• Journal of Sensor Science and Technology
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• v.10 no.5
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• pp.292-303
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• 2001

This work reports the tunneling effects of the lateral field emitters. Tunneling effect is applicable to the VMFS(vacuum magnetic field sensors). VMFS uses the fact that the trajectory of the emitted electrons are curved by the magnetic field due to Lorentz force. Polysilicon was used as field emitters and anode materials. Thickness of the emitter and the anode were $2\;{\mu}m$, respectively. PSG(phospho-silicate-glass) was used as a sacrificial layer and it was etched by HF at a releasing step. Cantilevers were doped with $POCl_3(10^{20}cm^{-3})$. $2{\mu}m$-thick cantilevers were fabricated onto PSG($2{\mu}m$-thick). Sublimation drying method was used at releasing step to avoid stiction. Then, device was vacuum sealed. Device was fixed to a sodalime-glass #1 with silver paste and it was wire bonded. Glass #1 has a predefined hole and a sputtered silicon-film at backside. The front-side of the device was sealed with sodalime-glass #2 using the glass frit. After getter insertion via the hole, backside of the glass #1 was bonded electrostatically with the sodalime-glass #3 at $10^{-6}\;torr$. After sealing, getter was activated. Sealing was successful to operate the tunneling device. The packaged VMFS showed very small reduced emission current compared with the chamber test prior to sealing. The emission currents were changed when the magnetic field was induced. The sensitivity of the device was about 3%/T at about 1 Tesla magnetic field.

• Journal of the Korean Magnetics Society
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• v.24 no.4
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• pp.101-106
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• 2014

The glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(2.3 nm)/NiFe(3 nm)/IrMn(12 nm)/Ta(5.8 nm) GMR-SV (giantmagneto-resistance-spin valve) multilayer structure films with a magnetoresistance ratio (MR) of 5.0 % and a magnetic sensitivity (MS) of 1.5%/Oe was deposited by dc magnetron sputtering method. Also, GMR-SV device having a width of $7{\mu}m{\sim}8{\mu}m$ similar to the diameter of RBC (red blood cell) was fabricated by the light lithography process. When RBCs coupled with several magnetic beads with a diameter of $1{\mu}m$ dropped upon the GMR-SV device having MR = 1.06% and MS = 0.3 %/Oe, there is observed the variation of about included of a resistance value of ${\Delta}R=0.4{\Omega}$ and ${\Delta}MR=0.15%$ around a external magnetic field of -0.6 Oe. From these results, the GMR-SV device having the width magnitude of a few micron size can be applied as the biosensor for the analysis of a new magnetic property of hemoglobin inside of RBC combined to magnetic beads.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.189-195
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• 2001

We prepared TMR junctions of NiFe(170 )/CoFe(48 )/Al(13 )-O/CoFe(500 )/Ta(50 ) structure on 2.5$\times$2.5 $\textrm{cm}^2$ area Si/SiO$_2$ substrates in order to investigate the uniformity of magnetoresistance(MR) value using a ICP magnetron sputter. Each layer was deposited by the ICP magnetron sputter and tunnel barrier was formed by the plasma oxidation method. We measured MR ratio and resistance of TMR devices with four-terminal probe system by applying external magnetic field. Although we used ICP sputter which is known as superior to make uniform films, the standard variation of MR ratio was 2.72. The variation was not dependent on the TMR devices location of a substrate. We found that MR ratio and spin-flip field (H's) increased as the resistance increased, which may be caused by local interface irregularity of the insulating layer. The variation of resistance value was 64.19 and MR ratio was 2.72, respectively. Our results imply that to improve the insulating layer fabrication process including annealing process to lessen interface modulation in order to mass produce the TMR devices.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.196-202
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• 2000

Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P1)/Ru/CoFe(P2)/FeMn/Ta on Si(100) substrate with natural oxide were prepared by dc magnetron sputtering system, and investigated on the magnetoresistance properties and effective exchange bias field. As the thickness of FeMn increased above 150 $\AA$, MR ratio was decreased due to the current shunting effect. As the thickness of free layer decreased below 40$\AA$, MR ratio was reduced rapidly. In case of 40 $\AA$ thick of free layer, spin valve film with a structure Si(100)/Ta(50 $\AA$)/NiFe(27 $\AA$)/CoFe(13 $\AA$)/Cu(26 $\AA$)/CoFe(30 $\AA$)/Ru(7 $\AA$)/CoFe(15 $\AA$)/FeMn(100 $\AA$)/Ta(50 $\AA$) exhibited maximum MR ratio of 7.5 % and an effective exchange bias field of 600 Oe, respectively. Thickness difference dependence in this synthetic spin valve structure on effective exchange field was investigated and interpreted by the analytical method. It should be noted that thickness increase of CoFe(P 1) and decrease of CoFe(P2) in synthetic antiferromagnet leaded to the decrease in effective exchange bias field by experimentally and analytically.

• Journal of the Korean Magnetics Society
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• v.9 no.2
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• pp.111-120
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• 1999

The effects of annealing in rotating magnetic field after deposition on electromagnetic properties of $Co_{82}Zr_6Mo_{12}$ thin (200~1200 $\AA$) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity decreases, but $4{\pi}M_5$ does not change with increasing the film thickness. The coercivity of the films was decreased below 300 $^{\circ}C$ due to stress relief and decreasing the surface roughness, while increased at 400 $^{\circ}C$ due to partial grain growth. And then, $4{\rho}M_5$ was almost independent of annealing temperatures below 200 $^{\circ}C$, but increased from 7.4 kG to 8.0 kG at 300 $^{\circ}C$ and at 400 $^{\circ}C$, which was caused by precipitation and growth of fine Co particles in the films. The electrical resistivity of films was decreased with increasing annealing temperatures and the magnetoresistance was a negative value of nearly 0 $\mu$$\Omega$cm. After annealing at 300 $^{\circ}C$, maximum effective permeability was 1200 to the hard axis of the thin films according to high frequency change. Considering the practical application of biasing layers of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at 300 $^{\circ}C$ in 400 Oe rotating magnetic field.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.6
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• pp.294-302
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• 2023

Ni-Mn-Zn ferrite, Ni_0.5-xMn_xZn_0.5Fe₂O₄ (0 ≤ x ≤ 0.5), was synthesized using the sol-gel method to investigate the crystal structure, microstructure, magnetic properties, high-frequency characteristics, and electromagnetic (EM) wave absorption characteristics as a function of Mn substitution. As the Mn content increased, a continuous decrease in saturation magnetization (M_S) was observed with little change in coercivity (H_C). Samples for each composition (x) exhibited strong EM wave absorption performance with first and second strong EM wave absorption regions satisfying minimum reflection loss, RL_min < -40 dB in the 1.5~2.5, 6~11 GHz range, respectively. The EM wave absorption in Ni-Mn-Zn ferrite depends on magnetic loss, and adjusting µ' and µ'' spectra by Mn substitution or H field allows control of the EM wave absorption frequency.

• Journal of the Korean Society of Radiology
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• v.85 no.3
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• pp.607-617
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• 2024

Purpose Recent studies have demonstrated the usefulness of diffusion-weighted MR neurography (DW MRN) for assessing nerve roots. This study aimed to evaluate the utility of DW MRN with a unidirectional motion-probing gradient (MPG) for the lumbar nerve roots at 1.5T MR. Materials and Methods Sixty-four lumbar spine MRI scans with DW MRN using anteroposterior unidirectional MPG were retrospectively analyzed. Any changes in the 512 lumbar spinal nerve roots from L3 to S1 were evaluated using T2-weighted imaging (T2WI), contrast-enhanced T1-weighted imaging (CE T1WI), and DW MRN, with agreement and correlation analysis. Results T2WI revealed compression of 78 nerve roots, and CE T1WI revealed 52 instances of nerve root enhancement. Sixty-seven nerve roots showed swelling and hyperintensity on DW MRN. A total of 42 nerve roots showed changes in the CE T1WI and DW MRN sequences. Moderate to substantial agreement and moderate positive correlation were observed between DW MRN and CE T1WI, as well as DW MRN and T2WI (κ = 0.59-0.65, ρ = 0.600-0.653). Conclusion DW MRN with unidirectional anteroposterior MPG can help evaluate neuritisrelated changes in spinal nerve roots and could serve as a sequence capable of complementing or substituting gadolinium CE imaging.

• Proceedings of the Korean Fiber Society Conference
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• 2003.04a
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• pp.368-369
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• 2003

선진 복합재료의 매트릭스 수지로서 자장 많이 사용되고 있는 에폭시는 수지 및 경화제의 종류에 따라 여러 가지 물성을 나타낼 수 있다. 에폭시 수지는 기계적 물성 및 내화학성이 우수하고 경화시 수축변형이 적은 장점이 있으나 높은 가친밀도 때문에 순간적인 충격에 취약하다는 단점을 지니고 있다. 따라서 이러한 에폭시 수지의 취성 (brittleness)을 개선하기 위해 충격강도를 증가시킬 수 있는 강인화제를 혼합하여 경화시키는 방법이 사용되고 있다[1]. (중략)

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.18-19
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• 2002

1950년 Norman Ramsy는 시간적으로 분리된 두 진동 자장을 사용한 마이크로파 전이 방법을 개발했다 이 방법을 사용할 경우 그림1과 같이 넓은 선폭을 가지는 공진선 ("Rabi pedestal") 위에 좁은 선폭의 분광 신호("Ramsey fringe")를 얻을 수 있다. 램지 방법은 정밀한 분광 측정에 많이 사용되고 있으며, 특히 원자 시계를 구현하기 위한 기본 기술이 되고 있다. (중략)

• 전기의세계
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• v.30 no.7
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• pp.448-453
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• 1981

To solve alternating magnetic field problems, the program TDEDDY is developed with the use of the finite element method. Triangular finite elements of the first order are employed for the discretization of the field region. This program is constructed through an interactive system to check errors immediately when every routine is executed, and several subprograms are employed for the graphic representation of computed results. As an example, it is applied to a model of semi-infinite slab excited by an alternating current source. Results by the program TDEDDY show the satisfactory accuracy in comparision with those of analytic calculations.