• Korean Journal of Materials Research
• /
• v.18 no.10
• /
• pp.547-551
• /
• 2008

Crack-free joining of $Si_3N_4\;and\;Al_2O_3$ using 15 layers has been achieved by a unique approach introducing Sialon polytypoids as a functionally graded materials (FGMs) bonding layer. In the past, hot press sintering of multilayered FGMs with 20 layers of thickness $500{\mu}m$ each has been fabricated successfully. In this study, the number of layers for FGM was reduced to 15 layers from 20 layers for optimization. For fabrication, model was hot pressed at 38 MPa while heating up to $1700^{\circ}$, and it was cooled at $2^{\circ}$/min to minimize residual stress during sintering. Initially, FGM with 15 layers had cracks near 90 wt.% 12H / 10 wt.% $Al_2O_3$ and 90 wt.% 12H/10 wt.% $Si_3N_4$ layers. To solve this problem, FEM (finite element method) program based on the maximum tensile stress theory was applied to design optimized FGM layers of crack free joint. The sample is 3-dimensional cylindrical shape where this has been transformed to 2-dimensional axisymmetric mode. Based on the simulation, crack-free FGM sample was obtained by designing axial, hoop and radial stresses less than tensile strength values across all the layers of FGM. Therefore, we were able to predict and prevent the damage by calculating its thermal stress using its elastic modulus and coefficient of thermal expansion. Such analyses are especially useful for FGM samples where the residual stresses are very difficult to measure experimentally.

• Korean Journal of Metals and Materials
• /
• v.50 no.4
• /
• pp.316-323
• /
• 2012

The aim of this study is to investigate the effect of post heat treatment on bonding properties of roll cladded Ti/MS/Ti materials. First grade Ti sheets and SPCC mild steel sheets were prepared and then Ti/MS/Ti clad materials were fabricated by a cold rolling and post heat treatment process. Microstructure and point analysis of the Ti/MS interfaces were performed using the SEM and EDX Analyser. Diffusion bonding was observed at the interfaces of Ti/MS. The thickness of the diffusion layer increased with post heat treatment temperature and the diffusion layer was verified as having $({\epsilon}+{\zeta})+({\zeta}+{\beta}-Ti)$ intermetallic compounds at $700^{\circ}C$ and an $({\zeta}+{\beta}-Ti)$ intermetallic compound at $800^{\circ}C$, respectively. The micro Knoop hardness of mild steel decreased with post heat treatment temperature; however, those of Ti decreased at a range of $500{\sim}600^{\circ}C$ and showed a uniform value until $800^{\circ}C$ and then increased rapidly up to $900^{\circ}C$. The micro Knoop hardness value of the diffusion layer increased up to $700^{\circ}C$ and then saturated with post heat treatment. A T-type peel test was used to estimate the bonding forces of Ti/Mild steel interfaces. The bonding forces decreased up to $800^{\circ}C$ and then increased slightly with post heat treatment. The optimized temperature ranges for post heat treatment were $500{\sim}600^{\circ}C$ to obtain the proper formability for an additional plastic deformation process.

• Journal of the Microelectronics and Packaging Society
• /
• v.29 no.3
• /
• pp.37-42
• /
• 2022

Recently, the semiconductor package structures are becoming thinner and more complex. As the thickness decrease, interfacial delamination due to material mismatch can be further maximized, so the reliability of interface is a critical issue in industry field. Especially, the polymers, which are widely used in semiconductor packaging, are significantly affected by the temperature and moisture. Therefore, in this study, the delamination prediction at the interface of package structure was performed through finite element analysis considering the moisture absorption and desorption under the various temperature conditions. The material properties such as diffusivity and saturated moisture content were obtained from moisture absorption test. The hygro-swelling coefficients of each material were analyzed through TMA and TGA after the moisture absorption. The micro-shear test was conducted to evaluate the adhesion strength of each interface at various temperatures considering the moisture effect. The finite element analysis of interfacial delamination was performed that considers both deformation due to temperature and moisture absorption. Consequently, the interfacial delamination was successfully predicted in consideration of the in-situ moisture desorption and temperature behavior during the reflow process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.35 no.6
• /
• pp.603-609
• /
• 2022

Passivation quality is mainly governed by epitaxial growth of crystalline silicon wafer surface. Void-rich intrinsic a-Si:H interfacial layer could offer higher resistivity of the c-Si surface and hence a better device efficiency as well. To reduce the resistivity of the contact area, a modification of void-rich intrinsic layer of a-Si:H towards more ordered state with a higher density is adopted by adapting its thickness and reducing its series resistance significantly, but it slightly decreases passivation quality. Higher resistance is not dominated by asymmetric effects like different band offsets for electrons or holes. In this study, multilayer of intrinsic a-Si:H layers were used. The first one with a void-rich was a-Si:H(I₁) and the next one a-SiO_x:H(I₂) were used, where a-SiO_x:H(I₂) had relatively larger band gap of ~2.07 eV than that of a-Si:H (I₁). Using a-SiO_x:H as I₂ layer was expected to increase transparency, which could lead to an easy carrier transport. Also, higher implied voltage than the conventional structure was expected. This means that the a-SiO_x:H could be a promising material for a high-quality passivation of c-Si. In addition, the i-a-SiO_x:H microstructure can help the carrier transportation through tunneling and thermal emission.

• Journal of the Korean Vacuum Society
• /
• v.12 no.4
• /
• pp.218-227
• /
• 2003

Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au ohmic contacts to n-type InCaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Si/Ti/Pt ohmic contact, as-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$/10 sec. However, the specific contact resistivity decreased remarkably to $2\times10^{-6}\Omega\textrm{cm}^2$ by annealing at $425^{\circ}C$/10sec. In the Pd/Si/Pd/Ti/Au ohmic contact, minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved by annealing at $400^{\circ}C$/20sec. In both ohmic contacts, low contact resistivity and non-spiking planar interface between ohmic materials and InGaAs were maintained. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.9 ㎓ and 74.4 ㎓, respectively, and maximum oscillation frequencies were 50.1 ㎓ and 52.5 ㎓, respectively. It shows very successful high frequency operations.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.20 no.8
• /
• pp.133-138
• /
• 2019

This study evaluated the tensile properties of SAPH440, a hot-rolled steel for automotive structural applications, based on GMAW lap welding, the welding current, the welding voltage, and the feed rate. Tensile tests were performed according to the joint parameters of the GMAW process, for which specimens were fabricated according to KS B ISO 9018 by lap welding. The bead appearance was observed in each condition, and the weldability was evaluated by the tensile test. Higher the welding current resulted in a deeper weld, but the tensile strength was not significantly different from when the parameter was fixed due to the fracture of the base material. When the current was higher than the voltage, as in the case of a welding current of 200 A and welding voltage of 17 V, a large amount of spatter is generated, the welding is unstable, and the welded part breaks. Higher the voltage resulted in the bead not causing defects in general, and it also affected the weldability. If the current and voltage were too low, the welding was not performed normally, and the tensile strength could not be measured. However, as the current increased, the increase of the voltage and the feed rate did not affect the tensile strength.