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http://dx.doi.org/10.4313/JKEM.2003.16.12.1103

Crystalline Properties of Carbon Nitride films According to Substrates and Growth Conditions  

이지공 (경남대학교 전기전자공학부)
이성필 (경남대학교 전기전자공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.12, 2003 , pp. 1103-1109 More about this Journal
Abstract
Crystalline carbon nitride films have been deposited by RF reactive magnetron sputtering system with negative DC bias. The carbon nitride films deposited on various substrates showed ${\alpha}$- C$_3$N$_4$,${\beta}$-C$_3$N$_4$ and lonsdaleite structures through XRD and FTIR We can find the grain growth of hexagonal structure from SEMI photographs, which is coincident with the theoretical carbon nitride unit cell. When nitrogen gas ratio is 70 % and RF power is 200 W, the growth rate of carbon nitride film on quartz substrate is about 2.1 $\mu\textrm{m}$/hr.
Keywords
Carbon nitride films; RF magnetron sputter; Si wafer; Alumina;
Citations & Related Records
Times Cited By KSCI : 4  (Citation Analysis)
연도 인용수 순위
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