• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.114-121
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• 2001

A circuit model for active-controlled field emitter array(ACFEA) as an electron source of active-controlled field emission display(ACFED) has been proposed. The ACFEA with hydrogenated amorphous silicon thin-film transistor(a-Si:H TFT) and Spindt-type molibdenum tips (Spindt-Mo FEA) has been fabricated monolithically on the same glass. A-Si:H TFT is used as a control device of field emitters, resulting in stabilizing emission current and lowering driving voltage. The basic model parameters extracted from the electrical characteristics of the fabricated a-Si:H TFT and Spindt-Mo FEA were implemented into the ACFEA model with a circuit simulator SPICE. The accuracy of the equivalent circuit model was verified by comparing the simulated results with the measured one through DC analysis of the ACFEA. The transient analysis of the ACFEA showed that the gate capacitance of FEA along with the drivability of TFT strongly affected the response time. With the fabricated ACFEA, we obtained a response time of 15$mutextrm{s}$, which was enough to make 4bit/color gray scale with the pulse width modulation (PWM).

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.61-61
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• 1999

저항이 5$\Omega$-cm인 n-type Si(100) 웨이퍼를 실리콘 식각시 마스크로 사용하기 위하여 습식 열산화법을 이용하여 100$0^{\circ}C$에서 SiO2을 2400$\AA$ 성장시킨 후, OPCVD 공정을 통해 785$^{\circ}C$서 SiH2Cl2 가스 30sccm과 NH3가스 100sccm을 이용하여 Si3N4를 3000$\AA$ 증착시켰다. 이 웨이퍼를 포토-리쏘그라피 공정을 거쳐 지름 2$\mu\textrm{m}$의 포토레지스트 패턴을 제작한 후 600W의 RF power하에서 CF4 가스 10sccm, CHF3 가스 15sccm, O2가스 8sccm 및 Ar가스 10sccm을 이용하여 MERIE 방법으로 Si3N4를 식각한 다음, 7:1 BHF 용액내에서 30초간의 습식식각을 통해 40wt.%의 KOH 용액내에 8$0^{\circ}C$에서 30초간의 이방성 식각을 통해 피라미드 모양의 Si FEA(field emitter array)를 제작하였다. 본 실험은 다음과 같이 완성된 Si FEA를 샤프닝 산화 후 산화막 식각을 통해 마스크를 제거한 다음, tip의 열화학적 내구성을 증가시키고 장시간 구동시 안정성과 전계방출 전류밀도를 높이기 위해 tip의 표면에 Ti를 sputter 방법으로 약 300$\AA$ 증착시킨 후, RTA 장비를 이용하여 2단계 열처리 (first annealing:$600^{\circ}C$/30sec, second annealing : 85$0^{\circ}C$/15sec)를 통해 Si FEA의 경우보다 낮은 turn-on 전압과 높은 전계방출 특성을 나타낼 것으로 기대된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.313-313
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• 2011

최근, 산화물 반도체를 통한 나노선 연구가 활발히 진행되고 있다. 1차원 나노선은 넓은 표면적을 가지며 다양한 특성을 지녀 미래 nanodevice로의 중요한 building block 소자로의 활용이 가능하다. 본 연구에서는 이종의 나노선을 합성하여 hierarchical nanojunction structure를 제작, 특성을 확인하였다. 이러한 구조는 나노선이 가지는 넓은 표면적의 특성과 동시에, multi-component fuctional nanodevice를 구현하는데에 적합한 구조이다. 본 연구는 텅스텐 기판 위에 고온의 열증착 방식을 이용하여 텅스텐 산화물 나노선을 제작시켜 그 위에 저온의 수열합성을 통한 산화아연 나노선을 제작한 후 향상된 field emission emitter로서의 특성을 살펴보았다. 합성된 텅스텐 산화물 나노선은 quasi-allign된 구조를 가지며, 이러한 구조 위에 ZnO를 스퍼터링하여 seed layer를 형성시키고, 암모니아수와 아연염을 이용한 수열합성법을 통하여 합성된 나노선 위에 nanobranch의 산화아연 나노선을 형성하였다. 이러한 성장특성은 SEM, TEM을 통하여 확인하였고 각각의 특성과 계면을 살펴보았다. 또한 이러한 구조를 이용하여 전계방출특성을 확인하였는데, 약 5.7 eV의 일함수를 갖는 텅스텐 산화물 나노선 위에 더 작은 값의 일함수를 갖는 산화아연 나노선을 합성하여 전계방출특성을 보았으며, 더 향상된 결과를 얻을 수 있었다. 또한 산화아연의 합성방법에 따른 전계방출 특성의 차이도 비교하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.508-516
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• 1998

Mo-tip field emitter arrays(FEAs) were fabricated by conventional Spindt process and their life time characteristics and failure mode were evaluated. The fabricated Mo-tip FEA could generate at least $0.35\{mu} A/tip$ emission current for about 320 persistently under a constant gate bias of 140 V and was finally destroyed through self-healing mode. Thin diamond-like carbon films were coated on the M-tip by plasma-enhanced CVD and the dependence of emission properties upon the DLC thickness was investigated. By DLC coating, the turn-on voltage and emission current were appeared to be improved whereas the current fluctuation was increased in the DLC thickness range of $0~1,000\{AA}$.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.79-84
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• 2009

The electron emission source of triode type has been fabricated using CNT paste. The nano Ag particle and photosensitive polymers were added to the CNT paste. The surface roughness of the CNT emitter was uniform by the back exposure method. The added nano Ag particle improves the adhesion and the electric conductance with small variation in the CNTs and between electrode. After the aging with heat-exhausting, the reliability of the triode CNT electron source was secured in the high voltage and current operation for 12 hours. At this time, the gate leakage current was about 10 % less than.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.88-93
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• 1998

The fabrication process and emission characteristics of gated silicon field emitter arrays(FEAs) using chemical-mechanical-polishing (CMP) method are described. Novel fabrication techniques consisting of two-step dry etching with oxidation of silicon and CMP processes were developed for the formation of sharp tips and clear-cut edged gate electrodes, respectively. The gate height and aperture could be easily controlled by varying the polishing time and pressure in the CMP process. We obtained silicon FEAs having self-aligned and clear-cut edged gate electrode opening by eliminating the dishing problem during the CMP process with an oxide mask layer. The tip height of the finally fabricated FEAs was about 1.1 $\mu$m and the end radius of the tips was smaller than 100 $\AA$. The emission current meaured from the fabricated 2809 tips array was about 31 $\mu$A at a gate voltage of 80 V.

• ETRI Journal
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• v.7 no.2
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• pp.49-58
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• 1985

본 고는 교환기에서 방출되는 전계 및 자계의 허용 규제치와 외부에서 들어오는 전계 및 자계에 대해 교환기가 얼마나 정상적인 동작을 할 수 있는가를 규정하고 있는 피방해 감도(EMC), 교환기에 의한 EMI 및 주변장치에서 발생하는 전자계의 규제에 대해 서술하고 이에 따른 측정 방법을 제시한다.

• Journal of Sensor Science and Technology
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• v.5 no.2
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• pp.9-14
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• 1996

We have fabricated the vacuum magnetic sensor with a lateral field emitter arrays constructed on n-Si substrate, and investigated its magnetic characteristics. The device consists of 100 field-emitter tips with a $10{\mu}m$ pitch, gate, and split-anodes which are laterally structured. The electron-emission characteristics from the emitter followed the Fowler-Nordheim tunnelling theory. The sensor has good linear characteristics and high sensitivity of 825 %/T.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.426-430
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• 2000

We have studied the field emission characteristics of multi-layered diamond-like-carbon (DLC) films deposited by vertical electrodes type plasma enhanced chemical vapor deposition with CH$_4$ and H$_2$ mixture. We deposited a thin layer of DLC on the p$^{+}$-Si substrate and then turned off plasma before another deposition of a new DLC layer. The thickness and the number of DLC layers are varied. The emission characteristics of multi-layered DLC films were compared with conventional one. The multi-layered DLC film shows higher emission current than conventional one.e.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.295-300
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• 2000

Uniform silicon tip arrays were fabricated using the reactive ion etching followed by the reoxidation sharpening, and the effect of Pd-coated layer on electron emission characteristics was studied. The electron emission from Si field emitter arrays(FEAs) was a little, but improved by removing surface oxide on the FEA, but pronounced drastically by coating a $100-{\AA}-thick$ Pd metal layer. The turn-on voltage in the Pd-coated Si FEAs was reduced by 30 V in comparison with that in uncoated ones. This results from the increase of surface roughness at the tip apex by the Pd coating on Si FEA, via the decrease of the apex radius at which electrons are emitting. The Pd-coated emitters showed superior operating stability over a wide current range to that of the uncoated ones. This suggests that Pd coating enhances the high temperature stability and the surface inertness Si FEA.