• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.818-821
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• 2012

This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.825-828
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• 2012

This paper have analyzed the change of breakdown voltage for conduction path of double gate(DG) MOSFET. The low breakdown voltage among the short channel effects of DGMOSFET have become obstacles of device operation. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The change of breakdown voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.11
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• pp.2511-2516
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• 2012

This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.5
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• pp.1196-1202
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• 2013

This paper have analyzed the change of breakdown voltage for channel doping concentration and device parameters of double gate(DG) MOSFET using two dimensional potential model. The low breakdown voltage becomes the obstacle of power device operation, and breakdown voltage decreases seriously by the short channel effects derived from scaled down device in the case of DGMOSFET. The two dimensional analytical potential distribution derived from Poisson's equation have been used to analyze the breakdown voltage for device parameters such as channel length, channel thickness, gate oxide thickness and channel doping concentration. Resultly, we could observe the breakdown voltage has greatly influenced on device dimensional parameters as well as channel doping concentration, especially the shape of Gaussian function used as channel doping concentration.

• Journal of KIISE:Computer Systems and Theory
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• v.28 no.11
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• pp.561-572
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• 2001

Since energy consumption of CMOS circuits has a quadratic dependency on the supply voltage, lowering the supply voltage is the most effective way of reducing energy consumption. We propose an intra-task voltage scheduling algorithm for low-energy hard real-time applications. Based on a static timing analysis technique, the proposed algorithm controls the supply voltage within an individual task boundary. By fully exploiting all the slack times, as scheduled program by the proposed algorithm always complete its execution near the deadline, thus achieving a high energy reduction ratio. In order to validate the effectiveness of the proposed algorithm, we built a software tool that automatically converts a DVS-unaware program into an equivalent low-energy program. Experimental results show that the low-energy version of an MPEG-4 encoder/decoder (converted by the software tool) consumes less than 7~25% of the original program running on a fixed-voltage system with a power-down mode.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.726-728
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• 2012

In this paper, the threshold voltage characteristics have been analyzed by varying the channel thicknesses of Double Gate MOSFET. The channel thickness, as well as determining the size of the device which hardly affects SCE(Short Channel Effects), therefore the channel thicknesses is a very important parameter in the IC(Integrated circuit) design. In this study, using series charge distribution to analyze the threshold voltage on the channel thickness. Consequently, the threshold voltage decreases with increasing a channel thickness.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.5
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• pp.169-173
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• 2004

This paper presents the basic application idea of superconductor cable for voltage stability limited power system. In bulk power system, the transfer capability of transmission line is often limited by the voltage stability, and superconductor cable could be one of the countermeasure to enhance heat transfer limit as well as voltage stability limit. Steady state voltage stability approach by P-V curve is used to calculate the maximum transfer capability of initial system and superconductor applied system. IEEE-14 bus system is used to demonstrate its applicability.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.2
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• pp.148-154
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• 2008

The power transfer capability has been recently highlighted as a key issue in many utilities. The total transfer capability in the KEPCO power system is determined mainly by the voltage stability limit and an enormous number of contingencies should be analyzed to determine the total transfer capability. In this paper, a new ranking index for determining the total transfer capability from voltage stability point of view is presented. This index is applied to the practical system of KEPCO and the effects of ranking the contingencies are analyzed by use of PSS/E package and a developed IPLAN program.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.845-847
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• 2012

In this paper, the transport characteristics for doping concentration in the channel has been analyzed for DGMOSFET. The Possion equation is used to analytical. The DGMOSFET is extensively been studying because of advantages to be able to reduce the short channel effects(SCEs) to occur in conventional MOSFET. Since SCEs have been occurred in subthreshold region including threshold region, the analysis of transport characteristics in subthreshold region is very important. The threshold voltage roll-off and DIBL have been with various of doping concentration for DGMOSFET in this study.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.843-846
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• 2009

경부고속전철의 급전선에 의한 전력유도 대책을 위하여 건설 당시 정보통신부 고시에 의하여 시행되었다. 통신선에 장애를 유발할 수 있는 전자유도 대책을 위해서는 국가 기술기준에 의한 유도전압 한계치가 정해져 있고 현장 대책 상 이 제한치를 초과할 때에 필요한 것이므로 상기 정부 고시의 기술 근거에 의해 유도전압을 계산하여 조치하고 있다. 전기철도시스템에서 지역 구간상의 전력 공급을 위한 일정 거리마다 급전소가 시설되어 있어서 이로부터 전철에 전력이 공급되고 있다. 전철의 유도현상에 의한 유도전압 분포 분석을 위한 전국 구간 유도측정을 수행하여 급전구간에서의 유도전압 특성을 파악하였다. 구간 중심점상에서 낮아지는 전압에 대해 급전소 근접 구간에 이르렀을 때의 전압 상승 특성을 분석하였다. 급전소로부터 귀로되는 전류의 양이 집합됨으로 유도전압이 높아지고 거리가 멀어질수록 전압은 떨어진다. 유도대책을 전압 분석에 있어서와 차폐시설물의 연계 활용 시 이러한 전압의 영향성을 고려할 필요가 있다.