• Title/Summary/Keyword: 에너지밴드

Search Result 470, Processing Time 0.021 seconds

Influence of AZO Thin Films Grown on Transparent Plastic Substrate with Various Working Pressure and $O_2$ Gas Flow Rate (공정 압력과 산소 가스비가 투명 플라스틱 기판에 성장시킨 AZO 박막에 미치는 영향)

  • Lee, Jun-Pyo;Kang, Seong-Jun;Joung, Yang-Hee;Yoon, Yung-Sup
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.47 no.2
    • /
    • pp.15-20
    • /
    • 2010
  • In this study, AZO (Al: 3 wt%) thin films have been prepared on PES Plastic substrates at various working pressure (5~20 mTorr), $O_2$ gas flow rate(0~3%) and the fixed substrate temperature of 200 f by using the RF magnetron sputtering and their optical and electrical properties have been studied. The XRD measurement shows that AZO thin films exhibit c-axis preferred orientation. From the results of AFM measurements, it is known that the lowest surface roughness (3.49 nm) is obtained for the AZO thin film fabricated at 5 mTorr of working pressure and 3% of $O_2$ gas flow rate. The optical transmittance of AZO thin films is measured as 80% in the visible region. We observe that the energy band gap of AZO thin films increases with decreasing the working pressure and the $O_2$ gas flow rate. This phenomenon is due to the Burstein-Moss effect. Hall measurement shows that the maximum carrier concentration ($2.63\;{\times}\;10^{20}\;cm^{-3}$) and the minimum resistivity ($4.35\;{\times}\;10^{-3}\;{\Omega}cm$) are obtained for the AZO thin film fabricated at 5mTorr of working pressure and 0% of $O_2$ gas flow rate.

The Analysis of the Breakdown Voltage according to the Change of JTE Structures and Design Parameters of 4H-SiC Devices (4H-SiC 소자의 JTE 구조 및 설계 조건 변화에 따른 항복전압 분석)

  • Koo, Yoon-Mo;Cho, Doo-Hyung;Kim, Kwang-Soo
    • Journal of IKEEE
    • /
    • v.19 no.4
    • /
    • pp.491-499
    • /
    • 2015
  • Silicon Carbide(SiC) has large advantage in high temperature and high voltage applications because of its high thermal conductivity and large band gap energy. When using SiC to design power semiconductor devices, edge termination techniques have to be adjusted for its maximum breakdown voltage characteristics. Many edge termination techniques have been proposed, and the most appropriate technique for SiC device is Junction Termination Extension(JTE). In this paper, the change of breakdown voltage efficiency ratio according to the change of doping concentration and passivation oxide charge of each JTE techniques is demonstrated. As a result, the maximum breakdown voltage ratio of Single Zone JTE(SZ-JTE), Double Zone JTE(DZ-JTE), Multiple Floating Zone JTE(MFZ-JTE), and Space Modulated JTE(SM-JTE) is 98.24%, 99.02%, 98.98%, 99.22% each. MFZ-JTE has the smallest and SZ-JTE has the largest sensitivity of breakdown voltage ratios according to the change of JTE doping concentration. Additionally the degradation of breakdown voltage due to the passivation oxide charge is analyzed, and the sensitivity is largest in SZ-JTE and smallest in MFZ-JTE, too. In this paper, DZ-JTE and SM-JTE is the best efficiency JTE techniques than MFZ-JTE which needs large doping concentration in short JTE width.

Synthesis and Characterization of a Series of PtRu/C Catalysts for the Electrooxidation of CO (일산화탄소 산화를 위한 PtRu/C 시리즈 촉매의 합성 및 특성 연구)

  • Lee, Seonhwa;Choi, Sung Mook;Kim, Won Bae
    • Clean Technology
    • /
    • v.18 no.4
    • /
    • pp.432-439
    • /
    • 2012
  • The electrocatalytic oxidation of CO was studied using carbon-supported 20 wt% PtRu (PtRu/C) catalysts, which were prepared with different Pt : Ru atomic ratios from 7 : 3 to 3 : 7 using a colloidal method combined with a freeze-drying procedure. The bimetallic PtRu/C catalysts were characterized by various physicochemical analyses, including X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS). CO stripping voltammetry measurements indicated that the addition of Ru with a Pt catalyst significantly improved the electrocatalytic activity for CO electrooxidation. Among the tested catalysts, the $Pt_5Ru_5/C$ catalyst had the lowest onset potential (vs.Ag/AgCl) and the largest CO EAS. Structural modification via lattice parameter change and electronic modification in the unfilled d band states for Pt atoms may facilitate the electrooxidation of CO.

Characteristics of TiO2 and Ag/TiO2 optical thin film by Co-sputtering method (동시 스퍼터링법에 이용하여 제작한 TiO2와 Ag/TiO2 광학 박막의 특성)

  • Kim, Sang-Cheol;Hahn, Sung-Hong;Kim, Eui-Jung;Lee, Chung-Woo;Joo, Jong-Hyun;Kim, Goo-Cheol
    • Korean Journal of Optics and Photonics
    • /
    • v.16 no.2
    • /
    • pp.168-173
    • /
    • 2005
  • Ag-doped $TiO_2$ thin films were prepared by RF magnetron co-sputtering method, and their physical and chemical properties were examined as a function of calcination temperature. XRD results showed that the crystallite size of Ag-doped films was smaller than that of the $TiO_2$ thin films. SEM results showed that the particle size of $Ag/TiO_2$ film was smaller and more uniform than pure $TiO_2$ film. The films had high transparency in the visible range. The films calcined at $600^{\circ}C$ were the anatase phase, and the films calcined at $900^{\circ}C$ were a mixture of anatase and rutile phases. The absorption edge of films calcined at $900^{\circ}C$ was red-shifted. This is due to the augmented absorption resulting from the phase transformation from anatase to rutile phase. And the transmittance of films decreased by the light scattering and absorption in the films. Photocatalytic activity of $Ag/TiO_2$ thin films was higher than that of the pure $TiO_2$ thin films.

Nano-crystallization Behavior and Optical Properties of Na2O-Nb2O5-TeO2Glasses (1) (Na2O-Nb2O5-TeO2계 유리의 광학적 성질과 나노-결정화거동 (1))

  • 김현규;류봉기;차재민;김병관;이재성
    • Journal of the Korean Ceramic Society
    • /
    • v.40 no.11
    • /
    • pp.1078-1084
    • /
    • 2003
  • In order to develop a new type of nonlinear optical materials or photocatlaysts, Na$_2$O-Nb$_2$ $O_{5}$-Te $O_2$ glasses were prepared using conventional melt quenching method, and the crystallization behaviors and optical properties of these glasses was investigated. The optical and physical properties for Na$_2$O-Nb$_2$ $O_{5}$-Te $O_2$ glasses are: refractive index, n=2.04$\pm$0.04; density, p (g/㎤)=4.87$\pm$0.58; optical energy band of the transmission cut-off wavelength, E$_{0}$ (eV)=3.14$\pm$0.04. The transparent glass ceramics consisting of the nanocrysatls were obtained when the Na$_2$O-Nb$_2$ $O_{5}$-Te $O_2$ glass was first heat-treated at 3$50^{\circ}C$ for 1 h and than at 40$0^{\circ}C$ for 1 h. A cubic crystalline phase consisting of the nano-crysatls transforms into a stable phase at temperature above 47$0^{\circ}C$ for 1 h.

Purification and Properties of the Polyvinyl alcohol oxidase from Xanthomonas campestris J2Y (폴리비닐 알콜 분해균 Xanthomonas campestris J2Y의 Polyvinyl alcohol oxidase 정제 및 성질)

  • Kwoen, Dae-Jun;Jo, Youl-Lae
    • Applied Biological Chemistry
    • /
    • v.39 no.5
    • /
    • pp.349-354
    • /
    • 1996
  • The Polyvinyl alcohol(PVA) oxidase involved in PVA degradation by microorganism has been purified to homogeneity from culture broth of Xanthomonas campestris J2Y grown in a minimal medium containing PVA as a sole carbon source. The enzyme was purified by DEAE-cellulose chromatograpy and Sephadex G-150 gel filtration. The purified PVA oxidase was electrophoretically homogeneous both in the absence and presence of SDS. The molecular weight of the enzyme was estimated to be about 55,000 daltons by SDS-polyacrylamide gel electrophoresis and Sephadex G-150 gel filtration. The native enzyme existed as a monomer. The optimal pH and temperature was shown to be pH 7 and $37^{\circ}C$ respectively. The activity of enzyme was stable below $55^{\circ}C$ and between pH range of $5{\sim}11$. The enzyme activity was significantly inhibited by metal compounds such as $Ag^{2+},\;Hg^{2+}$. While, metal ions such as $Mn^{2+},\;and\;Cu^{2+}$ stimulated the reaction. Km value of the enzyme for PVA was $7.04{\times}10^{-2}mmol/{\ell}$.

  • PDF

Effects of RF power on the Electrical and Optical Properties of GZO Thin Films Deposited on Flexible Substrate (RF 파워가 플렉시블 기판에 성장시킨 GZO 박막의 전기적 및 광학적 특성에 미치는 영향)

  • Joung, Yang-Hee;Kang, Seong-Jun
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.18 no.10
    • /
    • pp.2497-2502
    • /
    • 2014
  • The 5 wt.% Ga-doped zinc oxide (GZO) thin films were fabricated on PES substrates with various RF power 50~80 W by using RF magnetron sputtering in order to investigate the optical and electrical properties of GZO thin films. The XRD measurement showed that GZO thin films exhibit c-axis orientation. At a RF power of 70W, the GZO thin film showed the highest (002) diffraction peak with a Full-Width-Half-Maximum (FWHM) of $0.44^{\circ}$. AFM analysis showed that the lowest surface roughness (0.20 nm) was obtained for the GZO thin film fabricated at 70 W of RF power. The electrical property indicated that the minimum resistivity ($6.93{\times}10^{-4}{\Omega}{\cdot}cm$) and maximum carrier concentration ($7.04{\times}10^{20}cm^{-3}$) and hall mobility ($12.70cm^2/Vs$) were obtained in the GZO thin film fabricated at 70W of RF power. The optical transmittance in the visible region was higher than 80 %, regardless of RF power. The optical band-gap showed the slight blue-shift with increased in carrier concentration which can be explained by the Burstein-Moss effect.

Production of Cyclodextrin Glucanotransferase from Aspergillus sp. CC-2-1 and its Characterization (Aspergillus sp. CC-2-1에 의해 생산되는 Cyclodextrin Glucanotransferase의 생산 및 특성)

  • Cho, Young-Je;Kim, Myoung-Uk
    • Korean Journal of Food Science and Technology
    • /
    • v.32 no.5
    • /
    • pp.1158-1167
    • /
    • 2000
  • To produce ${\beta}-cyclodextrin({\beta}-CD)$, a cyclodextrin glucanotransferase(CGTase) producing Aspergillus sp. CC-2-1 was isolated from soil. The enzyme was purified and its enzymological characteristics were investigated. It was found that production of CGTase reached to the maximum when the wheat bran medium containing 0.1% albumin, 2% $(NH_4)_2S_2O_8$, 2% soluble starch and 0.2% $KH_2PO_4$ was cultured for 5 days at $37^{\circ}C$. The purity of CGTase was increased by 13.14 folds after DEAE-cellulose ion exchange chromatography and Sephadex G-100, G-150 gel filtration and the specific activity was 172.14 unit/mg. Purified enzyme was confirmed as a single band by the polyacrylamide gel electrophoresis. The molecular weight of CGTase was estimated to be 27,800 by Sephadex G-100 gel filtration and SDS-polyacrylamide gel electrophoresis. The optimum pH and temperature for the CGTase activity were 9.0 and $80^{\circ}C$, respectively. The enzyme was stable in pH $8.0{\sim}11.0$ at $60{\sim}80^{\circ}C$. The activity of purified enzyme was activated by $K^+,\;Cu^{2+}$ and $Zn^{2+}$. The activity of the CGTase was inhibited by the treatment with 2,4-dinitrophenol and iodine. The result suggests that the purified enzyme has phenolic hydroxyl group of tyrosine, histidine imidazole group and terminal amino group at active site. The reaction of this enzyme followed typical Michaelis-Menten kinetics with the $K_m$ value of 18.182 g/L with the $V_{max}$ of 188.68 ${\mu}mole/min$. The activation energy for the CGTase was calculated by Arrhenius equation was 1.548 kcal/mol.

  • PDF

Thermoelectric Properties of the Reaction Sintered n-type β-SiC (반응소결법으로 제조한 n형 β-SiC의 열전특성)

  • Pai, Chul-Hoon
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.20 no.3
    • /
    • pp.29-34
    • /
    • 2019
  • Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its large energy band gap and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, electric conductivity of porous n-type SiC semiconductors fabricated from ${\beta}-SiC$ powder at $2000^{\circ}C$ in $N_2$ atmosphere was comparable to or even larger than the reported values of SiC single crystals in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$, while thermal conductivity was kept as low as 1/10 to 1/30 of that for a dense SiC ceramics. In this work, for the purpose of decreasing sintering temperature, it was attempted to fabricate porous reaction-sintered bodies at low temperatures ($1400-1600^{\circ}C$) by thermal decomposition of polycarbosilane (PCS) impregnated in n-type ${\beta}-SiC$ powder. The repetition of the impregnation and sintering process ($N_2$ atmosphere, $1600^{\circ}C$, 3h) resulted in only a slight increase in the relative density but in a great improvement in the Seebeck coefficient and electrical conductivity. However the power factor which reflects the thermoelectric conversion efficiency of the present work is 1 to 2 orders of magnitude lower than that of the porous SiC semiconductors fabricated by conventional sintering at high temperature, it can be stated that thermoelectric properties of SiC semiconductors fabricated by the present reaction-sintering process could be further improved by precise control of microstructure and carrier density.

Brief Review on the preparation of N-doped TiO2 and Its Application to Photocatalysis (질소 도핑 티타니아의 제조와 광촉매 활용의 연구동향)

  • Oh, Kyeongseok;Hwang, Duck Kun
    • Korean Chemical Engineering Research
    • /
    • v.57 no.3
    • /
    • pp.331-337
    • /
    • 2019
  • Titania has become the most applicable material for photocatalytic application. Nevertheless, titania has the weak point in its wide band gap energy that is mainly activated by UV irradiation. There have been vast research challenges in order to make the wide band gap energy of titania narrow that could be activated in the presence of visible light. Various modifications of titania surface were popular because titania needs to change its surface to respond in visible light. Among the methodological approaches, N-doping to titania can be the alternative candidate because it is facile process and eco-friendly. The activated electron from valence band in N-doped $TiO_2$ migrates to conduction band in the presence of visible light irradiation, which shows photocatalytic activity as well. In this study, focused on the evaluation of nitrogen state after N-doping through brief review. Arguments are still existed in nitrogen states and their different effects on photocatalytic activity. In particular, two nitrogen states are generally reported; substitutional and interstitial states. The research articles regarding N-doped $TiO_2$ are continuously appearing because the potential application of water split in visible light is still fascinate. The future of N-doped $TiO_2$ is also presented by referrals based on various literature.