• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.497-498
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• 2006

Tribological properties of a Magneto-Rheological(MR) fluid in a polishing process are studied. For this polishing process, abrasive wear model is proposed as a function of shear force, normal force and actual mean velocity of MR particles at workpiece surface. Experimental conditions are changed by varying the gap distance between workpiece and tool and the rotational speed of tool. From the experimental results, a modified Stribeck curve is obtained, and the friction coefficient turns out to have linear relationship with a modified Sommerfeld number. The validity of the wear model is supported by additional experiments performed for measuring material removal rates.

• Journal of Korea Society of Industrial Information Systems
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• v.17 no.1
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• pp.1-9
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• 2012

This paper explained about the sludge recycling system which retrieved the silicon and abrasive from solar cell wafer slicing. The basic process of the recycling system was multiple centrifuge and secondary processes of ultra sonic agitation, addition of alcohol-water solution and heating sludge was added for raising separation efficiency. The recycling rate was about 96% and 94% for 2N, 4N silicon respectively. The SiC abrasive recycling rate was about 80%. To retrieve the high purity of 4N silicon, the heat process in vacuum furnace was added to remove remaining impurity components.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.7
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• pp.8-13
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• 2019

As increasing demand for precise machining in advanced disciplines, especially in semi-conductor, aeronautical and automotive industries, the magnetic abrasive deburring(MAD) which is able to eliminate micro-sized burr on complex surface in less time has drawn the attention in the last decades. However, the performance of MAD is subject to shape and size of a tool. Therefore, this study aim to identify deburring behavior of MAD in U-type flow channel by measuring the length rate of burr removal in radial distance of the cylindrical tool under four process factors. In order to evaluate the deburring effect of MAD on the surface, finishing regions are divided based on center of the circular cutting tool. As a results, it was defined that the amount of burr removal in a downward direction moving toward flow channel from the top surface was higher than upward direction. This is because the magnetic abrasives were detached from magnetic lines of force due to geometrical shape.

• Tribology and Lubricants
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• v.37 no.6
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• pp.208-212
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• 2021

Chemical mechanical polishing (CMP) is a key technology used for the global planarization of thin films in semiconductor production and smoothing the surface of substrate materials. CMP is a type of hybrid process using a material removal mechanism that forms a chemically reacted layer on the surface of a material owing to chemical elements included in a slurry and mechanically removes the chemically reacted layer using abrasive particles. Sapphire is known as a material that requires considerable time to remove materials through CMP owing to its high hardness and chemical stability. This study introduces a technology using electrolytic ionization and ultraviolet (UV) light in sapphire CMP and compares it with the existing CMP method from the perspective of the material removal rate (MRR). The technology proposed in the study experimentally confirms that the MRR of sapphire CMP can be increased by approximately 29.9, which is judged as a result of the generation of hydroxyl radicals (·OH) in the slurry. In the future, studies from various perspectives, such as the material removal mechanism and surface chemical reaction analysis of CMP technology using electrolytic ionization and UV, are required, and a tribological approach is also required to understand the mechanical removal of chemically reacted layers.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.206-209
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• 2002

The fixed abrasive pad(FAP) has been introduced in chemical mechanical polishing(CMP) field recently. In comparison with the general CMP which uses the slurry including abrasives, FAP takes advantage of planarity. resulting from decreasing pattern selectivity and defects such as dishing due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of $Al_2$O$_3$-FAP using hydrophilic polymers with swelling characteristic in water and explains the self.texturing phenomenon. It also focuses on the chemical effects on tungsten film and the FAP is evaluated on the removal rate as a function of chemicals such as oxidizer, catalyst, and acid. The removal rate is achieved up to 1000A1min as about 70 percents of the general one. In the future. the research has a plan of the advanced FAP and chemicals in tungsten CMP considering micro-scratch, life-time, and within wafer non-uniformity.

• Proceedings of KOSOMES biannual meeting
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• 2017.04a
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• pp.168-168
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• 2017

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.5
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• pp.761-766
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• 2012

Abrasive fluid jet polishing processes have been used for the polishing of optical surfaces with complex shapes. However, unstable and unpredictable polishing spots can be generated due to the fundamental property of an abrasive fluid jet that it begins to lose its coherence as the jet exits a nozzle. To solve such problems, MR fluid jet polishing has been suggested using a mixture of abrasives and MR fluid whose flow properties can be readily changed according to imposed magnetic field intensity. The MR fluid jet can be stabilized by imposed magnetic fields, thus it can remain collimated and coherent before it impinges upon the workpiece surface. In this study, MR fluid jet polishing characteristics of fused silica glass were investigated according to injection time and magnetic field intensity variations. Material removal rates and 3D profiles of the generated polishing spots were investigated. From the results, it can be confirmed that the developed MR fluid polishing system can be applied for stable and predictable precise polishing of optical parts.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.513-514
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• 2010

• Tribology and Lubricants
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• v.33 no.3
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• pp.106-111
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• 2017

Sapphire is an anisotropic material with excellent physical and chemical properties and is used as a substrate material in various fields such as LED (light emitting diode), power semiconductor, superconductor, sensor, and optical devices. Sapphire is processed into the final substrate through multi-wire saw, double-side lapping, heat treatment, diamond mechanical polishing, and chemical mechanical polishing. Among these, chemical mechanical polishing is the key process that determines the final surface quality of the substrate. Recent studies have reported that the material removal characteristics during chemical mechanical polishing changes according to the crystal orientations, however, detailed analysis of this phenomenon has not reported. In this work, we carried out chemical mechanical polishing of C(0001), R($1{\bar{1}}02$), and A($11{\bar{2}}0$) substrates with different sapphire crystal planes, and analyzed the effect of crystal orientation on the material removal characteristics and their correlations. We measured the material removal rate and frictional force to determine the material removal phenomenon, and performed nano-indentation to evaluate the material characteristics before and after the reaction. Our findings show that the material removal rate and frictional force depend on the crystal orientation, and the chemical reaction between the sapphire substrate and the slurry accelerates the material removal rate during chemical mechanical polishing.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.2
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• pp.49-57
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• 2002

The effect of mechanical parameters on chemical mechanical polishing (CMP) of blanket and patterned aluminum thin films are investigated. CMP process experiments are conducted using the soft pad and the slurry mainly composed of acid solution and A1$_2$O$_3$ abrasive. The result for the blanket film showed that as the concentration of abrasive in slurry is increased, the surface roughness gets worse but the waviness gets better. The planarity of the patterned Al films is slowly improved by CMP when the width of and gap between the patterns are relatively small. It is tried to find the optimized CMP process conditions by that the patterned Al thin film can be planarized with fine surface. The most satisfiable film surface is obtained when the applied pressure is low (10kPa) and the abrasive concentration is relatively high (5wt%).