• Title/Summary/Keyword: 전계방출

Search Result 406, Processing Time 0.029 seconds

Fabrication and Characterization of Lateral Vacuum Magnetic Sensor (수평 구조의 진공 자기 센서의 제작 및 특성)

  • Nam, Myung-Woo;Hong, Mee-Ran;Nam, Tae-Chul
    • Journal of Sensor Science and Technology
    • /
    • v.5 no.2
    • /
    • pp.9-14
    • /
    • 1996
  • We have fabricated the vacuum magnetic sensor with a lateral field emitter arrays constructed on n-Si substrate, and investigated its magnetic characteristics. The device consists of 100 field-emitter tips with a $10{\mu}m$ pitch, gate, and split-anodes which are laterally structured. The electron-emission characteristics from the emitter followed the Fowler-Nordheim tunnelling theory. The sensor has good linear characteristics and high sensitivity of 825 %/T.

  • PDF

Enhanced characteristics of Molybdenum field emission arrays under laser irradiation

  • 송병권;서도석;남창우;홍진표;김채옥;차승남;이항우;박남신;이내성
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2000.02a
    • /
    • pp.154-154
    • /
    • 2000
  • FED(Field emission display)의 FEAs(Field emitter arrays)에 형성되어 있는 micro-tip 은 tip 표면의 오염이나 진공내부의 잔류가스에 대단히 민감하다. 특히, emitter 물질의 일함수 및 겉모양 같은 기하학적 요소에 민감한 전계방출 소자의 특성상 tip 선단이 oxidation 될 경우 일함수가 증가하여 전자방출에 필요한 구동전압이 증가하고 전자 방출의 불균일성이 커지는 문제점이 발생한다. 이에 고진공의 동작 환경 및 FEAs 제작과정이나 공기의 노출에 발생하는 tip 표면의 오염물질 제거가 요구된다. 따라서 본 연구에서는 40$\times$40mm2 FEAs에 laser power, scan speed을 달리하며 laser(cw Nd-YAG, 1064nm)을 조사하였다. laser cleaning 효과를 보기 위해 laser irradiation 전, 후에 진공도 5$\times$10-7torr irradiation 후에 emitter tip의 뚜렷한 기하학적 모양의 변화를 볼 수는 없었지만, I-V 특성이 향상 되는 것을 볼 수 있었다.

  • PDF

The Effect of Pd Coating on Electron Emission from Silicon Field Emitter Arrays (Pd 코팅이 실리콘 전계 방출 어레이의 전자 방출에 미치는 영향)

  • Lee, Jong-Ram;O, Sang-Pyo;Han, Sang-Yun;Gang, Seung-Ryeol;Lee, Jin-Ho;Jo, Gyeong-Ik
    • Korean Journal of Materials Research
    • /
    • v.10 no.4
    • /
    • pp.295-300
    • /
    • 2000
  • Uniform silicon tip arrays were fabricated using the reactive ion etching followed by the reoxidation sharpening, and the effect of Pd-coated layer on electron emission characteristics was studied. The electron emission from Si field emitter arrays(FEAs) was a little, but improved by removing surface oxide on the FEA, but pronounced drastically by coating a $100-{\AA}-thick$ Pd metal layer. The turn-on voltage in the Pd-coated Si FEAs was reduced by 30 V in comparison with that in uncoated ones. This results from the increase of surface roughness at the tip apex by the Pd coating on Si FEA, via the decrease of the apex radius at which electrons are emitting. The Pd-coated emitters showed superior operating stability over a wide current range to that of the uncoated ones. This suggests that Pd coating enhances the high temperature stability and the surface inertness Si FEA.

  • PDF

Fabrication of New Co-Silicided Si Field Emitter Array with Long Term Stability (Co-실리사이드를 이용한 새로운 고내구성 실리콘 전계방출소자의 제작)

  • Chang, Gee-Keun;Kim, Min-Young;Jeong, Jin-Cheol
    • Korean Journal of Materials Research
    • /
    • v.10 no.4
    • /
    • pp.301-304
    • /
    • 2000
  • A new triode type Co-silicided Si FEA(field emitter array) was realized by Co-silicidation of Co coated Si FEA and its field emission properties were investigated. The field emission properties of the fabricated device through the unit pixel with $45{\times}45$ tip array in the area of $250{\mu\textrm{m}}{\times}250{\mu\textrm{m}}$ under high vacuum condition of $10^{-8}Torr$ were as follows : the turn-on voltage was about 35V and the anode current was about $1.2\mu\textrm{A}(0.6㎁/tip)$ at the bias of $V_A=500V\;and\; V_G=55V$. The fabricated device showed the stable electrical characteristics without degradation of field emission current for the long term operation except for the initial transient state. The low turn-on voltage and the high current stability of the Co-silicided Si FEA were due to the thermal and chemical stability and the low work function of silicide layer formed at the surface of Si tip.

  • PDF