• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1397-1399
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• 2002

Effects of bottom electrode materials (Al, Cu, Ti, and Mo), included in film bulk acoustic resonators (FBARs), on the orientation of piezoelectric AlN thin films and the frequency response characteristic of resonators were investigated. The texture coefficient (TC) for (002) orientation, crystallite size, full width half maximum (FWHM), and surface roughness of deposited AlN films were measured for the various bottom electrodes. The return tosses estimated from the frequency responses of fabricated resonators were also compared. Experimental results showed that the difference of lattice constant and thermal expansion coefficient between the bottom electrode and the AlN film were the most important factors for achieving a high performance resonator.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.8
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• pp.319-324
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• 2003

AIN thin films are deposited on Si (100) and $SiO_2$/Si substrates by using an RF magnetron sputtering method and by changing the conditions of deposition variables, such as RF power, $N_2$/Ar flow ratio, and substrate temperature ($T_sub$). For all the deposited AIN films, XRD Peak patterns are monitored to examine the effect of deposition condition on the crystal orientation. Highly (002)-oriented AIN films are obtained at following nominal deposition conditions; RF Power : 350W, $N_2$/Ar ratio = 10/20, T$_{sub}$ : $250^{\circ}C$, and working pressure = 5mTorr, respectively. AIN-based SAW devices are fabricated using a lift-off method by varying the thickness of AIN layer. Insertion losses and side-lobe rejection levels of fabricated SAW devices are extracted from their frequency response characteristics, which are also compared in terms of AIN thickness and substrate. Relationships between the film properties of AIN films and the frequency responses of SAW devices are discussed. It is concluded from the experimental results that the (002)-preferred orientation as well as the surface roughness of AIN film may play a crucial role of determining the device performances of AIN-SAW devices.s.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.417-422
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• 2002

ZnO thin films were deposited on various substrates, such as Si-(111), SiO$_2$(5000 $\AA$ by thermal CVD)/Si-(100), and SiO$_2$(2000 $\AA$ by RF sputtering)/Si-(100). The (002)-orientation, surface morphology and roughness, and electrical resistivity of deposited films were measured and compared in terms of substrate. Surface acoustic wave(SAW) filters with a multilayered configuration of IDT/ZnO/SiO$_2$/Si were also fabricated and the IDT was obtained using a lift-off method. From the frequency-response characteristics of fabricated devices, the insertion loss and side-lobe rejection were estimated. The experimental results showed that the (002)-oriented growth nature of ZnO films, which played a crucial role of determining the characteristic of SAW device, was strong1y dependent upon the SiO$_2$buffer.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.28 no.5
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• pp.533-538
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• 1995

Ten specimens of the imported pufferfish, fugu flavidus ('Sarnchaebog'), from China were assayed for anatomical distribution of toxicity, Also, a toxic ovary of each specimen was excised, and transferred into Bio-gel P-2 column chromatography for purification of the toxins. The average toxicity of all specimens assayed was calculated to be $4.1\pm 0.5\;in\;liver,\;2.8\pm1.1\;intestine,\;0.8\pm0.5\;skin,\;2.3\pm1.5\;testis\;39.0\pm16.0\;ovary\;and\;7.0\pm2.0 MU/g$ bile, respectively; Ovary was weakly toxic, but others were non-toxic or weakly toxic. Moreover, instrumental analyses including thin layer chromatography(TLC) and electrophoresis disclosed tetrodotoxin (TTX) and anhydro tetrodotoxin (anh-TTX), respectively. The toxins of the ovary gave four peaks in high performance liquid chromatography (HPLC) whose retention times (14 and 24 min) were close to those of TTX and anh-TTX, respectively.

• Economic and Environmental Geology
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• v.40 no.5
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• pp.661-673
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• 2007

Rock materials of the three-storied stone pagoda in the Cheongryongsa temple in Korea are mainly composed of gneissose two-mica granite and fine-grained granite. This stone pagoda shows structural instability due to cracks and breaking-out of the stones. The surface properties of the stone is highly degraded by various inorganic pollutants and epilithic biospecies. Therefore, this study carried out comprehensive deterioration diagnosis by non-destructive methods, and some conservation treatments base on the diagnosis were carried out to reduce weathering progress. As the treatments, the biospecies and lichen that covering on the stone surfaces were removed by dry and wet cleaning, and degraded concrete applied to the pagoda for restoration in the past was removed and repaired with epoxy resin. Oxidized iron plates inserted between the rock properties were also substituted titanium stainless steels. After all processes are completed, we sprayed consolidant on the rock surface. Finally, the ground of the stone pagoda was rearranged using small rock aggregates, and the fence was established for control of artificial deterioration by visitors and environmental maintenance.

• The Korean Journal of Food And Nutrition
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• v.18 no.4
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• pp.302-308
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• 2005

To examine the difference in each ingredient between the yeast strain and two raspberry kinds (Rubus crataegifolius Bunge(RCB), Rubus coreanus Miquel(RCM)) in the making of raspberry wine, five active dry yeasts were selected. Regarding the RCM ethanol content, the raspberry wine fermented by Lalvin Wl5 was the highest, while those fermented by Prise de Mousse were the lowest. The pH of the RCM was $3.58\~3.63$, and Montrachet was the highest one of total acidity. In the case of nonflavonoid phenols, the RCM fermented by Montrachet was the highest one, and in the case of flavonoid phenol and total phenol, the RCM fermented by Epernay II was the highest. The content of organic acid in RCM were highest in the following order: citric acid > oxalic acid > malic acid, and tartaric acid was not detected at all. The average content of malic acid in RCM after malolactic fermentation was reduced by almost $65.5\%$, and the RCM fermented by Prise de Mousse, after malolactic fermentation, was $73.3\%$. This latter was the highest, while the RCM fermented by Epernay II was the lowest, at $59.1\%$.

• Journal of the Korean Magnetics Society
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• v.18 no.2
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• pp.49-53
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• 2008

Magnetic and crystallographic properties of patterned media fabricated by nanoimprint lithography and Co-Pt electroplating were studied. Thin films of Ru(20 nm)/Ta(5 nm)/$SiO_2$(100 nm) were deposited on Si(100) wafer and then 25 nm hole pattern was fabricated by nanoimprint lithography on substrate. The electroplated Co-Pt nano-dots have the diameter of 35 nm and the height of 27 nm. Magnetic dot patterns of Co-Pt alloy were created using electroplated Co-Pt alloy and then their properties were measured by MFM, SQUID, SEM, TEM and AFM. We observed single domain with perendicular anisotropy for each dot and achieved optimum coercivity of 2900 Oe. These results mean that patterned media fabricated by nanoimprint lithography and electroplating have good properties in view of extending superparamagnetic limit while satisfying the writability requirements with the present write heads.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.43-49
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• 2000

The TiN thin films were deposited by ALE(atomic layer epitaxy) on (100) silicon substrate. The TiN thin films were characterized by means of XRD, 4-point probe, AFM, AES and SEM. TEMAT(terakis(ethyl methy lamino)titanium) and $NH_3$ were injected into the reactor in sequence of TEMAT-$N_2-NH_3-N_2$ to ensure a saturated surface reaction. As a result, the depostion rate of the TiN film was controlled by self-limiting growth mechanism at temperature range form 150 to 220 $^{\circ}C$. Deposited TiN films, all of which show amorphous structure, had a fixed deposition rate of 4.5 ${\AA}$/cycle. The resistivity of 210 ~ 230 ${\mu}{\Omega}{\cdot}$cm and the surface r.m.s. roughness of 7.9 ~ 9.3 ${\AA}$ were measured. When TiN film of 2000 ${\AA}$ were deposited, a excellent step coverage were observed in a trench structure of 0.43${\mu}m$ contacts with 6:1 aspect ratio.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.395-396
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• 2011

본 논문에서는 30% 내외의 평균반사율을 가지는 다결정 실리콘 태양전지의 입사광 손실을 최소화하여 광전변환효율 극대화를 구현하기 위해서 SF6/O2 혼합가스를 이용한 RIE 표면 texturing 공정을 수행하였다. 현재 다결정 실리콘 태양전지는 다양한 방향의 grain을 가지기 때문에 단결정 실리콘에 적용되는 습식 식각 방식이 다결정 실리콘 표면 texturing에 적절하지 않은 것으로 알려져 있다. 이를 개선하기 위해서 이방성 식각 특성을 가지는 다양한 texturing 방법이 시도되고 있다. 대표적으로 기계적인 방식의 V-grooving, 레이저 grooving, 플라즈마 건식식각을 이용한 texturing 및 산 용액을 이용한 texturing 등의 연구가 보고되고 있다. 그 중에서 플라즈마 건식식각 방식의 하나인 RIE를 이용한 표면 texturing 공정이 간단한 공정과 산업계 응용의 용이성 때문에 활발히 연구되어 왔다. 특히 Sandia group과 일본 Kyocera사의 연구 결과에서는 그 가능성을 입증하고 있다. 본 연구에서는 공정의 단순화와 안전한 공정을 위해서 SF6/O2 혼합 가스를 이용하여 마스크 패턴 공정없이 RIE texturing 공정을 수행하였으며, RIE-textured 다결정 실리콘에 대해서 태양전지를 제작하여 표면 texturing이 광전변환효율에 미치는 영향에 대해서 분석하였다. 그 결과 SF6/O2 혼합 가스를 이용한 RIE texturing은 다결정 실리콘 표면에 주로 needle 구조를 형성하는 것을 확인하였다. 각 texturing 조건별 반사율의 차이는 needle 구조의 조밀도와 관련되는 것을 알 수 있었으며, 동일 공정 parameter 상에서 식각 시간 1, 2, 3, 4, 5분 기준 시간에 따른 표면 구조 분석 결과 seed 가 형성되고 그에 따라서 needle 형태로 식각되는 과정을 관찰하였다. 반사율은 분당 약 4%씩 낮아져 5분 식각 후 14.45% 까지 낮아졌으며, 표면 구조에서 폭은 약 30 nm로 모두 일정하며, 길이가 약 20, 30, 50, 80, 100 nm으로 증가되었다. 이 결과로 보아 seed로부터 needle 구조가 심화되어가는 것을 알 수 있었다. 시간에 따른 RIE texturing 후 제작된 태양전지는 효율이 1분 식각 기준 15.92%에서 약 0.35% 씩 낮아져 5분 식각 후 14.4%로 낮아졌다. Voc 는 texturing 시간에 관계없이 일정하며 Isc가 점점 감소되는 것으로 확인되었다. EQE 결과도 이와 동일하게 RIE texturing 시간이 길어질수록 전체 파장 범위에서 일정하게 낮아지는 것이 관찰되었다. Electroluminescence(EL) 이미지 결과 texturing 시간이 길어진 태양전지일수록 점점 어두운 이미지가 나타나 5분 식각의 경우 가장 어두운 결과를 나타내었다. 이런 결과는 한 가지 이유보다는 복합적인 문제로 예상되는데 궁극적으로는 RIE 공정 후 표면에 쌓인 charged particle들이 trap 준위를 형성하여 효율 및 공정상에 영향을 미친 것으로 보이며, 특히 잔류 O기가 불균일한 산화막을 형성하는 것으로 예상된다. 또한 EL 분석 결과를 볼 때 RIE texturing 공정이 길어질수록 불안정한 pn-junction을 형성하는 것을 확인하였으며, emitter 층 형성 후 PSG (phosphorous silica glass) 공정에서 needle의 상부 구조가 무너지면서 면저항이 증가된 결과로 분석된다. PSG 제거 후 측정된 면저항의 경우 3분 texturing 샘플부터 면저항이 약 4${\Omega}/sq$ 정도 증가됨을 확인하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.7
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• pp.486-493
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• 2003

Schottky type A $l_{0.33}$G $a_{0.67}$N ultraviolet photodetectors were fabricated on the MOCVD grown AlGaN/ $n^{＋}$-GaN and AlGaN/AlGaN interlayer/ $n^{＋}$-GaN structures. The grown layers have the carrier concentrations of -$10^{18}$, and the mobilities were 236 and 269 $\textrm{cm}^2$/V.s, respectively. After mesa etching by ICP etching system, the Si3N4 layer was deposited for passivation between the contacts and Ti/AL/Ni/Au and Pt were deposited for ohmic and Schottky contact, respectively. The fabricated Pt/A $l_{0.33}$G $a_{0.67}$N Schottky diode revealed a leakage current of 1 nA for samples with interlayer and 0.1$\mu\textrm{A}$ for samples without interlayer at a reverse bias of -5 V. In optical measurement, the Pt/A $l_{0.33}$G $a_{0.67}$N diode with interlayer showed a cut-off wavelength of 300 nm, a prominent responsivity of 0.15 A/W at 280 nm and a UV-visible extinction ratio of 1.5x$10^4./TEX>.