• Transactions of the Korean Society of Automotive Engineers
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• v.25 no.2
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• pp.149-156
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• 2017

Various kinds of accessories(e.g., clock, radio, automatic door locks, alarm devices, etc.) or unit components (e.g., black box, navigation system, alarm, private audio, etc.) require dark current even when the vehicle power is turned off. However, accessories or unit components can be the causes of excessive dark current generation. It results in battery discharge and the vehicle's failure to start. Therefore, immediate detection of abnormal dark current and response are very important for a successful repair job. In this paper, we can increase the maintenance efficiency by presenting a standardized diagnostic process for the measurement of the dark current and the existing problem. As a result of the absence of a system to block the dark current in a vehicle, diagnosis and repair were performed immediately by using a standardized dark current diagnostic process.

• Proceedings of the KIPE Conference
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• 2011.11a
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• pp.67-68
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• 2011

본 논문에서는 Modular Multi-Level Converter(MMLC)의 셀(Cell) 캐패시터(Capacitor) 전압 밸런싱에서 전압맥동 최소화 방법을 제안한다. 암(Arm) 평균 전류를 직류성분으로만 제어 할 경우 기본파 주파수와 2 고조파로 흔들리는 순시전력 항이 셀 캐패시터 전압 맥동을 만든다. 이를 억제 하기위해 암 평균 전류에 2 고조파 교류 성분을 직류성분과 함께 제어하는 방법을 제안한다. 이 방법을 통하여 전압맥동을 줄일 수 있음을 밝히고, 주입되는 2 고조파 전류의 크기와 위상각 계산 방법을 제시한다. 모의실험 결과를 통해 제안된 방법의 유효성을 검증하였다.

• Proceedings of the KIPE Conference
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• 2018.11a
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• pp.163-164
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• 2018

본 논문에서는 새로운 MMC(Modular Multilevel Converter)용 SM(Sub-Module) 시험회로와 이를 제어하기 위한 제어기법을 제안한다. 계통연계형 MMC 시스템에서 한 상의 암(arm)에 흐르는 전류는 계통주파수의 2고조파 성분과 DC 전류를 포함하고 있다. 제안하는 시험회로는 암 전류를 선형적으로 근사화하고, 시험전류의 DC 성분을 제어하여 시험할 SM의 전압을 일정하게 유지한다. 시뮬레이션을 통해 제안하는 SM 시험회로와 제어의 타당성을 검증하였다.

• Journal of radiological science and technology
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• v.33 no.3
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• pp.289-294
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• 2010

The purpose of this study is an evaluation of the performance of a detector under radiographic irradiation condition by fabricating the polycrystalline $HgI_2$ film detector. The polycrystalline $HgI_2$ film detectors with thickness of 210 and $320\;{\mu}m$ were fabricated by screen print technology. Measurements of X-ray sensitivity and dark current were performed for two detectors. And measurements of the linearity of X-ray response and reproducibility were performed for the detector of thickness $320\;{\mu}m$. For applied electric field strengths from 0.05 to $2\;V/{\mu}m$ to the detector of thickness $320\;{\mu}m$, the X-ray sensitivities were measured from 233 to $1,408{\times}106\;electrons/mR{\cdot}mm^2$. And the dark currents were measured from 3.2 to $118\;pA/mm^2$. Compared with values reported by Zhong Su et al., the X-ray sensitivities exhibit about two times larger than the X-ray sensitivities measured by Zhong Su et al. And the dark currents exhibit about nine times larger than the dark currents measured by Zhong Su et al. The linearity of X-ray response acquired 0.988 as a coefficient of correlation (r). Reproducibility acquired 0.002 as a coefficient of variation. This study provides the performance data of fabricated polycrystalline $HgI_2$ film detector available for an active matrix flat panel imager under radiographic irradiation condition.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.3
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• pp.15-30
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• 2004

In this paper, an analytical modeling for the dark and photo-current characteristics of a buried-gate short- channel GaAs MESFET is presented. The presented model shows that the increase of drain current under illumination is largely due to not the increase of photo-conductivity in the neutral region but the narrowing effect of the depletion layer width. The carrier density profile within the neutral region is derived from solving the carrier continuity equation one-dimensionally. In deriving the photo-generated current, we assume that the photo-current is compensated with the thermionic emission current at the gate-channel interface. Moreover, the two-dimensional Poisson's equation is solved by taking into account the drain-induced longitudinal field effect. In conclusion, the proposed model seems to provide a reasonable explanation for the dark and photo current characteristics in a unified manner.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.383-388
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• 1994

Deep levels in semi-insulating GaAs were observed by thermally stimulated current(TSC) measurement In the temperature ranges of 100-300K Tl(E$\_$c/-0.18eV), T2(E$\_$c/-0.20eV), T3(E$\_$c/-0.31eV), T4(E$\_$c/-0.40eV), and T5(E$\_$c/-O.43eV) traps have been observed. The TI, T2, and T5 traps seem to be related to the V$\_$As/, V$\_$Ga/-complex, and As$\_$Ga/$\^$++/ respectively. T4 trap is considered with respect to V$\_$Ga/-V$\_$As/ complex.

• Proceedings of the KIPE Conference
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• 2019.07a
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• pp.303-304
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• 2019

본 논문에서는 모듈러 멀티레벨 컨버터(Modular Multilevel Converter, MMC) 고압직류송전(High Voltage Direct Current, HVDC)의 전도 손실 계산을 위한 반도체 스위치 V-I 특성 곡선 근사 방법을 제안한다. 일반적으로 V-I 특성 곡선은 정격 전류 구간에 대해서만 선형화하여 사용하지만, MMC HVDC의 경우 암 전류의 직류 오프셋에 의해 V-I 특성 곡선의 비선형 구간에서 손실 계산에 오차가 크게 나타난다. 따라서 본 논문에서는 암 전류의 부호에 따라 별도의 V-I 특성 곡선 근사를 적용하여 MMC HVDC의 전도 손실 계산의 정확성을 향상하는 방안을 제안한다. 전도 손실 계산 결과는 PSCAD 시뮬레이션으로 취득한 손실 값과 비교하여 결과를 검증하였다.

• Journal of Biomedical Engineering Research
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• v.25 no.5
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• pp.335-342
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• 2004

This paper describes a trans-admittance scanner for breast cancer detection. A FPGA-based sinusoidal waveform generator produces a constant voltage. The voltage is applied between a hand-held electrode and a scan probe placed on the breast. The scan probe contains an 8x8 array of electrodes that are kept at the ground potential. Multi-channel precision digital ammeters using the phase-sensitive demodulation technique were developed to measure the exit current from each electrode in the array. Different regions of the breast are scanned by moving the probe on the breast. We could get trans-admittance images of resistor and saline phantoms with an anomaly inside. The images provided the information on the depth and location of the anomaly. In future studies, we need to improve the accuracy through a better calibration method. We plan to test the scanner's ability to detect a cancer lesion inside the human breast.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.421-422
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• 2012

• Korean Journal of Optics and Photonics
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• v.7 no.4
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• pp.440-444
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• 1996

In this paper, we report an InGaAs/InAlAs multi-quantum well (MQW) avalanche photodiode (APD) showing a performance suitable for 10 Gbps lightwave communications. In designing the device, emphasis is given on the effect of indiffusion of Be dopant from the highly doped field layer into the MQW multiplication region. It is found that a small amount of diffusion can alter the dark current and gain characteristics of the device significantly. A spacer used to restrain such indiffusion is shown effective in reducing dark current (500 nA at a gain of 10) while maintaining a high bandwidth (10 GHz at a gain of 10) devices grown by molecular beam epitaxy.