Abstract
In this work, we have investigated the change of surface roughness, grain size and crystallinity of Poly-$Si_{1-x}Ge_x$ films deposited with the variation of deposition parameters (temperature, pressure, Ge composition ) and the effect of these results on the electrical resistivity. The crystallinity and the grain size were increased with increasing deposition temperature and Ge composition. Also, the electrical resistivity was decreased by enhanced grain size, while the surface roughness was increased. With increasing deposition pressure, the crystallinity was increased, but the grain size and the cluster size were decreased, by which the surface roughness was decreased. And the electrical resistivity was increased. Based on the effect of the crystallinity and the grain size on the electrical resistivity, it was founded that the electrical resistivity was depend on the grain size rather than the crystallinity.
증착변수(온도, 압력, Ge조성) 변화에 따라 증착된 다결정 $Si_{1-x}Ge_x$박막의 결정성 및 결정립크기 그리고 표면거칠기 변화와 이러한 결과들이 비저항에 미치는 영향에 대해 살펴보았다. 증착온도와 Ge조성이 증가함에 따라 결정화도와 결정립크기가 증가하였으며 증가된 결정립에 의해 비저항값은 감소하였으나 표면거칠기가 증가하였다. 한편 증착압력 증가에 따라 결정화도는 증가했으나 결정립크기와 cluster 크기가 감소하였는데 이러한 결정립과 cluster 크기 감소에 의해 표면거칠기가 감소하였다. 또한 증착압력 증가에 따라 결정화도와 비저항은 증가하였으나 결정립크기와 cluster 크기가 작아져 표면거칠기가 감소하였다. 결정화도와 결정립크기가 비저항에 미치는 영향을 볼 때, 결정화도 보다는 결정립크기가 비저항에 더욱 영향을 줌을 알 수 있었다.