• Proceedings of the KIEE Conference
• /
• 2003.07c
• /
• pp.1719-1721
• /
• 2003

In this paper, electrical characteristics of inductively coupled plasma in an electrodeless fluorescent lamp were investigated using a Langmuir probe with a variation of Ar gas pressure. The RF output was applied in the range of 5-50W at 13.56MHz. The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of -100V ${\sim}$ +100V. When the pressure of Ar gas was increased, electric current was decreased. There was a significant electric current increase when the applied RF power was increased from 10 W to 30 W. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

• Proceedings of the KIEE Conference
• /
• 2004.11a
• /
• pp.187-190
• /
• 2004

In this work, we investigated etching characteristics and mechanism of BST thin films using $Cl_2$/Ar, $CF_4/Cl_2$/Ar and $BCl_3/Cl_2$/Ar gas mixtures using inductively coupled plasma (ICP) system. A chemically assisted physical etch of BST was experimentally confirmed by ICP under various gas mixtures. The etch rate of the BST thin films had a maximum value at 20 $BCl_3$ and 10% $CF_4$ gas concentration, and decreased with further addition of $BCl_3$ or $CF_4$ gas, because $BaCl_x$, $SrCl_x$, $BaF_x$ and $SrF_x$ compounds have higher melting and boiling points. The maximum etch rate of the BST thin films was 57nm/min at the 30% $Cl_2(Cl_2+Ar)$. The characteristics of the plasma were analyzed by using OES and Langmuir probe.

• Journal of the Korean institute of surface engineering
• /
• v.45 no.2
• /
• pp.75-80
• /
• 2012

A sputter-sublimation source was tested for high rate deposition of protective coating of PEMFC(polymer electrolyte membrane fuel cell) with high electrical conductivity and anti-corrosion capability by DC biasing of a metal rod immersed in inductively coupled plasma. A SUS(stainless steel) tube, rod were tested for low thermal conductivity materials and copper for high thermal conductivity ones. At 10 mTorr of Ar ICP(inductively coupled plasma) with 2.4 MHz, 300 W, the surface temperature of a SUS rod reached to $1,289^{\circ}C$ with a dc bias of 150 W (-706 V, 0.21 A) in 2 mins. For 10 min of sputter-sublimation, 0.1 gr of SUS rod was sputter-sublimated which is a good evidence of a high rate deposition source. ICP is used for sputter-sublimation of a target material, for substrate pre-treatment, film quality improvement by high energy particle bombardment and reactive deposition.

• Proceedings of the KIEE Conference
• /
• 1994.11a
• /
• pp.281-283
• /
• 1994

The impedance characteristics of planar ICP have been measured and compared with the theoretical results obtained by the field equation. The resistance of the total impedance had a maximum point and the inductance decreased monotonically as the electron density increased from $2.5{\times}10^{10}cm^{-3}$ to $7{\times}10^{11}cm^{-3}$ and the Pressure from 1mT to 50mT. The impedance characteristics were also dependent on the profile of the electron density. The effective collision frequency, ${\nu}_{eff}$ was $9.0{\times}10^6Hz$ at 5mT and $.5{\times}10^7Hz$ at 100mT. The effective collision frequency at 5mT was not so different from that at 100mT and it is doe to the reduction of the discharge channel cross-section at high pressure. The estimated effective collision frequency from the simulation data was of the same order as the measured one.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.220-223
• /
• 2004

Inductively coupled plasma is commonly used for electrodeless lamp due to its ease of plasma generation. Optical characteristics significantly depend on the RF power and gas pressure of the plasma. This paper describes the measurement of luminance as a function of RF power and gas pressure with a goal of finding optimal operating conditions of the electrodeless lamp. The gas pressure was varied from 10[mTorr] to 300[mTorr] or 500[mTorr] and the RF power was varied from 10[W] to 200[W]. It was found that the luminance tends to be decreased when argon and neon pressure is increased, and the luminance is increased as RF power is increased. It was also found that the luminance per unit RF power is high when the argon and neon pressure is low and when the RF power is in the range of $30[W]{\sim}40[W]$ or 10[W].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.6
• /
• pp.445-448
• /
• 2011

In this study, the etching characteristics of $Al_2O_3$ thin films were investigated using an ICP (inductively coupled plasma) of $BCl_3$/Ar gas mixture. The etch rate of $Al_2O_3$ thin films as well as the $SiO_2/Al_2O_3$ etch selectivity were measured as functions of $BCl_3$/Ar mixing ratio (0~100% Ar) at a constant gas pressure (10 mTorr), total gas flow rate (40 sccm), input power (800 W) and bias power (100 W). The behavior of the $Al_2O_3$ etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. To analyze the etching mechanism using DLP (double langmuir probe), OES (optical emission spectroscopy) and surface analysis using XPS (x-ray photoelectron spectroscopy) were carried out.

• Journal of the Korean institute of surface engineering
• /
• v.55 no.2
• /
• pp.70-76
• /
• 2022

In this paper, we compared the properties of the chromium nitride (CrN) films prepared by inductively coupled plasma magnetron sputtering (ICPMS). As a comparison, CrN film prepared by a direct current magnetron sputtering (dcMS) is also studied. The crystal structure, surface and cross-sectional microstructure and composite properties of the as-deposited CrN films are compared by x-ray diffraction, field emission scanning electron microscopy, nanoindentation tester and corrosion resistance tester, respectively. It is found that the as-deposited CrN films by ICPMS grew preferentially on (200) plane when compared with that by dcMS on (111) plane. As a result, the films deposited by ICPMS have a very compact microstructure with high hardness: the nanoindentation hardness reached 19.8 GPa and 13.5 GPa by dcMS, respectively. Besides, the residual stress of CrN films prepared by ICPMS is also relatively large. After measuring the corrosion resistance, the corrosion current of films prepared by ICPMS was three order of magnitude smaller than that of CrN films deposited by dcMS.

• Journal of the Mineralogical Society of Korea
• /
• v.23 no.2
• /
• pp.107-115
• /
• 2010

Removal and mineralization of dissolved uranium by bacteria in KURT (KAERI Underground Research Tunnel), Korea Atomic Energy Research Institute (KAERI) was investigated. Two different bacteria, IRB (iron-reducing bacteria) and SRB (sulfate-reducing bacteria) was used, and minerals formed by these bacteria were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Compared to uranyl ions, ferric ions were preferentially reduced by IRB, showing that there is no significant reduction and removal of uranium. However, uranium concentration considerably decreased by addition of Mn(II). Results show that a sulfide mineral such as mackinawite (FeS) is formed by SRB respiration through combination of Fe(II) and S without manganese sulfide formation. In the presence of Mn(II), however, uranium is removed effectively, suggesting that the sorption and incorporation of uranium could be affected by Mn(II) onto the sulide minerals.

• Analytical Science and Technology
• /
• v.26 no.6
• /
• pp.375-380
• /
• 2013

Ammonium biflouride ($NH_4HF_2$) digestion was studied for germanium analysis in rock and sediment by inductively coupled plasma mass spectrometry (ICP/MS). QLO-1 and SDO-1 are used for reference materials from USGS. Sediment, basalt and ball clay for GeoPT were chosen as real samples. The loss of germanium in open vessel digestion was well known which can be caused by easy transformation to volatile compounds. But ammonium bifluoride digestion could suppress loss of germanium in open vessel digestion. Germanium recovery was not influenced by hydrogen peroxide with ammonium bifluoride digestion. Furthermore, the new method was simple and rapid in germanium analysis by ICP/MS. MDL(method detection limit) was 0.015 ${\mu}g/g$ and germanium recovery was 106~128%.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.331-331
• /
• 2012

InGaN/GaN 양자우물 LED소자의 내부양자효과 및 외부양자효과를 높이기 위해 많은 연구자들이 노력을 하고 있다. InGaN/GaN 양자우물 전광소자의 효율을 높이는 방법으로는 무분극 박막성장을 이용한 양자우물의 운반자 파동함수의 분리를 감소시키는 방법, 양자우물 위에 전자 차단층을 성장시키는 방법, 박막의 비발광 결함을 감소시키는 방법, 나노박막 또는 나노 입자를 이용한 표면 플라즈몬 효과를 이용하는 방법 등이 있다[1-3]. 본 연구에서는 은(Ag) 나노입자를 이용하여 InGaN/GaN 양자우물과 p-GaN 덮개층을 패턴에칭한 후, 그 위에 Ag 나노입자를 도포하여 표면 플라즈몬 효과를 이용한 InGaN/GaN 양자우물의 발광효율을 높이고자 하였다. c-면 방향의 사파이어에 유기화학금속증착법(MOCVD)으로 n-형 GaN를 2.0 ${\mu}m$ 성장한 후 그 위에 InGaN/GaN 양자우물 5층을 성장하였다. 또한 전자 차단층으로 AlGaN를 7 nm 증착한 후, p-type GaN를 100 nm 성장하였다. p-type GaN를 패턴하기 위해 포토리소그래피 와 유도결합 플라즈마 에칭공정을 거쳐 선 패턴을 형성하였는데, 이 때 에칭된 p-GaN 깊이는 약 90 nm 이었다. 에칭한 패턴크기가 LED소자의 전기적 및 광학적 특성에 미치는 영향을 알아보기 위해 전류-전압 측정과 photoluminescence 측정을 하였다. 그 후 급속열처리방법을 이용한 Ag 나노입자 형성과 표면플라즈몬이 소자의 발광효율에 미치는 영향에 대해 조사하였다.