• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.2
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• pp.492-497
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• 2012

In this paper, we determined the scintillation and thermoluminescence properties of $Cs_2NaCeBr_6$ elpasolite scintillation crystal. The emission spectrum of $Cs_2NaCeBr_6$ is located in the range of 300 ~ 450 nm, peaking at 377 nm and 400 nm. And, the fluorescence decay time of the crystal is composed two components. The fast component is 140 ns (94%), and the slow component is 880 ns (6%) of the crystal. The after-glow is caused by the electron and hole traps in the crystal lattices. We determined thermoluminescence parameters of the traps in the crystal. The determined activation energy(E), kinetic order and frequency factor of the traps are 0.67 eV, 1.71 and $2.51{\times}10^8s^{-1}$ respectively. In this crystal, re-combination rate is more dominant phenomenon than the re-trapping rate.

• Korean Chemical Engineering Research
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• v.56 no.4
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• pp.447-452
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• 2018

Titanium nanotubes (TNT) of various lengths ranging from $0.34^{\circ}C$ to a maximum of $8.9^{\circ}C$ were prepared by anodizing a titanium metal sheet in an electrolyte containing fluorine ion ($F^-$) of HF, NaF and $NH_4F$. When TNT prepared by anodizing was calcined at $450^{\circ}C$, anatase crystals with photo activity were formed. The TNT-based dye-sensitized solar cell (DSSC) showed a maximum conversion efficiency of 4.71% when the TNT length was $2.5{\mu}m$. This value was about 18% higher than photo conversion efficiency of the FTO-based DSSC coated with titania paste. And the short circuit current density ($J_{sc}$) of the TNT-DSSC was $9.74mA/cm^2$, which was about 35% higher than the $7.19mA/cm^2$ of FTO-DSSC. The reason for the higher conversion efficiency of TNT-DSSC solar cells is that photoelectrons generated from dyes are rapidly transferred to the electrode surface through TNT, and the recombination of photoelectrons and dyes is suppressed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.446-446
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• 2009

표면 패시베이션 기술로 이용되는 수소화된 실리콘 질화막은 제조원가의 절감을 위한 실리콘 기판재료의 두께 감소에 따른 특성상의 문제점을 해결하기 위해 중요한 영향을 미치는 요소이다. 실리콘 질화막은 강한 기계적 강도, 우수한 유전적 특성, 수문에 의한 부식과 유동적 이온에 대한 우수한 저항력 때문에, 반도체 소자 산업에서 널리 사용되고 있다. 수소화된 실리콘 질화막은 반사방지 특성과 함께 표면 패시베이션의 질을 향상시킬 수 있다. 굴절률 1.9 ~ 2.3 범위에서 쉽게 변화 가능한 수소화된 실리콘 질화막은 굴절률 1.4 ~ 1.5 사이의 열적 산화막 보다 효과적인 반사방지막이다. 수소화된 실리콘 질화막을 사용한 태양전지에서는 효율을 높이기 위해서 기판 표면에서의 케리어 재결합이 억제되어져야한다. 또한, 수소화된 실리콘 질화막은 최적화된 두께와 굴절률을 가져야한다. 본 연구에서는 고효율 태양전지에 적용하기 위해 반송자 수명이 향상된 수소화된 실리콘 질화막을 플라즈마 화학 기상 증착법을 이용하여 증착하였다. 박막은 $250^{\circ}C\;{\sim}\;450^{\circ}C$에서 증착되었으며 증착된 박막은 1.94 to 2.05 굴절률 값을 가지고 있다. 반송자 수명을 증가시키기 위해 $650^{\circ}C\;{\sim}\;950^{\circ}C$에서 어닐링 하였고 반송자 수명을 측정하여 패시베이션 특성을 분석하였다. 수소화된 실리콘 질화막은 $850^{\circ}C$의 어닐링 온도와 굴절률 2.0 조건에서 가장 좋은 반송자 수명을 나타냈다.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.1020-1025
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• 1995

The Schottky barrier hieght(SBH) of Au/n-Si(100) were investigated by current-voltage(I-V) and capacitance voltage(C-V) measurement within a temperature range of l00K∼300K. The values of SBH at room temperature obtained from these two measurements were (0.79${\pm}$0.02)eV. The SBH obtained from the C-V measurement was temperature independent, while that obtained from the I-V measurement decreased linearly with decreasing temperature. This indicates that the Schottky diode has deviated from the thermionic emission theory at low-temperature, Thus, other current transport processes were considered and the contribution of recombination current was dominant at low temperature. We found that it leads to a lower SBH value. Thus, the conflicating results between C-V and I-V measurement were explained, C-V measurement is believed to yield mare reliable SBH values in present study since it is not affected by the current transport uncertainties.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.273-273
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• 2011

현재 사용되고 있는 플로팅 게이트를 이용한 플래시 메모리 소자는 비례축소에 의해 발생하는 단 채널 효과, 펀치스루 효과 및 소자간 커플링 현상과 같은 문제로 소자의 크기를 줄이는데 한계가 있다. 이러한 문제를 해결하기 위하여 silicon nitride와 같은 절연체를 전자의 트랩층으로 사용하는 charge trap flash (CTF) 메모리 소자에 대한 연구가 활발히 진행되고 있다. CTF 메모리 소자의 전기적 특성에 대한 연구는 활발히 진행 되었지만, 수치 해석 모델을 사용하여 메모리 소자의 전하수송 메커니즘을 분석한 연구는 매우 적다. 본 연구에서는 수치 해석 모델을 적용하여 개발한 시뮬레이터를 사용하여 CTF 메모리 소자의 프로그램 동작 시 전하수송 메커니즘에 대한 연구를 하였다. 시뮬레이터에 사용된 모델은 연속방정식, 포아송 방정식과 Shockley-Read-Hall 재결합 모델을 수치해석적 방법으로 계산하였다. 또한 CTF 소자 프로그램 동작 시 트랩 층으로 주입되는 전자의 양은 Wentzel-Kramers-Brillouin 근사 법을 이용하여 계산하였다. 트랩 층에 트랩 되었던 전자의 방출 모델은 이온화 과정을 사용하였다. 게이트와 트랩 층 사이의 터널링은 Fowler-Nordheim (FN) tunneling 모델, Direct tunneling 모델, Modified FN tunneling 모델을 적용하였다. FN tunneling 만을 적용했을때 보다 세가지 모델을 적용했을 때가 더 실험치와의 오차가 적었다. 그 이유는 시뮬레이션 결과를 통해 인가된 전계에 의해 Bottom Oxide 층의 에너지 밴드 구조가 변화하여 세가지 tunneling 모델의 구역이 발생하는 것을 확인 할 수 있었다. 계산된 결과의 전류-전압 곡선을 통해 CTF 메모리 소자의 프로그램 동작 특성을 관찰하였다. 트랩 층의 전도대역과 트랩 층 내부에 분포하는 전자의 양을 시간에 따라 계산하여 트랩 밀도가 시간이 지남에 따라 일정 값에 수렴하고 많은 전하가 트랩 될 수록 전하 주입이 줄어듬을 관찰 하였다. 이와 같은 시뮬레이션 결과를 통해 CTF 메모리의 트랩층에서 전하의 이동에 대해 더 많이 이해하여 CTF 소자가 가진 문제점 해결에 도움을 줄 것이다.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.190-198
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• 2010

Asymmetric model for plasma uniformity by Ar and $CF_4$ was modeled by the antenna structure, the diameter of chamber, and the distance between source and substrate for the development of plasma equipment for 450 mm wafer. The aspect ratio of chamber was divided by diameter, distance from substrate, and pumping port area. And we found the condition with the optimized plasma uniformity by changing the antenna structure. The drift diffusion and quasi-neutrality for simplification were used, and the ion energy function was activated for the surface recombination and etching reaction. The uniformity of plasma density on substrate surface was improved by being far of the distance between substrate wall and chamber wall, and substrate and plasma source. And when the antenna of only 2 turns was used, the plasma uniformity can improve from 20~30% to 4.7%.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.11
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• pp.4468-4472
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• 2010

SiOC films made by the inductively coupled plasma chemical vapor deposition were researched the relationship between the dielectric constant and the chemical shift. SiOC film obtained by plasma method had the main Si-O-C bond with the molecule vibration mode in the range of $930{\sim}1230\;cm^{-1}$ which consists of C-O and Si-O bonds related to the cross link formation according to the dissociation and recombination. The C-O bond originated from the elongation effect by the neighboring highly electron negative oxygen atoms at terminal C-H bond in Si-$CH_3$ of $1270cm^{-1}$. However, the Si-O bond was formed from the second ionic sites recombined after the dissociation of Si-$CH_3$ of $1270cm^{-1}$. The increase of the Si-O bond induced the redshift as the shift of peak in FTIR spectra because of the increase of right shoulder in main bond. These results mean that SiOC films become more stable and stronger than SiOC film with dominant C-O bond. So it was researched that the roughness was also decreased due to the high degree of amorphous structure at SiOC film with the redshift after annealing.

• Applied Chemistry for Engineering
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• v.21 no.4
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• pp.445-451
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• 2010

$TiO_2$ shows considerably efficient photoreaction activity under the ultraviolet range but it has disadvantage that there is no activity in the visible light range. In this study, it was tried to find a solution for the problem of this kind of photocatalyst by utilizing transition metal, which can show electronic transition with $TiO_2$ in the visible light area. Photocatalyst was prepared, which can have photocatalytic activity in the wide wavelength range, not only ultraviolet region but also visible light area and prevent the combination of electron and hole hindering the photoreaction. For this purpose, by using the ion exchange method, $TiO_2$ precursor and transition metal precursor were dipped into H typed strong acid ion-exchange resin. And two kind photocatalysts (Ti-M-SCM) in which transition metal and titanium dioxide coexist through the carbonization/activation process was prepared. Moreover, photolytic reaction under the wavelength 254 nm and 365 nm was performed for humic acid (HA) in the continuous reactor in order to estimate the efficiency of produced Ti-M-SCM.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.126-131
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• 1999

$Cd_{1-x}Mn_xTe$ thin films were grown on GaTs (100) substrates by hot-wall epitaxy method. From the XRD measurements, it was found that CdTe/GaAs (100)film was grown as a single crystal with the same growth plane of (100) and $Cd_{1-x}Mn_xTe$film as a poly crystal as Mn content was increased, and the lattice constant was decressed with the similar gradient of bulk crystal as x was increased. From the PL measurements, $L_1$line due to the exciton trapped on an acceptor and $L_2$line due to an exciton trapped on a shallow potential fluctuation were observed, and $L_1$line was observed only in $Cd_{0.91}Mn_{0.09}$te but it was disappeared probably due to a stronger lacalization of excitons with increasing alloy fluctuation.$L_2$line was dominant in case of $x{\ge}0.2$and for higher Mn contents the broad transition about 2.0eV associated to the 3d levels of the $Mn^{2+}$ ion dominated the PL spectrum, and the $L_2$ transition become weaker and weaker. For$x{\ge}0.4$, the transition line about 2.0eV due to $Mn^{2+}$ion showed no shift.

• The Journal of the Petrological Society of Korea
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• v.10 no.3
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• pp.202-211
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• 2001

Luminescence is a physical phenomenon exhibited by many non-conducting, crystalline materials, such as quartz and feldspar. Within the crystals, energy absorbed from ionising radiation frees electrons to move through the crystal lattice and some are trapped at defects in the lattice. Observable luminescence is produced by electrons, released from traps by stimulation by absorption of light, which recombine with lattice defects which act as luminescence centers - optically stimulated luminescence (OSL). In a similar way to thermoluminescence(TL) dating, controlled measurement of the OSL signal can provide a means of determining the time since the last exposure of a layer of sediment to sunlight, the age of the sediment. However, whereas in the thermoluminescence dating of sediment only part of the latent thermoluminescence signal is bleached by sunlight as the sediment is deposited and allowance must be made during the laboratory measurements for the light insensitive component, optically induced luminescence dating has the advantage of working only with light sensitive traps in the crystal. Determination of the time since deposition of Quaternary sediment samples from the OSL of quartz grains using blue light was performed. A series of experiments and recent developments relating OSL dating are described, beginning by identifying the features which make OSL signals suitable for the development of dating method. Additionally, there are suggestions as to future research for obtaining reliable ages and a comment on current best practice on procedures, with the dating results of Quaternary sediment.