• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.243-243
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• 1999

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.191-191
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• 1997

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.180-181
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• 1998

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1364-1366
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• 1997

Planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.261-266
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• 1998

In developing the high density memory device, the etching of fine pattern is becoming increasingly important. Therefore, definition of ultra fine line and space pattern and minimization of damage and contamination are essential process. Also, the high density plasma in low operating pressure is necessary. The candidates of high density plasma sources are electron cyclotron resonance plasma, helicon wave plasma, helical resonator, and inductively coupled plasma. In this study, planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, flow rate, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.616-619
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• 2000

It is important to control the plasma characteristics for high quality plasma process. Recently, a novel method proposed by us, named as Enhanced-ICP, using periodic weak time-varying axial magnetic field added to a normal ICP source, has improved etch characteristics much. Variation of plasma characteristics according to the frequency of time-varying axial magnetic field have been measured and analyzed.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.438-440
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• 1995

The impedance characteristics and plasma parameters were experimentally studied in a weakly magnetized planar type, inductively coupled plasma (ICP) system. Compared with non-magnetized for system higher power transfer efficiency, stable impedance matching, enhancement of plasma density and higher electron temperature can be obtained. Such improvements are mainly due to the excitation of deeply penetrating electromagnetic wave and reduction of radial loss of electrons. In particulary, $SF_6$ (sulfur hexafluride) plasma shows unstable impedance matching in non-magnetized ICP because electronegativity of $SF_6$ effects on plasma characteristics. But, magnetized inductively coupled $SF_6$ plasma shows enough impedance matching stability to be applicable to the polysilicon etching in semiconductor process.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.323-325
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• 1995

An Inductively Coupled Plasma(ICP) was employed to prepare the Diamond-Like Carbon film with $CH_4$ gas. We observed the changes of mechanical, optical properties and internal stress of the films according to the variation of discharge power and negative-self bias. When weak magnetic field is applied, the properties of film are observed to change drastically. In magnetized case, the micro-hardness and the internal stress increase up to critical point and droped down in marked contrast to unmagnetized case. It suggests that large amount of ion flux exists due to high dissociation rate of the reactive radicals in plasma with magnetic field as reported elsewhere. As a result of FT-IR absorption measurement it could be confirmed that the $CH_x$ bonding and the micro-hardness and the internal stress decreased with the increase of negative-self bias.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.476-481
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• 1999

Characteristics of platinum dry etching were investigated in a cryogenic magnetized inductively coupled plasma (MICP). The problem with platinum etching is the redeposition of sputtered platinum on the sidewall. Because of the redeposits on the sidewall, the etching of patterned platinum structure produces feature sizes that exceed the original dimension of the PR size and the etch profile has needle-like shape [1]. The main object of this study was to investigate a new process technology for fence-free Pt etching As bias voltage increased, the height of fence was reduced. In cryogenic etching, the height of fence was reduced to 20% at-$190^{\circ}C$ compared with that of room temperature, however the etch profile was not still fence-free. In Ar/$SF_6$ Plasma, fence-free Pt etching was possible. As the ratio of $SF_6$ gas flow is more than 14% of total gas flow, the etch profile had no fence. Chemical reaction seemed to take place in the etch process.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.4
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• pp.203-209
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• 2000

This paper proposes the improvement of the etch rate of GaN using a magnetized inductively coupled $CH_4/H_2/Ar$plasma. The gradient magnetic field with the axial direction is investigated using Gauss-meter and the ion current density is measured using double Langmuir probe. The applied magnetic field changes the ion current density profile in the radial direction, resulting in producing the higher density in the outer region than in the center. GaN dry etching process is carried out based on the measurements of the ion current density. The each rate of 2000 /min is achieved with $CH_4/H_2/Ar$ chemistries at 800 W input power, 250W rf bias power, 10 mTorr pressure and 100 gauss magnetic field.