• Electrical & Electronic Materials
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• v.8 no.5
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• pp.611-618
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• 1995

The (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$+0.6[mol%]Nb$_{2}$O$_{5}$ (0.05.leq.x.leq.0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[.deg. C] in a reducing atmosphere(N$_{2}$ gas). Metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100 [.deg. C] for 2 hours. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 106 [Hz], it move to low frequency with increasing resistivity of grain. The specimens showed three kinds of conduction mechanisms in the temperature range 25-125 [.deg. C] as the current increased: the region I below 200 [V/cm] shows the ohmic conduction. The region rt between 200 [V/cm] and 2000 [V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000 [V/cm] is dominated by the tunneling effect.fect.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.640-647
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• 1995

In this study, the BaTiO$\sub$3/ capacitor add to MnO$\sub$2/ like depressor and shifter were investigated for temperature or voltage compensation by structural and electrical analysis. The relative density of BCTM, generating poly crystall and formation of lattice defect, has a 90[%] over as the CaTiO$\sub$3/ come out to control grain size. The current density of BCTM2 increased non-ohmic in high-electric field but that BCTM3 and BCTM4 had a few changing. The BCTM3 and BCTM4 unformated grain boundary shown temperature compensation properties, so that the dielectric constant was low value. The curie point was near 140[.deg. C] in BCTM1 and BCTM4, but BCTM3 and BCTM4 not shown the curie point. It is found that the charging energy of BCTM4 was changed 6[%] according to rising temperature from room temperature to 417[K]. The formation of BaMnO$\sub$3/ was low dielectric constant to change frequency and temperature.

• Korean Journal of Materials Research
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• v.6 no.11
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• pp.1136-1145
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• 1996

Ai-8wt.5(Ti+Zr)합금을 기계적합금화와 열간압출로 제조하여 Ti에 대한 Zr 첨가비와 등온열처리가 고온인장강도 및 변형거동에 미치는 영향에 대하여 조사하였다. Ti에 대한 Zr 첨가량의 비가 증가함에 따라 열간압출 시편의 상온 및 고온강도가 증가하였고, 40$0^{\circ}C$ 및 51$0^{\circ}C$에서 등온열처리에 따른 강도의 감소도 작게 나타났다. 이는 Zr 첨가량이 증가함에 따라 AI 기지와 AI3Ti에 비해 작은 격자간불일치도를 갖는 AI3(Ti+Zr)금속간화합물이 생성되고 고온열처리에 따른 조대화가 억제되었기 때문으로 판단되었다. 합금의 연성은 Zr 첨가량과 등온열처리에 관계없이 10% 이하로 낮게 나타났으며 인장 시험 온도가 고온일수록 취성파괴인 입계파괴가 지배적으로 일어났다. AI-Ti-Zr 합금의 변형에 필요한 활성화에너지는 순수한 AI 기지의 자기확산에 필요한 활성화에너지 142KJ/mol에 비해 573-783K 온도범위에서 1.5-1.8배 높은 값을 보였으며, Ti에 대한 Zr의 첨가량의 비가 증가할수록 보다 높은 값을 나타내었다.

• Korean Journal of Materials Research
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• v.6 no.4
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• pp.436-445
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• 1996

비정질 실리콘박막의 고상결정화 특성에 대한 비정질 박막의 증착방법, 수소화 정도, 표면결정 활성화 에너지 변화 및 열처리 환경 영향을 X선 회절, EDAX, Raman 분광 분석으로 조사하였다. 저온(58$0^{\circ}C$)열처리 corning 시료에서 기판 barium(Ba), aluminum(AI) 성분의 막내 확산 임계열처리시간 및 확산에 기인 한 불안정 결정화 특성을 관찰하였다. 화학기상증착 석영 수소화 시료에서 hard damage 기계적 활성화 효과로 얻어진 조대결정립 결정화 특성을 X선 회절의 (111) 배향 상대강도 변화로 관찰 할 수 있었으며, 이는 활성화 효과에 의한 고상 결정화 시 핵생성과 성장속도변화로 다결정 실리콘의 전기적물성 향상 가능성을 보여주었다. Soft damage, bare 활성화 처리 수소화막의 결정화는 비정질 상의 혼재, 박막 응력등의 저품위 입계특성 및 미세결정립 성장 특성으로 관찰되었으나, 활성화 전처리에 의한 저온 및 고온(875$^{\circ}C$)단시간(30분) 결정화는 확인 되었다. 스퍼터링 비수소화 막의 결정화는 상변태 상태의 Raman 결정피크로 분석 되었으며, 결정화 거동에 선행막의 스퍼터링 및 비수소화 영향은 활성화효과에 관계없이 불완전 저품위 결정특성으로 확인되었다. AFM 표면형상은 3차원 island 성막특성을 보여주었고 표면거칠기정도는 높은 것으로 관찰되었다.

• Proceedings of the Korean Nuclear Society Conference
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• 1997.05b
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• pp.201-206
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• 1997

본 연구에서는 Ni-기 합금인 합금 600과 합금 690, Fe-기 합금인 합금 800 및 초내식성 오스테나이트계 스테인리스강인 SR-50A에 대하여 부식 환경의 변화에 따른 특성 평가를 행하였다. 전기화학적 부식 평가는 양극 분극 시험을 통하여 행하였으며 부식 환경은 NaCl, HCI, NaOH(+$Na_2$SO$_4$) 액이었다. 응력 부식 균열 시험으로는 CERT(Constant Extension Rate Test)를 행하였으며 부식환경은 40%NaOH, 40%OH+12%$Na_2$SO$_4$ 용액이었다. CERT시험 후 그 파면을 SEM관찰하여 파괴 양상을 관찰하였다. 각 합금의 양극 분극 특성을 부식 환경에 따라 평가한 결과, 부식 용액의 증류에 따라 서로 다른 분극 거동을 보이고 있는데 산성과 중성 용액에서는 SR-50A가 가장 큰 저항성을 보이는 반면, 강 알카리용액인 NaOH용액에서는 Ni-기 합금의 저항성이 Fe-기 합금의 저항성보다 우수하게 나타났다. 응력 부식 균열 저항성은 전반적으로 Fe-기 합금보다 Ni-기 합금이 우수하게 나타났다. 파단면을 SEM관찰한 결과 합금 800과 SR-50A(tube)는 용액에 관계없이 입내 파괴 모드를 나타내고 있으며, 합금 600과 SR-50A판재는 입계 파괴 양상을 보이고 있다. 또한 가성 용액 중에 $Na_2$SO$_4$를 첨가할 경우, 부식 속도를 가속화시키고 응력 부식 균열 저항성을 감소시키고 있다.

• Korean Journal of Materials Research
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• v.29 no.4
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• pp.264-270
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• 2019

As a case study on aspect ratio behavior, Kaolin, zeolite, $TiO_2$, pozzolan and diatomaceous earth minerals are investigated using wet milling with 0.3 pai media. The grinding process using small media of 0.3 pai is suitable for current work processing applications. Primary particles with average particle size distribution D50, ${\sim}6{\mu}m$ are shifted to submicron size, D50 ${\sim}0.6{\mu}m$, after grinding. Grinding of particles is characterized by various size parameters such as sphericity as geometric shape, equivalent diameter, and average particle size distribution. Herein, we systematically provide an overview of factors affecting the primary particle size reduction. Energy consumption for grinding is determined using classical grinding laws, including Rittinger's and Kick's laws. Submicron size is obtained at maximum frictional shear stress. Alterations in properties of wettability, heat resistance, thermal conductivity, and adhesion increase with increasing particle surface area. In the comparison of the aspect ratio of the submicron powder, the air heat conductivity and the total heat release amount increase 68 % and 2 times, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.209-212
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• 1995

In this paper, the $(Sr_{0.85}{\cdot}Ca_{0.15})TiO_3$ of paraelectric grain boundary layer (GBL) ceramics were fabricated. The characteristics of electrical conduction and the thermally stimulated current(TSC) were measured respectively. The region I below 200[V/cm] shows the ohmic conduction, the region II between 200[V/cm] and 1000[V/cm] can be explained by the Pool-Frenkel emission theory, and the region III above 2000[V/cm] is dominated by the tunneling effect. As a result, The origins of these peaks are that the ${\alpha}$ peak observed at $-20[^{\circ}C]$ looks like to be ascribed to the ionization excitation from donor level in the grain, and the ${\alpha}^{\prime}$ peak observed at $-20[^{\circ}C]$ appears to show up by detrap of the trapped carrier of border between the oxidation layer and the grain, and the ${\beta}$ peak observed at $80[^{\circ}C]$ seems to be resulted from hopping conduction of existing carrier in the trap site of the border between the oxidation and second phase.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.6
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• pp.269-275
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• 2005

Ni/Ni-aluminide/Ti/Ti-aluminide laminate composite, considered as a functionally gradient material, was manufactured by thin foil hot press technique. Thick intermetallic layers of NiAl and $TiAl_3$ were formed by a self-propagating high-temperature synthesis (SHS) reaction, and thin continuous taters of $Ni_3Al$ and TiAl were formed by a solid-state diffusion. Fracture resistance with loading along the crack arrester direction is higher than crack divider direction due to the interruption of crack growth in metal layers. The $Ni_3Al$ and NiAl intermetallic layer showed cleavage and intergranular fracture behavior, respectively, while the fracture mode of $TiAl_3$ layer was found to be an intragranular cleavage. The debonding between metal and intermetallic layer and the pores were observed in the Ni/Ni-aluminide layers, resulting in the lower fracture resistance. With the results of acoustic emission (AE) source characterization the real time of failure and the effect of AE to crack growth could be monitored.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.962-968
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• 2011

In this study, we investigated the effects of Mn dopant (0.1~3.0 at% $Mn_3O_4$ sintered at 1000$^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and grain boundary properties of ZnO, ZM(0.1~3.0) using admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). As a result, three kinds of defect were found below the conduction band edge of ZnO as 0.09~0.14 eV (attractive coulombic center), 0.22~25 eV ($Zn^{{\cdot}{\cdot}}_i$), and 0.32~0.33 eV ($V^{\cdot}_o$). The oxygen vacancy increased with Mn doping. In ZM, an electrically single grain boundary as double Schottky barrier was formed with 0.82~1.0 eV of activation energies by IS & MS. We also find out that the barriers of grain boundary of Mn-doped ZnO (${\alpha}$-factor=0.13) were more stabilized and homogenized with temperature compared to pure ZnO.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.969-976
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• 2011

In this study we aims to evaluate the effects of 1/3 mol% $Co_3O_4$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0, and 0.5) system (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. In addition of $Co_3O_4$ in $ZnO-Bi_2O_3-Sb_2O_3$ (ZBSCo), the phase development, density, and microstructure were controlled by Sb/Bi ratio. Pyrochlore on cooling was reproduced in all systems. The more homogeneous microstructure was obtained in ZBSCo (Sb/Bi=1.0) system. In ZBSCo, the varistor characteristics were improved drastically (non-linear coefficient ${\alpha}$=23~50) compared to ZBS. Doping of $Co_3O_4$ to ZBS seemed to form $V^{\cdot}_o$(0.33 eV) as dominant defect. From IS & MS, especially the grain boundary of Sb/Bi=0.5 system is composed of electrically single barrier (0.93 eV) and somewhat sensitive to ambient oxygen with temperature.