSZ at $1,000^{\circ}C$, which is widely used in industries.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.426-431
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• 2019

In this study, we report the effect of pre-treatment of alpha-$Ga_2O_3$ grown on a sapphire substrate by halide vapor phase epitaxy (HVPE). During the pre-treatment process, 10 sccm of GaCl gas was injected to the sapphire substrate at $470^{\circ}C$. The surface morphologies of the alpha-$Ga_2O_3$ layers grown with various pre-treatment time (3, 5, and 10 min) were flat and crack-free. The transmittance of the alpha-$Ga_2O_3$ epi-layers was measured to analyze their optical properties. The transmittance was over 80% within the range of visible light. The strain in the alpha-$Ga_2O_3$ grown with a pre-treat 5 min was measured, and was found to be close to the theoretical XRD peak position. This can be explained by the reduction of strain having caused a lattice mismatch between the alpha-$Ga_2O_3$ layer and sapphire substrate. The calculated dislocation density of the screw and edge were $2.5{\times}10^5cm^{-2}$ and $8.8{\times}10^9cm^{-2}$, respectively.

• Journal of the Korean institute of surface engineering
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• v.51 no.6
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• pp.387-392
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• 2018

Nanopatterning is one of the essential nanotechnologies to fabricate electronic and energy nanodevices. Therefore, many research group members made a lot of efforts to develop simple and useful nanopatterning methods to obtain highly ordered nanostructures with functionality. In this study, in order to achieve pattern formation of three-dimensional (3D) hierarchical nanostructures, we introduce a simple and useful patterning method (nano-transfer printing (n-TP) process) consisting of various linewidths for diverse materials. Pt and $WO_3$ hybrid line structures were successfully stacked on a flexible polyimide substrate as a multi-layered hybrid 3D pattern of Pt/WO3/Pt with line-widths of $1{\mu}m$, $1{\mu}m$ and 250 nm, respectively. This simple approach suggests how to fabricate multiscale hybrid nanostructures composed of multiple materials. In addition, functional hybrid nanostructures can be expected to be applicable to various next-generation electronic devices, such as nonvolatile memories and energy harvesters.

• Electrical & Electronic Materials
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• v.26 no.12
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• pp.21-28
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• 2013

• Electrical & Electronic Materials
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• v.23 no.5
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• pp.3-10
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• 2010

• Electrical & Electronic Materials
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• v.22 no.12
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• pp.3-10
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• 2009

• Electrical & Electronic Materials
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• v.34 no.4
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• pp.14-23
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• 2021

• Journal of the Korean institute of surface engineering
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• v.51 no.5
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• pp.257-262
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• 2018

Cesium lead halide perovskite quantum dots (QDs) have recently emerged as highly promising opto-electronic materials. Despite the relative facile anion exchange reactions in cesium lead halide perovskite QDs, in depth study of the anion exchange reactions such as reaction kinetics are required that can provide insight into the crystal transformation in the cesium lead halide perovskite QDs. Herein, we investigated the anion exchange reaction from $CsPbI_3$ QDs to $CsPbBr_3$ QDs with varying the particle size of the starting $CsPbI_3$ QDs. By characterizing the PL spectra in the anion exchange reaction process, we observed that discontinuous PL peak shifts during I-to-Br anion exchange reaction in starting $CsPbI_3$ QDs over a critical size. Origin of the discontinuous I-to-Br anion exchange kinetics are mainly due to thermodynamically unstable nature of the $CsPb(Br/I)_3$ alloy QDs.