• Korean Journal of Materials Research
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• v.3 no.3
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• pp.230-236
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• 1993

We have the homoepitaxiallayers on the surfaces of Si(111) with and without the adsorbed surfactants, for example, Ag or Sn. In this paper, We have studied the difference of growth for these two cases by the observation of intensity oscillations of RHEED specular spots during the growing processes. In the case of growth without the adsorbed surfactants, the Si atoms fill first the stacking fault layer of Si(111) 7 ${\times}$7 structure. Therefore, the irregular oscillations are observed in the early stage of growing process. However, in the case of growth with the adsorbed surfactants, the surfactants already have the ${\sqrt}{3}$ ${\times}$ ${\sqrt}{3}$ structures on the surfaces of Si(111) at the adjucate temperatures of 300`$600^{\circ}C$ and 190~$860^{\circ}C$ for the surfactants of Ag and Sn, respectively. We also find that the number of oscillations is a little larger for the case of growth with the adsorbed surfactants. The reason for this is that for the case of growth with the adsorbed surfactants, the activation energies of Si atoms decrease due to the segregation of surfactants toward the growing surfaces.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.312-316
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• 2000

A study has been made to investigate the effects of hot isostatic pressing(HIP ping) on bond strength and elevated temperature characteristics of thermal barrier coating(TBC). The specimens were prepared by HIPping of TBC which is composed of the ceramic top coat(8wt%$Y_2$$O_3$-$ZrO_2$) and the metallic bond coat on the matrix of IN738LC superalloy. The results showed that the porosity and microcracks in the ceramic top coat of TBC were significantly decreased by HIP. As a result, the bond strength of the HIPped coating was increased above 48% compared to that of as-coated specimen and microstructure was homogenized. It was found that the thermal cycle resistance of HIPped coating was inferior to that of as-coated specimen. It was considered that this result was mainly caused by the reduction of internal defects in the top coat layer which could play a role in relaxing the thermal stress due to a large difference in thermal expansion between TBC and matrix.

• Journal of the Korean Magnetics Society
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• v.12 no.5
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• pp.179-183
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• 2002

Fe-Si-C alloy system has been made by mechancial alloying process. The structural and magnetic properties were analysed as a function of processing times. The structural properties were investigated by X-ray diffraction and EXAFS experiments. The magnetic properties were measured by vibrating sample magnetometer and M ssbauer spectroscopy. As processing time increases, Si and C atoms diffuse into a ${\alpha}$-Fe structure and then bcc solid solution is formed after 12 hours of the processing time. The magnetization and the hyper fine field decreased steeply up to 4 hours and then it changed slowly. After 12 hours of the processing time, it almost saturated. These results were agreed with the structural variation.

• Korean Journal of Materials Research
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• v.3 no.6
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• pp.638-644
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• 1993

The degradation of dielectric breakdown field of 8nm-thick gate oxide ($SiO_2$) for Tipolycide MOS(meta1-oxide-semiconductor) capacitor with different annealing conditions and thickness of the polysilicon film on gate oxide was investigated. The degree of degradation in dielectric breakdown strength of the gate oxide for Ti-polycide gate became more severe with increasing annealing temperature and time, especially, for the case that thickness of the polysilicon film remained on the gate oxide after silicidation was reduced. The gate oxide degradation may be occurred by annealing although there is no direct contact of Ti-silicide with gate oxide. From SIMS analysis, it was confirmed that the degration of gate oxide during annealing was due to the diffusion of titanium atoms into the gate oxide film through polysilicon from the titanium silicide film.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.278-279
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• 2012

최근 들어 세계적인 고유가 행진과 화석연료 고갈에 대응하기 위하여 대체 에너지원 발굴에 대한 필요성이 높아지고 있다. 그 중 CIGS 박막 태양전지는 미래 신재생 에너지 자원의 가장 유망한 후보군 중 하나이다. 기존의 Si 기반의 태양전지의 경우 시간경과에 따른 효율 저하, 높은 재료비, 복잡한 공정으로 인하여 대량생산이 힘든 단점을 가지고 있다. 반면 박막 태양전지의 경우 생산 원가를 낮출 수 있는 태양전지 제조기술로서는 2세대 태양전지로 불리우며, 에너지 변환 효율과 생산 원가에서 우월성을 가진다. 그리고 이러한 CIGS 박막 태양전지를 단일 CIGS 타겟을 이용하여 스퍼터링 공정으로 제작하면 기존에 사용되었던 동시 증발법에 비해서 간단하고 대면적 코팅 및 대량 생산이 가능하다. 본 연구에서 사용된 기판으로는 $25{\times}25mm$ 크기의 Soda Lime Glass (SLG) 위에 DC 마그네트론 스퍼터링 공정으로 Mo가 $1{\mu}m$ 증착된 시편을 이용하여, 2 inch 단일 CIGS 타겟 (MATERION, CIGS Target 25-17.5-7.5-50 at%)을 기판 가열하여 증착하였다. RF 파워는 80 W, 기판 온도는 RT, 100, 200, 300, $400^{\circ}C$로 가열 후 증착하였고, CIGS 박막의 두께는 약 $1{\mu}m$로 일정하게 하였다. CIGS/Mo 박막의 파워별 미세구조 분석을 위해 X-ray Diffraction (XRD, BRUKER GADDS)로 측정하였으며, 박막의 결정립 크기를 확인하기 위해 Field Emission Scanning Electron Microscopy (FE-SEM, HITACHI)을 사용하여 측정하였다. 조건별 박막의 조성 분석 및 표면조도는 Energy Dispersive X-ray Spectroscopy (EDS, HORIBA 7395-H)와 Atomic Force Microscopy (AFM)을 이용하여 각각 평가하였다. 마지막으로 광학적 특성을 평가하고 박막의 밴드갭 에너지를 계산하기 위해서 190 nm에서 1,100 nm의 영역 대에서 자외선 광학 측정기(UV-Vis, HP-8453, AGLIENT)로 투과도를 측정하여 밴드갭 에너지를 계산하였다. 증착된 CIGS 박막은 기판 온도가 증가함에 따라 결정립 크기가 커지는 경향을 보였다. 이는 기판 상에 도달한 스퍼터 원자의 확산 에너지 증가로 인한 것으로 생각되어진다. 또한, 기판온도에 따른 결정립 성장 변화는 4성분계의 박막의 조성 및 핵생성 밀도와 관련되어 설명되어질 것이다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.7
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• pp.47-59
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• 1993

The thermal stability of "stuffed" TiN/Ti barrier matals with different annealing history has been studied to improve the contact reliability of Al/Si contacts in 16M DRAM. The annealing conditions before the Al deposition such as film thickness, the annealing temperature and the annealing ambient have been varied. For TiN(900A)/Ti(300A) annealed at 450 in nitrogen ambient to form a "stuffed barrier" by inducing oxygen atoms into grain boundaries, there is no observation of Al penetrations into Si substrates after the post heat treatment of up to 700 even though there are massive amounts of Al found in TiN film after the post heat treatment of 600 indicating that TiN has a "sponge-like" function due to its ability to absorb several amounts of aluminum at elevated temperature. The TiN/Ti diffusion barrier annealed at 550 has, however, failed after the post heat treatment at 600. The thinner diffusion barriers with TiN(300A)/Ti(100A) failed after the post heat treatment at 600.he post heat treatment at 600.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.167.2-167.2
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• 2015

고 이동도(~10 cm/Vs), 낮은 공정온도 및 높은 투과율 등의 특성을 갖는 산화물 반도체는 저 소비전력, 대면적화 및 고해상도 LCD Panel에 적합한 재료로서 현재 일부 Mobile Panel 및 TFT-LCD Panel의 양산에 적용되고 있으나, 향후 UHD급(4 K, 8 K)의 대형, 고해상도 Panel에의 적용을 위해서는 30 cm2/Vs 이상의 고 이동도 재료의 개발 및 저 저항 배선의 적용에 따른 소자 신뢰성의 개선이 필요하다. Cu는 대표적인 저 저항 배선 재료로 일부 양산에 적용되고 있으나, Cu 전극과 산화물 반도체의 계면에서 Cu원자의 확산 및 Cu-O 층의 형성에 의한 소자 특성 저하의 문제가 있다. 본 연구에서는 고 이동도의 In doped-ZTO계 산화물 반도체를 기반으로 채널 층과 Cu source-Drain layer의 계면에서의 Cu element의 거동 및 TFT 소자 특성과의 상관관계를 고찰하고, 계면에 형성된 Cu-O layer에 대해 높은 전자 친화도를 갖는 Ca element를 첨가에 의한 TFT 소자 특성의 변화를 관찰하였다. 본 연구에서는 이러한 효과로 인한 소자 신뢰성의 향상을 기대하였으며, 우선 In doped-ZTO 채널 층에 Cu와 CuCa 2at% source-drain을 적용한 TFT 특성을 확인하였다. 그 결과, Cu는 Field-effect mobility: ~17.67 cm2/Vs, Sub-threshold swing: 0.76 mV/decade 및 Vth:, 4.40 V의 결과가 얻어졌으며 CuCa 2at%의 경우 Field-effect mobility: ~17.84 cm2/Vs, Sub-threshold swing: 0.86 mV/decade 및 Vth:, 5.74 V의 결과가 얻어졌다. 소자신뢰성 측면에서도 Bias Stress의 변화량 ${\delta}Vth$의 경우 Cu : 4.48 V에 대해 CuCa 2at% : 2.81 V로 ${\delta}Vth$:1.67 V의 개선된 결과를 얻었다.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.84-90
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• 2005

The influence of plasma parameters on the growth of $In_{0.2}Ga_{0.8}N/GaN$ heterostructures has been investigated using plasma-assisted molecular beam epitaxy. Since plasma ejects plenty of energetic particles with different energy levels and flux density at various rf power levels, plasma modulated both growth rate and optical properties significantly. For instance, surface roughness and the emission spectrum of photoluminescence were degraded at low and high rf power. According to sharp interfaces between epitaxial films and strong peaks observed from photoluminescence spectra, our experimental setup presented optimal operation range of rf powers at around 400W. The phenomena could be explained by the presence of energetic particles modulating the rate of plasma stimulated desorption and surface diffusion, and energetic particles exceeding critical value resulted in the incorporation of defects at subsurface. The optimal rf power regime increased by 100W for $In_{0.2}Ga_{0.8}N/GaN$ growth in comparison with GaN. The effects of rf power were discussed in conjunction with kinetic processes being stimulated by energetic particles.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.615-618
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• 2003

This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(l00) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820 $^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0$\times$10$^{-6}$ and 2.3$\times$10$^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785 $^{\circ}C$. Whereas, PO$_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$_{c}$(onset) of about 90 K and T$_{c}$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$ was observed in all of the obtained films.lms.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.3
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• pp.39-45
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• 2016

In this paper, prcess modeling of germanium condensation has been performed and a germanium PMOSFET having nanowire channel implented by the condensation process has been designed and characterized by device simulations. Based on the previous experimental results, our modeling results demonstrate that the ratio of germanium concentration at the silicon germanium-silicon dioxide interface ($C_S$) to that in the bulk region ($C_B$) which are obtainable during the germanium condensation is approximately 4.03 and the effective diffusion coefficient ($D_{eff}$) of germanium atom is $3.16nm^2/s$. Furthermore, a germanium nanowire-channel PMOSFET having the ultra-thin germanium channel on the silicon core that can be fabricated by the germanium condensation has been designed and characterized. As the result, it is confirmed that the proposed device having the coaxial nanowire consisting of silicon core and germanium channel might have superior performances over the device with either all-silicon or all-germanium channel.