• Journal of Navigation and Port Research
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• v.28 no.3
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• pp.213-219
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• 2004

In this paper, a LNA(Low Noise Amplifier) has been developed, which is operating at L-band i.e., 1452∼1492 MHz for satellite DAB(Digital Audio Brcadcasting) receiver. The LNA is designed to improve input and output reflection coefficient and VSWR(Voltage Standing Wave Ratio) by balanced amplifier. The LNA consists of low noise amplification stage and gain amplification stage, which make a using of GaAs FET ATF-10136 and VNA-25 respectively, and is fabricated by hybrid method. To supply most suitable voltage and current, active bias circuit is designed Active biasing offers the advantage that variations in $V_P$ and $I_{DSS}$ will not necessitate a change in either the source or drain resistor value for a given bias condition. The active bias network automatically sets $V_{gs}$ for the desired drain voltage and drain current. The LNA is fabricated on FR-4 substrate with RF circuit and bias circuit, and integrated in aluminum housing. As a reults, the characteristics of the LNA implemented more than 32 dB in gain. 0.2 dB in gain flatness. lower than 0.95 dB in noise figure, 1.28 and 1.43 each input and output VSWR, and -13 dBm in $P_{1dB}$.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.671-674
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• 1998

본 논문에서는 최근 급격히 수요가 증대하고 있는 휴대용 단말기의 수신기 선단에 사용되는 저잡음 증폭기(LNA)를 0.6㎛ CMOS공정 파라미터를 사용하여 설계하였다. 설계된 LNA는 전원 전압 ±1.2v, 900㎒대에서 동작하는 전류 재사용방식의 적층 CMOS구조로서 시뮬레이션 결과 전력소모가 9.45㎽, 전력이득은 23.7dB, 선형지수 OIP3는 7.6dBm을 나타내어 저전력 저잡음 특성을 얻었다. 사용된 인덕터의 Q는 3.5이다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.5
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• pp.796-805
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• 2000

A 30GHz band low noise amplifier module, which has linear gain of 30dB and noise figure of 2.6dB, for 30GHz satellite communication transponder was developed by use of MMIC and thin film MIC technologies. Two kinds of MMIC circuits were used for the low noise amplifier module, the first one is ultra low noise MMIC circuit and the other is wideband and high gain MMIC circuit. The pHEMT technology with 0.15$mu extrm{m}$ of gate length was applied for MMIC fabrication. Thin film microstrip lines on alumina substrate were used to interconnect two MMIC chips, and the thick film bias circuit board were developed to provide the stabilized DC bias. The input interface of the low noise amplifier module was designed with waveguide type to receive the signal from antenna directly, and the output port was adopted with K-type coaxial connector for interface with the frequency converter module behind the low noise amplifier module. Space qualified manufacturing processes were applied to manufacture and assemble the low noise amplifier module, and space qualification level of environment tests including thermal and vibration test were performed for it. The developed low noise amplifier was measured to show 30dB of minimum gain, $\pm$0.3dB of gain flatness, and 2.6dB of maximum noise figure over the desired operating frequency range from 30 to 31 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.8A
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• pp.1417-1427
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• 2001

본 논문에서는 밀리미터파를 이용하여 사용자에게 양방향 무선 멀티미디어의 구현을 가능케 하는 LMDS 송수신 모듈을 설계, 구현하였다. 제작된 LMDS 송수신 모듈은 신서사이져, 혼합기, 저잡음 증폭기, 고출력 증폭기, 듀플렉서 등으로 구성하였으며, 전체적으로는 전원부와 제어부를 통하여 이상여부를 감시하며, 송수신 모듈에 이상이 발생했을 때 이를 보호할 수 있도록 구현하였다. 여기서 DAVIC 표준에 맞도록 IF부 대역은 0.95∼1.45GHz의 500MHz 대역폭에서 동작하도록 제작하였고, 상하향 혼합기는 격리도 특성을 최대화하였으며, 이를 위해 하이브리드 링형을 이용한 다이오드 평형 구조를 적용하여 설계하였다. 혼합기로 주입되는 Local 주파수는 안정도가 높아야 함으로 유전체 공진형 발진기로 구현하였다. 또한 저잡음 증폭기와 고출력 증폭기는 정보통신부에서 공고한 3사 주파수 대역을 모두 수용할 수 있도록 24GHz∼26.5GHz의 대역에서 정상적인 동작을 할 수 있도록 설계하였으며, 특히 저잡음 증폭기는 잡음 환경에서 작은 신호를 손실 없이 얻을 수 있도록 잡음지수를 최소화하고, 30dB 이상의 충분한 이득이 구현되도록 하였다. 고출력 증폭기는 15dBm 이상의 출력을 송신하면서도 선형성에 문제가 없도록 혼변조왜곡(IMD) 특성을 고려하여 설계하였다. 그리고 듀플렉서는 우수한 주파수 선택도와 낮은 삽입손실 특성을 갖도록 송수신 필터 모두 5개의 공진기를 포함한 Chebyshev형 구조를 갖으며 생산성이 뛰어난 모노리딕형으로 구현하여, LMDS 송수신 성능을 구현하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.2 no.4
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• pp.635-641
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• 1998

This paper presents development of a small size LNA operating at 824 ∼ 849 MHz used for a receiver of a CELLULAR CDMA Base station and a transponder. Using resistive decoupling circuits, a signal at low frequency is dissipated by a resistor. This design method increases the stability of the LNA and is suitable for input stage matching. The LNA consists of low noise GaAs FET ATF-10136 and internally matched VNA-25. The LNA is fabricated with both the RF circuit and the self-bias circuits in aluminum housing. As a result, the characteristics of the LNA implemented here shows above 35dB in gain and below 0.9dB in noise figure, 18.6dBm P1dB power, a typical two tone IM3, -31.17dB with single carrier backed off 10dB from P1dB.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.11
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• pp.89-94
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• 2011

In this paper, we developed the W-band MMIC low noise amplifier for the millimeter-wave seeker using the tuner system. The MHEMT devices for MMIC LNA exhibited DC characteristics with a drain current density of 692mA/mm, an extrinsic transconductance of 726mS/mm. The current gain cutoff frequency(fT) and maximum oscillation frequency($f_{max}$) were 195GHz and 305GHz, respectively. The fabricated W-band low noise amplifier represented S21 gain of 7.42dB at 94 GHz and noise figure of 2.8dB at 94.2 GHz.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.9
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• pp.13-20
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• 1999

A 2-stage MMIC(monolithic Microwave Integrated Circuits) LNA(Low Noise Amplifiers) at 30GHz hand has been designed and fabricated for the Ka-band Satellite Communications. The $0.15 {\mu}m$ with the width of $80 {\mu}m$ pHEMT technology was used for the fabrication of this MMIC LNA. Using the series feedback technique, ultra low noise and excellent S11 could be obtained at the same time without the cost of gain at 30GHz-band. The stability factors(Ks) for each stage and overall stage are greater than 1 at full frequency bands by the bias circuits and stabilization circuit. The measured performances, which agree well with the predicted performances, show this 2-stage MMIC LNA has the gain of more than 15.7dB and noise figure of less than 2.09dB over 29GHz to 33GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.3
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• pp.569-577
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• 1999

A wideband RF receiver for satellite mobile communications system was fabricated and evaluated of performance in low noise amplifier and high gain amplifier. The low noise amplifier used to the resistive decoupling and self-bias circuits. The low noise amplifier is fabricated with both the RF circuits and the self-bias circuits. Using a INA-03184, the high gain amplifier consists of matched amplifier type. The active bias circuitry can be used to provide temperature stability without requiring the large voltage drop or relatively high-dissipated power needed with a bias stabilized resistor. The bandpass filter was used to reduce a spurious level. As a result, the characteristics of the receiver implemented here show more than 55 dB in gain, 50.83 dBc in a spurious level and less than 1.8 : 1 in input and output voltage standing wave ratio(VSWR), especially the carrier to noise ratio is a 43.15 dB/Hz at a 1 KHz from 1537.5 MHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.1
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• pp.166-172
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• 2001

A RF wideband receiver for INMARSAT-B satellite communications system was composed of low noise amplifier and high gain amplifier, The low noise amplifier used to the resistive decoupling circuit for input impedance matching and self-bias circuits for low noise. The high gain amplifier consists of matched amplifier type to improve receiver gain. The active bias circuit can be used to provide temperature stability without requiring the large voltage drop or relatively high-dissipated power needed with a bias stabilization resistor. The bandpass filter was used to reduce a spurious level. As a result, the characteristics of the receiver implemented here show more than 60 dB in gain and less than 1.8:1 in input and output voltage standing wave ratio(VSWR), especially the carrier to noise ratio which is input signal level -126.7 dB m at 1537.5 MHz is a 45.23 dB /Hz at a 1.02 kHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.1
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• pp.71-76
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• 2001

A Ka Band 3-stage MMIC (Monolithic Microwave Integrated Circuits) LNA (Low Noise Amplifiers) has been designed and fabricated far the Ka band satellite communications and BWLL(Broad Band Wireless Local Loop)system. The MMIC LNA consists of two single-ended type amplification stages and one balanced type amplification stage to satisfy noise figure, high gain and amplitude linearity. The 0.15${\mu}{\textrm}{m}$ pHEMT has been used to provide a ultra low noise figure and high gain amplification. Series and Shunt feedback circuits and λ/4 short lines were inserted to ensure high stability over the frequency range form DC to 80 GHz. The size of the MMIC LNA is 3.1mm$\times$2.4mm(7.44mm$^2$). The on wafer measured performance of the MMIC LNA, which agreed with the designed performance, showed the noise figure of less than 2.0 dB, and the gain of more than 26 dB, over frequency ranges from 22 GHz to 30 GHz.