• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.5 s.248
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• pp.397-404
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• 2006

Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine chemical quenching phenomenon which is caused by radical adsorption and recombination processes on the surface, thermally grown silicon oxide plates with well-defined defect density were prepared. ion implantation technique was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). It has been found that as the ion energy is increased, the number of structural defect is also increased and non-stoichiometric condition of $SiO_x({\le}2)$ is enhanced.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.73-80
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• 2006

Thermally-driven effusion of inert gases out from Si(100), into which energetic $\~l keV\;He^+,\;Ne^+,\;A^r+,\;and\;Kr^+ ions$ had been implanted at a moderate substrate temperatures of $\~400 K$, was investigated by means of temperature-programmed desorption (TPD) mass spectrometry. While He effused out broadly over $500\~1,100 K$, Ne, Ar, and Kr effusion occurred sharply at 810, 860, and 875 K, respectively. Hydrogen adsorption/desorption analysis for the ion-treated Si(100) surfaces indicated minimal to severe damage by ions with increasing mass from He to Kr. Implications of these results in light of literature reports are discussed.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.37-45
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• 1998

In this paper, we report the first three-dimensional simulation result of the transient enhanced diffusion(TED) of dopants in the ion-implanted silicon by employing our 3D semiconductor process simulator, INPROS system. In order to simulate three-dimensional TED redistribution of dopants in silicon, the dopant distributions after the ion implantation was calculated by Monte Carlo(MC) method, followed by finite element(FE) numerical solver for thermal annealing. Excellent agreement between the simulated 3D profile and the SIMS data has been obtained for ion-implanted arsenic and phosphorus after annealing the boron marker layer at 75$0^{\circ}C$ for 2 hours. Our three-dimensional TED simulation could successfully explain the reverse short channel effect(RSCE) by taking the 3D point defect distribution into account. A coupled TED simulation and device simulation allows reverse short channel effect on threshold to be accurately predicted.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.76-76
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2002.06a
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• pp.57-57
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• 2002

• Electrical & Electronic Materials
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• v.6 no.4
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• pp.347-353
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• 1993

레이저 유기 압력 펄스법을 이용하여 가교폴리에틸렌필름과 전력케이블의 공간전하의 성질을 정량적으로 연구하여 다음과 같은 결론을 얻었다. 잔류가교제를 갖는 XLPE에서는 음극으로부터 현저한 전자주입이 나타나고 시료전체에 걸쳐 부의 공간 전하가 형성되었으며 음극으로 부터의 전자 주입은 전계상승에 따라 증가 하였다. XLPE 전력 케이블에서는 잔류가교제가 이온화하여 생긴 정 및 부의 헤테로 공간 전하가 음극 및 양극 부근에 형성되었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.280-280
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• 2015

플라즈마 진단법 중 내부에 삽입하여 측정하는 단일 랭뮤어 탐침법은 플라즈마 특성을 정확하게 측정할 수 있다. 탐침에 (-)극을 걸어서 들어오는 전류를 통해서 이온포화 전류밀도를 측정할 수 있다. 본 연구에서는 유도결합플라즈마에 흐르는 가스와 압력에 따라서 변화를 확인하였다. $H_2$, Ar, $CF_4$ gas로 10 mTorr, 70 mTorr, $CF_4$ 주입위치의 조건으로 플라즈마 밀도를 구하였다.

• Journal of the Korean Chemical Society
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• v.44 no.3
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• pp.212-219
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• 2000

An absorption spectrometry coupled with flow injection analysis has been developed and tested for the analysis of the Cr$_2O_7^{2-}$/Nn$O_4^-$ mixtures. Even though one has to inject the sample twice into the FIA system and the process of the sample treatment is required to completely destroy the Mn$O_4^-$ ion for the analysis of the Cr$_2O_7^{2-}$ ion, the new method has definite advantages over the current method. It utilizes only a single analytical wavelength (570 nm) and enables one to construct calibration curves which accurately follow the Beer's law over wide ranges of analytical concentrations of both ions ($2.0{\times}10^{-6}$M∼$8.0{\times}10^{-3}$M for Cr$_2O_7^{2-}$ ion, $2.0{\times}10^{-6}$M∼$4.0{\times}10^{-3}$M for MnO4- ion).

• Proceedings of the KAIS Fall Conference
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• 2004.06a
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• pp.165-167
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• 2004

본 논문에서는 반도체 공정 시뮬레이션을 위해 산화, 확산 및 이온 주입 공정을 모델링하고, 효율적인 실행과 상호 연관된 연속 공정의 시뮬레이션이 가능하도록 통합화된 환경을 구축하였다. 점성적 스트레스 모델을 이용한 산화 공정은 유속-압력 알고리즘과 경계요소법을 이용하여 안정된 해를 얻었으며, 선확산과 산화중배 현상이 포함된 확산 공정은 전진해법과 유한요소법을 이용하였다. 또한 이온주입 공정은 TRIM을 기본으로 다양한 공정 조건에 대한 모델이 추가된 몬테카를로 방법을 사용하였다. 편리한 사용자 입력 인터페이스와 그래픽적 출력을 제공하고, 윈도즈의 API함수를 이용하여 PC상에서도 적은 메모리로도 빠른 결과를 얻을 수 있도록 하였으며, 객체 지향적인 모듈화로 타 시뮬레이터와의 호환성이 가능하도록 구성하였다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.1
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• pp.33-39
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• 1974

A method of dopant implantation by low temperatme diffusion with ion collisions as well as the mechanism of its apparatus is to be introduced. The implantillg function is mainly based on the Principle of radiation enhanced diffusion due to the collisions of low energy Particles and the preheating of the substrate in an environment of rarefied air plasma. The implanted results of various dopants into semicondctors by the Implanter are also presented.