• Title/Summary/Keyword: 이중접합

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Evaluation of Member Plastic Deformation Demands for Dual Systems with Special Moment Frames (특수모멘트골조를 가진 이중골조시스템을 위한 부재소성변형 평가)

  • Eom, Tae-Sung;Kim, Jae-Yo
    • Journal of the Earthquake Engineering Society of Korea
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    • v.14 no.5
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    • pp.41-51
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    • 2010
  • For safe seismic evaluation and design, it is necessary to predict the plastic deformation demands of members. In the present study, a quick and reasonable method for the evaluation of member plastic deformations of dual systems was developed on the basis of results of elastic analysis, without using nonlinear analysis. Plastic deformations of beams, columns, and walls are functions of member stiffness, story drift ratio, and moment redistribution determined from elastic analysis. For dual systems with rigid connections between walls and beams, an increase in the plastic deformations of beams due to the rocking effect was considered. The proposed method was applied to 8-story dual systems and the predicted plastic deformations were compared with the results of nonlinear analysis. The results showed that the proposed method accurately predicted the member plastic deformations with simple calculations, but that for the accurate evaluation of member plastic deformations, the inelastic story drift ratio must also be predicted with accuracy. The proposed method can be applied to both the performance-based seismic design of new structures and the seismic evaluation of existing structures.

Bolt-joint Structural Health Monitoring Technique Using Transfer Impedance (전달 임피던스를 이용한 볼트 접합부 구조 건전성 모니터링 기법)

  • Lee, Jong-Won
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.20 no.7
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    • pp.387-392
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    • 2019
  • A technique was researched to detect bolt looseness using a transfer impedance technique (the dual piezoelectric material technique) for monitoring the structural health of a bolt joint. In order to use the single piezoelectric material technique, an expensive impedance analyzer should be used. However, in the transfer impedance technique, low-cost fault detection can be performed using a general function generator and a digital multimeter. A steel plate frame test specimen composed of bolt joints was fabricated, and the tightening torques of the bolts were loosened step by step. By using the transfer impedance method, the damage index was obtained. It was found that the presence of faults could be reasonably estimated using the damage index, which increased with the degree of bolt looseness. An experiment was performed on the same specimen using the single piezoelectric material technique, and the results showed a similar tendency. It could be possible to estimate the damage of a bolt joint at low cost by eliminating the expensive impedance analyzer. This method could be used effectively for structural health monitoring after carrying out a study to estimate the fault location and severity.

VRS-based Precision Positioning using Civilian GPS Code Measurements (가상기준점 기반 코드신호를 이용한 정밀 측위)

  • Bae, Tae-Suk
    • Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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    • v.29 no.2
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    • pp.201-208
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    • 2011
  • With the increase in the number of smartphone users, precise 3D positional information is required by various applications. The positioning accuracy using civilian single-frequency pseudoranges is at the level of 10 m or so, but most applications these days are asking for a sub-meter level Therefore, instead of an absolute positioning technique, the VRS-based differential approach is applied along with the correction of the double-differenced (DD) residual errors using FKP (Flachen-Korrektur-Parameter). The VRS (Virual Reference Station) is located close to the rover, and the measurements are generated by correcting the geometrical distance to those of the master reference station. Since the unmodeled errors are generally proportional to the length of the baselines, the correction parameters are estimated by fitting a plane to the DD pseudorange errors of the CORS network. The DD positioning accuracy using 24 hours of C/A code measurements provides the RMS errors of 37 cm, 28 cm for latitudinal and longitudinal direction, respectively, and 76 cm for height. The accuracy of the horizontal components is within ${\pm}0.5m$ for about 90% of total epochs, and in particular the biases are significantly decreased to the level of 2-3 cm due to the network-based error modeling. Consequently, it is possible to consistently achieve a sub-meter level accuracy from the single-frequency pseudoranges using the VRS and double-differenced error modeling.

Chatacterization of GaAs/AlGaAs optical phase modulator fabricated by self-aligned process (자기정렬공정에 의한 GaAs/AlGaAs 광위상변조기의 제작 및 특성 측정)

  • 김병성;정영철;변영태;박경현;김선호;임동건
    • Korean Journal of Optics and Photonics
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    • v.7 no.3
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    • pp.287-294
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    • 1996
  • An optical phase modulator is fabricated in GaAs/AlGaAs doble heterostructure wafer grown by MOCVD. A self-aligned process, in which the same photoresist pattern is used for both the waveguide etching and the insulation layer formation, is developed and is found to be very useful, Fabry-Perot interference technique is applied to the measurement and the phase modulation efficiency is measured to be 22.5$^{\circ}$/Vmm at 1.31 ${\mu}{\textrm}{m}$ for TE polarization.

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Boundary element analysis of stress intensity factors for the bimaterial interface cracks (접합재료 경계면 균열의 응력세기계수에 대한 경계요소해석)

  • 이강용;최형집
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.11 no.6
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    • pp.884-894
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    • 1987
  • Stress intensity factors for the bimaterial interface cracks are determined by the boundary element method employing the multiregion technique along with the double-point concept. For this purpose, the formulas relating the stress intensity factors to the crack surface displacements, which are applicable to both the homogeneous and the bimaterial systems, are derived and the accuracy of the results is discussed using the preexisting analytic solutions. Besides, the stress intensity factors for the edge-cracked bimaterial plates are computed with various crack lengths and shear modulus ratios under the biaxial and the uniaxial loadings, respectively, to demonstrate the dependence of stress intensity factors on the loading conditions and the material properties.

A Study on the Mechanical Press Joining of Double Sheet Metals Using Physical Modeling (물리적 모델링법을 이용한 이중 박판의 기계적 접합 공정에 관한 연구)

  • Kwon, S.O.;Kim, B.J.;Moon, Y.H.
    • Transactions of Materials Processing
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    • v.16 no.2 s.92
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    • pp.107-112
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    • 2007
  • In this study, the mechanical joining process for double sheet metals was investigated by using physical modeling method. Process parameters of mechanical joining such as friction coefficient, drawing depth, pouch radius, die radius and material thickness are preliminarily analyzed by finite element method. Referring to the finite element analysis results mechanical joining system is designed on the basis of physical similarities. From the physical modeling test, the effect of process parameters on the deformation for the mechanical joining are experimentally investigated and optimized joining shape that can provide strong joining strength is obtained.

Study on Structural Analysis of DCB Structure with Aluminum Foam (알루미늄 폼을 갖는 DCB 구조체의 구조해석에 관한 연구)

  • Choi, Hae-Kyu;Kim, Sei-Hwan;Cho, Jae-Ung
    • Proceedings of the KAIS Fall Conference
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    • 2012.05b
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    • pp.617-619
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    • 2012
  • 본 논문에서는 알루미늄 폼 복합재료로 된 DCB(이중외팔보) 구조체의 파괴 거동을 시뮬레이션 해석하였다. 시뮬레이션 해석에 사용된 모델은 영국 공업규격과 ISO국제규격에 의거하여 3D모델을 설계하였다. 해석 결과 모델의 두께가 두꺼울수록 발생한 크랙의 길이가 길게 나타났고, 높은 하중이 발생하였다. 이와 같은 연구에서 얻어진 해석 결과를 통하여 알루미늄 폼 재질로 접합된 실제 복합재 구조물에 적용시켜 파괴거동을 분석하고 그 기계적인 특성을 파악할 수 있다.

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Analysis of the Isozyme Loci of the Beet Armyworm, Spodoptera exigua(H bner) (파밤나방(Spodoptera exigua(H bner))의 동위효소 유전좌위 분석)

  • 김용균;김경성
    • Korean journal of applied entomology
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    • v.37 no.1
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    • pp.19-22
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    • 1998
  • Number of loci, allele frequencies, and subunit structures of 17 kinds of isozymes were analyzed in a laboratory strain of the beet armyworm, Spodoptera exigua (Hubner) to get genetic markers. These isozymes had 30 loci with 21 polymorphic (70.0% polymorphism); effective number of alleles per locus, average heterozygosity (H,), and inbreeding coefficient (F) were 2.52, 32.8%, and 2 1.0%, respectively.

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A Bonding Surface Behavior of Bi-metal Bar through Hydrostatic Extrusion (이중복합봉 정수압 압출시 접합면 거동에 관한 연구)

  • 박훈재;나경환;조남선;이용신
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 1997.03a
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    • pp.140-143
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    • 1997
  • The present study is concerned with the hydrostatic extrusion process of copper-clad aluminium bar to investigate the basic flow characteristics. Considering the bonding mechanism of bi-metal contact surface as cold pressure welding, the normal pressure and the contact surface expansion are selected as process parameters governing the bonding condition. The critical pressure required for the bonding at the interface is obtained by solving a "local extrusion" using a slip line meyhod. A viscoplastic finite element method is used to analyze the steady state extrusion process. The boundary profile of bi-metal rod is predicted by tracking a particle path adjacent to interface surface. The variations of contact surface area and the normal pressure along the interface profile are predicted and compared to those by experiments.

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A Study on the Design and Electrical Characteristics of High Performance Smart Power Device (고성능 Smart Power 소자 설계 및 전기적 특성에 관한 연구)

  • Ku, Yong-Seo
    • Journal of IKEEE
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    • v.7 no.1 s.12
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    • pp.1-8
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    • 2003
  • In this study, the high performance BCD device structure which satisfies the high voltage and fast switching speed characteristics is devised. Through the process and device simulation, optimal process spec. & device spec. are designed. We adapt double buried layer structure, trench isolation process, n-/p-drift region formation and shallow junction technology to optimize an electrical property as mentioned above. This I.C consists of 20V level high voltage bipolar npn/pnp device, 60V level LDMOS device, a few Ampere level VDMOS, 20V level CMOS device and 5V level logic CMOS.

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