• Title/Summary/Keyword: 유리 기판

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Vector Network Analyzer Ferromagnetic Resonance Study of Py Thin Films (Vector Network Analyzer를 이용한 Py 박막의 강자성공명연구)

  • Shin, Yong-Hwack;Ha, Seung-Seok;Kim, Duck-Ho;You, Chun-Yeol
    • Journal of the Korean Magnetics Society
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    • v.20 no.1
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    • pp.18-23
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    • 2010
  • Ferromagnetic resonance (FMR) measurement is an important experimental technique for the study of magnetic dynamics. We designed and set up the vector network analyzer ferromagnetic resonance (VNA-FMR) measurement system with home made coplanar waveguides (CPW). We examined 10-, 20-, 40-nm thick Py thin films to test the performance of the VNA-FMR measurement system. We measured S-parameter (transmission/reflection coefficient) of Py thin films on a CPW. Resonance frequency is investigated from 2.5 to 7 GHz for a field range from 0 to 490 Oe. The VNA-FMR data shows the resonance frequency increment when the external magnetic field increases. We also investigated Gilbert damping constant of Py thin film using resonance frequency (${\omega}_r$) and linewidth ($\Delta\omega$). After investigating dependence of thickness, we find that an decrease in S-parameter intensity as Py thin film thickness decreases. And the FMR results show that the effective saturation magnetization, $M_{eff}$, increase from 7.205($\pm$0.013) kOe to 7.840($\pm$0.014) kOe, while the film thickness varies from 10 to 40 nm.

Analysis of Coating Uniformity through Unsteady and Steady State Computer Simulation in Slot Coating (슬롯코팅에서 정상 및 비정상상태 컴퓨터해석을 통한 코팅의 균일성 분석)

  • Woo, Jeong-Woo;Sung, Dal-Je;Lyu, Min-Young
    • Polymer(Korea)
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    • v.38 no.5
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    • pp.640-644
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    • 2014
  • As a process of plat panel display production, slot coating is widely used for the coating of photoresist on a wide glass substrate. A uniform coating thickness is important, and the coating uniformity is divided into nozzle and machine directions. The machine and nozzle directions coating uniformities are influenced by the operation condition of coater and flow uniformity inside the die, respectively. Non-uniform coating during steady coating process occurs according to those factors, however, non-uniform coating along the machine and nozzle directions has been observed at the beginning of coating by unsteady flow. In this study, steady and unsteady state flow simulations have been performed and compared with experiment to examine the causes of non-uniform coating. Computational results exhibited that it took a time to get a uniform pressure distribution at whole inside the die, and during this period of time edge regions showed lower exit velocity compared with center region. Subsequently edge regions had thinner coated layers than center region. However edge regions showed higher exit velocity than center region after steady state, and this made edge regions had thicker coated layer than center region.

The Hydrogenated Micro-crystalline Silicon(${\mu} c-Si:H$) Films Deposited by Hot Wire CVD Method (Hot Wire CVD법에 의한 수소화된 미세결정 실리콘(${\mu} c-Si:H$) 박막 증착)

  • Lee, Jeong-Cheol;Song, Jin-Su;Park, Lee-Jun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.8
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    • pp.17-27
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    • 2000
  • This paper presents deposition and characterization of hydrogenated microcrystalline silicon (${\mu}c$ -Si:H) films on low cost glass substrate by Hot Wire CVD(HWCVD). The HWCVD ${\mu}c$ -Si:H films had deposition rates ranging from 2${\AA}$/sec to 35${\AA}$/sec with the variations of preparation conditions, which was 10 times higher than that of the films obtained from the conventional PECVD method. From the Raman spectroscopy, the prepared silicon films were found to be composed of the mixture of crystalline and amorphous phases. The crystalline volume fraction and average crystallite size, obtained from the Raman To mode peak near 520cm$^{-1}$, were 37-63% and 6-10 nm, respectively. The conductivity activation energy($E_a$) of the ${\mu}c$ -Si:H films, representing the difference of conduction band and Fermi level in an intrinsic semiconductors, increased from 0.22eV to 0.68eV with increasing pressure from 30mTorr to 300mTorr. The increase of $E_a$ with pressure indicates that the deposited films have properties close to intrinsic semiconductors, which is also proved with low dark conductivity of the ${\mu}c$ -Si:H deposited at 300mTorr. The tungsten concentration incorporated into films was about $6{\times}10^{16}atoms/cm^3$ in the samples prepared at wire temperature of 1800$^{\circ}C$.

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Fabrication of super hydrophilic TiO2 thin film by a liquid phase deposition (액상증착법에 의한 초친수 TiO2 박막 제조)

  • Jung, Hyun-Ho;Kim, Jin-Ho;Hwang, Jong-Hee;Lim, Tae-Young;Choi, Duk-Gun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.5
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    • pp.227-231
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    • 2010
  • Super hydrophilic $TiO_2$ thin films with photocatalytic property were successfully fabricated on a glass substrate by liquid phase deposition (LPD). The $TiO_2$ thin film formed nano particles on a surface at $70^{\circ}C$. As an immersion time in $TiF_4$ solution increased, the thickness of thin films gradually increased. $TiO_2$ thin film showed a water contact angel of below ca. $5^{\circ}$ and the transmittance of ca. 75~90 % in visible range. In addition, $TiO_2$ thin film showed the photocatalytic property to decompose methyl orange solution by the illumination of UV light. The surface morphologies, optical properties and contact angel of prepared thin films with a different immersion time were measured by field emission scanning electron microscope (FE-SEM), atomic force microscope (AFM), UV-Vis spectrophotometer and contact angle meter.

Preparation of Nanostructures Using Layer-by-Layer Assembly and Applications (층상자기조립법을 이용한 나노구조체의 제조와 응용)

  • Cho, Jin-Han
    • Journal of the Korean Vacuum Society
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    • v.19 no.2
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    • pp.81-90
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    • 2010
  • We introduce a novel and versatile approach for preparing self-assembled nanoporous multilayered films with antireflective properties. Protonated polystyrene-block-poly (4-vinylpyrine) (PS-b-P4VP) and anionic polystyrene-block-poly (acrylic acid) (PS-b-PAA) block copolymer micelles (BCM) were used as building blocks for the layer-by-layer assembly of BCM multilayer films. BCM film growth is governed by electrostatic and hydrogen-bonding interactions between the oppositely BCMs. Both film porosity and film thickness are dependent upon the charge density of the micelles, with the porosity of the film controlled by the solution pH and the molecular weight (Mw) of the constituents. PS7K-b-P4VP28K/PS2K-b-PAA8K films prepared at pH 4 (for PS7K-b-P4VP28K) and pH 6 (for PS2K-b-PAA8K) are highly nanoporous and antireflective. In contrast, PS7K-b-P4VP28K/PS2K-b-PAA8K films assembled at pH 4/4 show a relatively dense surface morphology due to the decreased charge density of PS2K-b-PAA8K. Films formed from BCMs with increased PS block and decreased hydrophilic block (P4VP or PAA) size (e.g., PS36K-b-P4VP12K/PS16K-b-PAA4K at pH 4/4) were also nanoporous. Furthermore, we demonstrate that the nanostructured electrochemical sensors based on patterning methods show the electrochemical activities. Anionic poly(styrene sulfonate) (PSS) layers were selectively and uniformly deposited onto the catalase (CAT)-coated surface using the micro-contact printing method. The pH-induced charge reversal of catalase can provide the selective deposition of consecutive PE multilayers onto patterned PSS layers by causing the electrostatic repulsion between next PE layer and catalase. Based on this patterning method, the hybrid patterned multilayers composed of platinum nanoparticles (PtNP) and catalase were prepared and then their electrochemical properties were investigated from sensing $H_2O_2$ and NO gas. This study was based on the papers reported by our group. (J. Am. Chem. Soc. 128, 9935 (2006); Adv. Mater. 19, 4364 (2007); Electro. Mater. Lett. 3, 163 (2007)).

Influence of Oxygen Flow Ratio on the Properties of In2O3 Thin Films Grown by RF Reactive Magnetron Sputtering (라디오파 반응성 마그네트론 스퍼터링으로 증착된 In2O3 박막의 특성에 산소 유량비의 변화가 미치는 효과)

  • Kwak, Jun-Ho;Cho, Shin-Ho
    • Journal of the Korean Vacuum Society
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    • v.19 no.3
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    • pp.224-229
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    • 2010
  • Indium oxide $(In_2O_3)$ thin films have been prepared on glass substrate by using radio-frequency reactive magnetron sputtering with changing the oxygen flow ratio. The substrate temperature was kept at a fixed value of $400^{\circ}C$, and the sputtering gas and reactive gas were supplied with argon and oxygen, respectively. The oxygen partial flow ratio was varied by controlling the amount of oxygen with respect to the total mixed gases, 10%, 20%, 30%, 40%, and 50%. The optical, electrical, and structural properties of the deposited thin films were investigated by using ultraviolet-visible-near infrared spectrophotometer, Hall measurement, and X-ray diffractometer and scanning electron microscopy. The $In_2O_3$ thin film deposited at 20% of oxygen flow ratio showed an average transmittance of 86% in the wavelength range of 430~1,100 nm, an electrical resistivity of $1.1{\times}10^{-1}{\Omega}cm$. The results show that the transparent conducting films with optimum conditions can be achieved by controlling the oxygen flow ratio.

Electrical Properties of Eco-Friendly RuO2-Based Thick-Film Resistors Containing CaO-ZnO-B2O3-Al2O3-SiO2 System Glass for AlN Substrate (Electrical Properties of Eco-Friendly RuO2-Based Thick-Film Resistors Containing CaO-ZnO-B2O3-Al2O3-SiO2 계 유리가 적용된 질화알루미늄 기판용 RuO2계 친환경 후막저항의 전기적 특성 연구)

  • Kim, Min-Sik;Kim, Hyeong-Jun;Kim, Hyung-Tae;Kim, Dong-Jin;Kim, Young-Do;Ryu, Sung-Soo
    • Journal of the Korean Ceramic Society
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    • v.47 no.5
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    • pp.467-473
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    • 2010
  • The objective of this study is to prepare lead-free thick film resistor (TFR) paste compatible with AlN substrate for hybrid microelectronics. For this purpose, CaO-ZnO-$B_2O_3-Al_2O_3-SiO_2$ glass system was chosen as a sintering aid of $RuO_2$. The effects of the weight ratio of CaO to ZnO in glass composition, the glass content and the sintering temperature on the electrical properties of TFR were investigated. $RuO_2$ as a conductive and glass powder were dispersed in an organic binder to obtain printable paste and then thick-film was formed by screen printing, followed by sintering at the range between $750^{\circ}C$ and $900^{\circ}C$ for 10 min with a heating rate of $50^{\circ}C$/min in an ambient atmosphere. The addition of ZnO to glass composition and sintering at higher temperature resulted in increasing sheet resistance and decreasing temperature coefficient of resistance. Using $RuO_2$-based resistor paste containing 40 wt%glass of CaO-20.5%ZnO-25%$B_2O_3$-7%$Al_2O_3$-15%$SiO_2$ composition, it is possible to produce thick film resistor on AlN substrate with sheet resistance of $10.6\Omega/\spuare$ and the temperature coefficient of resistance of 702ppm/$^{\circ}C$ after sintering at $850^{\circ}C$.

A study on digital locking device design using detection distance 13.4mm of human body sensing type magnetic field coil (인체 감지형 자기장 코일의 감지거리 13.4mm를 이용한 디지털 잠금장치 설계에 관한 연구)

  • Lee, In-Sang;Song, Je-Ho;Bang, Jun-Ho;Lee, You-Yub
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.1
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    • pp.9-14
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    • 2016
  • This study evaluated a digital locking device design using detection distance of 13.4mm of a human body sensing type magnetic field coil. In contrast to digital locking devices that are used nowadays, the existing serial number entering buttons, lighting, number cover, corresponding pcb, exterior case, and data delivery cables have been deleted and are only composed of control ON/OFF power switches and emergency terminals. When the magnetic field coil substrates installed inside the inner case detects the electric resistance delivered from the opposite side of the 12mm interval exterior contacting the glass body part, the corresponding induced current flows. At this time, the magnetic field coil takes the role as a sensor when coil frequency of the circular coil is transformed. The magnetic coil as a sensor detects a change in the oscillation frequency output before and after the body is detected. This is then amplified to larger than 2,000%, transformed into digital signals, and delivered to exclusive software to compare and search for embedded data. The detection time followed by the touch area of the body standard to a $12.8{\emptyset}$ magnetic field coil was 30% contrast at 0.08sec and 80% contrast at 0.03sec, in which the detection distance was 13.4mm, showing the best level.

Effect of RF power on the Electrical, Optical, and Structural Properties of ITZO (In-Sn-Zn-O) Thin Films (RF 파워 변화에 따른 ITZO (In-Sn-Zn-O) 박막의 전기적, 광학적, 구조적 특성)

  • Seo, Jin-Woo;Joung, Yang-Hee;Kang, Seong-Jun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.2
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    • pp.394-400
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    • 2014
  • In this study, we fabricated ITZO thin films on glass substrates with various RF power from 30 to 60W and investigated the electrical, optical and structural properties. ITZO thin film deposited at 50W exhibited the largest figure of merit ($10.52{\times}10^{-3}{\Omega}^{-1}$) and then its resistivity and sheet resistance were $3.08{\times}10^{-4}{\Omega}-cm$ and $11.41{\Omega}/sq.$, respectively. As results of optical characterization, average transmittance of all ITZO thin films were over 80%. ITZO thin films had amorphous structure regardless of the RF power. The FESEM and AFM results showed that all ITZO thin films have a very smooth surface having no cracks and defects and the film deposited at 50W exhibit the smallest surface roughness of 0.254nm. We found that a amorphous ITZO thin film is a very promising material for replacing ITO in the next display device such as OLED.

Roles of i-SiC Buffer Layer in Amorphous p-SiC/i-SiC/i-Si/n-Si Thin Film Solar Cells (비정질 p-SiC/i-SiC/i-Si/n-Si 박막 태양전지에서 i-SiC 완충층의 역할)

  • Kim, Hyun-Chul;Shin, Hyuck-Jae;Lee, Jae-Shin
    • Korean Journal of Materials Research
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    • v.9 no.12
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    • pp.1155-1159
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    • 1999
  • Thin film solar cells on a glass/$SnO_2$ substrate with p-SiC/i-Si/n-Si heterojunction structures were fabricated using a plasma-enhanced chemical-vapor deposition system. The photovoltaic properties of the solar cells were examined with varying the gas phase composition, x=$CH_4/\;(SiH_4+CH_4)$, during the deposition of the p-SiC layer. In the range of x=0~0.4, the efficiency of solar cell increased because of the increased band gap of the p-SiC window layer. Further increase in the gas phase composition, however, led to a decrease in the cell efficiency probably due to in the increased composition mismatch at the p-SiC/i-Si layers. As a result, the efficiency of a glass/$SnO_2$/p-SiC/i-SiC/i-Si/n-Si/Ag thin film solar cell with $1cm^2$ area was 8.6% ($V_{oc}$=0.85V, $J_{sc}$=16.42mA/$cm^2$, FF=0.615) under 100mW/$cm^2$ light intensity.

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