• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1538-1540
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• 2003

The composites were fabricated respectively 61vol.% ${\beta}$-SiC and 39vol.% $TiB_2$ spray-dried powders with the liquid forming additives of 12wt% $Al_2O_3+Y_2O_3$ by pressureless annealing at $1700^{\circ}C,\;1750^{\circ}C\;1800^{\circ}C$ for 4 hours. The result of phase analysis of composites by XRD revealed ${\alpha}$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density, the Young's modulus and fracture toughness showed respectively the highest value of 92.97%, 92.88Gpa and $4.4Mpa{\cdot}m^{1/2}$ for composites by pressureless annealing temperature $1700^{\circ}C$ at room temperature. The electrical resistivity showed the lowest value of $8.09{\times}10^{-3}{\Omega}{\cdot}cm$ for composite by pressureless annealing tempe rature $1700^{\circ}C$ at $25^{\circ}C$. The electrical resistivity of the SiC-$TiB_2$ composites was all positive temperature cofficient resistance (PTCR) in the temperature ranges from $25^{\circ}C$ to $700^{\circ}C$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.12
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• pp.1724-1729
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• 2015

Chlorosulfonated polyethylene (CSPE) was not flooded seawater and flooded seawater & freshwater for 5 days, respectively, and these samples are referred to as BSF(before seawater flooding) and ASFF(after seawater & freshwater flooding), respectively. The apparent density, dissipation factor, relative permittivity, melting temperature, dielectric breakdown time and increased time of applied voltage are higher than those of BSF, but the insulating resistance, dielectric strength, percent elongation and glass transition temperature of ASFF are lower than those of BSF. The differential temperature of those is $0.026{\sim}0.028(^{\circ}C)$ after AC and DC voltage is applied to ASFF, respectively, and the differential temperature of those is $0.013{\sim}0.037(^{\circ}C)$ after AC and DC voltage is applied to BSF, respectively. In the case AC and DC voltage is applied to ASFF as well as BSF, the variations in temperature of AC voltage are higher than those of DC voltage. It is investigated that dielectric loss due to dissipation factor ($tan{\delta}$) is related to electric dipole conduction current. It is certain that the ionic (electron or hole) leakage current was increased by conducting ions such as $Na^+$, $Cl^-$, $Mg^{2+}$, $SO_4^{2-}$, $Ca^{2+}$ and $K^+$, those are related to cured atoms of O and S that relatively increased after seawater flooding.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.124-125
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• 2007

The composites were fabricated $\beta$-SiC and $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at $1,650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[MPa], 54.60 [GPa] and 2.84[GPa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. The electrical resistivity showed the lowest value of 0.012[${\Omega}{\cdot}cm$] for 16[wt%] at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.7
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• pp.988-991
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• 2012

The computer simulation was performed to confirm distribution of current and power density according to inner diameter of graphite mold of SPS(Spark Plasma Sintering). When the inner diameters of a graphite mold are varied $10mm{\Phi}$, $20mm{\Phi}$, $30mm{\Phi}$ and $40mm{\Phi}$, the more the inner diameter of graphite mold is decreased, the more the current density of punch section is increased. Because the electrical resistivity of the SiC-$ZrB_2$ specimen section($7.77{\times}10^{-4}{\Omega}{\cdot}cm$) was lower than the electrical resistivity($6.00{\times}10^{-3}{\Omega}{\cdot}cm$) of graphite section, the current density and power density of specimen section was higher than those of graphite section. It is considered that a SiC-$ZrB_2$ composite is sintered by more Joule heat of specimen section than that of mold and punch section. The current and power density distribution of a SiC-$ZrB_2$ composite can be predicted through computer simulation when SPS is conducted, and an electrical resistivity of the SiC-$ZrB_2$ composite is main element of SPS.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1303-1304
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• 2007

The composites were fabricated, respectively, using 61[vol.%]SiC-39[vol.%]$TiB_2$ and using 61[vol.%]SiC-39[vol.%]$ZrB_2$ powders with the liquid forming additives of 12[wt%] $Al_{2}O_{3}+Y_{2}O_{3}$ by hot pressing annealing at $1650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. ${\beta}{\rightarrow}{\alpha}$-SiC phase transformation was occurred on the SiC-$TiB_2$ and SiC-$ZrB_2$ composite. The relative density, the flexural strength and Young's modulus showed the highest value of 98.57[%], 226.06[Mpa] and 86.38[Gpa] in SiC-$ZrB_2$ composite at room temperature respectively. The electrical resistivity showed the lowest value of $7.96{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SiC-$ZrB_2$ composite at $25[^{\circ}C]$. The electrical resistivity of the SiC-$TiB_2$ and SiC-$ZrB_2$ composite was all positive temperature coefficient resistance (PTCR) in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$. The resistance temperature coefficient of composite showed the value of $6.88{\times}10^{-3}/[^{\circ}C]$ and $3.57{\times}10^{-3}/[^{\circ}C]$ for SiC-$ZrB_2$ and SiC-$TiB_2$ composite in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.839-842
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta$-SiC-ZrB$_2$ electroconductive ceramic composites were investigated as function of the liquid forming additives of $Al_2$O$_3$+Y$_2$O$_3$. Phase analysis of composites by XRD revelled $\alpha$ -SiC(6H), ZrB$_2$, and YAG(Al$_{5}$ Y$_3$O$_{12}$ ). Owing to crack deflection, crack bridging, phase transition and YAG of fracture toughness mechanism, the fracture toughness showed the highest value of 6.3MPa.m$^{1}$2/ for composites added with 24wt% $Al_2$O$_3$+Y$_2$O$_3$additives at room temperature. The resistance temperature coefficient respectively showed the value of 2.46$\times$10$^{-3}$ , 2.47$\times$10$^{-3}$ , 2.52$\times$ 10$^{-3}$ $^{\circ}C$ for composite added with 16, 20, 24wt% A1$_2$O$_3$+Y$_2$O$_3$additives. The electircal resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C$ to 90$0^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.6
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• pp.490-495
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• 2019

This study performs the thermal aging of chlorosulfonated polyethylene (CSPE) for 807.36 and 1,614.48 hours at $110^{\circ}C$, which is equivalent to 40 and 80 years of aging at $50^{\circ}C$ in nuclear power plants, respectively. Flat-type CSPEs were soaked in seawater for five days and then dried for five days at room temperature. Furthermore, the soaked CSPEs were cleaned for 5 days with fresh water and dried for 1,100 days at room temperature. Through this process, the log IV of the CSPEs decreases, whereas the dissipation factor of the CSPEs increases as thermally accelerated aged years increase at the measured frequency. Although the phase degree of the response voltage versus excitation voltage of the CSPEs increases, that of the response current versus excitation voltage decreases with the thermally accelerated aging. The thermal conductivity of the CSPEs increases slightly, but the thermal diffusivity does not vary with the thermally accelerated aged year increase. The displacement of the compressive strength of the CSPEs decreases gradually as the thermally accelerated aged years increase.

• Electrical & Electronic Materials
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• v.4 no.3
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• pp.211-219
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• 1991

본 논문은 고주파에서의 Ni-Zn페라이트의 첨가물에 따른 소결특성에 관하여 연구한 것이다. 연구에서 사용한 시편은 20mol% NiO, 30mol% ZnO 및 50mol% Fe$_{2}$ $O_{3}$이 조성으로된 페라이트를 모재로 하고 첨가물로서 각각 0.0025mol%, 0.005mol% 및 0.001mol%의 비율로 Nb$_{2}$ $O_{5}$, Bi$_{2}$ $O_{3}$ 및 V$_{2}$ $O_{5}$를 첨가하였다. 그리고 소결을 1100.deg.C에서 이루어졌다. 초투자율은 V$_{2}$ $O_{2}$가 첨가된 시편의 100KHz-1000KHz주파수대에서 4*$10^{2}$~8*$10^{2}$의 높은 값을 얻었다. 손실계수는 100KHz~500KHz주파수대에서 1*10~3*$10^{-2}$이었다. 1/(.mu.*Q)값은 0.005mo;% Bi$_{2}$ $O_{3}$가 첨가된 시편에서 가장 높은 값을 나타내었다. 자기저항은 초유자율과 반비례의 관계를 나타내었다. 실험의 결과 첨가물에 의한 소결특성은 액상형성에 의하여 고른 입자성장을 확인할 수 있었다. 따라서 0.01mol% V$_{2}$ $O_{5}$를 첨가한 시편이 가장 우수한 자기특성을 나타내고 있음을 확인하였다.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.26 no.6
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• pp.1605-1618
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• 2016

In recent years, security incidents - such as personal information leakage, homepage hacking, DDoS and etc. - targeting finance companies(banks, securities companies, credit card companies, insurance companies and etc.) have increased steadily. In this paper, we analyze problems of information security management level in the existing electronic financial infrastructure from perspective of compliance and information security certification system and propose improvements to enable sustainable high level of information security activities under a comprehensive management system for the financial sector characteristics using ISMS, SECU-STAR and CNIVAM system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.637-645
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• 1998

The characteristics of waveguide, electrode and packaging fabricated for acousto-optic tunable filters(AOTF) used for optical communications were analyzed. A $Ti:LiNbO_3$in-diffusing method was employed for the formation of the optical waveguide with a dimension of width $8{\mu}m$, length $30000-50000{\mu}m$ and varying the thickness. The diffusion was carried at $1050^{\circ}C$ for 8 hours to pattern the optical waveguide. The resulted waveguide exhibited a single mode at 1550nm optical wavelength. The width of IDT, with 10 SAM periods, was $5000{\mu}m$ . Impedances of the electrodes deposited with Au were analyzed using a network analyzer; $48.1\Omega$ at the center frequency of 193MHz for electrode thickness of $1500{\AA}$ and $50.7\Omega$ at the center frequency of 192MHz for $1600\AA$. And the characteristics of packaged AOTF was analyzed. When the electrical frequency 177.1MHz was applied to the device, the mode conversion efficiency was measured as 63% at the optical wavelength 1515nm.