• The Transactions of the Korean Institute of Power Electronics
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• v.11 no.3
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• pp.209-215
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• 2006

Now, in this paper, going to present you with an Idea related to a new inverter of multi-step voltage source, that Is, the double-connected 12-step inverter with an auxiliary circuit. It possibly can be 24-step inverter with 3-phase voltage source which will enable us make full application even to medium and high power-level Motor drive, UPS, STATCOM, SVC, etc. in which the PWM method could not be employed. 24-step operation can be obtained from the link between the existing 12-step inverter and the additional auxiliary circuit in which the transformer of auxiliary circuit generates ripple voltage delivered to the inverter. Through a lot of experiments and simulations, (from which the validity of this scheme is confirmed,) we came to the conclusion that the increase of the primary winding number on transformer by 2N(N=1,2,3....) leads to the 12M-step(M=2,3,4...) inverter. The validity of the proposed scheme is confirmed by the simulated and experimental results.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.805-811
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• 2012

In this paper, movement of conduction path has been analyzed for electron distribution in the channel of double gate(DG) MOSFET. The analytical potential distribution model of Poisson equation, validated in previous researches, has been used to analyze transport characteristics. DGMOSFETs have the adventage to be able to reduce short channel effects due to improvement for controllability of current by two gate voltages. Since short channel effects have been occurred in subthreshold region including threshold region, the analysis of transport characteristics in subthreshold region is very important. Also transport characteristics have been influenced on the deviation of electron distribution and conduction path. In this study, the influence of electron distribution on conduction path has been analyzed according to intensity and distribution of doping and channel dimension.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.8
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• pp.30-35
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• 2006

Voltage is generally and exactly measured in the electric and electronic field. So, we studied method for detecting electric equipment faulty state using only electric voltage. It is called the Partition-FFT. Tracking is simulated by method and tester proceed on IEC 60112. We analyze voltage waveforms by tracking tester with Partition-FFT. As the result tracking process is clearly distinguished by 6 steps. Tracking is one of the major reason of electric accidents. The Partition-FFT is using a digital oscilloscope and a computer software. If Partition-FFT analysis is applied to the electricity facilities, We can prevent from happenning electric accidents cause of tacking breakdown with low prices and easy measurment. Most of all, Partition-FFT is system that make a visual tacking process. So, everyone is able to detect to possibility of electric accidents.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.3
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• pp.575-580
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• 2015

Asymmetric double gate(DG) MOSFET is a novel transistor to be able to reduce the short channel effects. This paper has analyzed a off current for conduction path of asymmetric DGMOSFET. The conduction path is a average distance from top gate the movement of carrier in channel happens, and a factor to change for oxide thickness of asymmetric DGMOSFET to be able to fabricate differently top and bottom gate oxide thickness, and influenced on off current for top gate voltage. As the conduction path is obtained and off current is calculated for top gate voltage, it is analyzed how conduction path influences on off current with parameters of oxide thickness and channel length. The analytical potential distribution of series form is derived from Poisson's equation to obtain off current. As a result, off current is greatly changed for conduction path, and we know threshold voltage and subthreshold swing are changed for this reasons.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.10
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• pp.70-78
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• 2009

This paper addresses the analysis and the design optimization of differential interconnects for high-speed Low-Voltage Differential Signaling (LVDS) applications. Thanks to the differential transmission and the low voltage swing, LVDS offers high data rates and improved noise immunity with significantly reduced power consumption in data communications, high-resolution display, and flat panel display. We present an improved model and new equations to reduce impedance mismatch and signal degradation in cascaded interconnects using optimization of interconnect design parameters such as trace width, trace height and trace space in differential printed circuit board (FPCB) transmission lines. We have carried out frequency-domain full-wave electromagnetic simulations, and time-domain transient simulations to evaluate the high-frequency characteristics of the differential FPCB interconnects. We believe that the proposed approach is very helpful to optimize high-speed differential FPCB interconnects for LVDS applications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.163-168
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• 2015

This paper analyzed the deviation of tunneling current for bottom gate voltage of sub-10 nm asymmetric double gate MOSFET. The asymmetric double gate MOSFET among multi gate MOSFET developed to reduce the short channel effects has the advantage to increase the facts to be able to control the channel current, compared with symmetric double gate MOSFET. The increase of off current is, however, inescapable if aymmetric double gate MOSFET has the channel length of sub-10 nm. The influence of tunneling current was investigated in this study as the portion of tunneling current for off current was calculated. The tunneling current was obtained by the WKB(Wentzel-Kramers-Brillouin) approximation and analytical potential distribution derived from Poisson equation. As a results, the tunneling current was greatly influenced by bottom gate voltage in sub-10 nm asymmetric double gate MOSFET. Especially it showed the great deviation for channel length, top and bottom gate oxide thickness, and channel thickness.

• Prospectives of Industrial Chemistry
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• v.24 no.5
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• pp.1-14
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• 2021

유무기 하이브리드 금속-할라이드계 페로브스카이트(organic-inorganic metal halide perovskite) 페로브스카이트 반도체 소재는 광전자 소자와 소재 연구에 새로운 연구 흐름을 만들고 있다. 태양전지 성능이 불과 과거 몇 년 사이의 짧은 연구 기간에도 불구하고, 광-전 변환 소자 중에서도 단일 소자와 적층 소자(tandem)에서 높은 광-전 변환 효율을 나타내기 때문이다. 이러한 급격한 연구 성과와 성장에도 불구하고, 페로브스카이트 소재의 다양한 광전자 특성의 평가와 결과에 대한 논의가 필요한 상황이다. 특히 내부 이온 이동이 광전자 원거리 이동 특성 평가와 해석에 영향을 주는 경우, 페로브스카이트 소재를 기반으로 한 다양한 광전자 소자의 성능 향상과 해석에 여전히 모호함을 준다. 달리 얘기하면, 이 소재의 기초 특성을 이해하고자 적용하는 다양한 기존 특성 평가 분석법의 활용과 해석에도 복잡한 영향을 미치고 있다고 할 수 있다. 이러한 페로브스카이트 소재 내에서 광전자 원거리 이동을 측정하는 새로운 방법을 소개하고자 한다. 첫 번째 방법으로, Quasi-steady 상태에서 광전도도를 전기적 특성으로 측정하고, 광조사 하에 투과 및 반사를 광학적으로 측정하여, 전도도와 광전자 밀도를 동시에 평가하는 방법으로, photo-induced transmission and reflection (PITR) 분광분석법이다. 이 분광분석법은 실제 소자의 구동조건을 구현한 상태에서 광전자의 원거리 이동에서 발생하는 광전자 밀도 변화를 반영한 광전자 이동도 특성 평가라는 장점을 가지고 있다. 두 번째 방법으로, 기존의 연속 전압 인가 방법 대신 펄스형 전압 인가 방식을 도입하는 방법으로, pulsed voltage space charge limited current (PV-SCLC) 분석법이다. 이는 펄스형 전압 인가 방법으로 이온의 이동을 최소화하여, 전류-전압 측정에서 히스테리시스가 없고 측정결과의 재현성과 신뢰도가 매우 높은 장점이 있다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.5
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• pp.60-67
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• 2007

In this paper, a simulation method of the internal winding fault is proposed to calculate winding current and electromagnetic force in a distribution power transformer by suing FEM program. The model of the transformer is a single phase, 60[Hz], 1[MVA], 22.9[kV]/220[V], cable-type winding. The short-circuit current and electromagnetic force are calculated by FEM(Finite Element Method) program(Flux2D) and the results we verified with theoretical formula and PSPICE program. The simulation results are fairly good agreement with the other verified methods within 5[%] error rate. The turn-to-turn short-circuit current is 500 times of the rated current and the electromagnetic force is about $20{\sim}200times$. The method presented in this study may serve as one of the useful tools in the electromagnetic force analysis of the transformer winding behavior under the short circuit condition for design of the structure.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.39 no.6
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• pp.513-518
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• 2015

Salinity gradient power (SGP) has attracted significant attention because of its high potential. In this study, we evaluate reverse electrodialysis (RED) with various compositions of available resources. The polarization curve (I-V characteristics) shows linear behavior, and therefore the power density curve has a parabolic shape. We measure the power density with varying compartment thicknesses and inlet flow rates. The gross power density increases with decreasing compartment thickness and increasing flow rate. The net power density, which is the gross power density minus the pumping power, has a maximum value at a compartment thickness of 0.2 mm and an inlet flow rate of 22.5 mL/min. The power density in RED is also evaluated with compositions of desalination brines, seawater, river water, wastewater, and brackish water. A maximum power density of $1.75W/m^2$ is obtained when brine discharged from forward osmosis (FO) and river water are used as the concentrated and the diluted solutions, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.8
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• pp.583-593
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• 2018

Lightning causes physical damage to aircraft, such as melting, burning and arcing, and magnetic field that occurs on the aircraft's outer body during the penetration of a lightning stroke causes voltage and current transients in the electronics and wiring within the aircraft. This effect will cause induced lightning strikes in the aircraft's internal airborne electronic systems, preventing safe flight. This paper introduces protection circuit design techniques, and the test results that meet the requirements for certification of criteria.