• Title/Summary/Keyword: 임 프린팅

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Pressure Distribution by Rubber Roller in Large-area UV Imprinting Lithography Process (대면적 UV 임프린팅 공정에서 고무 롤러에 의한 압력분포)

  • Kim, Nam-Woong;Kim, Kug-Weon;Lee, Woo-Young
    • Journal of the Semiconductor & Display Technology
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    • v.9 no.2
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    • pp.91-96
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    • 2010
  • In recent years there have been considerable attentions on nanoimprint lithography (NIL) by the display device and semiconductor industry due to its potential abilities that enable cost-effective and high-throughput nanofabrication. Although one of the current major research trends of NIL is large-area patterning, the technical difficulties to keep the uniformity of the residual layer become severer as the imprinting area increases more and more. In this paper we consider the roll-to-plate type imprinting process. In the process a glass mold, which is placed upon the 2nd generation TFT-LCD glass sized substrate(370${\yen}$470 mm), is rolled by a rubber roller to achieve a uniform residual layer. The pressure distribution on the glass mold by rolling of the rubber roller is crucial information to analyze mold deformation, transferred pattern quality, uniformity of residual layer and so forth. In this paper the quantitative pressure distribution induced by rolling of the rubber roller was calculated with finite element analysis under the assumption of Neo-Hookean hyperelastic constitutive relation. Additionally the numerical results were verified by the experiments.

Hot Imprinted Hierarchical Micro/Nano Structures on Aluminum Alloy Surfaces (고온 임프린팅을 통한 알루미늄합금 표면의 마이크로/나노 구조 성형 기술)

  • Moon, I.Y.;Lee, H.W.;Oh, Y.S.;Kim, S.J.;Kim, J.H.;Kang, S.H.
    • Transactions of Materials Processing
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    • v.28 no.5
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    • pp.239-246
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    • 2019
  • Various surface texturing techniques have been studied because of the effective applicability of micro or nano scale surface patterns. Particularly, the most promising types of patterns include the hierarchical patterns, which consists of micro/nano structures. Different processes such as MEMS, laser machining, micro cutting and micro grinding have been applied in the production of hierarchical patterns on various material surfaces. This study demonstrates the process of hot imprinting to induce the hierarchical patterns on the Al alloy surfaces. Wire electrical discharge machining (WEDM) process was used to imprint molds with micro scale sinusoidal pattern. In addition, the sinusoidal pattern with rough surface morphology was obtained as a result of the discharge craters. Consequently, the hierarchical patterns consisting of the sinusoidal pattern and the discharge craters were prepared on the imprinting mold surface. Hot imprinting process for the Al plates was conducted on the prepared mold, and the replication performance was analyzed. As a result, it was confirmed that the hierarchical patterns of the mold were effectively duplicated on the surface of Al plate.

A Study on the Changes in Surface Properties According to Post-treatment of SLA 3D Printing Materials (SLA 3D 프린팅 소재의 후처리에 따른 표면특성 변화 연구)

  • Bae, Seo Jun;Im, Do Jin
    • Korean Chemical Engineering Research
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    • v.60 no.1
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    • pp.132-138
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    • 2022
  • In this study, a basic study was performed to systematically compare the changes in surface properties according to the post-processing method of the stereolithography (SLA) printing method, which is a photocuring 3D printing method, and to provide information on the post-processing method suitable for the application. Although it was possible to improve some of the transparency of the SLA-type output by regularly changing the irregular microstructure of the surface through polishing, it was difficult to secure sufficient transparency like glass. The change in contact angle characteristics due to grinding showed a tendency to slightly increase as the grinding time increased and the particle size of the sandpaper used was small, but the variation between samples was large and the average contact angle was 77~90°, showing no statistically significant difference. Surface treatment methods other than polishing were tried, and it was confirmed that it was possible to easily and simply improve the transparency by applying a commercially available vehicle scratch remover or silicone oil. In addition, a method for securing high transparency such as glass by using a scratch remover after sequential grinding while reducing the particle size of the sandpaper was proposed. Finally, even after surface treatment through polishing and various methods, it was difficult to secure a contact angle of 90° or more.

Fabrication of Transparent Electrode Film for Organic Photovoltaic using Ag grid and Conductive Polymer (Ag grid와 전도성 고분자를 이용한 인쇄기반 OPV용 투명전극 형성)

  • Yu, Jongsu;Kim, Jungsu;Yoon, Sungman;Kim, Dongsoo;Kim, Dojin;Jo, Jeongdai
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.116.1-116.1
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    • 2011
  • Materials with a combination of high electrical conductivity and optical transparency are important components of many electronic and optoelectronic devices such as liquid crystal displays, solar cells, and light emitting diodes. In this study, to fabricate a low-resistance and high optical transparent electrode film for organic photovoltaic, the following steps were performed: the design and manufacture of an electroforming stamp mold, the fabrication of thermal roll imprinted (TRI) poly-carbonate (PC) patterned films, the manufacture of high-conductivity and low-resistance Ag paste which was filled into patterned PC film using a doctor blade process and then coated with a thin film layer of conductive polymer by a spin coating process. As a result of these imprinting processes the PC films obtained a line width of $10{\pm}0.5{\mu}m$, a channel length of $500{\pm}2{\mu}m$, and a pattern depth of $7.34{\pm}0.5{\mu}m$. After the Ag paste was used to fill part of the patterned film with conductive polymer coating, the following parameters were obtained: a sheet resistance of $9.65{\Omega}$/sq, optical transparency values were 83.69 % at a wavelength of 550 nm.

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UV 나노임프린트 리소그래피의 Quartz 기판상의 Resin mold 제거를 위한 Hybrid 세정공정에 관한 연구

  • Jo, Yun-Sik;Kim, Min-Su;Gang, Bong-Gyun;Kim, Jae-Gwan;Lee, Byeong-Gyu;Park, Jin-Gu
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.81.1-81.1
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    • 2012
  • 나노임프린트 리소그라피(Nano-Imprint Lithography, NIL) 기술은 기판위의 resin을 나노구조물이 각인된 스탬프로 눌러서 나노구조물을 형성하는 기술로, 경제적이고 효과적으로 나노구조물을 제작할 수 있는 기술이다. 그중에서도 UV 기반의 나노임프린트(UV-NIL) 기술은 resin을 투명한 스탬프로 누른뒤 UV로 경화시켜 나노구조물을 형성하는 기술로써 고온, 고압($140{\sim}180^{\circ}C$, 10~30bar)이 필요한 가열식 나노임프린트 기술에 비해 상온, 상압($20^{\circ}C$, 1bar)에서도 구조물 형성이 가능하여 다층구조 형성에 적합하다. 연속적인 임프린팅 공정에 의해 resin이 quarz 스탬프에 잔류하여 패터닝에 결함을 유발하게 되므로 오염물을 제거하기 위한 세정공정이 필요하다. 하지만 UV에 의해 경화된 resin은 cross-linking을 형성하여 화학적인 내성이 증가하게 되므로 제거하기가 어렵다. 현재는 resin 제거를 위한 세정공정으로 SPM($H_2SO_4/H_2O_2$) 세정이 사용되고 있는데 세정시간이 길고 세정 후에 입자 또는 황 잔유물이 남으며 많은 유해용액 사용의 문제점이 있어 효과적으로 resin을 제거할 세정공정이 필요한 상황이다. 본 연구에서는 친환경적인 UV 세정 및 오존수 세정공정을 적용하여 경화된 resin을 제거하는 연구를 진행하였다. 실험샘플은 약 100nm 두께의 resin을 증착한 $1.5cm{\times}1.5cm$ $SiO_2$ 쿠폰 wafer를 사용하였으며, UV 및 오존수의 처리시간을 달리하여 resin 제거효율을 평가하였다. ATR-FTIR 장비를 사용하여 시간에 따른 resin의 두께를 측정한 결과, UV 세정으로 100nm 높이의 resin중에 80nm의 bulk resin이 단시간에 제거가 되었고 나머지 20nm의 resin thin film은 오존수 세정으로 쉽게 제거되는 것을 확인 하였다. 또한 표면에 남은 resin residue와 particle을 제거하기 위해서 SC-1 세정을 진행하였고 contact angle과 optical microscope 장비를 사용하여 resin이 모두 제거된 것을 확인하였다.

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A Study on the Design of the Source Driver and the Flexible Display with an Electrowetting Cell Structure (전기습윤셀 구조를 갖는 플렉서블 디스플레이와 소스 드라이버 설계에 관한 연구)

  • Kim, Hoon-Hak
    • Journal of the Korea Society of Computer and Information
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    • v.17 no.9
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    • pp.149-156
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    • 2012
  • The Fabric Electrode was proposed for the effective production of the display based on electrowetting in this paper and designed the source driver of flexible display which could be driven by the electrowetting cell. The electrowetting cell matrix was implemented on the substrate(PET) by imprinting. The driver fabric, wetting electrode fabric and conductive fabric was placed horizontally and vertically in the groove between cell matrix and the electrowetting cell matrix can be driven by the cross-point as electric connection. The integration density of driver module is decreased because using the R/2R DAC module per channel in the conventional method. The proposed method could utilize the effective production process and reduce the production price of a display panel. The source driver which consume lower power and can increase the integration density because of reducing the number of driver device per channel was designed and evaluate the driver operation by the simulation using the VHDL programming in this paper.

Enhancing Production Rate of Emulsion via Parallelization of Flow-Focusing Generators (유동-집속 생성기의 병렬화를 통한 에멀젼 생산속도 향상)

  • Jeong, Heon-Ho
    • Korean Chemical Engineering Research
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    • v.56 no.5
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    • pp.761-766
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    • 2018
  • Droplet-based microfluidic device has led to transformational new approaches in various applications including materials synthesis and high-throughput screening. However, efforts are required to enhance the production rate to industrial scale because of low production rate in a single droplet generator. In here, we present a method for enhancing production rate of monodisperse droplets via parallelization of flow-focusing generators. For this, we fabricated a three-dimensional monolithic elastomer device (3D MED) that has the 3D channel structures in a single layer, using a double-sided imprinting method. We demonstrated that the production rate of monodisperse droplet is increased by controlling the flow rate of continuous and dispersed phases in 3D MED with 8 droplet generators. Thus, we anticipate that this microfluidic system will be used in wide area including microparticle synthesis and screening system via encapsulation of various materials and cells in monodisperse droplets.

Prediction of Residual Layer Thickness of Large-area UV Imprinting Process (대면적 UV 임프린팅 공정에서 잔류층 두께 예측)

  • Kim, Kug Weon
    • Journal of the Semiconductor & Display Technology
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    • v.12 no.2
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    • pp.79-84
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    • 2013
  • Nanoimprint lithography (NIL) is the next generation photolithography process in which the photoresist is dispensed onto the substrate in its liquid form and then imprinted and cured into a desired pattern instead of using traditional optical system. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. Although one of the current major research trends of NIL is large-area patterning, the technical difficulties to keep the uniformity of the residual layer become severer as the imprinting area increases more and more. In this paper, with the rolling type imprinting process, a mold, placed upon the $2^{nd}$ generation TFT-LCD glass sized substrate($370{\times}470mm^2$), is rolled by a rubber roller to achieve a uniform residual layer. The prediction of residual layer thickness of the photoresist by rolling of the rubber roller is crucial to design the rolling type imprinting process, determine the rubber roller operation conditions-mpressing force & feeding speed, operate smoothly the following etching process, and so forth. First, using the elasticity theory of contact problem and the empirical equation of rubber hardness, the contact length between rubber roller and mold is calculated with consideration of the shape and hardness of rubber roller and the pressing force to rubber roller. Next, using the squeeze flow theory to photoresist flow, the residual layer thickness of the photoresist is calculated with information of the viscosity and initial layer thickness of photoresist, the shape of mold pattern, feeding speed of rubber roller, and the contact length between rubber roller and mold previously calculated. Last, the effects of rubber roller operation conditions, impressing force & feeding speed, on the residual layer thickness are analyzed with consideration of the shape and hardness of rubber roller.

Bragg Reflecting Waveguide Device Fabricated on a Flexible Substrate using a Nano-imprinting Technology (나노임프린팅 기술을 이용한 유연성 브래그 반사 광도파로 소자)

  • Kim, Kyung-Jo;Yi, Jeong-Ah;Oh, Min-Cheol
    • Korean Journal of Optics and Photonics
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    • v.18 no.2
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    • pp.149-154
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    • 2007
  • Bragg reflecting waveguide devices have been fabricated on a flexible polymer substrate utilizing a post lift-off process which could Provide excellent uniformity of grating Patterns on Plastic film. The 510 m Period Bragg grating pattern is made by two methods. In the first sample the grating is fabricated by exposing the laser interference pattern on a photoresist, and then it is inscribed by $O_2$ plasma etching. The grating pattern of the second sample is formed by a PDMS soft mold imprinting process. The selective adhesion property of SU-8 material for Au and Si surfaces is utilized to prepare a 100-mm thick plastic substrate. Single mode waveguide is fabricated on the plastic substrate using polymer materials with refractive indices of 1.540 and 1.430 for the core and the cladding layers, respectively. The Bragg grating on Plastic substrate does not show any degradation in its spectral response compared to the reference sample made on a silicon wafer.

MASK ROM IP Design Using Printed CMOS Process Technology (Printed CMOS 공정기술을 이용한 MASK ROM 설계)

  • Jang, Ji-Hye;Ha, Pan-Bong;Kim, Young-Hee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2010.05a
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    • pp.788-791
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    • 2010
  • We design 64-bit ROM IP for RFID tag chips using printed CMOS non-volatile memory IP design technology for a printed CMOS process. The proposed 64-bit ROM circuit is using ETRI's $0.8{\mu}m$ CMOS porocess, and is expected to reduce process complexity and cost of RFID tag chips compared to that using a conventional silicon fabrication based on a complex lithography process because the poly layer in a gate terminal is using printing technology of imprint process. And a BL precharge circuit and a BL sense amplifier is not required for the designed cell circuit since it is composed of a transmission gate instead of an NMOS transistor of the conventional ROM circuit. Therefore an output datum is only driven by a DOUT buffer circuit. The Operation current and layout area of the designed ROM of 64 bits with an array of 8 rows and 8 columns using $0.8{\mu}m$ ROM process is $9.86{\mu}A$ and $379.6{\times}418.7{\mu}m^2$.

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