• Journal of the Korean Society of Propulsion Engineers
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• v.26 no.6
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• pp.21-27
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• 2022

C_f/SiC composites have low density, high mechanical strength, and good thermal stability, making them promising materials for high-temperature applications such as rocket propulsion and military fields. However, the remaining Si deteriorates physical and thermal properties. In this paper, the de-siliconization was introduced as a method to remove the Si of the C_f/SiC composite fabricated through Liquid Silicon Infiltration(LSI) process. The stability of composite has been tested under an oxyacetylene torch flame for up to 5 minutes. The oxidized surface and cross section of specimens were characterized by 3D scanning, X-ray diffraction(XRD), Optical microscope(OM) and Scanning electron microscope(SEM).

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1710-1712
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• 1999

암모니아가스에 민감한 In이 도핑된 ZnO(ZnO:In) 박막을 In 박막$(100{\AA})$ 및 ZnO박막$(3000{\AA})$의 연속적인 증착과 열처리공정을 통하여 제조하고, 이와 같은 방법으로 Al과 In이 도핑된 ZnO (ZnO:Al, In) 박막을 In 박막과 ZnO:Al 박막의 연속적인 증착과 같은 조건에서의 열처리를 통하여 제조하였다. 기판은 $1000{\AA}$의 산화막이 열적으로 성장되어 있는 Si 기판을 사용하였다. In/ZnO 및 In/ZnO:Al 박막 이중층의 열처리온도에 따른 구조적 및 전기적 특성을 x-선회절기, 주사전자현미경, 오제전자분광법 및 4점측정시스템을 통하여 조사하였다. 이들 막에 대하여 열처리온도에 따른 암모니아가스에 대한 감도, 선택성 및 시간응답특성을 구하였다. 열처리온도 $400^{\circ}C$, 동작온도 $300^{\circ}C$에서 100 ppm의 암모니아가스를 주입한 결과 140 %의 최대감도를 나타내었으며 CO, $NO_x$ 가스에 대한 감도는 아주 낮은 것으로 나타났다.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.865-869
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• 2002

We investigated the reaction stability of titanium, cobalt and their bilayer films with side-wall spacer materials of SiO$_2$ for the salicide process. We prepared Ti 350 $\AA$, Co 150 $\AA$, Co 150 $\AA$/Ti 100 $\AA$ and Ti 100 $\AA$/Co 150 $\AA$ films on 1000 $\AA$-thick thermally grown SiO$_2$ substrates, respectively. Then the samples were rapid thermal annealed at the temperatures of $500^{\circ}C$, $600^{\circ}C$, and $700^{\circ}C$ for 20 seconds. We characterized the sheet resistance of the metallic layers with a four-point probe, surface roughness with scanning probe microscope, residual phases with an Auger depth profilometer, phase identification with a X-ray diffractometer, and cross-sectional microstructure evolution with a transmission electron microscope, respectively. We report that Ti reacted with silicon dioxide spacers above $700^{\circ}C$, Co agglomerated at $600^{\circ}C$, and Co/Ti, Ti/Co formed CoTi compound requiring a special wet process.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.35-43
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• 1995

To obtain high quality of $Ta_{2}O_{5}$ film, two dielectric layers of $Si_{3}N_{4}$ and $Ta_{2}O_{5}$ were subsequently formed on Si wafer. Silicon nitride films were thermally grown in 10 Torr ammonia ambient by R.F induced heating system. The thickness of thermally grown $Si_{3}N_{4}$ film was able to be controlled in the range of tens $\AA$ due to the self-limited growth property. $Ta_{2}O_{5}$ film of 200$\AA$ thickness was then deposited on the as-grown $Si_{3}N_{4}$ film about 25$\AA$ thickness by sputtering method and annealed at $900^{\circ}C$in $O_{2}$ ambient for 1hr. Stoichiometry film was prepared by the annealing in oxygen ambient. Despite the high temperature anneal process, silicon oxide layer was not grown at the interface of the layered films because of the oxidation barrier effect of Si$_{3}$N$_{4}$ film. The fabricated $Ta_{2}O_{5}$/$Si_{3}N_{4}$ film showed low leakage current less than several nA and high dielectric breakdown strength.

• Journal of Environmental Science International
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• v.26 no.11
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• pp.1201-1208
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• 2017

Oxidative degradation of chlorinated ethenes was carried out using heat-activated persulfate. The activation rate of persulfate was dependent on the temperature and the activation reaction rate could be explained based on the Arrhenius equation. The activation energy of persulfate was 19.3 kcal/mol under the assumption that the reaction between the sulfate radical and tricholoroethene (TCE) is very fast. Activation could be achieved at a moderate temperature, so that the adverse effects due to high temperature in the soil environment were mitigated. The reaction rate of TCE was directly proportional to the concentration of persulfate, indicating that the remediation rate can be controlled by the concentration of the injected persulfate. The solution was acidized after the oxidation, and this was dependent on the oxidation temperature. The consumption rate of persulfate was high in the presence of the target organic, but the self-decomposition rate became very low as the target was completely removed.

• Journal of the Korean Society of Propulsion Engineers
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• v.20 no.3
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• pp.25-31
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• 2016

This research investigated the manufacturing process and characteristics analysis of ZPP(Zirconium Potassium Perchlorate) as pyrotechnic are commonly found in the aerospace, defense, and automotive industries. A solid pyrotechnic mixture is composed of an oxidizing agent, fuel, and binder. Precipitation process was used to uniformly mix the raw material. Through the analysis of the material characteristics and thermal response is designed optimum ratio by NASA CEA program. It was compared by performing the evaluation of these size, shape and calorimetry characteristics.

• Proceedings of the Korea Contents Association Conference
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• 2003.05a
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• pp.291-297
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• 2003

With the development of information communication technology, the demands for various, profound and advanced information on science and technology and the necessity for establishing science and technology information infrastructure with the aim of future oriented industry are ever increasing. Advanced countries are providing material property DB as well as bibliographic DB though the Internet. Establishment and dissemination of bibliographic DB at domestic is properly settled but research on material property DB is much to be desired. Accordingly, development and research on material property DB to construct the information infrastructure in science and technology are highly necessary. In this study, we have developed superconducting materials property DB which is highly advanced industry field in future. We provide the thermal and mechanical, and superconducting property data for oxide superconductors, and the database is designed by bibliographic information, material information and material property information section.

• Polymer(Korea)
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• v.24 no.2
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• pp.276-280
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• 2000

A conductive poly(acrylonitrile)/polypyrrole composite fabric was prepared. A conductive composite was prepared by the impregnation of PAN fabric into a mixed solution of pyrrole and oxidant in order to induce the in-situ polymerization of a conducting polymer into the matrix fabric. In the composite formation, the reaction condition was optimized to achieve the best properties, and the effect of the externally-added arylsulfonate dopants on the physical properties was examined. As a result, the best properties of electrical conductivity, thermal stability, and fastness to washing, was observed in the composite containing an antraquinonesulfonate (AQSA) dopant.

• Transactions of the Korean hydrogen and new energy society
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• v.14 no.4
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• pp.298-304
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• 2003

The thermal behavior of $NiFe_2O_4$ prepared by a solid-state reaction was investigated for $H_2$ generation by the thermochemical cycle. The reduction of $NiFe_2O_4$ started from $800^{\circ}C$, and the weight loss was 0.2-0.3 wt% up to $1000^{\circ}C$. In the $H_2O$ decomposition reaction, $H_2$ was generated by oxidation of reduced $NiFe_2O_4$. The crystal structure of $NiFe_2O_4$ maintained during the redox reaction of 5 cycles. From this observation, the lattice oxygen in $NiFe_2O_4$ is released without the structural change during the thermal reduction and oxygen deficient $NiFe_2O_4$ can be restored to the spinel structure of $NiFe_2O_4$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.179-179
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• 2010

다양한 분야에서 확산 방지막은 소자의 신뢰성 향상에 중요한 역할을 하고 있다. 최근 반도체에 적용되기 시작한 구리 배선 형성 공정에서도 실리콘이나 실리콘 산화막으로 구리가 확산하는 것을 방지하는 기술이 중요한 부분을 차지하고 있다. 기존 physical vapor deposition (PVD)법을 이용한 $TaN_x$ 확산 방지막 형성 기술이 성공적으로 적용되고 있으나 반도체의 최소선폭이 지속적으로 감소함에 따라 한계에 다다르고 있다. 20 nm 급과 그 이하의 구리 배선을 위해서는 5 nm 이하의 매우 얇고 높은 피복 단차율을 가진 확산 방지막 형성 기술이 요구된다. 또한, 요구 두께의 감소에 따라 더 우수한 확산 방지 특성이 요구된다. Atomic layer deposition (ALD)은 박막의 정교한 두께 조절이 가능하며 높은 종횡비를 가지는 구조에서도 균일한 박막 형성이 가능하다. 이번 연구에서는 다른 질소 함량을 가진 $TaN_x$ 박막을 Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT) 전구체와 $H_2+N_2$ 반응성 플라즈마를 사용하여 plasma enhanced atomic layer deposition (PEALD) 법으로 형성하였다. 박막 내질소 함량에 따라 $TaN_x$의 상 (phase)과 미세구조 변화가 관찰되었고, 이러한 물성의 변화는 확산 방지 특성에 영향을 주었다. TEM (Transmission electron microscopy)과 SEM (scanning electron microscope), XPS (x-ray photoelectron spectroscopy)를 통해 $TaN_x$의 물성을 분석하였고, 300 도에서 700 도까지 열처리 후 XRD (x-ray deffraction)와 I-V test를 통해 확산 방지막의 열적 안정성이 평가되었다. PEALD를 통해 24 nm 크기의 trench 기판 위에 약 4 nm의 $TaN_x$ 확산 방지막이 매우 균일하게 형성할 수 있었으며 향후 구리 배선에 효과적으로 적용될 것으로 예상된다.