• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.239-243
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• 1994

$NiFe/TbCo/Si_3N_4$ thin films were fabricated, which can be employed as dualOongitudinal and transverse) biased magnetoresistive elements utilizing surface magnetic exchange at the interface of NiFe/TbCo films. When Tb area percent was 36 % and substrate bias was not applied, magnetic exchange fields of 100~180 Oe were obtained. The thicknesses of NiFe, TbCo and $Si_3N_4$(Protective layer) were $470\;{\AA},\;2400\;{\AA}\;and\;600\;{\AA}$, respectively. Magnetoresistance ratio of 1.45 % was obtained using NiFe films fabricated with 1000 W power and 2.5 mTorr of Ar pressure. The MR ratio of microstructured elements was reduced to 1.31 % and the MR response curves were shown not to saturate due to demagnetizing fields of the elements. When elements were fabricated with $36^{\circ}$ of misalignment with respect to the exchange field direction using films having 150 Oe exchange field, MR response curve was shifted by 85 Oe, and the operating point of the device shifted to the linear region of the response. Also, the Barkhausen noise was eiminated due to longitudinal bias field originating from the exchange field.

• Journal of the Korean Magnetics Society
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• v.6 no.2
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• pp.112-116
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• 1996

스퍼터링법으로 제조한 NiFeCo/Cu/NiFeCo/FeMn 스핀밸브 자성 다층막의 자기적 성질과 자기저항에 대해 연구하였다. Cu 사잇층 두께가 15 .angs. 인 경우 약 6%의 자기저항을 얻을 수 있었다. NiFeCo/FeMn에서 교환이방성 자계는 약 20 Oe 정도였는데, 이는 NiFe/FeMn 계 스핀밸브 구조에서 보고된 값(100 Oe 이상) 보다 현저히 작은 것이다. 3 mTorr에서 제조한 NiFeCo 박막은 약 10 Oe 정도의 큰 보자력을 보임으로써 비슷한 조건에서 제조한 NiFe 박막의 경우(약 2 Oe)보다 상당히 큰 값을 갖는 것으로 관찰되었다. 작은 교환이방성 자계와 큰 보자력으로 인해 음 .rarw. 양 방향과 양 .rarw. 음 방향의 자화거동에 있어서 비대칭적인 자기저항 이력곡선 거동을 보이는 것으로 나타났다.

• Journal of the Korean Magnetics Society
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• v.12 no.6
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• pp.201-205
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• 2002

The tunneling magnetoresistance (TMR) of a ramp-edge type junction has been studied. The samples with a structure of NiO(60)/Co(10)/NiO(60)/Si$_3$N$_4$(2-6)/NiFe(10) (nm) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics was obtained from a ramp-type tunneling junctions having the dominant difference between zero and ＋90 Oe perpendicular to the junction edge line. The voltage dependence of TMR was stable up to a bias volt of $\pm$10 V with a TMR ratio of about -10%, which may be very peculiar magnetic tunneling properties with asymmetric tunneling process between wedge Co pinned layer and NiFe free layer.

• Journal of the Korean Magnetics Society
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• v.20 no.3
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• pp.94-99
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• 2010

Minor B-H loop measurement for a rectangular high tensile steel was obtained by using Labview. A ferrite cores of high permeance with primary and secondary windings on the steel plate were used to form a closed loop of magnetic flux. To compensate errors due to an extremely small gap between a pair of ferrite core, and between the ferrite core and the rectangular high tensile steel, quadratic function of least square method was used. Also a 3D FEM magnetic analysis tool was used to measure H and B of the steel. B-H loop of the high tensile steel plate can be measured up to 520 A/m of a magnetic field and 0.15 T of a magnetic flux density.

• Journal of the Korean Magnetics Society
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• v.7 no.6
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• pp.327-333
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• 1997

We designed and constructed the high frequency magnetic characteristics measurement system to measure core loss, B-H curve, permeability of toroidal ferrite core, amorphous core and various materials for high frequency application. The system consists of universal equipments such as digitizing oscilloscope, signal generator, power amplifier, PC in order to make upgrade easily. The power source is composed of waveform synthesizer and power amplifier ranging from DC to 20 MHz, and output signal H and B from sample core are digitized by oscilloscope with sampling rate 1 GS/ s per channel. Computer controls power source and oscilloscope, reads data from oscilloscope, displays analyzed waveform and saves data with file. The entire procedures finishes within few seconds.

• Journal of the Korean Magnetics Society
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• v.27 no.3
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• pp.82-86
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• 2017

The IrMn based GMR-SV films with three different buffer layers were prepared on Corning glass by using ion beam deposition and DC magnetron sputtering method. The major and minor magnetoresistance curves for three different buffer layers beneath the structure of NiFe(15 nm)/CoFe(5 nm)/Cu(2.5 nm)/CoFe(5 nm)/NiFe(7 nm)/IrMn(10 nm)/Ta(5 nm) at room temperature have shown different magnetoresistance properties. When the samples were annealed at $250^{\circ}C$ in vacuum, the magnetoresistance ratio, the coercivity of pinned ferromagnetic layer, and the interlayer coupling field of free ferromagnetic layer were enhanced while the exchange bias coupling field did not show noticeable changes.

• Journal of the Korean Magnetics Society
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• v.27 no.4
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• pp.115-122
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• 2017

The antiferromagnet IrMn based four different GMR-SV multilayers on Corning glass were prepared by using ion beam deposition and DC magnetron sputtering system. The magnetoresistance (MR) properties for single-type and dual-type GMR-SV multilayer films were investigated through the measured major and minor MR curves. The exchange bias coupling field ($H_{ex}$) and coercivity ($H_c$) of pinned layer, the $H_c$ and interlayer exchange coupling field ($H_{int}$) of free layer for the dual-type structure GMR-SV multilayer films consisted of top IrMn layer were 410 Oe, 60 Oe, 1.6 Oe, and 7.0 Oe, respectively. The minor MR curve of two free layers was performed the squarelike feature having a MR ratio of 8.7 % as the sum of 3.7 % and 5.0 %. The value of average magnetic field sensitivity (MS) was maintained at 2.0 %/Oe. Also, the magnetoresistance properties of the single-type and dual-type structure GMR-SV multilayer films consisted of bottom IrMn layer were decreased more than those of top IrMn layer. Two antiparallel states of magnetization spin arrays of the pinned and free layers in the dual-type GMR-SV multilayer films occurred the maximum MR value by the effect of spin dependence scattering.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.52-53
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• 2002

스핀밸브 구조는 현재 고기록밀도 자기저장 분야에서 그 응용범위가 넓다. 이런 고기록밀도를 달성하기 위해서는 자기저항곡선의 비대칭성 문제가 중요하다. 그러므로 비대칭성 문제를 해결하여 센서의 민감도를 높이기 위해서는 고정층에서 나오는 정자기장을 제어하는 것이 필요하다. 이런 문제를 해결하기 위해 IBM에서 최초로 합성형 스핀밸브 구조가 도입하였다 [1]. 이런 합성형 스핀밸브는 기존의 스핀밸브에 비해 열적으로나 또는 자기적으로 매우 안정한 장점을 가지고 있다. (중략)

• Journal of the Korean Magnetics Society
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• v.6 no.6
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• pp.411-416
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• 1996

We have studied the effect of a spin-dependence interface electron scattering on the giant magnetoresistance by adding a Fe magnetic material to the Co/Cu interfaces. The $Fe(50\;{\AA})/[Co(17\;{\AA})/Fe(t\;{\AA})/Cu(24\;{\AA})]_{20}$ multilayers are deposited on the Corning glass 2948 and 7059 substrates in a dc magnetron sputtering system. The magnetoresistance ratio is 22 % in the only Co/Cu multilayer, while it is increased to 26 % with inserted ultra thin Fe interface layer and reduced with increasing thickness of the Fe interface layer. It was investigated to the dependence of the magnetoresistance behaviors on annealing temperature. The magnetic properties of the multilayers were measured by vibrating sample magnetometer. Also, the structures and the surface roughness of samples were characterized by X-ray diffraction and atomic force microscope, respectively. The magnetoresistance ratio was increased to annealing temperature $300^{\circ}C$, but reduced at the temperature higher than $300^{\circ}C$ due to the interfacial diffuse.

• Journal of the Korean Magnetics Society
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• v.19 no.4
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• pp.133-137
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• 2009

$MnGeP_2$ thin films grown on GaAs exhibit room-temperature ferromagnetism with $T_C{\sim}$320 K, based on both magnetization and resistance measurements. The coercive fields at 5, 250, and 300 K are 3870, 1380 and 155 Oe, respectively. The anomalous Hall effect was observed, indicating spin polarization of the carriers. Hysteresis has been observed in both magnetoresistance and Hall measurements. The current-voltage characteristics of a $MnGeP_2$ film grown on an n-type GaAs substrate display semiconducting behavior.