• Journal of the Korean GEO-environmental Society
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• v.9 no.6
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• pp.61-70
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• 2008

In this study, undrained triaxial (CU) tests were performed on low-plastic silt of Nakdong River in order to investigate the undrained shear behavior of low-plastic silt. In experimental results, the deviator stress showed the hardening behavior after reaching its yield stress like the tendency of common sand, and the pore water pressure was gradually decreased to critical state after the maximum value. In the effective stress paths, regardless of consolidation stress or overconsolidation ratios, both a critical state line (CSL) and a phase transformation line (PTL) exist in the effective stress path that is similar to the case of sand. The behavior of low-plastic silt was predicted by the Modified Cam-Clay (MCC) model, the Jordan and the Elman-jordan model that is artificial neural network model. According to predicted results, the overall undrained shear behavior of low-plastic silt could not be predicted with the MCC model, but the Jordan and Elman-Jordan model showed well-matched experiment results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.7
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• pp.713-721
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• 2004

This paper presents a high Performance LNA based on InGaP/GaAs HBT for 5.4㎓ WAM band applications. During the past days, InGaP/GaAs HBT has been being used for mainly high power amplifiers, but InCaP/GaAs is recognized as a suitable device for RF single chip. At this point, the research about a high performance LNA based on InGaP/GaAs HBT must be preceded, and in this paper, a excellent linearity and noise characteristics LNA based on InGaP/GaAs HBT is desisted and fabricated. The LNA is integrated in new of 0.9${\times}$0.9$\textrm{mm}^2$ single chip with high Q spiral inductors and MIM capacitors. The proposed LNA is biased at current point for optimum noise figure and gain characteristics, futhermore, excellent linearity is achieved. The proposed LNA shows 13㏈ gain, 2.1㏈ noise figure, and excellent linearity in terms of IIP3 of 5.5㏈m.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.8
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• pp.285-291
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• 2013

In this paper, MOS-Capacitor and MOSFET devices with a Low Level Leakage Current of oxide thickness, channel width and length respectively were to investigate the reliability characterizations mechanism of ultra thin gate oxide films. These stress induced leakage current means leakage current caused by stress voltage. The low level leakage current in stress and transient current of thin silicon oxide films during and after low voltage has been studied from strss bias condition respectively. The stress channel currents through an oxide measured during application of constant gate voltage and the transient channel currents through the oxide measured after application of constant gate voltage. The study have been the determination of the physical processes taking place in the oxides during the low level leakage current in stress and transient current by stress bias and the use of the knowledge of the physical processes for driving operation reliability.

• Journal of the Korean earth science society
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• v.28 no.7
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• pp.947-956
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• 2007

In this article, the extratropical transition (ET) of tropical cyclone (TC) was investigated based on the case study covering the latest three TCs (Shanshaa Yaki, and Soulik) associated with ET evolution (onset and completion) using the objective 37 diagnostics of Evans and Hart (2003) and Hart (2003). At 500-hPa level, on an onset of ET, all three TCs entered the baroclinic zone. In a vertical cross-section analysis, three TCs before and at an onset of ET kept warm and humid throughout all levels around the TC center. However, these TCs after ET onset became relatively cold and dry over the western part of TC as the typical characteristics of ET concept model. Although our case study was not sufficient, it is concluded that the diagnostics of the ET onset and atmospheric structure change associated with Evans and Hart (2003) and Hart (2003) will be useful in ET operational forecast.

• Journal of the Korean earth science society
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• v.33 no.7
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• pp.583-595
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• 2012

The potential for tropical cyclogenesis in a given oceanic and atmospheric environments can be represented by genesis potential index (GPI). Using the 18 Coupled Model Inter Comparison Project phase 5 (CMIP5) models, the annual cycle of GPI and interannual variability of GPI are analyzed in this study. In comparison, the annual cycle of GPI calculated from reanalysis data is revisited. In particular, GPI differences between CMIP5 models and reanalysis data are compared, and the possible reasons for the GPI differences are discussed. ENSO (El Nino and Southern Oscillation) has a tropical phenomenon, which affects tropical cyclone genesis and its passages. Some dynamical interpretations of tropical cyclogenesis are suggested by using the fact that GPI is a function of four large-scale parameters. The GPI anomalies in El Nino or La Nina years are discussed and the most contributable factors are identified in this study. In addition, possible dynamics of tropical cyclogenesis in the Northern Hemisphere Pacific region are discussed using the large-scale factors.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.10a
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• pp.190-195
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• 2000

This paper presents the fabrication of the LNA which is operating at 2.13∼2.16 GHz for IMT-2000 lot-end receiver using series feedback and resistive decoupling circuit. Series feedback added to the source lead of a transistor keep the low noise characteristics and drop the input reflection coefficient of amplifier simultaneously. Also, it increases the stability of the LNA. Resistive decoupling circuit is suitable for input stage matching because a signal at low frequency is dissipated by a resistor in the matching network The amplifier consist of GaAs FET ATF-10136 for low noise stage and VNA-25 which is internally matched MMIC for high gain stage. The amplifier is fabricated with both the RF circuits and self bias circuit on the Teflon substrate with 3.5 permittivity. The measured results of the LNA which is fabricated using above design technique are presented more than 30 dB in gain P$\_$ldB/ 17 dB and less than 0.7 dB in noise figure, 1.5 in input$.$output SWR(Standing Wave Ratio).

• Journal of the Korean Chemical Society
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• v.27 no.1
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• pp.58-65
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• 1983

The mechanical properties (tensile strength, 100% modulus and hardness) of the urethane elastomers prepared from hydroxyl terminated polybutadiene (HTPB), several low molecular weight diols (ethylene glycol, 1, 3-propane diol, 1,4-butane diol, 1,5-pentane diol and 1,6-hexane diol) and two kinds of diisocyanates(TDI: toluene diisocyanate, IPDI: isophorone diisomechanical properties were enhanced for the increases of the concentrations of the urethane group, as predicted. In case of TDI, when the mechanical properties of the elastomers were plotted patterns were observed, which can be explained by hydrogen bondings depending on the number of the methylene carbons. But the mechanical properties of the elastomers derived from IPDI had decreasing curves against the number of methylene carbons in low molecular weight diols, without the characteristic zigzag patterns.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.9
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• pp.1045-1049
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• 2010

In this paper, we proposed an ultra-low power low noise amplifier(LNA) using a TSMC 0.18 ${\mu}m$ RF CMOS process. To satisfy the low power consumption with high gain, a current-reused technique is utilized. In addition, a low bias voltage in the subthreshold region is utilized to achieve ultra low power characteristic. The designed LNA has the voltage gain of 13.8 dB and noise figure(NF) of 3.4 dB at 2.4 GHz. The total power consumption of the designed LNA is only 0.63 mW from 0.9 V supply voltage and chip occupies $1.1\;mm{\times}0.8\;mm$ area.

• Journal of the Korean Institute of Navigation
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• v.25 no.1
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• pp.53-60
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• 2001

This paper presents the fabrication of the LNA which is operating at 2.13 ~ 2.16 GHz for IMT-2000 front-end receiver using series feedback and resistive decoupling circuit. Series feedback added to the source lead of a GaAs FET keeps the low noise characteristics and drops the input reflection coefficient of a low noise amplifier simultaneously. Also, it increases the stability of the LNA. Resistive decoupling circuit is suitable for input stage matching because a signal at low frequency is dissipated by a resistor in the matching network. The amplifier consists of GaAs FET ATF-10136 for low noise stage and VNA-25 which is internally matched MMIC for high gain stage. The amplifier is fabricated with both the RF circuits and self bias circuit on the Teflon substrate with 3.5 permittivity. The measured results of the LNA which is fabricated using the above design technique are presented more than 30 dB in gain, PldB 17 dB and less than 0.7 dB in noise figure, 1.5 in inputㆍoutput SWR(Standing Wave Ratio).

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.1
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• pp.156-163
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• 2012

The price stabilization policies which require the underwriters to maintain post-IPO prices at some level (stabilization duty) or give put-back options to investors, have survived for eight years until June, 2006. The purpose of this study is to analyze the effect of price stabilization policies upon IPO underpricing in KOSDAQ. The study decomposes the influence of the price stabilization policies on IPO underpricing into ex-ante and ex-post effect. The price stabilization policies have shown to increase the IPO underpricing both at ex-ante and ex post bases. And the ex-ante effect is greater than ex-post effect. Among policies, the price stabilization duty magnifies the underpricing more than put-back option. This study differentiate from the precedented studies by including the whole period in which those policies are in act and by decomposing the IPO underpricing effects into ex-ante and ex-post bases.