• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.64-72
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• 1998

In this work, we have investigated the change of surface roughness, grain size and crystallinity of Poly-$Si_{1-x}Ge_x$ films deposited with the variation of deposition parameters (temperature, pressure, Ge composition ) and the effect of these results on the electrical resistivity. The crystallinity and the grain size were increased with increasing deposition temperature and Ge composition. Also, the electrical resistivity was decreased by enhanced grain size, while the surface roughness was increased. With increasing deposition pressure, the crystallinity was increased, but the grain size and the cluster size were decreased, by which the surface roughness was decreased. And the electrical resistivity was increased. Based on the effect of the crystallinity and the grain size on the electrical resistivity, it was founded that the electrical resistivity was depend on the grain size rather than the crystallinity.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.7
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• pp.601-605
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• 2014

Porous conductors are known to demonstrate excellent electrical, mechanical, and chemical resistance. These porous conductors demonstrated potential applications in various fields such as electrodes for supercapacitors, flexible heaters, catalytic electrodes, and sorbents. In this study, we described a pressure sensitive device using conductive and porous sponges. With an extremely simple "dipping and drying" process using a single-walled carbon nanotube (SWCNT) solution, we produced conductive sponges with sheet resistance of < $30k{\Omega}/sq$. These carbon nanotube sponges can be deformed into any shape elastically and repeatedly compressed to large strains without collapse. The pressure sensors developed from these sponges demonstrated high resistance change under pressure of up to a half of their initial resistance.

• Applied Chemistry for Engineering
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• v.9 no.1
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• pp.149-154
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• 1998

The characteristics of drag reduction and rheological behaviors were investigated using cationic surfactants, whose microstructures are known to change when concentration of the surfactant exceeds CMC. The firstly formed spherical micelles change to rodlike or disklike micelles because of packing between surfactants micells, and of thermodynamic perference. The drag reduction becomes significant when the concentration increases over this micellar transient point. Drag reductions were measured as a function of concentration, and rheological characteristics of the surfactant were further investigated to understand the correlation between their rheological properties and drag reduction. Micelles show the non-Newtonian behavior, and shear thickening behaviors were observed due to the structural development. In addition, structural developments were determined by adding the counter-ion in case of DOBON-G.

• Journal of the Korean Society for Nondestructive Testing
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• v.27 no.2
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• pp.115-123
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• 2007

For investigating self-diagnosis applicability, a method based on monitoring the changes in the electrical resistance of carbon fiber reinforced concrete has been tested. Then after examining change in the value of electrical resistance at each flexural weight-stage of carbon fiber in CFGFRP (carbon fiber and glass fiber reinforcing plastic) with new type rib and carbon sheet for concrete reinforcing, the correlations of electrical resistance and load as a function of strain, deflection were analyzed. As the results, it is clarified that when carbon fiber rod, rib and sheet fracture, the electrical resistance of it increase largely, and specially in case of CFGFRP, afterwards glass fiber tows can be resist the load due to the presence of the hybrid (carbon and glass) reinforced fiber. Therefore, it can be recognized that reinforcing bar and new type rib of CFGFRP and sheet of CF could be applied for self-diagnosis of fracture in reinforced FRP concrete.

• Journal of the Korea Concrete Institute
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• v.18 no.3 s.93
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• pp.439-445
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• 2006

For investigating self-diagnosis applicability, a method based on monitoring the changes in the electrical resistance of hybrid FRP(having electrical property) reinforced concrete has been tested. Then after examining change in the value of electrical resistance of carbon fiber in CFRP(non-hybrid type), CFGFRP and CFAFRP(hybrid type) before and after the occurrence of cracks and fracture in non-hybrid and hybrid FRP reinforced concrete at each flexural weight-stage, the correlations of each factors(the changes in electrical resistance and load as a function of strain, deflection) were analyzed. As the results, it is clarified that when the carbon fiber tows fracture, the electrical resistance of it increase largely, and afterwards hybrid FRP composites can be resist the load due to the presence of the reinforced fiber, for example, glass fiber or aramid fiber tows. Therefore, it can be recognized that hybrid FRP(including carbon fiber) reinforcing bar could be applied for self-diagnosis of fracture in reinforced FRP concrete fracture.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.32 no.2C
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• pp.37-47
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• 2012

In this study, three centrifuge tests were performed to evaluate the feasibility of three physical quantities for detecting internal defect of earth core fill dam: pore water pressure, temperature, and electrical resistance. For this purpose, the measurement system for pore water pressure, temperature and electrical resistance on centrifuge model dams was established. Three centrifuge tests included a fill dam without internal defect and two other dams with artificial internal defect in the core. The effectiveness of seepage monitoring was examined during the centrifuge test. Test results showed the applicability of monitoring techniques to detect internal defect by monitoring pore water pressure, temperature, and electrical resistance.

• Journal of the Korean Geotechnical Society
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• v.29 no.1
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• pp.121-133
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• 2013

This paper presents the results of an investigation into the pull-out capacity characteristics of screw anchor piles. Theoretical background of screw anchor pile (SAP) was first discussed. A series of reduced-scale model tests were performed on a number of cases with different SAP geometries such as pitch and diameter of screw as well as relative density of the model ground. The applicability of the pull-out capacity prediction equations were also examined based on the test results. It was shown that the pitch of screw has negligible effect on the pull-out capacity, while the diameter of screw has relatively large effect on pull-out capacity under a given condition. Practical implications of the findings from this study are discussed in great detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.307-307
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• 2014

정보화 시대로 접어들면서 동일한 공간에 더 많은 정보를 저장할 수 있고, 보다 빠른 동작이 가능한 비휘발성 메모리 소자에 대한 요구가 증가하고 있다. 하지만, 최근 비휘발성 메모리 소자 관련 연구보고에 따르면, 메모리 소자의 소형화 및 직접화 측면에서, 전하 저장을 기반으로 하는 기존의 Floating-Gate(FG) Flash 메모리는 20 nm 이하 공정에서 한계가 예측 되고 있다. 따라서, 이러한 FG Flash 메모리의 한계를 해결하기 위해, 기존에 FET 기반의 FG Flash 구조와 같은 3 terminal이 아닌, Diode와 같은 2 terminal로 동작이 가능한 ReRAM, PRAM, STT-MRAM, PoRAM 등 저항변화를 기반으로 하는 다양한 종류의 차세대 메모리 소자가 연구되고 있다. 그 중, 저항 변화 메모리(ReRAM)는 CMOS 공정 호환성, 3D 직접도, 낮은 소비전력과 빠른 동작 속도 등의 우수한 동작 특성을 가져 차세대 비휘발성 메모리로 주목을 받고 있다. 또한, 상하부 전극의 2 terminal 만으로 소자 구동이 가능하기 때문에 Passive Crossbar-Array(CBA)로 적용하여 플래시 메모리를 대체할 수 있는 유력한 차세대 메모리 소자이다. 하지만, 이를 현실화하기 위해서는 Passive CBA 구조에서 발생할 수 있는 Read Disturb 현상, 즉 Word-Line과 Bit-Line을 통해 선택된 소자를 제외하고 주변의 다른 소자를 통해 흐르는 Sneak Leakage Current(SLC)를 차단하여 소자의 메모리 State를 정확히 sensing하기 위한 연구가 선행 되어야 한다. 따라서, 현재 이러한 이슈를 해결하기 위해서, 많은 연구 그룹에서 Diodes, Threshold Switches와 같은 ReRAM에 Selector 소자를 추가하는 방법, 또는 Self-Rectifying 특성 및 CRS 특성을 보이는 ReRAM 구조를 제안 하여 SLC를 차단하고자 하는 연구가 시도 되고 있지만, 아직까지 기초연구 단계로서 아이디어에 대한 가능성 정도만 보고되고 있는 현실 이다. 이에 본 논문은 Passive CBA구조에서 발생하는 SLC를 해결하기 위한 새로운 아이디어로써, 본 연구 그룹에서 선행 연구로 확보된 안정적인 저항변화 물질인 SiN를 정류 특성을 가지는 n-Si/Ti 기반의 Schottky Diode와 결합함으로써 기존의 CBA 메모리의 Read 동작에서 발생하는 SLC를 차단 할 수 있는 1SD-1R 구조의 메모리 구조를 제작 하였으며, 본 연구 결과 기존에 문제가 되었던 SLC를 차단 할 수 있었다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.3 no.3
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• pp.165-169
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• 2002

Silicon wafer is very important accuracy make use semiconductor device substrate. In this research, for the uniformity dopant density distribution obtained to Neutron Transmutation Doping on make use Si in P Doping study work. In this research. we irradiated neutron on FZ silicon wafers which had high resistivity (1000~2000 ${\Omega}$cm), HANARO reactor was utilized resistivity changes due to observed, the generation of neutron irradiation on point defect analyzed, point defect on resistivity changes inquire into the effect. Before neutron irradiation theoretical due to calculated 5 ${\Omega}$-cm, 20.1 ${\Omega}$-cm for HTS hole and 5 ${\Omega}$-cm, 26.5 ${\Omega}$-cm, 32.5 ${\Omega}$-cm for IP3 hole. After neutron irradiation through SRP measurement the designed resistivities were approached, which were 2.1 H-cm for HTS-1, 7.21 ${\Omega}$-cm for HTS-2, 1.79 ${\Omega}$-cm for IP-1, 6.83 ${\Omega}$-cm for IP-2, 9.23 ${\Omega}$-cm for IP-3, respectively. Also after neutron irradiation resistivity changes due to thermal neutron dependent irradiation hole types free.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.2
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• pp.96-102
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• 2009

In this paper, the effects of the position and the angle of the potential probes on the measurements of the ground resistance with the fall-of-potential method are described and the testing techniques to minimize the measuring errors are proposed. The fall-of-potential method is theoretically based on the potential and current measuring principle and the measuring error is primarily caused by the position and angle of auxiliary probes. In order to analyze the relative error for measuring value of ground resistance due to the position of the potential probe, ground resistance were measured in case that the distance of current probe was fixed at 50[m] and the distance of potential probe was located from l0[m] to 50[m]. Also, the potential probe was located at 30[$^{\circ}$], 45[$^{\circ}$], 60[$^{\circ}$], 90[$^{\circ}$] and 180[$^{\circ}$]. As a consequence, relative error decreased with increasing the distance of potential probe and decreasing the angle between current probe and potential probe. The results could be help to determine the position of potential probe when the ground resistance was measured at grounding system.