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Enhanced Oxidation Resistance of LSI-Cf/SiC Composite by De-siliconization

탈규소화를 통한 LSI-Cf/SiC 복합재료의 내산화성 향상

  • Jung Hwan Song (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Jung Hoon Kong (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Seung Yong Lee (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Young Il Son (Agency for Defense Development) ;
  • Do Kyung Kim (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
  • Received : 2022.10.05
  • Accepted : 2022.12.05
  • Published : 2022.12.31

Abstract

Cf/SiC composites have low density, high mechanical strength, and good thermal stability, making them promising materials for high-temperature applications such as rocket propulsion and military fields. However, the remaining Si deteriorates physical and thermal properties. In this paper, the de-siliconization was introduced as a method to remove the Si of the Cf/SiC composite fabricated through Liquid Silicon Infiltration(LSI) process. The stability of composite has been tested under an oxyacetylene torch flame for up to 5 minutes. The oxidized surface and cross section of specimens were characterized by 3D scanning, X-ray diffraction(XRD), Optical microscope(OM) and Scanning electron microscope(SEM).

Cf/SiC 복합재는 저밀도, 높은 기계적 강도, 우수한 열 안정성을 가지고 있어 로켓 추진기관, 항공 및 군사 분야 등의 고온 응용 산업에 유망한 재료이다. 그러나 용융 실리콘 함침(Liquid Silicon Infiltration, LSI) 공정을 통해 제작된 복합재는 잔존하는 Si에 의하여 물리적, 열적 특성이 저하된다. 본 논문에서는 LSI 공정을 통해 제작된 Cf/SiC 복합재의 내부 Si을 제거하기 위한 방안으로 탈규소화(de-siliconization) 공정을 도입하였다. 최대 5분 동안 옥시아세틸렌 토치 테스트를 진행하고 시편의 산화된 표면과 단면은 3D scanning, X-ray diffraction(XRD), 광학현미경(OM), 전자주사현미경(SEM)으로 분석하였다.

Keywords

Acknowledgement

본 연구는 정부(과학기술정보통신부)의 재원으로 한국연구재단 - 스페이스챌린지사업(NRF-2021M1A3B8078916) 및 방위사업청과 국방과학연구소의 국방 고기동 상층추진기술 특화연구실에서 수행된 사업(UD210022SD)의 지원을 받아 수행된 연구이며 이에 감사드립니다.

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