• Applied Chemistry for Engineering
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• v.8 no.3
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• pp.395-402
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• 1997

The $SiO_2$ films were prepared by ECR(electron cyclotron resonance) plasma diffusion method, Deal-Grove model and Wolters-Zegers-van Duynhoven model were used to estimate the oxidation rate which was correlated with surface morphology for different orientation of Si(100) and Si(111). It was seen the $SiO_2$ thickness increased linearly with initial oxidation time. But oxidation rate slightly decrease with oxidation time. It was also shown that the oxidation process was controlled by the diffusion of the reactive species through the oxide layer rather than by the reaction rate at the oxide interface. The similar time dependency has been observed for thermal and plasma oxidation of silicon. From D-G model and W-Z model, the oxidation rate of Si(111) was 1.13 times greater than Si(100) because Si(111) had higher diffusion and reaction rate, these models more closely fits the experimental data. The $SiO_2$ surface roughness was found to be uniform at experimental conditions without etching although oxidation rate was increased, and to be nonuniform due to etching at experimental condition with higher microwave power and closer substrate distance.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.216-220
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• 2000

Photoluminescence (PL) results of $Si^+$-implanted $SiO_2$films on crystalline silicon are reported. Visible and infrared PL are observed for all the samples. The PL spectrums have about 7000 $\AA$, 7400 $\AA$ and 8400 $\AA$ peak positions. As amount of $Si^+$ ion dose changed, the PL peak positions and intensity are changed. In particular, the PL spectrum has three peaks and more intensity than the other $Si^+$ ion implantation samples for $1{\times}10^{17}/cm^2$ $Si^+$ ion implantation. Not nanocrystal but defects that $Si^+$ ions treated are contributed to the PL spectrum. For the changes of $Si^+$ ion dose and annealing time, O rich radiative defects, Si rich radiative defects, and nonradiative defects control the PL spectrum. We confirmed that more radiative defects can be created by control of $Si^+$ ion dose.

• Journal of the Korean Chemical Society
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• v.40 no.10
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• pp.656-662
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• 1996

Using low temperature and atmospheric pressure method, we synthesized Na, TPA-ZSM-5 with Si/Al ratio of about 100. We employed 27Al and 29Si MAS NMR spectroscopy and FT-IR to investigate the crystallization process as a function of time. The chemical shift depends on the initial composition of reactants and changes during the course of synthesis different from those reported by others earlier. However, the chemical shift of our final product showed in the range of typical ZSM-5. And the defect site was removed by the calcine. From XRD and SEM data, the formation of ZSM-5 was also confirmed.

• Proceedings of the KAIS Fall Conference
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• 2004.06a
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• pp.62-64
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• 2004

초고속 RF IC의 핵심소자인 SiGe에피텍시층을 가진 이종양극트란지스터 (hetero junction bipolar transistor: HBT)를 0.35um급 CMOS공정으로 제작하였다. 이때 IOW $V_{BE}$영역에서의 Current Gain의 선형성을 향상시키기 위하여 Capping 실리콘의 두께를 200과 300${\AA}$으로 나누고 EDR (Emitter Drive-in RTA)의 온도와 시간을 900$\~$1000C, 0$\~$30sec로 각각 변화시키면서 최적조건을 알아보았다. 실험범위 내에서의 최적공정조건은 300${\AA}$의 capping 실리콘과 975C-30sec의 EDR조건이었다.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.32 no.2
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• pp.103-108
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• 2019

Non-equilibrium molecular dynamics simulation on the thermal boundary resistance(TBR) of an aluminum(Al)/silicon(Si) interface was performed in the present study. The constant heat flux across the Si/Al interface was simulated by adding the kinetic energy in hot Si region and removing the same amount of the energy from the cold Al region. The TBR estimated from the sharp temperature drop at the interface was independent of heat flux and equal to $5.13{\pm}0.17K{\cdot}m^2/GW$ at 300K. The simulation result was experimentally confirmed by the time-domain thermoreflectance technique. A 90nm thick Al film was deposited on a Si(100) wafer using an e-beam evaporator and the TBR on the film/substrate interface was measured using the time-domain thermoreflectance technique based on a femtosecond laser system. A numerical solution of the transient heat conduction equation was obtained using the finite difference method to estimate the TBR value. Experimental results were compared to the prediction and discussions on the nanoscale thermal transport phenomena were made.

• Journal of the Korean GEO-environmental Society
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• v.25 no.5
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• pp.29-37
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• 2024

This study aimed to investigate the changes in chemical components that occur when weak clay is mixed with steel slag modified with calcium oxide, and to understand the expression characteristics of compressive strength according to hydrophilicity and curing time. XRF testing, SEM imaging, vane shear strength and uniaxial compressive strength testing were conducted. Calcium (Ca) released from the steel slag increases the Ca content in clay by increasing the number of crystal particles and forming a coating layer known as calcium silicate hydrate (CaO-SiO₂-H₂O) through chemical reactions with SiO₂ and Al₂O₃ components. The weak clay stabilized with steel slag is classified into an initial inactive zone where strength relatively does not increase and an activation zone where strength increases over curing time. The vane shear strength of the initial inactive area was found to be 4.4 to 18.4 kN/m² in the state of the weight mixing ratio Rss 30% (steel slag 30% + clay 70%). In the case of the active area, the maximum uniaxial compressive strength increased to 431.8 kN/m² after 480 hours of curing time, which increased due to the apparent adhesion strength of clay through pozzolanic reaction. Therefore, considering the strength expression characteristics of stabilized mixed clay based on the mixing ratio (Rss) during the recycling of steel slag can enhance its practicality in civil engineering sites.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.59.2-59.2
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• 2010

결정형 태양 전지의 보급화를 위하여 고순도 실리콘을 저렴하게 제조할 수 있는 기술 개발이 필요하다. 본 연구에서는 고순도 실리콘을 경제적으로 제조하기 위하여 대역 정제에 의한 일방향성 응고법을 이용한 정련 연구를 진행하였으며, 응고 속도와 고 액상의 온도 구배가 정련도에 미치는 영향을 분석 하였다. 본 실험에 사용된 일방향 응고장치는 실리콘 용탕이 장입된 도가니 하부의 열 교환기를 통한 냉각에 의해 용탕 하부에서 상부 방향으로의 일방향성 응고가 진행되며, 응고 진행시 용탕의 흔들림에 의한 정련능의 감소를 방지하기 위해 가열 영역이 이동하는 Stober 공정을 채택하였다. 가열 영역은 실리콘 용융을 위한 상부 가열 영역과 응고 진행시 응고부의 온도 제어를 위한 하부 가열 영역으로 구성되어 있으며, 두 가열 영역의 온도 제어를 통해 응고중인 실리콘의 고 액상의 온도 구배를 조절하였다. 일방향 응고에 의한 정련법에서 고 액상의 온도 구배가 증가할수록 2차 수지상의 발달이 감소하고, 주상정의 수지상 형태를 유지하게 되어 고 액 공존영역에서 액상 영역으로의 확산이 원활하게 이루어져 분배계수를 이용한 정련도가 좋아지게 되며, ICP 분석을 통해 온도 구배의 증가에 따라 정련능이 증가하는 양상을 확인 할 수 있었다. 고 액상의 온도 구배의 조절을 통한 공정 시간 대비 정련도의 향상을 통해 결정형 태양전지의 생산성의 증가를 통한 저가화를 이룰 수 있을 것이다.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.381-386
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• 2011

We fabricated the ZnO (zinc oxide)/$SiO_2$ (silicon dioxide) branch hierarchical nanostructures by the e-beam evaporation of $SiO_2$ onto the surface of the electrochemically grown ZnO nanorods on Si substrate, which leads to the self-assembled $SiO_2$ nanorods by oblique angle deposition between vapor flux and vertically aligned ZnO nanorods. In order to investigate the effects of $SiO_2$ deposition on the morphology and optical property of ZnO/$SiO_2$ branch hierarchical nanostructures, the evaporation time of $SiO_2$ was varied under a fixed deposition rate of 0.5 nm/s. The vertically aligned ZnO nanorods on Si substrate exhibited a low reflectance of <10% in the wavelength range of 300~535 nm. For ZnO/$SiO_2$ branch hierarchical nanostructures at 100 s of evaporation time of $SiO_2$, the more improved antireflective property was achieved. From these results, ZnO/$SiO_2$ branch hierarchical nanostructures are very promising for optoelectronic and photovoltaic device applications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.2
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• pp.79-83
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• 2009

The glass-ceramic of the $Li_{2}O-Al_{2}O_{3}-SiO_{2}$ system was investigated to develop the low thermal expansion materials. The glass of this system was heat treated at $775^{\circ}C$ for 2 h for nucleation and subsequently at $825{\sim}900^{\circ}C$ for 2 h for crystallization. The crystal structure of the glass-ceramic of this system was a single phase of $\beta$-quartz solid solution($Li_{x}Al_{x}Si_{1-x}O_{2}$). The thermal expansion of the glass-ceramic showed $4.40{\times}10^{-7}{\sim}1.33{\times}10^{-6}K^{-1}$ between $25{\sim}300^{\circ}C$ and $1.56{\times}10^{-6}{\sim}2.53{\times}10^{-6}K^{-1}$ between $25{\sim}800^{\circ}C$, higher than lower temperature range. The mechanical strength remained almost same at around high 110 MPa with heating temperature changes.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.98.1-98.1
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• 2017

본 연구에서는 정전류 조건에서 알루미늄 합금의 PEO(Plasma Electrolytic Oxidation) 피막 형성 거동에 대한 전해질 조성의 영향을 아크 발생 양상, 전압-시간 곡선 및 형성된 표면피막의 구조를 관찰하여 연구하였다. 실험에 사용된 전해질은 NaOH 수용액에 $Na_2SiO_3$을 혼합하여 구성되었으며, NaOH와 $Na_2SiO_3$의 농도는 각각 0.01 ~ 1.0 M 와 0 ~ 2.0 M 사이로 조절되었다. 0.01 M NaOH 이하의 용액에서는 양극전압이 500 V 이상으로 상승되고 미세한 아크가 시편 표면 전체에 발생했으나, 0.02 M NaOH 이상의 농도에서는 양극전압이 300 V 이하로 감소되었고 아크발생이 관찰되지 않았다. 아크발생이 일어나지 않는 고농도의 0.5 M NaOH 용액의 경우 0.1 M 이상의 $Na_2SiO_3$를 첨가하였을 때 작은 아크의 무리가 발생되었다. 0.5 M NaOH 수용액에 0.1 M ~ 0.2 M $Na_2SiO_3$가 첨가되었을 땐 아크 무리가 발생하나 이내 일부 영역에서만 반복적으로 아크가 발생하는 로컬 버닝 현상이 일어났다. 한편 0.5 M NaOH 수용액에 0.5 M 이상의 $Na_2SiO_3$가 첨가되었을 때는 로컬 버닝이 일어나지 않고 전 표면에 걸쳐서 아크 무리가 이동하며 PEO 피막이 형성되었다. 0.01 M NaOH 수용액에서 형성된 PEO 피막의 두께는 처리 시간에 따라 증가하지 않고 $10{\mu}m$ 이하의 낮은 값을 보였다. 반면에 NaOH와 $Na_2SiO_3$ 혼합수용액에서 형성된 피막의 두께는 약 $30{\mu}m$ 이상의 높은 값을 보였다.