• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.93-93
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• 2003

Photoluminescence(PL) properties of Silicon nanocrystals (nc-Si) as a function of temperature is reported to consider the mechanism of PL. Nc-Si has been made by $Si^+$ ion-implantation into thermal $SiO_2$ and subsequent annealing. And after gold had been diffused at the same samples above, the resultant PL spectra has been compared to the PL spectra from the non-gold doped nc-Si. PL peak energy variation from nc-Si is same with the variation of energy bandgap of bulk silicon as temperature changes from 6 K to room temperature. This result may mean nc-Si is still indirect transition material like bulk silicon. Gold doped nc-Si reveals short peak wavelength of PL spectrum than gold undoped one. PL peak shift through gold doing process shows clearly the PL mechanism is not from defect or interface states. PL intensity increases from 6K to a certain temperature and then decrease to room temperature. This characteristic with temperature shows that phonon have a role for the luminescence as theory explains that electron and hole can be recombined radiatively by phonon's assist in nc-Si, which is almost impossible in bulk silicon. Therefore luminescence is observed in nc-Si constructed less than a few of unit cell and the peak energy of luminescence can be higher than the bulk bandgap energy by the bandgap widening effect occurs in nanostructure.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.701-701
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• 2013

표면조직화는 입사되는 빛의 반사를 줄이고 태양전지 내부에서 빛의 이동거리를 길게하여 효율을 향상시키는 중요한 요소가 된다. 결정질 실리콘 표면 조직화에서 일반적으로 알카리 습식 식각이 많이 사용되며 이 식각 방법으로 반사도를 400~1000 nm의 파장에서 평균 11%까지 줄일 수 있다. 본 논문에서는 빛의 반사를 더 줄여 단락전류를 향상 시키기 위해 기존 NaOH를 이용한 표면 조직화를 수행한 후에 반응성 이온 식각 공정을 적용하는 2단계 표면 조직화 공정을 최적화 하였다. 먼저 NaOH 2%, IPA 7.5%용액에서 $80^{\circ}C$ 유지하면서 35분간 식각을 한 후에 ICP 장치에서 SF6/O2 비율 1:1, 공정 압력 25 mTorr, 시간 200 s로 고정하고 RF 파워를 25~200 W로 변화를 주면서 실험 하였다. 그 결과 마이크로 크기의 피라미드 위에 나노 크기의 피라미드를 형성할 수 있었으며 400~1,000 nm 파장에서 평균 4.96%까지 반사도를 낮출 수 있었다. 기존 알카리 식각 공정에 비해 반사도가 많이 낮아지게 되어 입사되는 빛의 양이 증가함으로서 단락전류가 증가하고 효율이 향상될 것으로 기대된다.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.29-33
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• 2000

The amorphous tungsten nitrides, WNx, film could be fabricated by reactive sputtering process. The nitrogen concentration for the amorphization ranges from 10 at% to 40at%. The amorphous $W_{67}N_{33}$ film was crystallized into low resistivity $\alpha$-tungsten phase with equiaxed grains and excess nitrogen after the rapid thermal annealing for 1min at 1273K, which was similar to the resistivity of the sputtered pure tungsten film. The excess nitrogen was depleted from $\alpha$-tungsten crystals and then segregated at $\alpha$-tungsten/poly-Si interface. The segregated nitrogen has favored the formation of the homogeneous diffusion barrier layer comprised of silicon nitride, $Si_3N_4$, nano-crystals, which undertaken the inhibition of the high resistivity tungsten silicide reaction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.58-61
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• 2012

In our report a relatively simple process for fast nano-texturing of p-type(100) CZ- silicon surface using silver catalyzed wet chemical etching in aqueous hydrofluoric acid (HF) and hydrogen peroxide solution($H_2O_2$) at room temperature. The wafers were saw-damaged by NaOH(6 wt%) at $60^{\circ}C$ for 150s. To obtain a nano-structured black surface, a thin layer of silver with thickness of 1 - 10 nm was deposited on the surfaces by evaporation system. After this process the samples were etched in HF : $H_2O_2$ : $H_2O$ = 1:5:10 at room temperature for 80s - 220s. Due to the local catalytic of the Ag clusters, this treatment results in the nano-scale texturing on the surface. This resulted in average reflectance values less than 9% after the silver on the surface of the wafers were removed.

• Korean Journal of Metals and Materials
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• v.48 no.7
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• pp.660-666
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• 2010

30 nm thick Ni layers were deposited on a glass substrate by e-beam evaporation. Subsequently, 30 nm or 60 nm ${\alpha}-Si:H$ layers were grown at low temperatures ($<220^{\circ}C$) on the 30 nm Ni/Glass substrate by catalytic CVD (chemical vapor deposition). The sheet resistance, phase, microstructure, depth profile and surface roughness of the $\alpha-Si:H$ layers were examined using a four-point probe, HRXRD (high resolution Xray diffraction), Raman Spectroscopy, FE-SEM (field emission-scanning electron microscopy), TEM (transmission electron microscope) and AES depth profiler. The Ni layers reacted with Si to form NiSi layers with a low sheet resistance of $10{\Omega}/{\Box}$. The crystallinty of the $\alpha-Si:H$ layers on NiSi was up to 60% according to Raman spectroscopy. These results show that both nano-scale NiSi layers and crystalline Si layers can be formed simultaneously on a Ni deposited glass substrate using the proposed low temperature catalytic CVD process.

• Korean Journal of Optics and Photonics
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• v.33 no.2
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• pp.74-83
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• 2022

The entire process, from the raw material to the final system qualification test, has been developed to fabricate a large-diameter, lightweight reflective-telescope system for a satellite observation. The telescope with 3 anastigmatic mirrors has an aperture of 700 mm and a total mass of 66 kg. We baked a silicon carbide substrate body from a carbon preform using a reaction sintering method, and tested the structural and chemical properties, surface conditions, and crystal structure of the body. We developed the polishing and coating methods considering the mechanical and chemical properties of the silicon carbide (SiC) body, and we utilized a chemical-vapor-deposition method to deposit a dense SiC thin film more than 170 ㎛ thick on the mirror's surface, to preserve a highly reflective surface with excellent optical performance. After we made the SiC mirrors, we measured the wave-front error for various optical fields by assembling and aligning three mirrors and support structures. We conducted major space-environment tests for the components and final assembly by temperature-cycling tests and vibration-shock tests, in accordance with the qualifications for the space and launch environment. We confirmed that the final telescope achieves all of the target performance criteria.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.212-212
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• 2016

2차원 탄소나노재료인 그래핀은 우수한 물성으로 인하여 광범위한 분야로 응용이 가능할 것으로 예상되어 많은 주목을 받아왔다. 이러한 그래핀의 응용가능성을 실현시키기 위해서는 보다 손쉽고 신뢰할 수 있는 합성방법의 개발이 필요한 실정이다. 그래핀의 합성 방법들로 흑연을 물리적 및 화학적으로 박리하거나, 특정 결정표면 위에 방향성 성장의 흑연화를 통한 합성, 그리고 열화학기상증착법(Thermal chemical vapor deposition; T-CVD) 등의 합성방법들이 제기되었다. 이중 T-CVD법은 대면적으로 두께의 균일성이 높은 그래핀을 합성하기 위한 가장 적합한 방법으로 알려져 있다. 그러나 일반적으로 T-CVD공정은 원료 가스인 탄화수소가스를 효율적으로 분해하기 위하여 $1000^{\circ}C$부근의 온공정이 요구되며, 이는 산업적인 응용의 측면에서 그래핀의 접근성을 제한한다. 따라서 대면적으로 고품질의 그래핀을 저온합성 할 수 있는 공정의 개발은 필수적이다. 본 연구에서는, 플라즈마를 이용하여 원료가스를 효율적으로 분해함으로써 그래핀의 저온합성을 도모하였다. 퀄츠 튜브로 구성된 수평형 합성장치는 플라즈마 방전영역과 T-CVD 영역으로 구분되며, 방전되는 유도결합 플라즈마는 원료가스를 효율적으로 분해하는 역할을 한다. 합성을 위한 기판과 원료가스로는 각각 전자빔 증착법을 통하여 300nm 두께의 니켈 박막이 증착된 실리콘 웨이퍼와 메탄가스를 이용하였다. 저온합성공정의 변수로는 인가전력과 합성시간으로 설정하였으며, 공정변수의 영향을 확인함으로써 그래핀의 저온합성 메커니즘을 고찰하였다. 연구결과, 인가전력이 증가되고 합성시간이 길어짐에 따라 원료가스의 분해효율과 공급되는 탄소원자의 반응시간이 보장되어 그래핀의 합성온도가 저하가능함을 확인하였으며, $400^{\circ}C$에서 다층 그래핀이 합성됨을 확인하였다. 또한 플라즈마 변수의 보다 정밀한 제어를 통해 합성온도의 저온화와 그래핀의 결정성 향상이 가능할 것으로 예상된다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.1
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• pp.14-20
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• 2018

Lead zinc niobate (PZN) added lead zirconate titanate (PZT) thick films with thickness of $5{\sim}10{\mu}m$ were fabricated on silicon and sapphire substrates using aerosol deposition method. The contents of PZN were varied from 0 %, 20 % and 40 %. The initial particles (PZT, 2PZN-8PZT, 4PZN-6PZT) had irregular shape and submicron sizes. The as-deposited film had fairly dense microstructure without any crack, and showed only a perovskite single phase formed with nano-sized grains. The as-deposited films on silicon were annealed at the temperatures of $700^{\circ}C$, and the films deposited on sapphire were annealed at $900^{\circ}C$ in the electrical furnace. The effects of PZN addition on the microstructural evolution were observed using by FE-SEM and HR-TEM.

• Journal of Adhesion and Interface
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• v.20 no.4
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• pp.155-161
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• 2019

Understanding charge transport anisotropy at the interface of conjugated nanostructures basically gives insight into structure-property relationship in organic field-effect transistors (OFET). Here, the anisotropy of the field-effect mobility at the interface between 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) single crystal with cofacial molecular stacks in a-b basal plane and SiO gate dielectric was investigated. A solvent exchange method has been used in order for TIPS-pentacene single crystals to be grown on the surface of SiO₂ thin film, corresponding to the charge accumulation at the interface in OFET structure. In TIPS-pentacene OFET, the anisotropy ratio between the highest and lowest measured mobility is revealed to be 5.2. By analyzing the interaction of a conjugated unit in TIPS-pentacene with the nearest neighbor units, the mobility anisotropy can be rationalized by differences in HOMO-level coupling and hopping routes of charge carriers. The theoretical estimation of anisotropy based on HOMO-level coupling is also consistent with the experimental result.

• Advanced Industrial SCIence
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• v.2 no.2
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• pp.9-15
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• 2023

Since silicone rubber heaters are flexible, they can be directly attached or installed in objects to be heated even in flat, curved or three-dimensional shapes. Since the current heating method heats the entire object to be heated and raises it to a required temperature, ignoring areas or positions where heat is not required, partial intensive heating cannot be performed. When using multi-heating zones, rather than heating the entire object to be heated, only the parts that need heat are intensively heated according to the process, so it is possible to heat quickly by local location by applying different amounts of heat with a small amount of electric capacity to each place that needs heat, and heat energy can reduce. In this study, the temperature and heating time of the partially concentrated region in the multi-heating region structure are measured so that a uniform temperature or temperature difference occurs in the region requiring thermal fusion. In order to determine the optimal power density range and reduce capacitance, the safety of a silicon rubber heater manufactured with a multi-heating zone structure is investigated. If the silicon rubber heater is manufactured in a multi-heating method, the multi-intensive heating technology can be ideally applied to all heating processes.