• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.11
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• pp.9-18
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• 2003

Two configurations of Film Bulk Acoustic Wave Resonators with acoustic quater-wave bragg reflector layers are theoretically analyzed using equivalent circuits and the difference of their characteristics are discussed. We compare the characteristics of λ/2 mode to those of ideal FBAR with top and bottom electrode contacting air and the characteristics of λ/4 mode to those of ideal FBAR with top electrode contacting air and bottom electrode clamped. We assume that the piezoelectric film is ZnO, the electrode is A1 and the substrate is Si, ABCD parameters are extracted and input impedance is calculated by converting the equivalent circuit from Mason equivalent circuits to the simplified equivalent circuits that ABCD parameters are extracted possible, From the variation of resonance frequency due to the change of thickness of reflector layers and the variation of electrical Q due to the change of mechanical Q of reflector layers, it is confirmed that the reflector layer just under the bottom electrode have the greatest effect on the varation of resonance frequency and electrical Q. It is shown that the number of reflector layers required for the saturation of electrical Q decreases with the increase of the impedance ratio of reflector layers and electrical Q of λ/2 mode is larger than that of λ/4 mode, Electromechanical coupling factor is independent of the number of layers, The impedance ratio of reflector layers becomes larger as the electromechanical coupling factor becomes larger, The electromechanical coupling factor of the two mode are smaller than those of ideal FBARs because of the trapping of acoustic energy in the reflector layers, The insertion loss of the ladder filter decreases with the increase of the number of reflector layers but the bandwidth is not affected much by the number of reflector layers, As the impedance ratio of reflector layers becomes larger the insertion loss becomes smaller and the bandwidth becomes wider, In our analysis of the two mode, characteristics of λ/2 mode appear to be slightly more favorable than that of λ/4 mode

• Journal of KIISE:Software and Applications
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• v.26 no.10
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• pp.1143-1155
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• 1999

셀룰러 방식의 이동통신 시스템에서 전파의 유효신호 도달범위를 예측하기 위해서는 전파전파 모델을 이용한 예측기법이 주로 사용된다. 그러나, 전파과정에서 주변 지형지물에 의해 발생하는 전파손실은 매우 복잡한 비선형적인 특성을 가지며 수식으로는 정확한 표현이 불가능하다. 본 논문에서는 신경회로망의 함수 근사화 능력을 이용하여 전파손실 예측모델을 생성하는 방법을 제안한다. 즉, 전파손실을 송수신 안테나간의 거리, 송신안테나의 특성, 장애물 투과영향, 회절특성, 도로, 수면에 의한 영향 등과 같은 전파환경 변수들의 함수로 가정하고, 신경회로망 학습을 통하여 함수를 근사화한다. 전파환경 변수들이 신경회로망 입력으로 사용되기 위해서는 3차원 지형도와 벡터지도를 이용하여 전파의 반사, 회절, 산란 등의 물리적인 특성이 고려된 특징 추출을 통해 정량적인 수치들을 계산한다. 이와 같이 얻어진 훈련데이타를 이용한 신경회로망 학습을 통해 전파손실 모델을 완성한다. 이 모델을 이용하여 서울 도심 지역의 실제 서비스 환경에 대한 타 모델과의 비교실험결과를 통해 제안하는 모델의 우수성을 보인다.Abstract In cellular mobile communication systems, wave propagation models are used in most cases to predict cell coverage. The amount of propagation loss induced by the obstacles in the propagation path, however, is a highly non-linear function, which cannot be easily represented mathematically. In this paper, we introduce the method of producing propagation loss prediction models by function approximation using neural networks. In this method, we assume the propagation loss is a function of the relevant parameters such as the distance from the base station antenna, the specification of the transmitter antenna, obstacle profile, diffraction effect, road, and water effect. The values of these parameters are produced from the field measurement data, 3D digital terrain maps, and vector maps as its inputs by a feature extraction process, which takes into account the physical characteristics of electromagnetic waves such as reflection, diffraction and scattering. The values produced are used as the input to the neural network, which are then trained to become the propagation loss prediction model. In the experimental study, we obtain a considerable amount of improvement over COST-231 model in the prediction accuracy using this model.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.8
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• pp.688-693
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• 2009

In this paper, a half wave-length microstrip antenna was proposed to be able to continuously tune the resonant frequency in the stated area of UHF ISM band. By loading varactor diodes at both edges of the half wavelength antenna, where the electric field is the strongest, and varying the voltage in order to tune the electrical resonance length continuously, it is possible to automatically recover the resonant frequency and input impedance shifted by surrounding environment. When the microstrip antenna(center resonant frequency: 425 MHB) was tested, by adjusting the each voltages of varactor diodes from DC 0.6 to BC 3.0 volts, the resonant frequency under 20 dB return loss was varied 385 to 465 MHz. The peak gain was -0.2 dBd and return loss -10 dB bandwidth was 3.3 MHz(0.8 %).

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.8
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• pp.1465-1470
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• 2006

This paper presents a design of low power CMOS LNA(Low Noise Amplifier) for 2.4 GHz ZigBee applications that is a promising international standard for short area wireless communications. The proposed circuit has been designed using TSMC $0.18{\mu}m$ CMOS process technology and two stage cascade topology by current reuse technique. Two stage cascade amplifiers use the same bias current in the current reused stage which leads to the reduction of the power dissipation. LNA design procedures and the simulation results using ADS(Advanced Design System) are presented in this paper. Simulation results show that the LNA has a extremely low power dissipation of 1.38mW with a supply voltage of 1.0V. This is the lowest value among LNAs ever reported. The LNA also has a maximum gain of 13.38dB, input return loss of -20.37dB, output return loss of -22.48dB and minimum noise figure of 1.13dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.5
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• pp.430-433
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• 2017

This paper presents a S/C/X-band LNA MMIC with resistive feedback structure in 0.25 um GaN HEMT process. The GaN devices have advantages as a high output power device having high breakdown voltage, energy band gap and stability at high temperature. Since the receiver using the GaN device with high linearity can be implemented without a limiter, the noise figure of the receiver can be improved and the size of receiver module can be reduced. The proposed GaN LNA MMIC based on 0.25 um GaN HEMT device is achieved the gain of > 15 dB, the noise figure of < 3 dB, the input return loss of > 13 dB, and the output return loss of > 8 dB in the S/C/X-band. The current consumption of GaN LNA MMIC is 70 mA with the drain voltage 20 V and the gate voltage -3 V.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.259-262
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• 2006

This paper presents a design of low power CMOS LNA(Low Noise Amplifier) for 2.4 GHz ZigBee applications. The proposed circuit has been designed by using TSMC $0.18{\mu}m$ CMOS process and current-reused two-stage cascade topology. LNA design procedures and the simulation results using ADS(Advanced Design System) are presented in this paper. Simulation results shows that the LNA has a extremely low power dissipation of 1.38mW with a $V_{DD}$ of 1.0V. The LNA also has a maximum gain of 13.38dB, input return loss of -20.37dB, output return loss of -22.48dB and noise figure of 1.13dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.4
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• pp.449-456
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• 2012

Herein, we design a wideband $8{\times}8$ waveguide Butler matrix in order to use in a multi-port amplifiers(MPAs) at Ka-band. To achieve the broadband characteristic, we design a binomial 6-slot 3 dB directional coupler which is used to configure the $8{\times}8$ Butler matrix. The measured results of the fabricated $8{\times}8$ Butler matrix have low insertion loss of less than 0.3 dB, good return loss of over 26 dB and high isolation of over 35 dB within the design bandwidth of 3 GHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.453-456
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• 2009

In this paper, a Microstrip antenna for wireless LAN is designed in HyperLAN 5GHz. The IEEE 802.11a have allocated HyperLAN band. We proposed CPW-fed antenna structure for compact antenna. This structure shows that a ground plane and a patch plane are existed at one layer. The proposed antenna is designed on FR-4 substrate with a relative dielectric constant 4.3, thickness of 1.5mm and tangent loss 0.02. The designed antenna shows that VSWR is below 2 and has good return loss below -10dB over the 5.725~5.825GHz bandwidth with HyperLAN.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.567-568
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• 2008

In this paper, we proposed the design on LNA for $3{\sim}5\;GHz$ frequency with Using $0.18{\mu}m$CMOS technology. The LNA gain is 12-15 dB, and noise figure is lower than 5 dB and Input/output matching is lower than 10 dB in frequency range from 3 GHz to 5 GHz. The topology, which common source output of cascode is reduced noise figure and improved gain. Input common gate amplifier extend LNA's bandwidth.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.6
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• pp.605-612
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• 2011

In this paper, we designed detachable T-DMB receiver antenna on the windshield of the car. Designed antenna is composed of only copper and feeders. To escape completely from driver's sight, it exists edging of windshield. Proposed antenna by considering body of properties and characteristics of the antenna input impedance have T-DMB frequency band(174~216 MHz). Proposed flexible antenna with Common Mode Stub is satisfied characteristics less than -5 dB antenna input return loss regardless of installation position on windshield.