• Title/Summary/Keyword: 이성질화

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Morphological change of Pt/MoO3/SiO2 for the Synthesis of i-Butylene from n-Butene (N-Butene으로부터 i-Butylene 합성을 위한 Pt/MoO3/SiO2 촉매의 표면 구조 변화)

  • Kim, Jin Gul
    • Applied Chemistry for Engineering
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    • v.7 no.5
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    • pp.861-868
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    • 1996
  • Skeletal isomerization reaction known as exothermic reaction shows possible maximum yield of i-butene from n-butene at $110^{\circ}C$ over $Pt/MoO_3/SiO_2$. Compared with conventional catalyst such as silica, zeolite, alumina etc., $Pt/MoO_3/SiO_2$ demonstrates higher yield while by-products except 2-butene do not form. Faster H spillover rate over $Pt/MoO_3/SiO_2$ is demonstrated via isothermal reduction experiment at $110^{\circ}C$ compared to the rate over $Pt/MoO_3/Al_2O_3$. Overall isomerization rates are proportional to higher spillover rates from Pt onto $MoO_3$ surface. The skeletal isomerization reaction is composed of two elementary steps. First, carbonium ion formation over Pt crystallites by H spillover. Second, carbenium ion formation over $MoO_3$ followed by formation of i-butene. Moreover, it is suggested that H spillover step from Pt surface onto $MoO_3$ is assumed to be the rate determining step and control the overall isomerization rate.

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Reaction characteristics of hydrocarbon fuels under various operation conditions of hydro-upgrading process for vegetable oil-based bio-jet fuel production (식물성 오일 기반 바이오항공유 제조공정에서 수소첨가 업그레이딩을 위한 운전조건에 따른 탄화수소화합물의 특성)

  • Kwak, Yeonsu;Jang, Jung Hee;Kim, Sungtak;Ahn, Minhwei;Lee, Eun-Sil;Han, Gi Bo;Jeong, Byung Hun;Han, Jeong Sik;Jeon, Cheol-Hwan
    • Journal of the Korean Applied Science and Technology
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    • v.35 no.3
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    • pp.731-743
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    • 2018
  • In bio-jet fuel production, selecting operating conditions of hydro-upgrading is of great importance to make iso-Paraffin rich hydrocarbons with carbon distribution including jet fuel range. Herein, iso-Paraffin rich biofuel including jet fuel range hydrocarbons ($C_8-C_{16}$) is produced from simultaneous cracking and isomerization using n-Paraffin rich hydrocarbon derived from hydrotreated vegetable oil over 0.5 wt..% Pt/Zeolite catalyst. We report and analyze the yields and compositions in the produced hydrocarbons affected by various operating conditions, such as reaction temperature, reaction pressure, molar ratio of reactants, and weight hourly space velocity. Aforementioned operating conditions not only can help interpret the reaction dynamics of hydro-upgrading, but also further produce bio jet-fuel after distillation.

Changes in Carotenoids Contents in Pureed and Cooked Carrot and Spinach during Storage (가열처리 및 저장조건에 따른 당근과 시금치퓨레의 Carotenoids 함량변화와 이성질화 형성에 관한 연구)

  • ;;Robert M, Russell
    • Korean journal of food and cookery science
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    • v.19 no.1
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    • pp.83-95
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    • 2003
  • Investigations were conducted on the changes in carotenoids content, and quantification of cis-trans-${\beta}$-carotene Isomers in pureed and cooked carrot and spinach during storage. The isomerization and degradation of carotenoids were monitored by high-performance liquid chromatography on a C$\_$30/ reversed-phase column with diode-array detection. The results showed that lutein, ail-trans-${\beta}$-carotene, ${\alpha}$-carotene, 9-cis-${\beta}$-carotene and 13-cis-${\beta}$-carotene were present in carrot and spinach. Zeaxanthin and cryptoxanthin were present in raw spinach. The contents of lutein, zeaxanthin, cryptoxanthin, ${\alpha}$-carotene and all-trans-${\beta}$-carotene in pureed and cooked carrot and spinach decreased with increasing storage period. The 9-cis and 13-cis carotenoid isomers were the major types formed in cooked carrot during storage. Cooking was not found to alter the carotenoid profile of the sample, but increased the total amount of carotenoids compared with pured ones. This increase could be explained that cooking itself increased the extraction efficiency and inactivated the enzymes degradating carotenoids.

Beckmann Rearrangement of Ring A Steroidal Oxime Using the Carbon tetrachloride-triphenylphosphine (사염화탄소와 트리페닐포스핀을 사용한 스테로이드 링 A 옥심의 벡크만 자리옮김반응)

  • Kim Jack C.;Choi Soon-Kyu;Park Won-Woo;Lee Yong-Tae
    • Journal of the Korean Chemical Society
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    • v.23 no.1
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    • pp.42-45
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    • 1979
  • The experimental procedures of Beckmann rearrangement mostly involve the use of vigorous conditions such as strongly acidic reagents (conc. HCl, $H_2SO_4$, $PCl_5$, etc.) or elevated temperatures, which frequently cause isomerization of ketooximes prior to rearrangement.We have effected the Beckmann rearrangement on $5{\alpha}$-cholestan-3-one oxime using the carbon tetrachloride-triphenylphosphine reagent under mild, neutral conditions to give 3-aza-A-homo-$5{\alpha}$-cholestan-4-one. This new, mild, facile and rapid general method of Beckmann rearrangement is presented, and compared with the classical (more conventional) Beckmann reagent of polyphosphoric acid.

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Studies on chemical wet etching of GaN (GaN계 질화합물 반도체의 습식식각 연구)

  • 윤관기;이성대;이일형;최용석;유순재;이진구
    • Proceedings of the IEEK Conference
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    • 1998.06a
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    • pp.398-400
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    • 1998
  • In this paper, the etching studies for n-GaN were carried out using the wet chemical, the photo-enhanced-chemical, and the electro-chemical etching methods. The experimental results show that n-GaN is etched in diluted NaOH solution at room temperture and the etched thickness of NaOH and electron concentrations. Te etching rate of n-GaN samples with n.simeq.1*10$^{19}$ cm$^{-3}$ were used to compare the photo-enhanced-chemical etching with the electrochemical etching methods. The removed thickness was 680.angs./25min by the electrochemical etching methods. The removed thickness was 680 .angs./25min by the electrochemical etching method ad 784.angs./25min by the photoenhanced-chemical etching method. The patterns are 100.mu.m*100.mu.m rectangulars covered with SiO$_{2}$film. It is shown that the profile of etched side-wall of the pattern is vertical without dependance of the n-GaN orientations.

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Crystalline Properties of Carbon Nitride films According to Substrates and Growth Conditions (기판과 성장조건에 따른 질화탄소막의 결정성장 특성)

  • 이지공;이성필
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12
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    • pp.1103-1109
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    • 2003
  • Crystalline carbon nitride films have been deposited by RF reactive magnetron sputtering system with negative DC bias. The carbon nitride films deposited on various substrates showed ${\alpha}$- C$_3$N$_4$,${\beta}$-C$_3$N$_4$ and lonsdaleite structures through XRD and FTIR We can find the grain growth of hexagonal structure from SEMI photographs, which is coincident with the theoretical carbon nitride unit cell. When nitrogen gas ratio is 70 % and RF power is 200 W, the growth rate of carbon nitride film on quartz substrate is about 2.1 $\mu\textrm{m}$/hr.

A Study on Physical Properties of Carbon Nitride Films and Application for Sensor Materials (질화탄소막의 물리적 특성과 센서재료 응용에 관한 연구)

  • Kim, Sung-Yeop;Lee, Ji-Gong;Chang, Choong-Won;Lee, Sung-Pil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.5
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    • pp.436-442
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    • 2007
  • Physical properties and impedance-humidity characteristics of carbon nitride films were investigated for micro-humidity-sensors. Carbon nitride films were deposited in low temperature and low power for application of semiconductor fabrication process, and empirical equation was proposed for thickness evaluation. Deposited films had an uniform and compact surface comparing with previously reported results, which was expected a good candidate for humidity sensing materials. Carbon nitride humidity sensors based on Si substrate revealed good humidity-impedance characteristics with a wide range of relative humidity and showed low hysteresis.

A Study on the Humidity Sensing Properties of Crystalline Carbon Nitride Films (결정성 질화탄소막의 습도 감지특성에 관한 연구)

  • 이지공;하세근;김정훈;이성필
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.5
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    • pp.521-525
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    • 2004
  • Crystalline carbon nitride films were attempted for an application of humidity sensors. The films were deposited on $Al_2$O$_3$substrate having intermigrated electrodes by reactive rf magnetron sputtering system. The film revealed a good humidity-resistance characteristics as well as humidity-capacitance ones in the humidity range of 10∼95 RH(%). Temperature dependence was also investigated. These results suggest that the carbon nitride film has a possibility for new humidity-sensitive material.

Color Coating Technology by Using PVD Processes (PVD 법을 이용한 칼라코팅 기술)

  • Lee, Geon-Hwan;Lee, Seong-Hun;Park, Sang-Eon;Lee, Jong-Ha
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2009.05a
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    • pp.104-104
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    • 2009
  • 최근 국내외 휴대용 IT 관련 산업에서는 제품의 소형화에 경량화에 따른 기술 개발과 더불어 다양한 색상의 구현을 위한 연구가 활발히 진행되고 있다. 휴대용 전자 부품에 있어서 PVD 코팅은 고경도 박막을 금속 판재 및 플라스틱 기판 상에 증착하여 표면경도를 증대시켜 내구성 향상에 활용되고 있으며, 질화물 계열을 통하여 Yellow, Blue, Black, Red계 등의 색상 구현이 가능하여 현재 가장 큰 구매력의 원천으로 평가되고 있는 제품 디자인 분야에 응용이 되고 있다. 본 연구에서는 아크이온 플레이팅법과 스퍼터링법을 이용하여 고경질, 고내식 표면층 형성방법 및 다양한 칼라를 구현하는 방법에대한 연구를 수행하였다.

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Mechanical Characteristics of Crystalline Carbon Nitride Films Grown by Reactive Sputtering (반응성 스퍼터링으로 성장된 결정성 질화탄소막의 기계적 특성)

  • 이성필;강종봉
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.2
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    • pp.147-152
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    • 2002
  • Carbon nitride thin films were deposited by reactive sputtering for the hard coating materials on Si wafer and tool steels. When the nitrogen content of carbon nitride film on tool steel is 33.4%, the mean hardness and elastic modulus are 49.34 GPa and 307.2 GPa respectively. The nitrided or carburised surface acts as the diffusion barrier which shows better adhesion of carbon nitride thin film on the steel surface. To prevent nitrogen diffusion from the film, steel substrate can be saturated by nitrogen forming a Fe$_3$N layer. The desirable structure at the surface after carburising is martensite, but sometimes, due to high carbon content an proeutectoid Fe$_3$C structure may form at the grain boundaries, leaving the overall surface brittle and may cause defects.